Page 18 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

BSO615N
Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock295,152
SSD2009ATF
Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock423,492
HUFA76404DK8T
Fairchild/ON Semiconductor

MOSFET 2N-CH 62V 3.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock29,340
AO7800
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock121,229,124
ALD110902PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

Package: 8-DIP (0.300", 7.62mm)

Stock7,328
SI6913DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 4.9A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock15,780
TC6320TG-G
Microchip Technology

MOSFET N/P-CH 200V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock27,672
CSD87312Q3E
Texas Instruments

MOSFET 2N-CH 30V 27A 8VSON

Package: 8-PowerTDFN

Stock84,252
NTJD4401NT1G
ON Semiconductor

MOSFET 2N-CH 20V 0.63A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock2,285,172
STL15DN4F5
STMicroelectronics

MOSFET 2N-CH 40V 60A POWERFLAT

Package: 8-PowerVDFN

Stock5,216
SIA910EDJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 12V 4.5A SC-70-6

Package: PowerPAK? SC-70-6 Dual

Stock457,260
DMN63D1LVQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

Package: -

Request a Quote
UPA2756GR-E1-AT
Renesas Electronics Corporation

MOSFET 2N-CH 60V 4A 8SOP

Package: -

Request a Quote
EPC7018DC
EPC Space, LLC

GAN FET HEMT 100V 74A COTS 4UD

Package: -

Stock300
SQJB60EP-T2_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

Package: -

Request a Quote
AOSD32334C
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 7A 8SOIC

Package: -

Stock456,336
NTLTD7900ZR2
onsemi

MOSFET 2N-CH 20V 6A MICRO8

Package: -

Request a Quote
PJX8838_R1_00001
Panjit International Inc.

MOSFET 2N-CH 50V 0.36A SOT563

Package: -

Stock41,340
FF08MR12W1MA1B11ABPSA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

Package: -

Stock57
CSD86350Q5DT
Texas Instruments

MOSFET 2N-CH 25V 40A 8LSON

Package: -

Stock750

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSO615N	Infineon Technologies	MOSFET 2N-CH 60V 2.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	Package: 8-SOIC (0.154", 3.90mm Width)	Stock295,152	Logic Level Gate	60V	2.6A	150 mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
SSD2009ATF	Fairchild/ON Semiconductor	MOSFET 2N-CH 50V 3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock423,492	Logic Level Gate	50V	3A	130 mOhm @ 3A, 10V	3V @ 250µA	25nC @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HUFA76404DK8T	Fairchild/ON Semiconductor	MOSFET 2N-CH 62V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock29,340	Logic Level Gate	62V	3.6A	110 mOhm @ 3.6A, 10V	3V @ 250µA	4.9nC @ 5V	250pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AO7800	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock121,229,124	Logic Level Gate	20V	900mA	300 mOhm @ 900mA, 4.5V	900mV @ 250µA	1.9nC @ 4.5V	120pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
ALD110902PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V Vgs(th) (Max) @ Id: 220mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	Package: 8-DIP (0.300", 7.62mm)	Stock7,328	Standard	10.6V	-	500 Ohm @ 4.2V	220mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SI6913DQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 4.9A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 400µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock15,780	Logic Level Gate	12V	4.9A	21 mOhm @ 5.8A, 4.5V	900mV @ 400µA	28nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
TC6320TG-G	Microchip Technology	MOSFET N/P-CH 200V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock27,672	Standard	200V	-	7 Ohm @ 1A, 10V	2V @ 1mA	-	110pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CSD87312Q3E	Texas Instruments	MOSFET 2N-CH 30V 27A 8VSON FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A Rds On (Max) @ Id, Vgs: 33 mOhm @ 7A , 8V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	Package: 8-PowerTDFN	Stock84,252	Logic Level Gate	30V	27A	33 mOhm @ 7A , 8V	1.3V @ 250µA	8.2nC @ 4.5V	1250pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
NTJD4401NT1G	ON Semiconductor	MOSFET 2N-CH 20V 0.63A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock2,285,172	Logic Level Gate	20V	630mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
STL15DN4F5	STMicroelectronics	MOSFET 2N-CH 40V 60A POWERFLAT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Power - Max: 60W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	Package: 8-PowerVDFN	Stock5,216	Logic Level Gate	40V	60A	9 mOhm @ 7.5A, 10V	4V @ 250µA	25nC @ 10V	1550pF @ 25V	60W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
SIA910EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock457,260	Logic Level Gate	12V	4.5A	28 mOhm @ 5.2A, 4.5V	1V @ 250µA	16nC @ 8V	455pF @ 6V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
DMN63D1LVQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 477mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 450mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	60V	477mA (Ta)	2Ohm @ 500mA, 10V	2.5V @ 1mA	1.04nC @ 10V	41pF @ 30V	450mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
UPA2756GR-E1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 60V 4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP	Package: -	Request a Quote	Logic Level Gate	60V	4A	105mOhm @ 2A, 10V	2.5V @ 1mA	6nC @ 10V	260pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-PSOP
EPC7018DC	EPC Space, LLC	GAN FET HEMT 100V 74A COTS 4UD FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-SMD	Package: -	Stock300	-	100V	70A (Tc)	6.5mOhm @ 70A, 5V	2.5V @ 5mA	17nC @ 5V	1700pF @ 50V	-	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, No Lead	4-SMD
SQJB60EP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Request a Quote	-	60V	30A (Tc)	12mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1600pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
AOSD32334C	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Stock456,336	-	30V	7A (Ta)	20mOhm @ 7A, 10V	2.3V @ 250µA	20nC @ 10V	600pF @ 15V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTLTD7900ZR2	onsemi	MOSFET 2N-CH 20V 6A MICRO8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJX8838_R1_00001	Panjit International Inc.	MOSFET 2N-CH 50V 0.36A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock41,340	-	50V	360mA (Ta)	1.45Ohm @ 500mA, 10V	1V @ 250µA	0.95nC @ 4.5V	36pF @ 25V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FF08MR12W1MA1B11ABPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A (Tj) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 150A, 15V Vgs(th) (Max) @ Id: 5.55V @ 90mA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 600V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	Package: -	Stock57	-	1200V (1.2kV)	150A (Tj)	9.8mOhm @ 150A, 15V	5.55V @ 90mA	450nC @ 15V	16000pF @ 600V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1BM-2
CSD86350Q5DT	Texas Instruments	MOSFET 2N-CH 25V 40A 8LSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V Power - Max: 13W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	Package: -	Stock750	-	25V	40A (Ta)	5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V	2.1V @ 250µA, 1.6V @ 250µA	10.7nC @ 4.5V, 25nC @ 4.5V	1870pF @ 12.5V, 4000pF @ 12.5V	13W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
MMDF2P02ER2	onsemi	MOSFET PWR P-CH 25V 2.5A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 16V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	25V	2.5A	250mOhm @ 2A, 10V	3V @ 250µA	15nC @ 10V	475pF @ 16V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
EPC2102	EPC	GANFET 2N-CH 60V 23A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Stock375	-	60V	23A	4.4mOhm @ 20A, 5V	2.5V @ 7mA	6.8nC @ 5V	830pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
UPA1601GS-E1-A	Renesas	MOSFET 7N-CH 30V 0.27A 16SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 150mA, 4V Vgs(th) (Max) @ Id: 800mV @ 150mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Power - Max: 1W (Ta) Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.220", 5.59mm Width) Supplier Device Package: 16-SOP	Package: -	Request a Quote	-	30V	270mA (Ta)	5.3Ohm @ 150mA, 4V	800mV @ 150mA	-	15pF @ 10V	1W (Ta)	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.220", 5.59mm Width)	16-SOP
FF4MR12W2M1HPB11BPSA1	Infineon Technologies	LOW POWER EASY FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 170A Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V Vgs(th) (Max) @ Id: 5.15V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2B	Package: -	Stock54	-	1200V (1.2kV)	170A	4mOhm @ 200A, 18V	5.15V @ 80mA	594nC @ 18V	17600pF @ 800V	20mW	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY2B
FS50UMJ-3	Renesas Electronics Corporation	MOSFET N-CH 150V 50A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UM6K31NFHATCN	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A UMT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	Package: -	Stock7,290	-	60V	250mA (Ta)	2.4Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
SQJB60EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	Package: -	Stock4,290	-	60V	30A (Tc)	12mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1600pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
FF4MR12KM1H	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-