Page 195 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRFH4255DTRPBF
Infineon Technologies

MOSFET 2N-CH 25V 64A/105A PQFN

Package: 8-PowerVDFN

Stock5,472
BSO200N03
Infineon Technologies

MOSFET 2N-CH 30V 6.6A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock636,780
BSO150N03
Infineon Technologies

MOSFET 2N-CH 30V 7.6A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock667,368
BSO612CV
Infineon Technologies

MOSFET N/P-CH 60V 3A/2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,640
AO7600_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock3,904
ECH8602M-TL-H
ON Semiconductor

MOSFET 2N-CH 30V 6A ECH8

Package: 8-SMD, Flat Lead

Stock1,008,000
FD6M043N08
Fairchild/ON Semiconductor

MOSFET 2N-CH 75V 65A EPM15

Package: EPM15

Stock7,824
2N7002V-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

Package: SOT-563, SOT-666

Stock36,000
NDS8947
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock92,136
IPG16N10S4L61AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock3,104
NVMFD5489NLT3G
ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

Package: 8-PowerTDFN

Stock2,992
BUK9K5R1-30EX
Nexperia USA Inc.

MOSFET 2N-CH 30V 40A 56LFPAK

Package: SOT-1205, 8-LFPAK56

Stock7,904
ALD110814PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

Package: 16-DIP (0.300", 7.62mm)

Stock6,624
SIA537EDJ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 12V/20V SC-70-6L

Package: PowerPAK? SC-70-6 Dual

Stock5,760
BSS138BKS,115
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock248,130
FDS3890
Fairchild/ON Semiconductor

MOSFET 2N-CH 80V 4.7A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock243,708
HP8KC7TB1
Rohm Semiconductor

60V 24A, DUAL NCH+NCH, HSOP8, PO

Package: -

Stock7,410
DMN33D9LV-13A
Diodes Incorporated

MOSFET 2N-CH 30V 0.35A SOT563

Package: -

Request a Quote
PJS6835_S2_00001
Panjit International Inc.

MOSFET 2P-CH 20V 0.5A SOT23-6

Package: -

Request a Quote
SI7844DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRFH4255DTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 64A/105A PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 105A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Power - Max: 31W, 38W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6)	Package: 8-PowerVDFN	Stock5,472	Logic Level Gate	25V	64A, 105A	3.2 mOhm @ 30A, 10V	2.1V @ 35µA	15nC @ 4.5V	1314pF @ 13V	31W, 38W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)
BSO200N03	Infineon Technologies	MOSFET 2N-CH 30V 6.6A 8DSO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.9A, 10V Vgs(th) (Max) @ Id: 2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	Package: 8-SOIC (0.154", 3.90mm Width)	Stock636,780	Logic Level Gate	30V	6.6A	20 mOhm @ 7.9A, 10V	2V @ 13µA	8nC @ 5V	1010pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO150N03	Infineon Technologies	MOSFET 2N-CH 30V 7.6A 8DSO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	Package: 8-SOIC (0.154", 3.90mm Width)	Stock667,368	Standard	30V	7.6A	15 mOhm @ 9.1A, 10V	2V @ 25µA	15nC @ 5V	1890pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO612CV	Infineon Technologies	MOSFET N/P-CH 60V 3A/2A 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,640	Standard	60V	3A, 2A	120 mOhm @ 3A, 10V	4V @ 20µA	15.5nC @ 10V	340pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	P-DSO-8
AO7600_001	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH SC70-6 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock3,904	Standard	20V	900mA	300 mOhm @ 900mA, 4.5V	900mV @ 250µA	1.9nC @ 4.5V	120pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
ECH8602M-TL-H	ON Semiconductor	MOSFET 2N-CH 30V 6A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	Package: 8-SMD, Flat Lead	Stock1,008,000	Logic Level Gate	30V	6A	30 mOhm @ 3A, 4.5V	-	7.5nC @ 4.5V	-	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
FD6M043N08	Fairchild/ON Semiconductor	MOSFET 2N-CH 75V 65A EPM15 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: EPM15 Supplier Device Package: EPM15	Package: EPM15	Stock7,824	Standard	75V	65A	4.3 mOhm @ 40A, 10V	4V @ 250µA	148nC @ 10V	6180pF @ 25V	-	-40°C ~ 150°C (TJ)	Through Hole	EPM15	EPM15
2N7002V-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock36,000	Standard	60V	280mA	7.5 Ohm @ 50mA, 5V	2.5V @ 250µA	-	50pF @ 25V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NDS8947	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock92,136	Logic Level Gate	30V	4A	65 mOhm @ 4A, 10V	2.8V @ 250µA	30nC @ 10V	690pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IPG16N10S4L61AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.1V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V Power - Max: 29W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	Package: 8-PowerVDFN	Stock3,104	Logic Level Gate	100V	16A	61 mOhm @ 16A, 10V	2.1V @ 90µA	11nC @ 10V	845pF @ 25V	29W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
NVMFD5489NLT3G	ON Semiconductor	MOSFET 2N-CH 60V 4.5A DFN8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	Package: 8-PowerTDFN	Stock2,992	Logic Level Gate	60V	4.5A	65 mOhm @ 15A, 10V	2.5V @ 250µA	12.4nC @ 10V	330pF @ 25V	3W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
BUK9K5R1-30EX	Nexperia USA Inc.	MOSFET 2N-CH 30V 40A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Power - Max: 68W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: SOT-1205, 8-LFPAK56	Stock7,904	Logic Level Gate	30V	40A	5.3 mOhm @ 10A, 5V	2.1V @ 1mA	26.7nC @ 5V	3065pF @ 25V	68W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
ALD110814PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	Package: 16-DIP (0.300", 7.62mm)	Stock6,624	Standard	10.6V	12mA, 3mA	500 Ohm @ 5.4V	1.42V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SIA537EDJ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 12V/20V SC-70-6L FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock5,760	Logic Level Gate	12V, 20V	4.5A	28 mOhm @ 5.2A, 4.5V	1V @ 250µA	16nC @ 8V	455pF @ 6V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
BSS138BKS,115	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.32A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 320mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V Power - Max: 445mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock248,130	Logic Level Gate	60V	320mA	1.6 Ohm @ 320mA, 10V	1.6V @ 250µA	0.7nC @ 4.5V	56pF @ 10V	445mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
FDS3890	Fairchild/ON Semiconductor	MOSFET 2N-CH 80V 4.7A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 44 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 40V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock243,708	Logic Level Gate	80V	4.7A	44 mOhm @ 4.7A, 10V	4V @ 250µA	35nC @ 10V	1180pF @ 40V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
HP8KC7TB1	Rohm Semiconductor	60V 24A, DUAL NCH+NCH, HSOP8, PO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Power - Max: 3W (Ta), 26W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	Package: -	Stock7,410	-	60V	13.5A (Ta), 24A (Tc)	11.5mOhm @ 13.5A, 10V	2.5V @ 1mA	22nC @ 10V	1400pF @ 30V	3W (Ta), 26W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
DMN33D9LV-13A	Diodes Incorporated	MOSFET 2N-CH 30V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	30V	350mA (Ta)	2.4Ohm @ 250mA, 10V	1.4V @ 100µA	1.23nC @ 10V	48pF @ 5V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
PJS6835_S2_00001	Panjit International Inc.	MOSFET 2P-CH 20V 0.5A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	Package: -	Request a Quote	Logic Level Gate, 1.2V Drive	20V	500mA (Ta)	1.2Ohm @ 500mA, 4.5V	1V @ 250µA	1.4nC @ 4.5V	38pF @ 10V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
SI7844DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.4A PPAK SO-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Request a Quote	Logic Level Gate	30V	6.4A	22mOhm @ 10A, 10V	2.4V @ 250µA	20nC @ 10V	-	1.4W	-	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
ZXMD65P03N8TA	Diodes Incorporated	MOSFET 2P-CH 30V 3.8A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 55mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	-	30V	3.8A	55mOhm @ 4.9A, 10V	1V @ 250µA	25.7nC @ 10V	930pF @ 25V	1.25W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
QH8JC5TCR	Rohm Semiconductor	MOSFET 2P-CH 60V 3.5A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	Package: -	Stock14,064	-	60V	3.5A (Ta)	91mOhm @ 3.5A, 10V	2.5V @ 1mA	17.3nC @ 10V	850pF @ 30V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
G100C04D52	Goford Semiconductor	MOSFET 40V 40A/24A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 24A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2213pF @ 20V, 2451pF @ 20V Power - Max: 65W (Tc), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (4.9x5.75)	Package: -	Request a Quote	-	40V	40A (Tc), 24A (Tc)	9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V	2.5V @ 250µA	29nC @ 10V, 45nC @ 10V	2213pF @ 20V, 2451pF @ 20V	65W (Tc), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (4.9x5.75)
EMH2402-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMG6302UDW-7	Diodes Incorporated	MOSFET 2P-CH 25V 0.15A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V Power - Max: 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	-	25V	150mA (Ta)	10Ohm @ 140mA, 4.5V	1.5V @ 250µA	0.34nC @ 4.5V	30.7pF @ 10V	310mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SFS9630YDTU	Fairchild Semiconductor	MOSFET P-CH 200V 4.4A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTC120WX75GD-SMD	IXYS	MOSFET 6N-CH 75V 180A ISOPLUS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL™ Supplier Device Package: ISOPLUS-DIL™	Package: -	Request a Quote	-	75V	180A (Tc)	3.1mOhm @ 100A, 10V	4V @ 1mA	178nC @ 10V	10500pF @ 25V	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL™	ISOPLUS-DIL™
MSCMC90AM12C3AG	Microchip Technology	SIC 900V 110A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	Package: -	Request a Quote	-	900V	110A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	SP3F