|
|
Infineon Technologies |
MOSFET 2P-CH 12V 4.3A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock7,024 |
|
Logic Level Gate | 12V | 4.3A | 40 mOhm @ 4.3A, 4.5V | 900mV @ 250µA | 18nC @ 4.5V | 1400pF @ 10V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 4CHIPLGA
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
- Power - Max: 500mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XLGA
- Supplier Device Package: 4-Chip LGA
|
Package: 4-XLGA |
Stock2,688 |
|
Standard | - | - | - | 1.2V @ 200µA | - | 780pF @ 10V | 500mW | 150°C (TJ) | Surface Mount | 4-XLGA | 4-Chip LGA |
|
|
Vishay Siliconix |
MOSFET 2P-CH 12V 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock36,000 |
|
Logic Level Gate | 12V | - | 34 mOhm @ 4.6A, 4.5V | 450mV @ 250µA (Min) | 40nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Vishay Siliconix |
MOSFET 2N-CH 20V 4A 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock15,504 |
|
Logic Level Gate | 20V | 4A | 30 mOhm @ 4.5A, 4.5V | 1.4V @ 250µA | 20nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Vishay Siliconix |
MOSFET 2P-CH 12V 2.3A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock73,212 |
|
Logic Level Gate | 12V | 2.3A | 80 mOhm @ 2.5A, 4.5V | 800mV @ 250µA | 10nC @ 4.5V | - | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 5.3A 8-SOIC
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W, 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,480 |
|
Logic Level Gate | 30V | 5.3A, 7.7A | 22 mOhm @ 6.3A, 10V | 2V @ 250µA | 12nC @ 5V | - | 1W, 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 0.25A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 250mA
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
- Power - Max: 272mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock478,044 |
|
Standard | 30V | 250mA | 1.5 Ohm @ 10mA, 4V | 1.5V @ 100µA | 1.3nC @ 5V | 33pF @ 5V | 272mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
ON Semiconductor |
MOSFET 2N-CH 20V 6.2A 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.2A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
- Power - Max: 1.39W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock6,656 |
|
Logic Level Gate | 20V | 6.2A | 22 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 630pF @ 16V | 1.39W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 30V 7A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock148,740 |
|
Logic Level Gate | 30V | 7A | 23 mOhm @ 7A, 10V | 3V @ 250µA | 21nC @ 5V | 1233pF @ 15V | 2W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Texas Instruments |
MOSFET ARRAY 2N-CH 40A 22VSON
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V
- Power - Max: 12W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 22-PowerTFDFN
- Supplier Device Package: 22-VSON-CLIP (5x6)
|
Package: 22-PowerTFDFN |
Stock7,344 |
|
Standard | 40V | - | 0.95 mOhm @ 30A, 10V | 2.3V @ 250µA | 88nC @ 4.5V | 12400pF @ 20V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 22-PowerTFDFN | 22-VSON-CLIP (5x6) |
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 4.9A 1212-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
|
Package: PowerPAK? 1212-8 Dual |
Stock66,396 |
|
Logic Level Gate | 30V | 4.9A | 36 mOhm @ 6.8A, 10V | 1.6V @ 250µA | 11nC @ 4.5V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual |
|
|
Diodes Incorporated |
MOSFET BVDSS: 41V 60V SO-8
- FET Type: 2 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,888 |
|
Standard | - | 5.2A (Ta) | 48 mOhm @ 5A, 10V | 3V @ 250µA | 14.5nC @ 4.5V | 1525pF @ 30V | - | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Diodes Incorporated |
MOSFET BVDSS: 8V 24V U-DFN2020-6
- FET Type: 2 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
- Power - Max: 1.54W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
|
Package: 6-UDFN Exposed Pad |
Stock3,296 |
|
Standard | 20V | 4.5A (Ta) | 50 mOhm @ 2A, 4.5V | 1V @ 250µA | 9.1nC @ 4.5V | 752pF @ 15V | 1.54W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 17A/31A TISON8
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A, 31A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
|
Package: 8-PowerTDFN |
Stock42,804 |
|
Logic Level Gate, 4.5V Drive | 30V | 17A, 31A | 5 mOhm @ 20A, 10V | 2V @ 250µA | 8.9nC @ 4.5V | 1025pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
|
|
ON Semiconductor |
MOSFET N/P-CH 60V ECH8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-ECH
|
Package: 8-SMD, Flat Lead |
Stock29,532 |
|
Logic Level Gate, 4V Drive | 60V | 4.7A, 3.5A | 55 mOhm @ 2A, 10V | - | 18nC @ 10V | 955pF @ 20V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
|
|
Diodes Incorporated |
MOSFET 2P-CH 20V 0.53A SOT-563
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 530mA
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
- Power - Max: 400mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock733,524 |
|
Logic Level Gate | 20V | 530mA | 900 mOhm @ 430mA, 4.5V | 1V @ 250µA | - | 175pF @ 16V | 400mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Fairchild/ON Semiconductor |
MOSFET N/P-CH 40V 9A/6.5A DPAK
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-4L
|
Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock292,224 |
|
Logic Level Gate | 40V | 9A, 6.5A | 24 mOhm @ 9A, 10V | 3V @ 250µA | 20nC @ 10V | 1000pF @ 20V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
|
|
Diodes Incorporated |
MOSFET 2N-CH 20V 4.6A TSOT26
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
|
Package: - |
Request a Quote |
|
- | 20V | 4.6A (Ta) | 35mOhm @ 5A, 4.5V | 1V @ 250µA | 3.6nC @ 4.5V | 369pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
|
|
Nexperia USA Inc. |
MOSFET 100V 13A LFPAK56D
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
- Power - Max: 38W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
|
Package: - |
Request a Quote |
|
- | 100V | 13A (Ta) | 82.5mOhm @ 5A, 10V | 4V @ 1mA | 13.6nC @ 10V | 811pF @ 25V | 38W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
|
|
onsemi |
MOSFET N/P-CH 20V 0.63A SC88
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA
- Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
- Power - Max: 270mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
|
Package: - |
Request a Quote |
|
Logic Level Gate | 20V | 630mA, 820mA | 375mOhm @ 630mA, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 46pF @ 20V | 270mW | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
onsemi |
MOSFET N/P-CH 30V 6A/5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 5A
- Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
- Power - Max: 1.8W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Request a Quote |
|
Logic Level Gate | 30V | 6A, 5A | 33mOhm @ 6A, 10V | - | 16nC @ 10V | 850pF @ 10V | 1.8W | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP |
|
|
Microchip Technology |
SIC 4N-CH 1200V 150A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 560W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | 1200V (1.2kV) | 150A | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | 560W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
|
|
Diodes Incorporated |
MOSFET 2N-CH 30V 0.8A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
- Power - Max: 290mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: - |
Stock59,580 |
|
- | 30V | 800mA (Ta) | 400mOhm @ 590mA, 10V | 1.6V @ 250µA | 1.2nC @ 10V | 50pF @ 15V | 290mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
|
EPC |
GANFET 2N-CH 30V 16A DIE
- FET Type: GaNFET (Gallium Nitride)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Stock59,616 |
|
- | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
onsemi |
MOSFET 2N-CH 60V 5.5A 6WDFNW
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Power - Max: 2.2W (Ta), 24W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WDFNW (2.2x2.3)
|
Package: - |
Request a Quote |
|
- | 60V | 5.5A (Ta), 18A (Tc) | 38mOhm @ 5A, 10V | 2V @ 13µA | 6nC @ 10V | 340pF @ 25V | 2.2W (Ta), 24W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 6-WDFN Exposed Pad | 6-WDFNW (2.2x2.3) |
|
|
onsemi |
MOSFET 2N-CH 25V 0.5A SC88
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Power - Max: 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88 (SC-70-6)
|
Package: - |
Request a Quote |
|
Logic Level Gate | 25V | 500mA (Ta) | 450mOhm @ 500mA, 4.5V | 1.5V @ 250µA | 2.3nC @ 4.5V | 50pF @ 10V | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 (SC-70-6) |
|
|
Vishay Siliconix |
MOSFET 2N-CH 40V 100A PPAK8X8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
- Power - Max: 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 8 x 8 Dual
- Supplier Device Package: PowerPAK® 8 x 8 Dual
|
Package: - |
Request a Quote |
|
- | 40V | 100A (Tc) | 2.3mOhm @ 5A, 10V | 2.5V @ 250µA | 45nC @ 10V | 7300pF @ 25V | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | PowerPAK® 8 x 8 Dual |
|
|
onsemi |
SILICON CARBIDE (SIC) MODULE EL
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
- Vgs(th) (Max) @ Id: 4.4V @ 120mA
- Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
- Power - Max: 1.1kW (Tj)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 36-PIM (56.7x62.8)
|
Package: - |
Request a Quote |
|
- | 1200V (1.2kV) | 338A (Tj) | 5.5mOhm @ 200A, 18V | 4.4V @ 120mA | 876nC @ 20V | 16410pF @ 800V | 1.1kW (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 36-PIM (56.7x62.8) |