Page 103 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

BSL806NL6327HTSA1
Infineon Technologies

MOSFET 2N-CH 20V 2.3A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock7,568
MP6M11TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 3.5A MPT6

Package: 6-SMD, Flat Leads

Stock5,872
FDS8962C
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 7A/5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock341,676
MMDF2C03HDR2G
ON Semiconductor

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,976
ZXMD63C03XTC
Diodes Incorporated

MOSFET N/P-CH 30V 8MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock4,720
APTM20HM08FG
Microsemi Corporation

MOSFET 4N-CH 200V 208A SP6

Package: SP6

Stock5,248
APTM20AM10STG
Microsemi Corporation

MOSFET 2N-CH 200V 175A SP4

Package: SP4

Stock4,224
APTC80TA15PG
Microsemi Corporation

MOSFET 6N-CH 800V 28A SP6P

Package: SP6

Stock5,776
SI4834CDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,784
SI1553CDL-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock855,912
SSFQ6810
Good-Ark Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

Package: -

Stock17,922
NTTFD2D8N03P1E
onsemi

MOSFET 2N-CH 30V 16.1A 12WQFN

Package: -

Request a Quote
BUK9K20-80EX
Nexperia USA Inc.

MOSFET 2N-CH 80V 23A LFPAK56D

Package: -

Stock4,650
DMC3060LVTQ-7
Diodes Incorporated

MOSFET N/P-CH 30V 3.6A TSOT26

Package: -

Request a Quote
DMT3009LEV-7
Diodes Incorporated

MOSFET 25V-30V POWERDI3333-8

Package: -

Request a Quote
SSM10N961L-ELF
Toshiba Semiconductor and Storage

30V N-CH COMMON DRAIN FET RSS:9.

Package: -

Stock28,470
SI4500BDY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 6.6A 8SOIC

Package: -

Request a Quote
FDMC9430L-F085
onsemi

MOSFET 2N-CH 40V 12A 8WDFN

Package: -

Stock14,037
SP8K3FRATB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

Package: -

Stock3,153
DMTH6016LPDQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI50

Package: -

Stock231

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL806NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 20V 2.3A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock7,568	Logic Level Gate	20V	2.3A	57 mOhm @ 2.3A, 2.5V	750mV @ 11µA	1.7nC @ 2.5V	259pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
MP6M11TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 3.5A MPT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	Package: 6-SMD, Flat Leads	Stock5,872	Logic Level Gate	30V	3.5A	98 mOhm @ 3.5A, 10V	2.5V @ 1mA	1.9nC @ 5V	85pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
FDS8962C	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 7A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock341,676	Logic Level Gate	30V	7A, 5A	30 mOhm @ 7A, 10V	3V @ 250µA	26nC @ 10V	575pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MMDF2C03HDR2G	ON Semiconductor	MOSFET N/P-CH 30V 4.1A/3A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,976	Logic Level Gate	30V	4.1A, 3A	70 mOhm @ 3A, 10V	3V @ 250µA	16nC @ 10V	630pF @ 24V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ZXMD63C03XTC	Diodes Incorporated	MOSFET N/P-CH 30V 8MSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock4,720	Logic Level Gate	30V	-	135 mOhm @ 1.7A, 10V	1V @ 250µA (Min)	8nC @ 10V	290pF @ 25V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
APTM20HM08FG	Microsemi Corporation	MOSFET 4N-CH 200V 208A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	Package: SP6	Stock5,248	Standard	200V	208A	10 mOhm @ 104A, 10V	5V @ 5mA	280nC @ 10V	14400pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20AM10STG	Microsemi Corporation	MOSFET 2N-CH 200V 175A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	Package: SP4	Stock4,224	Standard	200V	175A	12 mOhm @ 87.5A, 10V	5V @ 5mA	224nC @ 10V	13700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTC80TA15PG	Microsemi Corporation	MOSFET 6N-CH 800V 28A SP6P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Power - Max: 277W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	Package: SP6	Stock5,776	Standard	800V	28A	150 mOhm @ 14A, 10V	3.9V @ 2mA	180nC @ 10V	4507pF @ 25V	277W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
SI4834CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,784	Standard	30V	8A	20 mOhm @ 8A, 10V	3V @ 1mA	25nC @ 10V	950pF @ 15V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1553CDL-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Rds On (Max) @ Id, Vgs: 390 mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Power - Max: 340mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock855,912	Logic Level Gate	20V	700mA, 500mA	390 mOhm @ 700mA, 4.5V	1.5V @ 250µA	1.8nC @ 10V	38pF @ 10V	340mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SSFQ6810	Good-Ark Semiconductor	MOSFET 2N-CH 60V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 2.1W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock17,922	-	60V	5A (Tc)	54mOhm @ 5A, 10V	2.5V @ 250µA	21nC @ 10V	1300pF @ 25V	2.1W (Tc)	-50°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NTTFD2D8N03P1E	onsemi	MOSFET 2N-CH 30V 16.1A 12WQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V Power - Max: 1.04W (Ta), 26W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Supplier Device Package: 12-WQFN (3.3x3.3)	Package: -	Request a Quote	-	30V	16.1A (Ta), 80A (Tc)	2.5mOhm @ 18A, 10V	3V @ 400µA	20.8nC @ 10V, 20.5nC @ 10V	1500pF @ 15V, 1521pF @ 15V	1.04W (Ta), 26W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWQFN	12-WQFN (3.3x3.3)
BUK9K20-80EX	Nexperia USA Inc.	MOSFET 2N-CH 80V 23A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3462pF @ 25V Power - Max: 68W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: -	Stock4,650	Logic Level Gate	80V	23A (Ta)	17mOhm @ 10A, 10V	2.1V @ 1mA	25.5nC @ 5V	3462pF @ 25V	68W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
DMC3060LVTQ-7	Diodes Incorporated	MOSFET N/P-CH 30V 3.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V Power - Max: 830mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Request a Quote	-	30V	3.6A (Ta), 2.8A (Ta)	60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V	1.8V @ 250µA, 2.1V @ 250µA	11.3nC @ 10V, 8.6nC @ 10V	395pF @ 15V, 324pF @ 15V	830mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMT3009LEV-7	Diodes Incorporated	MOSFET 25V-30V POWERDI3333-8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SSM10N961L-ELF	Toshiba Semiconductor and Storage	30V N-CH COMMON DRAIN FET RSS:9. FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 880mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-XFLGA, CSP Supplier Device Package: TCSPAG-341501	Package: -	Stock28,470	-	30V	9A (Ta)	-	2.3V @ 250µA	17.3nC @ 10V	-	880mW (Ta)	150°C	Surface Mount	10-XFLGA, CSP	TCSPAG-341501
SI4500BDY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 6.6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	20V	6.6A, 3.8A	20mOhm @ 9.1A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	-	1.3W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDMC9430L-F085	onsemi	MOSFET 2N-CH 40V 12A 8WDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 984pF @ 20V Power - Max: 11.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3x3)	Package: -	Stock14,037	-	40V	12A	8mOhm @ 12A, 10V	3V @ 250µA	22nC @ 10V	984pF @ 20V	11.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WDFN (3x3)
SP8K3FRATB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock3,153	-	30V	7A (Ta)	24mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMTH6016LPDQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.2A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power - Max: 2.5W (Ta), 37.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	Package: -	Stock231	-	60V	9.2A (Ta), 33.2A (Tc)	19mOhm @ 10A, 10V	2.5V @ 250µA	17nC @ 10V	864pF @ 30V	2.5W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
NVMFD5C470NT1G	onsemi	MOSFET 2N-CH 40V 11.7A/36A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power - Max: 3.1W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	40V	11.7A (Ta), 36A (Tc)	11.7mOhm @ 10A, 10V	3.5V @ 250µA	8nC @ 10V	420pF @ 25V	3.1W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
FX205-TL-E	Sanyo	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMNH6035SPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 33A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V Power - Max: 2.4W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	Package: -	Stock7,500	-	60V	33A (Tc)	35mOhm @ 15A, 10V	3V @ 250µA	16nC @ 10V	879pF @ 25V	2.4W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
SI7252ADP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 9.3A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V Power - Max: 3.6W (Ta), 33.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock35,154	-	100V	9.3A (Ta), 28.7A (Tc)	18.6mOhm @ 10A, 10V	4V @ 250µA	26.5nC @ 10V	1266pF @ 50V	3.6W (Ta), 33.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
TSM300NB06LDCR	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 5A/24A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V Power - Max: 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	Package: -	Request a Quote	Logic Level Gate	60V	5A (Ta), 24A (Tc)	30mOhm @ 5A, 10V	2.5V @ 250µA	17nC @ 10V	966pF @ 30V	2W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFNU (5x6)
SQJ912BEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock13,311	-	40V	30A (Tc)	11mOhm @ 9A, 10V	2V @ 250µA	60nC @ 10V	3000pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
DMTH4007SPDWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Power - Max: 2.6W (Ta), 37.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (SWP)	Package: -	Request a Quote	-	40V	12.5A (Ta), 48A (Tc)	8.6mOhm @ 17A, 10V	4V @ 250µA	41.9nC @ 10V	2026pF @ 30V	2.6W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (SWP)
XP3700MT	YAGEO XSEMI	MOSFET N AND P-CH 30V 11A 7.3A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 7.3A(Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 960pF @ 15V Power - Max: 3.57W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PMPAK® 5 x 6	Package: -	Stock3,000	-	30V	11A (Ta), 7.3A(Ta)	18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V	2V @ 250µA	8.3nC @ 4.5V, 9.6nC @ 4.5V	900pF @ 15V, 960pF @ 15V	3.57W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PMPAK® 5 x 6