Page 17 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

94-3449
Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,776
SI4906DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 40V 6.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock428,712
SI1551DL-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock2,454,996
NDS9953A
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 2.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock219,156
IRF7314PBF
Infineon Technologies

MOSFET 2P-CH 20V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock360,996
EMH2407-S-TL-H
ON Semiconductor

MOSFET 2N-CH 20V 6A EMH8

Package: 8-SMD, Flat Lead

Stock5,104
DMP2004DMK-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.55A SOT-26

Package: SOT-23-6

Stock420,000
ZXMN10A08DN8TA
Diodes Incorporated

MOSFET 2N-CH 100V 1.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock394,836
BSS84AKV,115
Nexperia USA Inc.

MOSFET 2P-CH 50V 0.17A SOT666

Package: SOT-563, SOT-666

Stock5,616
CSD87353Q5D
Texas Instruments

MOSFET 2N-CH 30V 40A 8LSON

Package: 8-PowerLDFN

Stock6,608
FDS6912
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock11,024,736
FDMS3606S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/27A PWR56

Package: 8-PowerTDFN

Stock15,516
DMP4050SSDQ-13
Diodes Incorporated

MOSFET 2P-CH 40V 4A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,160
DMN4026SSD-13
Diodes Incorporated

MOSFET 2N-CH 40V 7A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock144,360
IRLHS6376TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 3.6A PQFN

Package: 6-VDFN Exposed Pad

Stock107,796
SI4925DDY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock48,180
OP528-005
WeEn Semiconductors

MOSFET

Package: -

Request a Quote
RF1K49223
Harris Corporation

MOSFET 2P-CH 30V 2.5A 8SOIC

Package: -

Request a Quote
SFT1427-TL-E
Sanyo

MOSFET N-CH

Package: -

Request a Quote
MSCSM120TAM16CTPAG
Microchip Technology

SIC 6N-CH 1200V 171A SP6-P

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
94-3449	Infineon Technologies	MOSFET 2P-CH 55V 3.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,776	Logic Level Gate	55V	3.4A	105 mOhm @ 3.4A, 10V	1V @ 250µA	38nC @ 10V	690pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4906DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 6.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock428,712	Standard	40V	6.6A	39 mOhm @ 5A, 10V	2.2V @ 250µA	22nC @ 10V	625pF @ 20V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1551DL-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 290mA, 410mA Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock2,454,996	Logic Level Gate	20V	290mA, 410mA	1.9 Ohm @ 290mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
NDS9953A	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 2.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock219,156	Logic Level Gate	30V	2.9A	130 mOhm @ 1A, 10V	2.8V @ 250µA	25nC @ 10V	350pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7314PBF	Infineon Technologies	MOSFET 2P-CH 20V 5.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock360,996	Logic Level Gate	20V	5.3A	58 mOhm @ 2.9A, 4.5V	700mV @ 250µA	29nC @ 4.5V	780pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EMH2407-S-TL-H	ON Semiconductor	MOSFET 2N-CH 20V 6A EMH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	Package: 8-SMD, Flat Lead	Stock5,104	-	-	-	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	8-EMH
DMP2004DMK-7	Diodes Incorporated	MOSFET 2P-CH 20V 0.55A SOT-26 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 550mA Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	Package: SOT-23-6	Stock420,000	Logic Level Gate	20V	550mA	900 mOhm @ 430mA, 4.5V	1V @ 250µA	-	175pF @ 16V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
ZXMN10A08DN8TA	Diodes Incorporated	MOSFET 2N-CH 100V 1.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.6A Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock394,836	Logic Level Gate	100V	1.6A	250 mOhm @ 3.2A, 10V	2V @ 250µA (Min)	7.7nC @ 10V	405pF @ 50V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSS84AKV,115	Nexperia USA Inc.	MOSFET 2P-CH 50V 0.17A SOT666 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	Package: SOT-563, SOT-666	Stock5,616	Logic Level Gate	50V	170mA	7.5 Ohm @ 100mA, 10V	2.1V @ 250µA	0.35nC @ 5V	36pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
CSD87353Q5D	Texas Instruments	MOSFET 2N-CH 30V 40A 8LSON FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3190pF @ 15V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	Package: 8-PowerLDFN	Stock6,608	Logic Level Gate	30V	40A	3.4 Ohm @ 4.5V	2.1V @ 250µA	19nC @ 4.5V	3190pF @ 15V	12W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
FDS6912	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock11,024,736	Logic Level Gate	30V	6A	28 mOhm @ 6A, 10V	3V @ 250µA	10nC @ 5V	740pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3606S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/27A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 27A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	Package: 8-PowerTDFN	Stock15,516	Logic Level Gate	30V	13A, 27A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1785pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
DMP4050SSDQ-13	Diodes Incorporated	MOSFET 2P-CH 40V 4A 8SO FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,160	Standard	40V	4A	50 mOhm @ 6A, 10V	3V @ 250µA	13.9nC @ 10V	674pF @ 20V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN4026SSD-13	Diodes Incorporated	MOSFET 2N-CH 40V 7A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock144,360	Logic Level Gate	40V	7A	24 mOhm @ 6A, 10V	3V @ 250µA	19.1nC @ 10V	1060pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRLHS6376TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 3.6A PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-PQFN (2x2)	Package: 6-VDFN Exposed Pad	Stock107,796	Logic Level Gate	30V	3.6A	63 mOhm @ 3.4A, 4.5V	1.1V @ 10µA	2.8nC @ 4.5V	270pF @ 25V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-PQFN (2x2)
SI4925DDY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 29 mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Power - Max: 5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock48,180	Standard	30V	8A	29 mOhm @ 7.3A, 10V	3V @ 250µA	50nC @ 10V	1350pF @ 15V	5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
OP528-005	WeEn Semiconductors	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
RF1K49223	Harris Corporation	MOSFET 2P-CH 30V 2.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	-	30V	2.5A	-	-	-	-	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SFT1427-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120TAM16CTPAG	Microchip Technology	SIC 6N-CH 1200V 171A SP6-P FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 728W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6-P	Package: -	Request a Quote	-	1200V (1.2kV)	171A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	728W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6-P
FDMC0208	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQJB68EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 100V 11A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock51,204	-	100V	11A (Tc)	92mOhm @ 4A, 10V	2.5V @ 250µA	8nC @ 10V	280pF @ 25V	27W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
DMN2009UCA4-7	Diodes Incorporated	MOSFET 20V 10.3A X4-DSN1717-4 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 640µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, DSBGA Supplier Device Package: X4-DSN1717-4	Package: -	Request a Quote	-	20V	10.3A (Ta)	11.9mOhm @ 2.5A, 4.5V	1.4V @ 640µA	17.5nC @ 4V	1780pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, DSBGA	X4-DSN1717-4
MSCSM170HM45CT3AG	Microchip Technology	SIC 4N-CH 1700V 64A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock12	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
NTMFD5C446NLT1G	onsemi	MOSFET 2N-CH 40V 25A/145A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Power - Max: 3.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	40V	25A (Ta), 145A (Tc)	2.65mOhm @ 20A, 10V	2.2V @ 90µA	54nC @ 10V	3170pF @ 25V	3.5W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
SQS944ENW-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 6A PWRPAK1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V Power - Max: 27.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8W Dual Supplier Device Package: PowerPAK® 1212-8W Dual	Package: -	Request a Quote	-	40V	6A (Tc)	25mOhm @ 1.25A, 10V	2.5V @ 250µA	10nC @ 10V	615pF @ 25V	27.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK® 1212-8W Dual	PowerPAK® 1212-8W Dual
DMP3056LSDQ-13	Diodes Incorporated	MOSFET 2P-CH 30V 6.9A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Stock166,182	-	30V	6.9A (Ta)	45mOhm @ 6A, 10V	2.1V @ 250µA	13.7nC @ 4.5V	722pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN2053UVT-7	Diodes Incorporated	MOSFET 2N-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Stock18,297	-	20V	4.6A (Ta)	35mOhm @ 5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V	369pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26