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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,440 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | ±20V | - | 158W (Tc) | 11 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 90A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock124,800 |
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MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3V @ 250µA | 41nC @ 4.5V | 2672pF @ 16V | ±20V | - | 120W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 100V 60A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock4,608 |
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MOSFET (Metal Oxide) | 100V | 60A (Tc) | 8V, 10V | 4.5V @ 250µA | 75nC @ 10V | 2600pF @ 50V | ±20V | - | 3.75W (Ta), 150W (Tc) | 18.3 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 11.5A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock94,596 |
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MOSFET (Metal Oxide) | 30V | 11.5A (Ta), 85A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 28nC @ 4.5V | 2614pF @ 12V | ±16V | - | 880mW (Ta), 48.4W (Tc) | 4.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 4.2A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,728 |
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MOSFET (Metal Oxide) | 400V | 4.2A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 620pF @ 25V | ±30V | - | 2.5W (Ta), 50W (Tc) | 1.15 Ohm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock401,520 |
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MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 4V @ 250µA | 22nC @ 10V | 350pF @ 25V | ±20V | - | 3W (Ta), 40W (Tc) | 1.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 128nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 8260pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,224 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.3V, 10V | 2V @ 1mA | 128nC @ 5V | 8260pF @ 25V | ±15V | - | 300W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 20V 2.5A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 650mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 830mW (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,992 |
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MOSFET (Metal Oxide) | 20V | 2.5A (Tc) | 2.5V, 4.5V | 650mV @ 1mA | 10nC @ 4.5V | 230pF @ 10V | ±8V | - | 830mW (Tc) | 85 mOhm @ 3.6A, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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NXP |
MOSFET N-CH 55V 3.5A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Vgs (Max): ±13V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 5A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock3,440 |
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MOSFET (Metal Oxide) | 55V | 3.5A (Ta) | 5V | 2V @ 1mA | 11.2nC @ 5V | 650pF @ 25V | ±13V | - | 1.8W (Ta), 8.3W (Tc) | 80 mOhm @ 5A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,224 |
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MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 4V @ 150µA | 225nC @ 10V | 7330pF @ 25V | ±20V | - | 230W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET N-CH 85V 50A TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,928 |
|
MOSFET (Metal Oxide) | 85V | 50A (Tc) | - | 4V @ 25µA | - | - | - | - | - | - | - | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock36,000 |
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MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 122nC @ 10V | 4810pF @ 15V | ±20V | - | 5W (Ta), 69.4W (Tc) | 2.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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|
ON Semiconductor |
MOSFET N-CH 100V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock4,912 |
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MOSFET (Metal Oxide) | 100V | 8A (Ta), 33A (Ta) | 4.5V, 10V | 3V @ 250µA | 13.5nC @ 10V | 905pF @ 25V | ±16V | - | 3.6W (Ta), 62W (Tc) | 24 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 40V DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,248 |
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MOSFET (Metal Oxide) | 40V | 33A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 38nC @ 10V | 860pF @ 25V | ±20V | - | 40W (Tc) | 19 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 6.5A 8-TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock14,520 |
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MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 1V @ 250µA (Min) | 70nC @ 10V | - | ±20V | - | 1.5W (Ta) | 19 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 0.31A SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock1,149,648 |
|
MOSFET (Metal Oxide) | 60V | 310mA (Ta) | 5V, 10V | 2.1V @ 250µA | - | 50pF @ 25V | ±20V | - | 350mW (Ta) | 1.6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Nexperia USA Inc. |
MOSFET N-CH 55V 44A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock39,234 |
|
MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 2.8V @ 1mA | 33.8nC @ 10V | 1950pF @ 25V | ±16V | - | 80W (Tc) | 19 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 15.8A/39.3A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 39.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
|
Package: - |
Stock34,044 |
|
MOSFET (Metal Oxide) | 60 V | 15.8A (Ta), 39.3A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 1235 pF @ 30 V | ±20V | - | 3.6W (Ta), 22.3W (Tc) | 7.2mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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|
Vishay Siliconix |
MOSFET P-CH 80V 2.2A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock838,296 |
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MOSFET (Metal Oxide) | 80 V | 2.2A (Tc) | 6V, 10V | 2.5V @ 250µA | 18 nC @ 10 V | 620 pF @ 40 V | ±20V | - | 3W (Tc) | 290mOhm @ 1.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Panasonic Electronic Components |
MOSFET P-CH 12V 1.4A ALGA004
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 598µA
- Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 340mW (Ta)
- Rds On (Max) @ Id, Vgs: 153mOhm @ 700mA, 4.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: ALGA004-W-0606-RA01
- Package / Case: 4-XFLGA, CSP
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 1.4A (Ta) | 1.5V, 4.5V | 1V @ 598µA | 3.3 nC @ 4.5 V | 226 pF @ 10 V | ±8V | - | 340mW (Ta) | 153mOhm @ 700mA, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | ALGA004-W-0606-RA01 | 4-XFLGA, CSP |
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UMW |
SOT-23 POWER MOSFETS ROHS
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 4.5 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3L
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock8,715 |
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MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 3.2 nC @ 4.5 V | 325 pF @ 4.5 V | ±12V | - | 1.4W (Ta) | 120mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 16A/104A 8PDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5.2x5.75)
- Package / Case: 8-PowerLDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 16A (Ta), 104A (Tc) | 10V | 4V @ 250µA | 104 nC @ 10 V | 6870 pF @ 30 V | ±20V | - | 3.1W (Ta), 136W (Tc) | 5mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5.2x5.75) | 8-PowerLDFN |
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Diodes Incorporated |
MOSFET P-CH 20V PWRDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 20 V | 17.5A (Ta), 40A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 200 nC @ 10 V | 7500 pF @ 10 V | ±10V | - | 2.3W (Ta), 41W (Tc) | 5.5mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET_(75V 120V(
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5570 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 2.4V @ 83µA | 80 nC @ 10 V | 5570 pF @ 25 V | ±20V | - | 125W (Tc) | 12.1mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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onsemi |
MOSFET PWR N-CH 60V 52A TO-220AB
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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IXYS |
MOSFET N-CH 200V 72A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: - |
Stock24 |
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MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 4.5V @ 1.5mA | 55 nC @ 10 V | 3780 pF @ 25 V | ±20V | - | 320W (Tc) | 20mOhm @ 36A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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onsemi |
POWER MOSFET, 60 V, 1.1 M?, 342
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Nexperia USA Inc. |
MOSFET P-CH 30V 7.5A DFN2020MD-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1418 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 12.5W (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 7.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 44 nC @ 10 V | 1418 pF @ 15 V | ±25V | - | 2W (Ta), 12.5W (Tc) | 20mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |