Page 194 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

QJD1210SA1
Powerex Inc.

MOSFET 2N-CH 1200V 100A SIC

Package: Module

Stock4,992
AO6801A
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 2.3A 6TSOP

Package: SC-74, SOT-457

Stock454,248
SI6966DQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock390,384
SI4230DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,536
FDW9926A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 4.5A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock513,732
NTJD4401NT1
ON Semiconductor

MOSFET 2N-CH 20V 0.63A SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock15,828
NTL4502NT1
ON Semiconductor

MOSFET 4N-CH 24V 11.4A 16PIN

Package: 16-PowerQFN

Stock7,664
NDS9947
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock205,848
APTC60AM35T1G
Microsemi Corporation

MOSFET 2N-CH 600V 72A SP1

Package: SP1

Stock2,832
BUK7K134-100EX
Nexperia USA Inc.

MOSFET 2N-CH 100V 9.8A LFPAK56

Package: SOT-1205, 8-LFPAK56

Stock3,568
FDMS3606AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/27A PWR56

Package: 8-PowerTDFN

Stock6,224
DMC25D1UVT-7
Diodes Incorporated

MOSFET N/P-CH 25V/12V TSOT26

Package: SOT-23-6 Thin, TSOT-23-6

Stock6,704
DMC3025LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 6.5A/4.2A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock218,472
FDY4000CZ
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SC89-6

Package: SOT-563, SOT-666

Stock6,560
DI048N04PQ2-AQ
Diotec Semiconductor

MOSFET, POWERQFN 5X6, 40V, 48A,

Package: -

Stock15,000
CSD86336Q3DT
Texas Instruments

MOSFET 2N-CH 25V 20A 8VSON

Package: -

Stock3
IQE220N15NM5CGSCATMA1
Infineon Technologies

TRENCH >=100V

Package: -

Request a Quote
DMP31D7LVQ-7
Diodes Incorporated

MOSFET 2P-CH 30V 0.62A SOT563

Package: -

Stock8,220
SI5980DU-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 2.5A CHIPFET

Package: -

Request a Quote
SQJ910AEP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

Package: -

Stock8,910

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
QJD1210SA1	Powerex Inc.	MOSFET 2N-CH 1200V 100A SIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 1.6V @ 34mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 10V Power - Max: 520W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: Module	Stock4,992	Standard	1200V (1.2kV)	100A	17 mOhm @ 100A, 15V	1.6V @ 34mA	330nC @ 15V	8200pF @ 10V	520W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
AO6801A	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 2.3A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	Package: SC-74, SOT-457	Stock454,248	Logic Level Gate	30V	2.3A	115 mOhm @ 2.3A, 10V	1.4V @ 250µA	7nC @ 10V	315pF @ 15V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI6966DQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock390,384	Logic Level Gate	20V	4A	30 mOhm @ 4.5A, 4.5V	1.4V @ 250µA	20nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4230DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 3.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,536	Logic Level Gate	30V	8A	20.5 mOhm @ 8A, 10V	3V @ 250µA	25nC @ 10V	950pF @ 15V	3.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDW9926A	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 4.5A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock513,732	Logic Level Gate	20V	4.5A	32 mOhm @ 4.5A, 4.5V	1.5V @ 250µA	9nC @ 4.5V	630pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTJD4401NT1	ON Semiconductor	MOSFET 2N-CH 20V 0.63A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock15,828	Logic Level Gate	20V	630mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NTL4502NT1	ON Semiconductor	MOSFET 4N-CH 24V 11.4A 16PIN FET Type: 4 N-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11.4A Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 20V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-PowerQFN Supplier Device Package: PlnPAK	Package: 16-PowerQFN	Stock7,664	Logic Level Gate	24V	11.4A	11 mOhm @ 15A, 10V	2V @ 250µA	13nC @ 4.5V	1605pF @ 20V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	16-PowerQFN	PlnPAK
NDS9947	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock205,848	Logic Level Gate	20V	3.5A	100 mOhm @ 3.5A, 10V	3V @ 250µA	13nC @ 10V	542pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60AM35T1G	Microsemi Corporation	MOSFET 2N-CH 600V 72A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 416W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock2,832	Standard	600V	72A	35 mOhm @ 72A, 10V	3.9V @ 5.4mA	518nC @ 10V	14000pF @ 25V	416W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
BUK7K134-100EX	Nexperia USA Inc.	MOSFET 2N-CH 100V 9.8A LFPAK56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.8A Rds On (Max) @ Id, Vgs: 121 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V Power - Max: 32W Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: SOT-1205, 8-LFPAK56	Stock3,568	Standard	100V	9.8A	121 mOhm @ 5A, 10V	4V @ 1mA	10.5nC @ 10V	564pF @ 25V	32W	-	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
FDMS3606AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/27A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 27A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	Package: 8-PowerTDFN	Stock6,224	Logic Level Gate	30V	13A, 27A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1695pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
DMC25D1UVT-7	Diodes Incorporated	MOSFET N/P-CH 25V/12V TSOT26 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 25V, 12V Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: SOT-23-6 Thin, TSOT-23-6	Stock6,704	Standard	25V, 12V	500mA, 3.9A	4 Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.9nC @ 10V	27.6pF @ 10V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC3025LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 6.5A/4.2A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock218,472	Logic Level Gate	30V	6.5A, 4.2A	20 mOhm @ 7.4A, 10V	2V @ 250µA	9.8nC @ 10V	501pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDY4000CZ	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V SC89-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 350mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Package: SOT-563, SOT-666	Stock6,560	Logic Level Gate	20V	600mA, 350mA	700 mOhm @ 600mA, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
DI048N04PQ2-AQ	Diotec Semiconductor	MOSFET, POWERQFN 5X6, 40V, 48A, FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: TDSON-8-4	Package: -	Stock15,000	-	40V	48A (Tc)	9.6mOhm @ 12A, 10V	2.5V @ 250µA	48nC @ 10V	2270pF @ 20V	27W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	TDSON-8-4
CSD86336Q3DT	Texas Instruments	MOSFET 2N-CH 25V 20A 8VSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Power - Max: 6W Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	Package: -	Stock3	Logic Level Gate, 5V Drive	25V	20A (Ta)	9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V	1.9V @ 250µA, 1.6V @ 250µA	3.8nC @ 45V, 7.4nC @ 45V	494pF @ 12.5V, 970pF @ 12.5V	6W	-55°C ~ 125°C	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
IQE220N15NM5CGSCATMA1	Infineon Technologies	TRENCH >=100V FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Supplier Device Package: PG-WHTFN-9	Package: -	Request a Quote	-	150V	-	-	-	-	-	-	-	Surface Mount	9-PowerWDFN	PG-WHTFN-9
DMP31D7LVQ-7	Diodes Incorporated	MOSFET 2P-CH 30V 0.62A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock8,220	-	30V	620mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	0.8nC @ 10V	19pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SI5980DU-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 2.5A CHIPFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 567mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 50V Power - Max: 7.8W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® ChipFET™ Dual Supplier Device Package: PowerPAK® ChipFet Dual	Package: -	Request a Quote	-	100V	2.5A	567mOhm @ 400mA, 10V	4V @ 250µA	3.3nC @ 10V	78pF @ 50V	7.8W	-	Surface Mount	PowerPAK® ChipFET™ Dual	PowerPAK® ChipFet Dual
SQJ910AEP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock8,910	-	30V	30A (Tc)	7mOhm @ 12A, 10V	2.5V @ 250µA	39nC @ 10V	1869pF @ 15V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
PJQ5844-AU_R2_000A1	Panjit International Inc.	MOSFET 2N-CH 40V 10A/45A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Power - Max: 2W (Ta), 38.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	Package: -	Request a Quote	-	40V	10A (Ta), 45A (Tc)	8mOhm @ 15A, 10V	2.5V @ 250µA	17nC @ 4.5V	1759pF @ 25V	2W (Ta), 38.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
SQJ844AEP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock9,000	-	30V	8A (Tc)	16.6mOhm @ 7.6A, 10V	2.5V @ 250µA	26nC @ 10V	1161pF @ 15V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ914EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 30V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock9,000	-	30V	30A (Tc)	12mOhm @ 4.5A, 10V	2.5V @ 250µA	25nC @ 10V	1110pF @ 15V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
RF1K4909396	Fairchild Semiconductor	MOSFET 2P-CH 12V 2.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	12V	2.5A (Ta)	130mOhm @ 2.5A, 5V	2V @ 250µA	24nC @ 10V	775pF @ 10V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AOCA33104E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 30A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (2.98x1.49)	Package: -	Request a Quote	-	12V	30A (Ta)	2.8mOhm @ 5A, 4.5V	1.2V @ 250µA	36nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	10-AlphaDFN (2.98x1.49)
EPC2221	EPC	GANFET 2N-CH 100V 5A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Stock15,519	-	100V	5A	-	-	-	-	-	150°C (TJ)	Surface Mount	Die	Die
DMN52D0UVA-13	Diodes Incorporated	MOSFET 2N-CH 50V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Power - Max: 480mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock30,000	-	50V	480mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	39pF @ 25V	480mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MSCSM170HM12CAG	Microchip Technology	SIC 4N-CH 1700V 179A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Power - Max: 843W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock39	-	1700V (1.7kV)	179A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	843W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-