Page 57 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SI7336ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 30A PPAK SO-8

Package: PowerPAK? SO-8

Stock182,424
SI4154DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 36A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock46,554
SI7421DN-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 6.4A 1212-8

Package: PowerPAK? 1212-8

Stock361,008
SI4840BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 40V 19A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock539,184
SI4840BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 19A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock118,968
SI7848BDP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 47A PPAK SO-8

Package: PowerPAK? SO-8

Stock60,420
SI7848BDP-T1-E3
Vishay Siliconix

MOSFET N-CH 40V 47A PPAK SO-8

Package: PowerPAK? SO-8

Stock16,104
SIR464DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

Package: PowerPAK? SO-8

Stock127,824
SIR802DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 30A PPAK SO-8

Package: PowerPAK? SO-8

Stock36,192
SI4459ADY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 29A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock54,480
SI7322DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 18A 1212-8

Package: PowerPAK? 1212-8

Stock4,896
SUD45P03-09-GE3
Vishay Siliconix

MOSFET P-CH 30V 45A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock583,920
SI7465DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 60V 3.2A PPAK SO-8

Package: PowerPAK? SO-8

Stock10,764
SI7465DP-T1-E3
Vishay Siliconix

MOSFET P-CH 60V 3.2A PPAK SO-8

Package: PowerPAK? SO-8

Stock64,812
SIR468DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock1,496,868
SUD19P06-60L-E3
Vishay Siliconix

MOSFET P-CH 60V 19A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock187,896
SI7414DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 5.6A 1212-8

Package: PowerPAK? 1212-8

Stock21,606
SI7414DN-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 5.6A 1212-8

Package: PowerPAK? 1212-8

Stock614,472
SI7820DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 1.7A 1212-8

Package: PowerPAK? 1212-8

Stock317,820
SI7101DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 35A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock43,392

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI7336ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta) Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock182,424	MOSFET (Metal Oxide)	30V	30A (Ta)	4.5V, 10V	3V @ 250µA	50nC @ 4.5V	5600pF @ 15V	±20V	-	5.4W (Ta)	3 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI4154DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 36A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock46,554	MOSFET (Metal Oxide)	40V	36A (Tc)	4.5V, 10V	2.5V @ 250µA	105nC @ 10V	4230pF @ 20V	±20V	-	3.5W (Ta), 7.8W (Tc)	3.3 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7421DN-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 6.4A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock361,008	MOSFET (Metal Oxide)	30V	6.4A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 10V	-	±20V	-	1.5W (Ta)	25 mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI4840BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 40V 19A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock539,184	MOSFET (Metal Oxide)	40V	19A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	2000pF @ 20V	±20V	-	2.5W (Ta), 6W (Tc)	9 mOhm @ 12.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4840BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 19A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock118,968	MOSFET (Metal Oxide)	40V	19A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	2000pF @ 20V	±20V	-	2.5W (Ta), 6W (Tc)	9 mOhm @ 12.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7848BDP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 47A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock60,420	MOSFET (Metal Oxide)	40V	47A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	2000pF @ 20V	±20V	-	4.2W (Ta), 36W (Tc)	9 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7848BDP-T1-E3	Vishay Siliconix	MOSFET N-CH 40V 47A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock16,104	MOSFET (Metal Oxide)	40V	47A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	2000pF @ 20V	±20V	-	4.2W (Ta), 36W (Tc)	9 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR464DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock127,824	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	95nC @ 10V	3545pF @ 15V	±20V	-	5.2W (Ta), 69W (Tc)	3.1 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR802DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 4.6W (Ta), 27.7W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock36,192	MOSFET (Metal Oxide)	20V	30A (Tc)	2.5V, 10V	1.5V @ 250µA	32nC @ 10V	1785pF @ 10V	±12V	-	4.6W (Ta), 27.7W (Tc)	5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI4459ADY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 29A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock54,480	MOSFET (Metal Oxide)	30V	29A (Tc)	4.5V, 10V	2.5V @ 250µA	195nC @ 10V	6000pF @ 15V	±20V	-	3.5W (Ta), 7.8W (Tc)	5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7322DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 18A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock4,896	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4.4V @ 250µA	20nC @ 10V	750pF @ 50V	±20V	-	3.8W (Ta), 52W (Tc)	58 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SUD45P03-09-GE3	Vishay Siliconix	MOSFET P-CH 30V 45A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock583,920	MOSFET (Metal Oxide)	30V	45A (Tc)	4.5V, 10V	2.5V @ 250µA	90nC @ 10V	2700pF @ 15V	±20V	-	2.1W (Ta), 41.7W (Tc)	8.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7465DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 60V 3.2A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock10,764	MOSFET (Metal Oxide)	60V	3.2A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 10V	-	±20V	-	1.5W (Ta)	64 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7465DP-T1-E3	Vishay Siliconix	MOSFET P-CH 60V 3.2A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock64,812	MOSFET (Metal Oxide)	60V	3.2A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 10V	-	±20V	-	1.5W (Ta)	64 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR468DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock1,496,868	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 10V	1720pF @ 15V	±20V	-	5W (Ta), 50W (Tc)	5.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SUD19P06-60L-E3	Vishay Siliconix	MOSFET P-CH 60V 19A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock187,896	MOSFET (Metal Oxide)	60V	19A (Tc)	4.5V, 10V	3V @ 250µA	40nC @ 10V	1710pF @ 25V	±20V	-	2.7W (Ta), 46W (Tc)	60 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7414DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 5.6A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock21,606	MOSFET (Metal Oxide)	60V	5.6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	-	±20V	-	1.5W (Ta)	25 mOhm @ 8.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI7414DN-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 5.6A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock614,472	MOSFET (Metal Oxide)	60V	5.6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	-	±20V	-	1.5W (Ta)	25 mOhm @ 8.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI7820DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 1.7A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock317,820	MOSFET (Metal Oxide)	200V	1.7A (Ta)	6V, 10V	4V @ 250µA	18nC @ 10V	-	±20V	-	1.5W (Ta)	240 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI7101DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 35A PPAK 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock43,392	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	102nC @ 10V	3595pF @ 15V	±25V	-	3.7W (Ta), 52W (Tc)	7.2 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI3440DV-T1-E3	Vishay Siliconix	MOSFET N-CH 150V 1.2A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 375 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock115,020	MOSFET (Metal Oxide)	150V	1.2A (Ta)	6V, 10V	4V @ 250µA	8nC @ 10V	-	±20V	-	1.14W (Ta)	375 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI7386DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock239,928	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	2.5V @ 250µA	18nC @ 4.5V	-	±20V	-	1.8W (Ta)	7 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR462DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock2,013,636	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 10V	1155pF @ 15V	±20V	-	4.8W (Ta), 41.7W (Tc)	7.9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7106DN-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock220,776	MOSFET (Metal Oxide)	20V	12.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	27nC @ 4.5V	-	±12V	-	1.5W (Ta)	6.2 mOhm @ 19.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI7625DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 35A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4427pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock4,048	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	126nC @ 10V	4427pF @ 15V	±20V	-	3.7W (Ta), 52W (Tc)	7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI4866BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 21.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock303,300	MOSFET (Metal Oxide)	12V	21.5A (Tc)	1.8V, 4.5V	1V @ 250µA	80nC @ 4.5V	5020pF @ 6V	±8V	-	2.5W (Ta), 4.45W (Tc)	5.3 mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SUD19P06-60-GE3	Vishay Siliconix	MOSFET P-CH 60V 18.3A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,492	MOSFET (Metal Oxide)	60V	18.3A (Tc)	4.5V, 10V	3V @ 250µA	40nC @ 10V	1710pF @ 25V	±20V	-	2.3W (Ta), 38.5W (Tc)	60 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7613DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 10V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 17A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock5,664	MOSFET (Metal Oxide)	20V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	87nC @ 10V	2620pF @ 10V	±16V	-	3.8W (Ta), 52.1W (Tc)	8.7 mOhm @ 17A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8