Page 102 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

TPC8211(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 5.5A SOP8

Package: 8-SOIC (0.173", 4.40mm Width)

Stock4,912
GWM70-01P2
IXYS

MOSFET 6N-CH 100V 70A ISODIL

Package: ISOPLUS-DIL?

Stock2,432
FDW2504P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.8A 8-TSSO

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock319,356
IRF7319PBF
Infineon Technologies

MOSFET N/P-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock225,516
ALD111910MAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 8MSOP

Package: -

Stock4,096
SP8M2FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 3.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock25,140
SI3585CDV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 3.9A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock701,904
DMP2100UCB9-7
Diodes Incorporated

MOSFET 2P-CH 20V 3A 9UWLB

Package: 9-UFBGA, WLBGA

Stock103,860
SH8J65TB1
Rohm Semiconductor

MOSFET 2P-CH 30V 7A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,232
SQJB40EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V SO8

Package: PowerPAK? SO-8 Dual

Stock7,056
SI3590DV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 2.5A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock653,100
DMP4047SSD-13
Diodes Incorporated

MOSFET 2P-CH 40V 5.1A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock25,428
IRF7101TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 3.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock898,284
IRF7324TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock27,792
NVMFD5C478NT1G
onsemi

MOSFET 2N-CH 40V 9.8A/27A 8DFN

Package: -

Request a Quote
MSCM20AM058G
Microchip Technology

MOSFET 2N-CH 200V 280A LP8

Package: -

Stock9
TP44440HB
Tagore Technology

GANFET 2N-CH 650V 30QFN

Package: -

Stock174
SSM6N39TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 1.6A UF6

Package: -

Request a Quote
DMP3011SPDW-13
Diodes Incorporated

MOSFET 2P-CH 30V 12.1A PWRDI50

Package: -

Request a Quote
DMTH6015LPDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.4A PWRDI50

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TPC8211(TE12L,Q,M)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 5.5A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	Package: 8-SOIC (0.173", 4.40mm Width)	Stock4,912	Logic Level Gate	30V	5.5A	36 mOhm @ 3A, 10V	2.5V @ 1mA	25nC @ 10V	1250pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
GWM70-01P2	IXYS	MOSFET 6N-CH 100V 70A ISODIL FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Rds On (Max) @ Id, Vgs: 14 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL? Supplier Device Package: ISOPLUS-DIL?	Package: ISOPLUS-DIL?	Stock2,432	Standard	100V	70A	14 mOhm @ 35A, 10V	4V @ 1mA	110nC @ 10V	-	-	-40°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL?	ISOPLUS-DIL?
FDW2504P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.8A 8-TSSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock319,356	Logic Level Gate	20V	3.8A	43 mOhm @ 3.8A, 4.5V	1.5V @ 250µA	16nC @ 4.5V	1030pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF7319PBF	Infineon Technologies	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock225,516	Standard	30V	-	29 mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD111910MAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 8MSOP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock4,096	-	-	-	-	-	-	-	-	-	-	-	-
SP8M2FU6TB	Rohm Semiconductor	MOSFET N/P-CH 30V 3.5A 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock25,140	Standard	30V	3.5A	83 mOhm @ 3.5A, 10V	2.5V @ 1mA	3.5nC @ 5V	140pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI3585CDV-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 3.9A 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Power - Max: 1.4W, 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock701,904	Logic Level Gate	20V	3.9A, 2.1A	58 mOhm @ 2.5A, 4.5V	1.5V @ 250µA	4.8nC @ 10V	150pF @ 10V	1.4W, 1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
DMP2100UCB9-7	Diodes Incorporated	MOSFET 2P-CH 20V 3A 9UWLB FET Type: 2 P-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, WLBGA Supplier Device Package: U-WLB1515-9	Package: 9-UFBGA, WLBGA	Stock103,860	Logic Level Gate	20V	3A	100 mOhm @ 1A, 4.5V	900mV @ 250µA	4.2nC @ 4.5V	310pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	9-UFBGA, WLBGA	U-WLB1515-9
SH8J65TB1	Rohm Semiconductor	MOSFET 2P-CH 30V 7A SOP8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,232	Logic Level Gate	30V	7A	29 mOhm @ 7A, 10V	2.5V @ 1mA	18nC @ 5V	1200pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SQJB40EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock7,056	Standard	40V	30A (Tc)	8 mOhm @ 8A, 10V	2.5V @ 250µA	35nC @ 10V	1900pF @ 25V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI3590DV-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 2.5A 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock653,100	Logic Level Gate	30V	2.5A, 1.7A	77 mOhm @ 3A, 4.5V	1.5V @ 250µA	4.5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
DMP4047SSD-13	Diodes Incorporated	MOSFET 2P-CH 40V 5.1A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock25,428	Logic Level Gate	40V	5.1A	45 mOhm @ 4.4A, 10V	3V @ 250µA	21.5nC @ 10V	1154pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7101TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock898,284	Logic Level Gate	20V	3.5A	100 mOhm @ 1.8A, 10V	3V @ 250µA	15nC @ 10V	320pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7324TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock27,792	Logic Level Gate	20V	9A	18 mOhm @ 9A, 4.5V	1V @ 250µA	63nC @ 5V	2940pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NVMFD5C478NT1G	onsemi	MOSFET 2N-CH 40V 9.8A/27A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Power - Max: 3.1W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	40V	9.8A (Ta), 27A (Tc)	17mOhm @ 7.5A, 10V	3.5V @ 20µA	6.3nC @ 10V	325pF @ 25V	3.1W (Ta), 23W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
MSCM20AM058G	Microchip Technology	MOSFET 2N-CH 200V 280A LP8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: LP8	Package: -	Stock9	-	200V	280A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	LP8
TP44440HB	Tagore Technology	GANFET 2N-CH 650V 30QFN FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 472mOhm @ 500mA, 6V Vgs(th) (Max) @ Id: 2.5V @ 2.8mA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 400V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 30-PowerWFQFN Supplier Device Package: 30-QFN (8x10)	Package: -	Stock174	-	650V	6.5A (Tc)	472mOhm @ 500mA, 6V	2.5V @ 2.8mA	0.75nC @ 6V	28pF @ 400V	-	-55°C ~ 150°C (TJ)	Surface Mount	30-PowerWFQFN	30-QFN (8x10)
SSM6N39TU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 1.6A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Power - Max: 500mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	Package: -	Request a Quote	-	20V	1.6A (Ta)	119mOhm @ 1A, 4V	1V @ 1mA	7.5nC @ 4V	260pF @ 10V	500mW	150°C	Surface Mount	6-SMD, Flat Leads	UF6
DMP3011SPDW-13	Diodes Incorporated	MOSFET 2P-CH 30V 12.1A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 38.2A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 15V Power - Max: 1.4W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	Package: -	Request a Quote	-	30V	12.1A (Ta), 38.2A (Tc)	13mOhm @ 11.5A, 10V	3V @ 250µA	46nC @ 10V	2380pF @ 15V	1.4W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMTH6015LPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.4A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Power - Max: 2.6W (Ta), 39.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	Package: -	Request a Quote	-	60V	9.4A (Ta), 36.3A (Tc)	20mOhm @ 10A, 10V	2.5V @ 250µA	14.3nC @ 10V	825pF @ 30V	2.6W (Ta), 39.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
G170P03S2	Goford Semiconductor	MOSFET 2P-CH 30V 9A 8SOP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1786pF @ 4.5V Power - Max: 1.4W (Tc) Operating Temperature: -55°C ~ 150°C (Tc) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock11,211	-	30V	9A (Tc)	25mOhm @ 5A, 4.5V	2.5V @ 250µA	18nC @ 10V	1786pF @ 4.5V	1.4W (Tc)	-55°C ~ 150°C (Tc)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HP8KB7TB1	Rohm Semiconductor	40V 24A, DUAL NCH+NCH, HSOP8, PO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V Power - Max: 3W (Ta), 26W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	Package: -	Stock7,500	-	40V	16A (Ta), 24A (Tc)	8mOhm @ 16A, 10V	2.5V @ 1mA	27nC @ 10V	1570pF @ 20V	3W (Ta), 26W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
FS5AS-06-T13-B21	Renesas Electronics Corporation	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN62D2UVQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500µW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	60V	450mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500µW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN32D0LVQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.68A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	30V	680mA (Ta)	1.2Ohm @ 100mA, 4V	1.2V @ 250µA	0.62nC @ 4.5V	44.8pF @ 15V	480mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN10H220LPDW-13	Diodes Incorporated	MOSFET 2N-CH 100V 8A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 25V Power - Max: 2.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	Package: -	Request a Quote	-	100V	8A (Tc)	222mOhm @ 2A, 10V	2.5V @ 250µA	6.7nC @ 10V	384pF @ 25V	2.2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
HP8KE7TB1	Rohm Semiconductor	MOSFET 2N-CH 100V 10A/24A 8HSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V Power - Max: 3W (Ta), 26W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	Package: -	Stock7,425	-	100V	10A (Ta), 24A (Tc)	19.6mOhm @ 10A, 10V	2.5V @ 1mA	19.8nC @ 10V	1100pF @ 50V	3W (Ta), 26W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
PJS6816_S1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 5.2A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	Package: -	Stock15,132	-	20V	5.2A (Ta)	29mOhm @ 5.2A, 4.5V	1.2V @ 250µA	7nC @ 4.5V	513pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6