Page 196 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

JANTXV2N7334
Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

Package: 14-DIP (0.300", 7.62mm)

Stock2,848
FDD8426H
Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 12A/10A DPAK

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock120,012
NTHD2102PT1G
ON Semiconductor

MOSFET 2P-CH 8V 3.4A CHIPFET

Package: 8-SMD, Flat Lead

Stock1,996,464
SI3585DV-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 2A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock584,652
ZXMC4A16DN8TC
Diodes Incorporated

MOSFET N/P-CH 40V 4A/3.6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock447,012
BSC0924NDIATMA1
Infineon Technologies

MOSFET 2N-CH 30V 17A/32A TISON8

Package: 8-PowerTDFN

Stock7,456
FMM22-05PF
IXYS

MOSFET 2N-CH 500V 13A I4-PAC

Package: i4-Pac?-5

Stock3,264
AO4822A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock230,616
EMH2604-TL-H
ON Semiconductor

MOSFET N/P-CH 20V 4A/3A EMH8

Package: 8-SMD, Flat Lead

Stock7,296
IRF7306TRPBF
Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock265,440
FDZ1416NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 4-WLCSP

Package: 4-XFBGA, WLCSP

Stock7,248
IRF7380TRPBF
Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock73,572
DMC4040SSD-13
Diodes Incorporated

MOSFET N/P-CH 40V 6.8A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock200,136
UPA2450BTL-E1-A
Renesas Electronics Corporation

MOSFET 2N-CH 20V 8.6A 6HWSON

Package: -

Request a Quote
DMP31D7LV-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT563 T&R

Package: -

Request a Quote
FDMS001N025DSD
onsemi

MOSFET 2N-CH 25V 19A 8PQFN

Package: -

Request a Quote
NTTFS5C478NLTAG
onsemi

MOSFET 40V U8FL

Package: -

Request a Quote
SI3439KDWA-TP
Micro Commercial Co

MOSFET N/P-CH 20V 0.75A SOT363

Package: -

Stock135,483
AONY36352
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 18.5A/49A 8DFN

Package: -

Stock45,120
SSM6L820R-LXHF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

Package: -

Stock44,349

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JANTXV2N7334	Microsemi Corporation	MOSFET 4N-CH 100V 1A MO-036AB FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	Package: 14-DIP (0.300", 7.62mm)	Stock2,848	Standard	100V	1A	700 mOhm @ 600mA, 10V	4V @ 250µA	60nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
FDD8426H	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 12A/10A DPAK FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A, 10A Rds On (Max) @ Id, Vgs: 12 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock120,012	Logic Level Gate	40V	12A, 10A	12 mOhm @ 12A, 10V	3V @ 250µA	53nC @ 10V	2735pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
NTHD2102PT1G	ON Semiconductor	MOSFET 2P-CH 8V 3.4A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	Package: 8-SMD, Flat Lead	Stock1,996,464	Logic Level Gate	8V	3.4A	58 mOhm @ 3.4A, 4.5V	1.5V @ 250µA	16nC @ 2.5V	715pF @ 6.4V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
SI3585DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 2A 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock584,652	Logic Level Gate	20V	2A, 1.5A	125 mOhm @ 2.4A, 4.5V	600mV @ 250µA (Min)	3.2nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
ZXMC4A16DN8TC	Diodes Incorporated	MOSFET N/P-CH 40V 4A/3.6A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250mA (Min) Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 40V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock447,012	Logic Level Gate	40V	4A, 3.6A	50 mOhm @ 4.5A, 10V	1V @ 250mA (Min)	17nC @ 10V	770pF @ 40V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSC0924NDIATMA1	Infineon Technologies	MOSFET 2N-CH 30V 17A/32A TISON8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	Package: 8-PowerTDFN	Stock7,456	Logic Level Gate, 4.5V Drive	30V	17A, 32A	5 mOhm @ 20A, 10V	2V @ 250µA	10nC @ 4.5V	1160pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
FMM22-05PF	IXYS	MOSFET 2N-CH 500V 13A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V Power - Max: 132W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5	Stock3,264	Standard	500V	13A	270 mOhm @ 11A, 10V	5V @ 1mA	50nC @ 10V	2630pF @ 25V	132W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
AO4822A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock230,616	Logic Level Gate	30V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
EMH2604-TL-H	ON Semiconductor	MOSFET N/P-CH 20V 4A/3A EMH8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V Power - Max: 1.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	Package: 8-SMD, Flat Lead	Stock7,296	Logic Level Gate	20V	4A, 3A	45 mOhm @ 4A, 4.5V	-	4.7nC @ 4.5V	345pF @ 10V	1.2W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-EMH
IRF7306TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 3.6A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock265,440	Logic Level Gate	30V	3.6A	100 mOhm @ 1.8A, 10V	1V @ 250µA	25nC @ 10V	440pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDZ1416NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 4-WLCSP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WLCSP (1.4x1.6)	Package: 4-XFBGA, WLCSP	Stock7,248	Standard	-	-	-	1.3V @ 250µA	17nC @ 4.5V	-	500mW	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, WLCSP	4-WLCSP (1.4x1.6)
IRF7380TRPBF	Infineon Technologies	MOSFET 2N-CH 80V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock73,572	Logic Level Gate	80V	3.6A	73 mOhm @ 2.2A, 10V	4V @ 250µA	23nC @ 10V	660pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC4040SSD-13	Diodes Incorporated	MOSFET N/P-CH 40V 6.8A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.8A Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock200,136	Logic Level Gate	40V	6.8A	25 mOhm @ 3A, 10V	1.8V @ 250µA	37.6nC @ 10V	1790pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UPA2450BTL-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 20V 8.6A 6HWSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.6A Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 700mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: 6-HWSON	Package: -	Request a Quote	Logic Level Gate	20V	8.6A	17.5mOhm @ 4A, 4.5V	1.5V @ 1mA	8nC @ 4V	520pF @ 10V	700mW	-	Surface Mount	6-VFDFN Exposed Pad	6-HWSON
DMP31D7LV-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	30V	620mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	0.8nC @ 10V	19pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDMS001N025DSD	onsemi	MOSFET 2N-CH 25V 19A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	Package: -	Request a Quote	-	25V	19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)	3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V	2.5V @ 320µA, 3V @ 1mA	30nC @ 10V, 104nC @ 10V	1370pF @ 13V, 5105pF @ 13V	2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
NTTFS5C478NLTAG	onsemi	MOSFET 40V U8FL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SI3439KDWA-TP	Micro Commercial Co	MOSFET N/P-CH 20V 0.75A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock135,483	Logic Level Gate	20V	750mA, 600mA	300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V	1.1V @ 250µA	0.8nC @ 4.5V, 0.86nC @ 4.5V	33pF @ 16V, 40pF @ 16V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
AONY36352	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 18.5A/49A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (5x6)	Package: -	Stock45,120	-	30V	18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)	5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V	2.1V @ 250µA, 1.9V @ 250µA	20nC @ 10V, 52nC @ 10V	820pF @ 15V, 2555pF @ 15V	3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (5x6)
SSM6L820R-LXHF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V/20V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	Package: -	Stock44,349	-	30V, 20V	4A (Ta)	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V	1V @ 1mA, 1.2V @ 1mA	3.2nC @ 4.5V, 6.7nC @4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
G2K2P10S2E	Goford Semiconductor	MOSFET 2P-CH 100V 3.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V Power - Max: 3.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock11,349	-	100V	3.5A (Tc)	200mOhm @ 3A, 10V	2.5V @ 250µA	23nC @ 10V	1623pF @ 50V	3.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SQJB44EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock8,622	-	40V	30A (Tc)	5.2mOhm @ 8A, 10V	2.2V @ 250µA	50nC @ 10V	3075pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
DMN22M5UCA10-7	Diodes Incorporated	MOSFET 2N-CH 24V X4-DSN3221-10 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 12V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: X4-DSN3221-10	Package: -	Request a Quote	-	24V	16.5A (Ta)	4mOhm @ 5A, 4.5V	1.3V @ 1mA	40.7nC @ 4.5V	3490pF @ 12V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	X4-DSN3221-10
DMN62D2UVQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500µW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	60V	450mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500µW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3032LFDBWQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 5.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (SWP) Type B	Package: -	Request a Quote	-	30V	5.5A (Ta)	30mOhm @ 5.8A, 10V	2V @ 250µA	10.6nC @ 10V	500pF @ 15V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (SWP) Type B
PSMN014-40HLDX	Nexperia USA Inc.	MOSFET 2N-CH 40V 42A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power - Max: 46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: -	Stock213	Logic Level Gate	40V	42A (Ta)	13.6mOhm @ 10A, 10V	2.2V @ 1mA	19.4nC @ 10V	1160pF @ 25V	46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
DMTH8030LPDW-13	Diodes Incorporated	MOSFET 2N-CH 80V 28.5A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V Power - Max: 3.1W (Ta), 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	Package: -	Request a Quote	-	80V	28.5A (Tc)	26mOhm @ 10A, 10V	2.5V @ 250µA	10.4nC @ 10V	631pF @ 40V	3.1W (Ta), 41W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
SI4920DY	Fairchild Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	30V	6A (Ta)	28mOhm @ 6A, 10V	3V @ 250µA	13nC @ 5V	830pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC