Page 1086 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

64-4123PBF
Infineon Technologies

MOSFET N-CH 100V DPAK

Package: -

Stock4,672
IPP120N04S402AKSA1
Infineon Technologies

MOSFET N-CH 40V 120A TO220-3-1

Package: TO-220-3

Stock4,480
IRFZ44EL
Infineon Technologies

MOSFET N-CH 60V 48A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,376
IRL1104S
Infineon Technologies

MOSFET N-CH 40V 104A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,736
SIE862DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A POLARPAK

Package: 10-PolarPAK? (U)

Stock36,000
IRL510L
Vishay Siliconix

MOSFET N-CH 100V 5.6A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock13,776
IRFP440
Vishay Siliconix

MOSFET N-CH 500V 8.8A TO-247AC

Package: TO-247-3

Stock43,380
IPD65R660CFDAATMA1
Infineon Technologies

MOSFET N-CH TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,280
SQD40N10-25_GE3
Vishay Siliconix

MOSFET N-CH 100V 40A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,912
IXKP10N60C5
IXYS

MOSFET N-CH 600V 10A TO220AB

Package: TO-220-3

Stock3,200
BFL4004-1E
ON Semiconductor

MOSFET N-CH 800V 4.3A

Package: TO-220-3 Full Pack

Stock5,840
AOD538
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 34A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,280
2SK2463T100
Rohm Semiconductor

MOSFET N-CH 60V 2A MPT3

Package: TO-243AA

Stock18,564
DMP3017SFV-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V POWERDI333

Package: 8-PowerVDFN

Stock6,672
TSM60NB190CZ C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-220-3

Stock4,128
NVTFS5C454NLWFTAG
ON Semiconductor

TRENCH 6 40V FET

Package: -

Stock7,552
TSM120N06LCR RLG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: 8-PowerTDFN

Stock5,744
FQPF33N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 18A TO-220F

Package: TO-220-3 Full Pack

Stock47,376
FDD5680
Fairchild/ON Semiconductor

MOSFET N-CH 60V 8.5A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock202,608
IRF7495PBF
Infineon Technologies

MOSFET N-CH 100V 7.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock32,718

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
64-4123PBF	Infineon Technologies	MOSFET N-CH 100V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,672	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP120N04S402AKSA1	Infineon Technologies	MOSFET N-CH 40V 120A TO220-3-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock4,480	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 110µA	134nC @ 10V	10740pF @ 25V	±20V	-	158W (Tc)	2.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRFZ44EL	Infineon Technologies	MOSFET N-CH 60V 48A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,376	MOSFET (Metal Oxide)	60V	48A (Tc)	10V	4V @ 250µA	60nC @ 10V	1360pF @ 25V	±20V	-	110W (Tc)	23 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRL1104S	Infineon Technologies	MOSFET N-CH 40V 104A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,736	MOSFET (Metal Oxide)	40V	104A (Tc)	4.5V, 10V	1V @ 250µA	68nC @ 4.5V	3445pF @ 25V	±16V	-	2.4W (Ta), 167W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIE862DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (U) Package / Case: 10-PolarPAK? (U)	Package: 10-PolarPAK? (U)	Stock36,000	MOSFET (Metal Oxide)	30V	50A (Tc)	10V	2.2V @ 250µA	75nC @ 10V	3100pF @ 15V	±20V	-	5.2W (Ta), 104W (Tc)	3.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (U)	10-PolarPAK? (U)
IRL510L	Vishay Siliconix	MOSFET N-CH 100V 5.6A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock13,776	MOSFET (Metal Oxide)	100V	5.6A (Tc)	4V, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	±10V	-	-	540 mOhm @ 3.4A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFP440	Vishay Siliconix	MOSFET N-CH 500V 8.8A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock43,380	MOSFET (Metal Oxide)	500V	8.8A (Tc)	10V	4V @ 250µA	63nC @ 10V	1300pF @ 25V	±20V	-	150W (Tc)	850 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPD65R660CFDAATMA1	Infineon Technologies	MOSFET N-CH TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 214.55µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 660 mOhm @ 3.22A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,280	MOSFET (Metal Oxide)	650V	6A (Tc)	10V	4.5V @ 214.55µA	20nC @ 10V	543pF @ 100V	±20V	-	62.5W (Tc)	660 mOhm @ 3.22A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SQD40N10-25_GE3	Vishay Siliconix	MOSFET N-CH 100V 40A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,912	MOSFET (Metal Oxide)	100V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	70nC @ 10V	3380pF @ 25V	±20V	-	136W (Tc)	25 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXKP10N60C5	IXYS	MOSFET N-CH 600V 10A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,200	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	3.5V @ 340µA	22nC @ 10V	790pF @ 100V	±20V	Super Junction	-	385 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BFL4004-1E	ON Semiconductor	MOSFET N-CH 800V 4.3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,840	MOSFET (Metal Oxide)	800V	4.3A (Tc)	10V	-	36nC @ 10V	710pF @ 30V	±30V	-	2W (Ta), 36W (Tc)	2.5 Ohm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3FS	TO-220-3 Full Pack
AOD538	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,280	MOSFET (Metal Oxide)	30V	34A (Ta), 70A (Tc)	4.5V, 10V	2.2V @ 250µA	42nC @ 10V	2160pF @ 15V	±20V	-	4.2W (Ta), 24W (Tc)	3.1 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
2SK2463T100	Rohm Semiconductor	MOSFET N-CH 60V 2A MPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 380 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT3 Package / Case: TO-243AA	Package: TO-243AA	Stock18,564	MOSFET (Metal Oxide)	60V	2A (Ta)	4V, 10V	2.5V @ 1mA	-	200pF @ 10V	±20V	-	500mW (Ta)	380 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	MPT3	TO-243AA
DMP3017SFV-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V POWERDI333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 31W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,672	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 10V	2246pF @ 15V	±25V	-	31W (Ta)	10 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
TSM60NB190CZ C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1273pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33.8W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,128	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	31nC @ 10V	1273pF @ 100V	±30V	-	33.8W (Tc)	190 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NVTFS5C454NLWFTAG	ON Semiconductor	TRENCH 6 40V FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,552	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM120N06LCR RLG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2116pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,744	MOSFET (Metal Oxide)	60V	54A (Tc)	4.5V, 10V	2.5V @ 250µA	36.5nC @ 10V	2116pF @ 30V	±20V	-	69W (Tc)	12 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
FQPF33N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 18A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock47,376	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 250µA	51nC @ 10V	1500pF @ 25V	±25V	-	41W (Tc)	52 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDD5680	Fairchild/ON Semiconductor	MOSFET N-CH 60V 8.5A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock202,608	MOSFET (Metal Oxide)	60V	8.5A (Ta)	6V, 10V	4V @ 250µA	46nC @ 10V	1835pF @ 30V	±20V	-	2.8W (Ta), 60W (Tc)	21 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7495PBF	Infineon Technologies	MOSFET N-CH 100V 7.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock32,718	MOSFET (Metal Oxide)	100V	7.3A (Ta)	10V	4V @ 250µA	51nC @ 10V	1530pF @ 25V	±20V	-	2.5W (Ta)	22 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7460DP-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock434,244	MOSFET (Metal Oxide)	60V	11A (Ta)	4.5V, 10V	3V @ 250µA	100nC @ 10V	-	±20V	-	1.9W (Ta)	9.6 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRFR014TRPBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock478,704	MOSFET (Metal Oxide)	60V	7.7A (Tc)	10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	200 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
ISZ0501NLSATMA1	Infineon Technologies	25V, N-CH MOSFET, LOGIC LEVEL, P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-25 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	40A (Tc)	4.5V, 10V	2V @ 250µA	13.6 nC @ 10 V	910 pF @ 12 V	±16V	-	30W (Tc)	3.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-25	8-PowerTDFN
IPB60R160C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 23.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock10,041	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	3.5V @ 750µA	75 nC @ 10 V	1660 pF @ 100 V	±20V	-	176W (Tc)	160mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
UF3SC120016K4S	Qorvo	SICFET N-CH 1200V 107A TO247-4 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock4,143	SiCFET (Cascode SiCJFET)	1200 V	107A (Tc)	12V	6V @ 10mA	218 nC @ 15 V	7824 pF @ 800 V	±20V	-	517W (Tc)	21mOhm @ 50A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
NVMFS4C308NWFT1G	onsemi	TRENCH 30V NCH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 30.6W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	17.2A (Ta), 55A (Tc)	4.5V, 10V	2.1V @ 250µA	18.2 nC @ 10 V	1670 pF @ 15 V	±20V	-	3W (Ta), 30.6W (Tc)	4.8mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
AO3409-ML	MOSLEADER	P -30V -2.6A SOT23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K35CT-L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 180MA CST3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	Package: -	Stock98,961	MOSFET (Metal Oxide)	20 V	180mA (Ta)	1.2V, 4V	1V @ 1mA	-	9.5 pF @ 3 V	±10V	-	100mW (Ta)	3Ohm @ 50mA, 4V	150°C	Surface Mount	CST3	SC-101, SOT-883