Page 191 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

BSL306NL6327HTSA1
Infineon Technologies

MOSFET 2N-CH 30V 2.3A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock6,976
BSO4804
Infineon Technologies

MOSFET 2N-CH 30V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock24,540
FDS6982AS_G
Fairchild/ON Semiconductor

MOSFET 2N-CH 8SOIC

Package: -

Stock3,280
AO4850L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 75V 2.3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock12,924
EPC2104ENG
EPC

TRANS GAN 2N-CH 100V BUMPED DIE

Package: Die

Stock4,224
PMDPB42UN,115
NXP

MOSFET 2N-CH 20V 3.9A HUSON6

Package: 6-UDFN Exposed Pad

Stock198,600
AON6936
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/40A 8DFN

Package: 8-PowerVDFN

Stock6,576
MP6M12TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 5A MPT6

Package: 6-SMD, Flat Leads

Stock3,344
SI6963BDQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 3.4A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock1,060,884
BSG0813NDIATMA1
Infineon Technologies

MOSFET 2N-CH 25V 19A/33A 8TISON

Package: 8-PowerTDFN

Stock3,024
SLA5037
Sanken

MOSFET 4N-CH 100V 10A 12SIP

Package: 12-SIP, Exposed Tab

Stock2,960
AON6850
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 100V 5A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock3,424
CSD87334Q3D
Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

Package: 8-PowerTDFN

Stock6,464
IRFH4251DTRPBF
Infineon Technologies

MOSFET 2N-CH 25V 64A/188A PQFN

Package: 8-PowerVDFN

Stock12,408
FDPC5018SG
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V PWRCLIP56

Package: 8-PowerWDFN

Stock6,976
DMN53D0LDW-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.36A SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock34,800
SI7905DN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 40V 6A PPAK 1212-8

Package: PowerPAK? 1212-8 Dual

Stock4,880
GSFK0502
Good-Ark Semiconductor

MOSFET 2N-CH 50V 0.3A SOT363

Package: -

Stock8,970
IRF7341QTRPBF
Infineon Technologies

MOSFET 2N-CH 55V 5.1A 8-SOIC

Package: -

Request a Quote
SIL2300-TP
Micro Commercial Co

MOSFET 2N-CH 20V 4A SOT23-6L

Package: -

Stock6,876

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL306NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 30V 2.3A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock6,976	Logic Level Gate	30V	2.3A	57 mOhm @ 2.3A, 10V	2V @ 11µA	1.6nC @ 5V	275pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
BSO4804	Infineon Technologies	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock24,540	Logic Level Gate	30V	8A	20 mOhm @ 8A, 10V	2V @ 30µA	17nC @ 5V	870pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6982AS_G	Fairchild/ON Semiconductor	MOSFET 2N-CH 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock3,280	-	-	-	-	-	-	-	-	-	-	-	-
AO4850L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 75V 2.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock12,924	Logic Level Gate	75V	2.3A	130 mOhm @ 3.1A, 10V	3V @ 250µA	7nC @ 10V	380pF @ 30V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EPC2104ENG	EPC	TRANS GAN 2N-CH 100V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock4,224	GaNFET (Gallium Nitride)	100V	23A	6.3 mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
PMDPB42UN,115	NXP	MOSFET 2N-CH 20V 3.9A HUSON6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	Package: 6-UDFN Exposed Pad	Stock198,600	Logic Level Gate	20V	3.9A	50 mOhm @ 3.9A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	185pF @ 10V	510mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
AON6936	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 22A/40A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A, 40A Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 984pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	Package: 8-PowerVDFN	Stock6,576	Logic Level Gate	30V	22A, 40A	4.9 mOhm @ 20A, 10V	2.5V @ 250µA	24nC @ 10V	984pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
MP6M12TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 5A MPT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	Package: 6-SMD, Flat Leads	Stock3,344	Logic Level Gate	30V	5A	42 mOhm @ 5A, 10V	2.5V @ 1mA	4nC @ 5V	250pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
SI6963BDQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 3.4A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock1,060,884	Logic Level Gate	20V	3.4A	45 mOhm @ 3.9A, 4.5V	1.4V @ 250µA	11nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
BSG0813NDIATMA1	Infineon Technologies	MOSFET 2N-CH 25V 19A/33A 8TISON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A, 33A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V Power - Max: 2.5W Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	Package: 8-PowerTDFN	Stock3,024	Logic Level Gate, 4.5V Drive	25V	19A, 33A	3 mOhm @ 20A, 10V	2V @ 250µA	8.4nC @ 4.5V	1100pF @ 12V	2.5W	-55°C ~ 155°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
SLA5037	Sanken	MOSFET 4N-CH 100V 10A 12SIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 80 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	Package: 12-SIP, Exposed Tab	Stock2,960	Logic Level Gate	100V	10A	80 mOhm @ 5A, 10V	2V @ 250mA	-	1630pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
AON6850	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 100V 5A 8DFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 50V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (5x6)	Package: 8-PowerSMD, Flat Leads	Stock3,424	Standard	100V	5A	35 mOhm @ 5A, 10V	4V @ 250µA	29nC @ 10V	1840pF @ 50V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (5x6)
CSD87334Q3D	Texas Instruments	MOSFET 2N-CH 30V 20A 8SON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	Package: 8-PowerTDFN	Stock6,464	Logic Level Gate	30V	20A	6 mOhm @ 12A, 8V	1.2V @ 250µA	8.3nC @ 4.5V	1260pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
IRFH4251DTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 64A/188A PQFN FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 188A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Power - Max: 31W, 63W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6)	Package: 8-PowerVDFN	Stock12,408	Logic Level Gate	25V	64A, 188A	3.2 mOhm @ 30A, 10V	2.1V @ 35µA	15nC @ 4.5V	1314pF @ 13V	31W, 63W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)
FDPC5018SG	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V PWRCLIP56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Power - Max: 1W, 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	Package: 8-PowerWDFN	Stock6,976	Standard	30V	17A, 32A	5 mOhm @ 17A, 10V	3V @ 250µA	24nC @ 10V	1715pF @ 15V	1W, 1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
DMN53D0LDW-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock34,800	Logic Level Gate	50V	360mA	1.6 Ohm @ 500mA, 10V	1.5V @ 250µA	0.6nC @ 4.5V	46pF @ 25V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SI7905DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 40V 6A PPAK 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V Power - Max: 20.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	Package: PowerPAK? 1212-8 Dual	Stock4,880	Standard	40V	6A	60 mOhm @ 5A, 10V	3V @ 250µA	30nC @ 10V	880pF @ 20V	20.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
GSFK0502	Good-Ark Semiconductor	MOSFET 2N-CH 50V 0.3A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V Power - Max: 900mW (Ta) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock8,970	-	50V	300mA (Ta)	4Ohm @ 300mA, 10V	1.5V @ 250µA	0.58nC @ 4.5V	12pF @ 30V	900mW (Ta)	-50°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
IRF7341QTRPBF	Infineon Technologies	MOSFET 2N-CH 55V 5.1A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Power - Max: 2.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	Logic Level Gate	55V	5.1A	50mOhm @ 5.1A, 10V	1V @ 250µA (Min)	44nC @ 10V	780pF @ 25V	2.4W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIL2300-TP	Micro Commercial Co	MOSFET 2N-CH 20V 4A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	Package: -	Stock6,876	-	20V	4A (Tc)	25mOhm @ 4A, 4.5V	1V @ 250µA	4.2nC @ 4.5V	620pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
IAUC60N04S6L045HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 60A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V Power - Max: 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-57	Package: -	Stock88,344	Logic Level Gate	40V	60A (Tj)	4.5mOhm @ 30A, 10V	2V @ 13µA	19nC @ 10V	1136pF @ 25V	52W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-57
MSCSM170HRM233AG	Microchip Technology	SIC 4N-CH 1700V/1200V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc), 89A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA, 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, 3020pF @ 1000V Power - Max: 602W (Tc), 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	124A (Tc), 89A (Tc)	22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V	3.2V @ 5mA, 2.8V @ 3mA	356nC @ 20V, 232nC @ 20V	6600pF @ 1000V, 3020pF @ 1000V	602W (Tc), 395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
IRF7304QTRPBF	Infineon Technologies	MOSFET 2P-CH 20V 4.3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	Logic Level Gate	20V	4.3A	90mOhm @ 2.2A, 4.5V	700mV @ 250µA	22nC @ 4.5V	610pF @ 15V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSM180D12P2E002	Rohm Semiconductor	SIC 2N-CH 1200V 204A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 35.2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V Power - Max: 1360W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: -	Request a Quote	-	1200V (1.2kV)	204A (Tc)	-	4V @ 35.2mA	-	18000pF @ 10V	1360W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
SH8K51GZETB	Rohm Semiconductor	MOSFET 2N-CH 35V 4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	35V	4A (Ta)	58mOhm @ 4A, 10V	2.8V @ 1mA	5.6nC @ 5V	300pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN12M8UCA10-7	Diodes Incorporated	MOSFET 2N-CH 12V 25A X4-DSN3015 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 2504pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: X4-DSN3015-10	Package: -	Stock14,985	-	12V	25A (Ta)	2.8mOhm @ 6A, 4.5V	1.4V @ 1.11mA	36.4nC @ 4V	2504pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	X4-DSN3015-10
IRF8910TRPBF-1	Infineon Technologies	MOSFET 2N-CH 20V 10A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	-	20V	10A (Ta)	13.4mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	960pF @ 10V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TSM250NB06LDCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 6A/29A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V Power - Max: 2W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	Package: -	Stock14,394	-	60V	6A (Ta), 29A (Tc)	25mOhm @ 6A, 10V	2.5V @ 250µA	23nC @ 10V	1314pF @ 30V	2W (Ta), 48W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)