Page 1337 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6613TR1
Infineon Technologies

MOSFET N-CH 40V DIRECTFET-MT

Package: DirectFET? Isometric MT

Stock2,000
SPD30N06S2L-23
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock326,244
IRF9530NS
Infineon Technologies

MOSFET P-CH 100V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,712
FCD5N60TF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,344
IRF830ASTRL
Vishay Siliconix

MOSFET N-CH 500V 5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,064
STB6NM60N
STMicroelectronics

MOSFET N-CH 600V 4.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,392
SIPC46N60CFDX1SA1
Infineon Technologies

TRANSISTOR N-CH

Package: -

Stock4,288
SI7230DN-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 9A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock1,843,956
PSMN012-80PS,127
Nexperia USA Inc.

MOSFET N-CH 80V 74A TO220AB

Package: TO-220-3

Stock7,392
TSM70N900CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,336
SQA470EJ-T1_GE3
Vishay Siliconix

MOSFET N-CH 30V POWERPAK SC-70-6

Package: PowerPAK? SC-70-6

Stock4,672
PMZ390UNEYL
Nexperia USA Inc.

MOSFET N-CH 30V 0.9A XQFN3

Package: SC-101, SOT-883

Stock7,648
IPP034NE7N3GXKSA1
Infineon Technologies

MOSFET N-CH 75V 100A TO220-3

Package: TO-220-3

Stock10,320
STE145N65M5
STMicroelectronics

MOSFET N-CH 650V 143A ISOTOP

Package: ISOTOP

Stock6,432
IRLMS6702TRPBF
Infineon Technologies

MOSFET P-CH 20V 2.4A 6-TSOP

Package: SOT-23-6

Stock1,693,260
IRFP4127PBF
Infineon Technologies

MOSFET N-CH 200V 75A TO-247AC

Package: TO-247-3

Stock18,684
BUK7219-55A,118
Nexperia USA Inc.

MOSFET N-CH 55V 55A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock86,202
STF10N65K3
STMicroelectronics

MOSFET N-CH 650V 10A TO-220FP

Package: TO-220-3 Full Pack

Stock470,352
CSD16327Q3T
Texas Instruments

MOSFET N-CH 25V 60A 8VSON

Package: -

Stock17,730
TQM150NB04CR-RLG
Taiwan Semiconductor Corporation

MOSFET N-CH 40V 10A/41A PDFN56U

Package: -

Stock15,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6613TR1	Infineon Technologies	MOSFET N-CH 40V DIRECTFET-MT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 23A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock2,000	MOSFET (Metal Oxide)	40V	23A (Ta), 150A (Tc)	4.5V, 10V	2.25V @ 250µA	63nC @ 4.5V	5950pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	3.4 mOhm @ 23A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
SPD30N06S2L-23	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock326,244	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2V @ 50µA	42nC @ 10V	1390pF @ 25V	±20V	-	100W (Tc)	23 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9530NS	Infineon Technologies	MOSFET P-CH 100V 14A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,712	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	3.8W (Ta), 79W (Tc)	200 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCD5N60TF	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,344	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	5V @ 250µA	16nC @ 10V	600pF @ 25V	±30V	-	54W (Tc)	950 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF830ASTRL	Vishay Siliconix	MOSFET N-CH 500V 5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,064	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.5V @ 250µA	24nC @ 10V	620pF @ 25V	±30V	-	3.1W (Ta), 74W (Tc)	1.4 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB6NM60N	STMicroelectronics	MOSFET N-CH 600V 4.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,392	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	4V @ 250µA	13nC @ 10V	420pF @ 50V	±25V	-	45W (Tc)	920 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIPC46N60CFDX1SA1	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,288	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI7230DN-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 9A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock1,843,956	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	3V @ 250µA	20nC @ 5V	-	±20V	-	1.5W (Ta)	12 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
PSMN012-80PS,127	Nexperia USA Inc.	MOSFET N-CH 80V 74A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2782pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 148W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,392	MOSFET (Metal Oxide)	80V	74A (Tc)	10V	4V @ 1mA	43nC @ 10V	2782pF @ 12V	±20V	-	148W (Tc)	11 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
TSM70N900CH C5G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 482pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,336	MOSFET (Metal Oxide)	700V	4.5A (Tc)	10V	4V @ 250µA	9.7nC @ 10V	482pF @ 100V	±30V	-	50W (Tc)	900 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
SQA470EJ-T1_GE3	Vishay Siliconix	MOSFET N-CH 30V POWERPAK SC-70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock4,672	MOSFET (Metal Oxide)	30V	2.25A (Tc)	2.5V, 4.5V	1.1V @ 250µA	6nC @ 4.5V	440pF @ 20V	±12V	-	13.6W (Tc)	65 mOhm @ 3A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
PMZ390UNEYL	Nexperia USA Inc.	MOSFET N-CH 30V 0.9A XQFN3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta), 5.43W (Tc) Rds On (Max) @ Id, Vgs: 470 mOhm @ 900mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock7,648	MOSFET (Metal Oxide)	30V	900mA (Ta)	1.5V, 4.5V	950mV @ 250µA	1.3nC @ 4.5V	41pF @ 15V	±8V	-	350mW (Ta), 5.43W (Tc)	470 mOhm @ 900mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
IPP034NE7N3GXKSA1	Infineon Technologies	MOSFET N-CH 75V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 37.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock10,320	MOSFET (Metal Oxide)	75V	100A (Tc)	10V	3.8V @ 155µA	117nC @ 10V	8130pF @ 37.5V	±20V	-	214W (Tc)	3.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
STE145N65M5	STMicroelectronics	MOSFET N-CH 650V 143A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 143A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 414nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 679W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 69A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	Package: ISOTOP	Stock6,432	MOSFET (Metal Oxide)	650V	143A	10V	5V @ 250µA	414nC @ 10V	18500pF @ 100V	±25V	-	679W (Tc)	15 mOhm @ 69A, 10V	150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP
IRLMS6702TRPBF	Infineon Technologies	MOSFET P-CH 20V 2.4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6?(TSOP-6) Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,693,260	MOSFET (Metal Oxide)	20V	2.4A (Ta)	2.7V, 4.5V	700mV @ 250µA	8.8nC @ 4.5V	210pF @ 15V	±12V	-	1.7W (Ta)	200 mOhm @ 1.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)	SOT-23-6
IRFP4127PBF	Infineon Technologies	MOSFET N-CH 200V 75A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 341W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock18,684	MOSFET (Metal Oxide)	200V	75A (Tc)	10V	5V @ 250µA	150nC @ 10V	5380pF @ 50V	±20V	-	341W (Tc)	21 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
BUK7219-55A,118	Nexperia USA Inc.	MOSFET N-CH 55V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2108pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock86,202	MOSFET (Metal Oxide)	55V	55A (Tc)	10V	4V @ 1mA	-	2108pF @ 25V	±20V	-	114W (Tc)	19 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STF10N65K3	STMicroelectronics	MOSFET N-CH 650V 10A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock470,352	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	4.5V @ 100µA	42nC @ 10V	1180pF @ 25V	±30V	-	35W (Tc)	1 Ohm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
CSD16327Q3T	Texas Instruments	MOSFET N-CH 25V 60A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Package / Case: 8-PowerTDFN	Package: -	Stock17,730	MOSFET (Metal Oxide)	25 V	60A (Tc)	3V, 8V	1.4V @ 250µA	8.4 nC @ 4.5 V	1300 pF @ 12.5 V	+10V, -8V	-	74W (Tc)	4mOhm @ 24A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (3.3x3.3)	8-PowerTDFN
TQM150NB04CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 10A/41A PDFN56U FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	10A (Ta), 41A (Tc)	7V, 10V	3.8V @ 250µA	20 nC @ 10 V	1044 pF @ 20 V	±20V	-	3.1W (Ta), 56W (Tc)	15mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PDFNU (5x6)	8-PowerTDFN
SIHG052N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 48A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock900	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	5V @ 250µA	101 nC @ 10 V	3380 pF @ 100 V	±30V	-	278W (Tc)	52mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
NTMFS5H615NLT1G	onsemi	MOSFET N-CH 60V 28A/185A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 49A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock3,825	MOSFET (Metal Oxide)	60 V	28A (Ta), 185A (Tc)	4.5V, 10V	2V @ 250µA	63 nC @ 10 V	4860 pF @ 30 V	±20V	-	3.2W (Ta), 139W (Tc)	1.8mOhm @ 49A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SIHP120N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 25A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,916	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	5V @ 250µA	45 nC @ 10 V	1562 pF @ 100 V	±30V	-	179W (Tc)	120mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MCACL200N04Y-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock29,499	MOSFET (Metal Oxide)	40 V	200A	4.5V, 10V	2.5V @ 250µA	132 nC @ 10 V	7100 pF @ 25 V	±20V	-	120W	1.35mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
NTR4170NT1G-ML	MOSLEADER	N-Channel 30V 3.2A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMS007N08LC	onsemi	MOSFET N-CH 80V 14A/84A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 92.6W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock17,940	MOSFET (Metal Oxide)	80 V	14A (Ta), 84A (Tc)	4.5V, 10V	2.5V @ 120µA	46 nC @ 10 V	3100 pF @ 40 V	±20V	-	2.5W (Ta), 92.6W (Tc)	6.7mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
PMN20ENAX	Nexperia USA Inc.	MOSFET N-CH 40V 6.2A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 652mW (Ta), 7.5W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Stock64,974	MOSFET (Metal Oxide)	40 V	6.2A (Ta)	4.5V, 10V	2.7V @ 250µA	17 nC @ 10 V	582 pF @ 20 V	±20V	-	652mW (Ta), 7.5W (Tc)	23mOhm @ 6.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
GPI90007DF88	GaNPower	GaNFET N-CH 900V 7A DFN8x8 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 7A Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 1.2V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V Vgs (Max): +7.5V, -12V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 225mOhm @ 1.4A, 6V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (8x8) Package / Case: 8-DFN	Package: -	Request a Quote	GaNFET (Gallium Nitride)	900 V	7A	6V	1.2V @ 3.5mA	2.1 nC @ 6 V	60 pF @ 400 V	+7.5V, -12V	-	-	225mOhm @ 1.4A, 6V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (8x8)	8-DFN