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Vishay Siliconix |
MOSFET N-CH 8V 35A PPAK 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 4V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 4.5V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock86,580 |
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MOSFET (Metal Oxide) | 8V | 35A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 105nC @ 8V | 3810pF @ 4V | ±8V | - | 3.8W (Ta), 52W (Tc) | 3.5 mOhm @ 15A, 4.5V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 6.2A 8-TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.08W (Ta)
- Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock3,456 |
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MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 70nC @ 5V | - | ±8V | - | 1.08W (Ta) | 12.5 mOhm @ 9.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 6.2A 8-TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.08W (Ta)
- Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock5,312 |
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MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 70nC @ 5V | - | ±8V | - | 1.08W (Ta) | 12.5 mOhm @ 9.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET P-CH 8V 8TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock72,600 |
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MOSFET (Metal Oxide) | 8V | - | 1.8V, 4.5V | 450mV @ 250µA (Min) | 40nC @ 4.5V | - | ±8V | - | 1.5W (Ta) | 28 mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 6.8A 8TSSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.05W (Ta)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 8.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock13,980 |
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MOSFET (Metal Oxide) | 20V | 6.8A (Ta) | 2.5V, 4.5V | 450mV @ 250µA (Min) | 27nC @ 5V | - | ±8V | - | 1.05W (Ta) | 14 mOhm @ 8.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 6.8A 8TSSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.05W (Ta)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 8.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock6,656 |
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MOSFET (Metal Oxide) | 20V | 6.8A (Ta) | 2.5V, 4.5V | 450mV @ 250µA (Min) | 27nC @ 5V | - | ±8V | - | 1.05W (Ta) | 14 mOhm @ 8.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET P-CH 8V 8.8A 8TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock5,744 |
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MOSFET (Metal Oxide) | 8V | 8.8A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 80nC @ 4.5V | - | ±8V | - | 1.5W (Ta) | 12 mOhm @ 8.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET P-CH 8V 8.8A 8TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock278,820 |
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MOSFET (Metal Oxide) | 8V | 8.8A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 80nC @ 4.5V | - | ±8V | - | 1.5W (Ta) | 12 mOhm @ 8.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 7.3A 8-TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.05W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock36,000 |
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MOSFET (Metal Oxide) | 30V | 7.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 60nC @ 5V | - | ±20V | - | 1.05W (Ta) | 12 mOhm @ 8.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 7.2A 8TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.05W (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock24,540 |
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MOSFET (Metal Oxide) | 20V | 7.2A (Ta) | 1.8V, 4.5V | 800mV @ 400µA | 105nC @ 5V | - | ±8V | - | 1.05W (Ta) | 10 mOhm @ 8.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 8.6A 8TSSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.08W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock7,872 |
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MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 2.5V, 10V | 600mV @ 250µA | 48nC @ 4.5V | - | ±12V | - | 1.08W (Ta) | 9 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 8.6A 8TSSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.08W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock4,592 |
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MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 2.5V, 10V | 600mV @ 250µA | 48nC @ 4.5V | - | ±12V | - | 1.08W (Ta) | 9 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 6A PPAK CHIPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Dual
- Package / Case: PowerPAK? ChipFET? Dual
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Package: PowerPAK? ChipFET? Dual |
Stock2,240 |
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MOSFET (Metal Oxide) | 20V | 6A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 16nC @ 8V | 520pF @ 10V | ±8V | Schottky Diode (Isolated) | 2.3W (Ta), 8.3W (Tc) | 39 mOhm @ 4.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Dual | PowerPAK? ChipFET? Dual |
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Vishay Siliconix |
MOSFET P-CH 20V 6A PPAK CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2.3W (Ta), 10.4W (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Dual
- Package / Case: PowerPAK? ChipFET? Dual
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Package: PowerPAK? ChipFET? Dual |
Stock5,168 |
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MOSFET (Metal Oxide) | 20V | 6A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 17nC @ 10V | 480pF @ 10V | ±12V | Schottky Diode (Isolated) | 2.3W (Ta), 10.4W (Tc) | 58 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Dual | PowerPAK? ChipFET? Dual |
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Vishay Siliconix |
MOSFET P-CH 20V 4A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc)
- Rds On (Max) @ Id, Vgs: 104 mOhm @ 2.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock896,268 |
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MOSFET (Metal Oxide) | 20V | 4A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 11nC @ 8V | 350pF @ 10V | ±8V | Schottky Diode (Isolated) | 1.5W (Ta), 3.1W (Tc) | 104 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 20V 12A PPAK CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Single
- Package / Case: PowerPAK? ChipFET? Single
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Package: PowerPAK? ChipFET? Single |
Stock7,136 |
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MOSFET (Metal Oxide) | 20V | 12A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 42nC @ 8V | 1100pF @ 10V | ±12V | - | 3.1W (Ta), 31W (Tc) | 25 mOhm @ 5.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Single | PowerPAK? ChipFET? Single |
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Vishay Siliconix |
MOSFET N-CH 20V 12A PPAK CHIPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Single
- Package / Case: PowerPAK? ChipFET? Single
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Package: PowerPAK? ChipFET? Single |
Stock30,000 |
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MOSFET (Metal Oxide) | 20V | 12A (Tc) | 2.5V, 4.5V | 2V @ 250µA | 55nC @ 10V | 1600pF @ 10V | ±12V | - | 3.1W (Ta), 31W (Tc) | 16 mOhm @ 7.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Single | PowerPAK? ChipFET? Single |
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Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK CHIPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Single
- Package / Case: PowerPAK? ChipFET? Single
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Package: PowerPAK? ChipFET? Single |
Stock4,064 |
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MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 2V @ 250µA | 51nC @ 10V | 1610pF @ 15V | ±12V | - | 3.1W (Ta), 31W (Tc) | 15 mOhm @ 7.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Single | PowerPAK? ChipFET? Single |
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Vishay Siliconix |
MOSFET P-CH 20V 12A PPAK CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Single
- Package / Case: PowerPAK? ChipFET? Single
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Package: PowerPAK? ChipFET? Single |
Stock6,992 |
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MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 50nC @ 8V | 1610pF @ 10V | ±8V | - | 3.1W (Ta), 17.8W (Tc) | 22 mOhm @ 6.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Single | PowerPAK? ChipFET? Single |
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Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK CHIPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Single
- Package / Case: PowerPAK? ChipFET? Single
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Package: PowerPAK? ChipFET? Single |
Stock18,768 |
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MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 3V @ 250µA | 34nC @ 10V | 1230pF @ 15V | ±20V | - | 3.1W (Ta), 31W (Tc) | 16 mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Single | PowerPAK? ChipFET? Single |
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Vishay Siliconix |
MOSFET P-CH 12V 16A CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc)
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Single
- Package / Case: PowerPAK? ChipFET? Single
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Package: PowerPAK? ChipFET? Single |
Stock3,760 |
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MOSFET (Metal Oxide) | 12V | 16A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 51nC @ 8V | 1810pF @ 6V | ±8V | - | 3.1W (Ta), 17.8W (Tc) | 21 mOhm @ 6.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Single | PowerPAK? ChipFET? Single |
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Vishay Siliconix |
MOSFET P-CH 12V 5.5A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 5.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock7,968 |
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MOSFET (Metal Oxide) | 12V | 5.5A (Ta) | 1.8V, 4.5V | 450mV @ 1mA (Min) | 29nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 31 mOhm @ 5.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 12V 5.5A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 5.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock1,336,008 |
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MOSFET (Metal Oxide) | 12V | 5.5A (Ta) | 1.8V, 4.5V | 450mV @ 1mA (Min) | 29nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 31 mOhm @ 5.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 12V 6A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock5,248 |
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MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 40nC @ 8V | 1400pF @ 6V | ±8V | - | 2.5W (Ta), 6.3W (Tc) | 28 mOhm @ 5.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 12V 6A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock33,180 |
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MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 40nC @ 8V | 1400pF @ 6V | ±8V | - | 2.5W (Ta), 6.3W (Tc) | 28 mOhm @ 5.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 12V 5.9A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock36,000 |
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MOSFET (Metal Oxide) | 12V | 5.9A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 32nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 27 mOhm @ 5.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 20V 3.8A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock5,168 |
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MOSFET (Metal Oxide) | 20V | 3.8A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 15nC @ 4.5V | - | ±12V | - | 1.25W (Ta) | 62 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 20V 4.5A CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock55,416 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 20nC @ 4.5V | - | ±12V | - | 1.3W (Ta) | 45 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |