Page 55 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SI3410DV-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock601,200
IRFR110TRPBF
Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock70,356
TN2404K-T1-E3
Vishay Siliconix

MOSFET N-CH 240V 200MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock89,112
SIB452DK-T1-GE3
Vishay Siliconix

MOSFET N-CH 190V 1.5A SC75-6

Package: PowerPAK? SC-75-6L

Stock847,956
SI9433BDY-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 4.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock599,868
SI2323CDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 6A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock1,090,092
SI5471DC-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 6A 1206-8

Package: 8-SMD, Flat Lead

Stock20,628
SI7615ADN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 35A 1212-8S

Package: PowerPAK? 1212-8

Stock5,824
SQ2310ES-T1_GE3
Vishay Siliconix

MOSFET N-CH 20V 6A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock260,976
SI4410BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 7.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock652,464
IRLL014TRPBF
Vishay Siliconix

MOSFET N-CH 60V 2.7A SOT223

Package: TO-261-4, TO-261AA

Stock102,876
SIS427EDN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 50A 1212-8

Package: PowerPAK? 1212-8

Stock53,874
SI4420BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 9.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock795,444
IRFL9110TRPBF
Vishay Siliconix

MOSFET P-CH 100V 1.1A SOT223

Package: TO-261-4, TO-261AA

Stock1,217,472
IRLL110TRPBF
Vishay Siliconix

MOSFET N-CH 100V 1.5A SOT223

Package: TO-261-4, TO-261AA

Stock1,039,404
SI4435DDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 11.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,602,384
SI2314EDS-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 3.77A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock440,472
SI5415AEDU-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 25A CHIPFET

Package: PowerPAK? ChipFET? Single

Stock176,304
SI4128DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 10.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,658,396
SI5442DU-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 25A PPAK CHIPFET

Package: PowerPAK? ChipFET? Single

Stock227,832

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI3410DV-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 8A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 4.1W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock601,200	MOSFET (Metal Oxide)	30V	8A (Tc)	4.5V, 10V	3V @ 250µA	33nC @ 10V	1295pF @ 15V	±20V	-	2W (Ta), 4.1W (Tc)	19.5 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
IRFR110TRPBF	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock70,356	MOSFET (Metal Oxide)	100V	4.3A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	540 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
TN2404K-T1-E3	Vishay Siliconix	MOSFET N-CH 240V 200MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock89,112	MOSFET (Metal Oxide)	240V	200mA (Ta)	2.5V, 10V	2V @ 250µA	8nC @ 10V	-	±20V	-	360mW (Ta)	4 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SIB452DK-T1-GE3	Vishay Siliconix	MOSFET N-CH 190V 1.5A SC75-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 190V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-75-6L Single Package / Case: PowerPAK? SC-75-6L	Package: PowerPAK? SC-75-6L	Stock847,956	MOSFET (Metal Oxide)	190V	1.5A (Tc)	1.8V, 4.5V	1.5V @ 250µA	6.5nC @ 10V	135pF @ 50V	±16V	-	2.4W (Ta), 13W (Tc)	2.4 Ohm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Single	PowerPAK? SC-75-6L
SI9433BDY-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 4.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock599,868	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.7V, 4.5V	1.5V @ 250µA	14nC @ 4.5V	-	±12V	-	1.3W (Ta)	40 mOhm @ 6.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI2323CDS-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 6A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,090,092	MOSFET (Metal Oxide)	20V	6A (Tc)	1.8V, 4.5V	1V @ 250µA	25nC @ 4.5V	1090pF @ 10V	±8V	-	1.25W (Ta), 2.5W (Tc)	39 mOhm @ 4.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI5471DC-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 6A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2945pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock20,628	MOSFET (Metal Oxide)	20V	6A (Tc)	1.8V, 4.5V	1.1V @ 250µA	96nC @ 10V	2945pF @ 10V	±12V	-	2.5W (Ta), 6.3W (Tc)	20 mOhm @ 9.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI7615ADN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8S FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock5,824	MOSFET (Metal Oxide)	20V	35A (Tc)	2.5V, 10V	1.5V @ 250µA	183nC @ 10V	5590pF @ 10V	±12V	-	3.7W (Ta), 52W (Tc)	4.4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SQ2310ES-T1_GE3	Vishay Siliconix	MOSFET N-CH 20V 6A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock260,976	MOSFET (Metal Oxide)	20V	6A (Tc)	1.5V, 4.5V	1V @ 250µA	8.5nC @ 4.5V	485pF @ 10V	±8V	-	2W (Tc)	30 mOhm @ 5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-236	TO-236-3, SC-59, SOT-23-3
SI4410BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 7.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock652,464	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4.5V, 10V	3V @ 250µA	20nC @ 5V	-	±20V	-	1.4W (Ta)	13.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLL014TRPBF	Vishay Siliconix	MOSFET N-CH 60V 2.7A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock102,876	MOSFET (Metal Oxide)	60V	2.7A (Tc)	4V, 5V	2V @ 250µA	8.4nC @ 5V	400pF @ 25V	±10V	-	2W (Ta), 3.1W (Tc)	200 mOhm @ 1.6A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SIS427EDN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 50A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock53,874	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	66nC @ 10V	1930pF @ 15V	±25V	-	3.7W (Ta), 52W (Tc)	10.6 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI4420BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 9.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock795,444	MOSFET (Metal Oxide)	30V	9.5A (Ta)	4.5V, 10V	3V @ 250µA	50nC @ 10V	-	±20V	-	1.4W (Ta)	8.5 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFL9110TRPBF	Vishay Siliconix	MOSFET P-CH 100V 1.1A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 660mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,217,472	MOSFET (Metal Oxide)	100V	1.1A (Tc)	10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	1.2 Ohm @ 660mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRLL110TRPBF	Vishay Siliconix	MOSFET N-CH 100V 1.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,039,404	MOSFET (Metal Oxide)	100V	1.5A (Tc)	4V, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	±10V	-	2W (Ta), 3.1W (Tc)	540 mOhm @ 900mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SI4435DDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 11.4A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,602,384	MOSFET (Metal Oxide)	30V	11.4A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	1350pF @ 15V	±20V	-	2.5W (Ta), 5W (Tc)	24 mOhm @ 9.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI2314EDS-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 3.77A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock440,472	MOSFET (Metal Oxide)	20V	3.77A (Ta)	1.8V, 4.5V	950mV @ 250µA	14nC @ 4.5V	-	±12V	-	750mW (Ta)	33 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI5415AEDU-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 25A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 10A, 4.5V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? ChipFet Single Package / Case: PowerPAK? ChipFET? Single	Package: PowerPAK? ChipFET? Single	Stock176,304	MOSFET (Metal Oxide)	20V	25A (Tc)	1.8V, 4.5V	1V @ 250µA	120nC @ 8V	4300pF @ 10V	±8V	-	3.1W (Ta), 31W (Tc)	9.6 mOhm @ 10A, 4.5V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFet Single	PowerPAK? ChipFET? Single
SI4128DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 10.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,658,396	MOSFET (Metal Oxide)	30V	10.9A (Ta)	4.5V, 10V	2.5V @ 250µA	12nC @ 10V	435pF @ 15V	±20V	-	2.4W (Ta), 5W (Tc)	24 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI5442DU-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 25A PPAK CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? ChipFet Single Package / Case: PowerPAK? ChipFET? Single	Package: PowerPAK? ChipFET? Single	Stock227,832	MOSFET (Metal Oxide)	20V	25A (Tc)	1.8V, 4.5V	900mV @ 250µA	45nC @ 8V	1700pF @ 10V	±8V	-	3.1W (Ta), 31W (Tc)	10 mOhm @ 8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFet Single	PowerPAK? ChipFET? Single
SI2328DS-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 1.15A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 730mW (Ta) Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,560,560	MOSFET (Metal Oxide)	100V	1.15A (Ta)	10V	4V @ 250µA	5nC @ 10V	-	±20V	-	730mW (Ta)	250 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2316DS-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 2.9A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,380,708	MOSFET (Metal Oxide)	30V	2.9A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	7nC @ 10V	215pF @ 15V	±20V	-	700mW (Ta)	50 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2333DS-T1-E3	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,318,344	MOSFET (Metal Oxide)	12V	4.1A (Ta)	1.8V, 4.5V	1V @ 250µA	18nC @ 4.5V	1100pF @ 6V	±8V	-	750mW (Ta)	32 mOhm @ 5.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI4431CDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 9A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock92,088	MOSFET (Metal Oxide)	30V	9A (Tc)	4.5V, 10V	2.5V @ 250µA	38nC @ 10V	1006pF @ 15V	±20V	-	2.5W (Ta), 4.2W (Tc)	32 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SIS413DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 18A PPAK 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock4,512	MOSFET (Metal Oxide)	30V	18A (Tc)	4.5V, 10V	2.5V @ 250µA	110nC @ 10V	4280pF @ 15V	±20V	-	3.7W (Ta), 52W (Tc)	9.4 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SIS412DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A 1212-8 PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock4,103,892	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2.5V @ 250µA	12nC @ 10V	435pF @ 15V	±20V	-	3.2W (Ta), 15.6W (Tc)	24 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SIA429DJT-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 12A SC-70 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock191,076	MOSFET (Metal Oxide)	20V	12A (Tc)	1.5V, 4.5V	1V @ 250µA	62nC @ 8V	1750pF @ 10V	±8V	-	3.5W (Ta), 19W (Tc)	20.5 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
SI2343CDS-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 5.9A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,046,936	MOSFET (Metal Oxide)	30V	5.9A (Tc)	4.5V, 10V	2.5V @ 250µA	21nC @ 10V	590pF @ 15V	±20V	-	1.25W (Ta), 2.5W (Tc)	45 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3