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Vishay Siliconix |
MOSFET P-CH 30V 12A PPAK CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PowerPak? ChipFet (3x1.9)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock17,148 |
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MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 45nC @ 10V | 1400pF @ 15V | ±20V | - | 3.1W (Ta), 31W (Tc) | 20 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerPak? ChipFet (3x1.9) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 8V 12A SC-70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock703,812 |
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MOSFET (Metal Oxide) | 8V | 12A (Tc) | 1.2V, 4.5V | 800mV @ 250µA | 50nC @ 5V | 2300pF @ 4V | ±5V | - | 3.5W (Ta), 19W (Tc) | 16 mOhm @ 8.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock205,932 |
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MOSFET (Metal Oxide) | 60V | 2.3A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 5.3nC @ 10V | 205pF @ 30V | ±20V | - | 2W (Tc) | 150 mOhm @ 2.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 2.7A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock36,000 |
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MOSFET (Metal Oxide) | 20V | 2.7A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 8.5nC @ 4.5V | 470pF @ 10V | ±12V | - | 1.5W (Ta), 2.78W (Tc) | 80 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 30V 6A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,104,012 |
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MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13nC @ 10V | 424pF @ 15V | ±20V | - | 1.3W (Ta), 2.5W (Tc) | 28 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 3A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,262,316 |
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MOSFET (Metal Oxide) | 40V | 3A (Ta) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | 540pF @ 20V | ±20V | - | 750mW (Ta) | 45 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 12A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock18,264 |
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MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45nC @ 10V | 1550pF @ 15V | ±20V | - | 3.5W (Ta), 19W (Tc) | 21 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 20V MICROFOOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
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Package: 4-XFBGA, CSPBGA |
Stock2,020,728 |
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MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 1V @ 250µA | 8.3nC @ 8V | - | ±8V | - | 500mW (Ta) | 80 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
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Vishay Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock844,944 |
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MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | 380pF @ 15V | ±20V | - | 750mW (Ta) | 78 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
- Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock927,108 |
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MOSFET (Metal Oxide) | 60V | 2.3A (Tc) | 4.5V, 10V | 3V @ 250µA | 6.8nC @ 10V | 190pF @ 30V | ±20V | - | 1.09W (Ta), 1.66W (Tc) | 156 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 6A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock5,172,012 |
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MOSFET (Metal Oxide) | 20V | 6A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 45nC @ 8V | 1300pF @ 10V | ±8V | - | 1.6W (Ta), 3.3W (Tc) | 38 mOhm @ 5.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
- Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock936,156 |
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MOSFET (Metal Oxide) | 60V | 2.3A (Tc) | 4.5V, 10V | 3V @ 250µA | 6.8nC @ 10V | 190pF @ 30V | ±20V | - | 1.09W (Ta), 1.66W (Tc) | 156 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 6A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
- Rds On (Max) @ Id, Vgs: 31.8 mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,264,160 |
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MOSFET (Metal Oxide) | 20V | 6A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 18nC @ 5V | 865pF @ 10V | ±8V | - | 1.25W (Ta), 2.1W (Tc) | 31.8 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 4.4A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
- Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock980,064 |
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MOSFET (Metal Oxide) | 20V | 4.4A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 21nC @ 8V | - | ±8V | - | 1.25W (Ta), 1.8W (Tc) | 61 mOhm @ 3.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,403,964 |
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MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 1.8V, 4.5V | 850mV @ 250µA | 12nC @ 4.5V | - | ±8V | - | 750mW (Ta) | 31 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,757,004 |
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MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 1.8V, 4.5V | 850mV @ 250µA | 12nC @ 4.5V | - | ±8V | - | 750mW (Ta) | 31 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 7.6A TO-236
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock745,560 |
|
MOSFET (Metal Oxide) | 30V | 7.6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 36nC @ 10V | 1295pF @ 15V | ±20V | - | 1.25W (Ta), 2.5W (Tc) | 29 mOhm @ 5.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 12A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock211,080 |
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MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 45nC @ 8V | 1300pF @ 10V | ±8V | - | 3.4W (Ta), 17.9W (Tc) | 33 mOhm @ 5.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 30V 3.6A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,723,188 |
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MOSFET (Metal Oxide) | 30V | 3.6A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 10nC @ 10V | 320pF @ 15V | ±12V | - | 1.1W (Ta), 1.7W (Tc) | 68 mOhm @ 2.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 12V 3A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.85A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock660,156 |
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MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 15nC @ 4.5V | 715pF @ 6V | ±8V | - | 750mW (Ta) | 50 mOhm @ 3.85A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 350MA SC89-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
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Package: SC-89, SOT-490 |
Stock1,145,472 |
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MOSFET (Metal Oxide) | 20V | 350mA (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 1.5nC @ 4.5V | - | ±6V | - | 250mW (Ta) | 1.2 Ohm @ 350mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Vishay Siliconix |
MOSFET N-CH 40V 5.6A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock936,408 |
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MOSFET (Metal Oxide) | 40V | 5.6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9nC @ 10V | 340pF @ 20V | ±20V | - | 1.25W (Ta), 2.1W (Tc) | 42 mOhm @ 4.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 1.4A SC70
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.4A, 4.5V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock549,096 |
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MOSFET (Metal Oxide) | 20V | 1.4A (Tc) | 1.8V, 4.5V | 800mV @ 250µA | 6.5nC @ 4.5V | 272pF @ 10V | ±8V | - | 400mW (Ta), 500mW (Tc) | 150 mOhm @ 1.4A, 4.5V | -50°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET N-CH 20V 500MA SC-75A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75A
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Package: SC-75A |
Stock4,487,496 |
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MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 0.75nC @ 4.5V | - | ±6V | - | 150mW (Ta) | 700 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75A | SC-75A |
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Vishay Siliconix |
MOSFET N-CH 20V 140MA SC-75A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75A
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Package: SC-75A |
Stock1,641,024 |
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MOSFET (Metal Oxide) | 20V | 140mA (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | 0.75nC @ 4.5V | - | ±6V | - | 250mW (Ta) | 5 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75A | SC-75A |
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Vishay Siliconix |
MOSFET N-CH 30V 2.6A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,415,160 |
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MOSFET (Metal Oxide) | 30V | 2.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 4nC @ 5V | 225pF @ 15V | ±20V | - | 750mW (Ta) | 70 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 185MA SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,142,724 |
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MOSFET (Metal Oxide) | 60V | 185mA (Ta) | 4.5V, 10V | 3V @ 250µA | 1.7nC @ 15V | 23pF @ 25V | ±20V | - | 350mW (Ta) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 2.2A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,796,380 |
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MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 2.5V, 4.5V | 950mV @ 250µA | 10nC @ 4.5V | 375pF @ 6V | ±8V | - | 700mW (Ta) | 100 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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