Page 1340 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFB4510GPBF
Infineon Technologies

MOSFET N CH 100V 62A TO-220AB

Package: TO-220-3

Stock6,688
IRLR9343TRLPBF
Infineon Technologies

MOSFET P-CH 55V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,720
SPU30N03S2-08
Infineon Technologies

MOSFET N-CH 30V 30A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,488
GP1M006A065PH
Global Power Technologies Group

MOSFET N-CH 650V 5.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,776
PMR290UNE,115
NXP

MOSFET N-CH 20V 700MA SC-75

Package: SC-75, SOT-416

Stock2,048
FQB4N20TM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,424
NTD3813N-35G
ON Semiconductor

MOSFET N-CH 16V 9.6A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock3,712
NTB65N02RG
ON Semiconductor

MOSFET N-CH 25V 7.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,496
IXFC16N50P
IXYS

MOSFET N-CH 500V 10A ISOPLUS220

Package: ISOPLUS220?

Stock7,312
FQPF6N60C
Fairchild/ON Semiconductor

MOSFET N-CH 600V 5.5A TO-220F

Package: TO-220-3 Full Pack

Stock8,724
IXTU02N50D
IXYS

MOSFET N-CH 500V 0.2A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,576
AON2420
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 8A 6LDFN

Package: 6-UDFN Exposed Pad

Stock42,840
STD5N65M6
STMicroelectronics

MOSFET N-CH 650V DPAK

Package: -

Stock7,536
R6035KNZ1C9
Rohm Semiconductor

NCH 600V 35A POWER MOSFET

Package: TO-247-3

Stock10,716
IXTP8N70X2M
IXYS

MOSFET N-CHANNEL 700V 4A TO220-3

Package: TO-220-3

Stock7,792
FDS8882
Fairchild/ON Semiconductor

MOSFET N-CH 30V 9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock367,668
FQP34N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 31A TO-220

Package: TO-220-3

Stock50,436
IRF740ASPBF
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock8,244
IRF7456TRPBF
Infineon Technologies

MOSFET N-CH 20V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock65,580
BSS138W
Fairchild/ON Semiconductor

MOSFET N-CH 50V 0.21A SOT323

Package: SC-70, SOT-323

Stock72,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFB4510GPBF	Infineon Technologies	MOSFET N CH 100V 62A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3180pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,688	MOSFET (Metal Oxide)	100V	62A (Tc)	10V	4V @ 100µA	87nC @ 10V	3180pF @ 50V	±20V	-	140W (Tc)	13.5 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLR9343TRLPBF	Infineon Technologies	MOSFET P-CH 55V 20A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,720	MOSFET (Metal Oxide)	55V	20A (Tc)	4.5V, 10V	1V @ 250µA	47nC @ 10V	660pF @ 50V	±20V	-	79W (Tc)	105 mOhm @ 3.4A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SPU30N03S2-08	Infineon Technologies	MOSFET N-CH 30V 30A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,488	MOSFET (Metal Oxide)	30V	30A (Tc)	10V	4V @ 85µA	47nC @ 10V	2170pF @ 25V	±20V	-	125W (Tc)	8.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	P-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
GP1M006A065PH	Global Power Technologies Group	MOSFET N-CH 650V 5.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,776	MOSFET (Metal Oxide)	650V	5.5A (Tc)	10V	4V @ 250µA	17nC @ 10V	1177pF @ 25V	±30V	-	120W (Tc)	1.6 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PMR290UNE,115	NXP	MOSFET N-CH 20V 700MA SC-75 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 250mW (Ta), 770mW (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock2,048	MOSFET (Metal Oxide)	20V	700mA (Ta)	1.8V, 4.5V	950mV @ 250µA	0.68nC @ 4.5V	83pF @ 10V	±8V	-	250mW (Ta), 770mW (Tc)	380 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75	SC-75, SOT-416
FQB4N20TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,424	MOSFET (Metal Oxide)	200V	3.6A (Tc)	10V	5V @ 250µA	6.5nC @ 10V	220pF @ 25V	±30V	-	3.13W (Ta), 45W (Tc)	1.4 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTD3813N-35G	ON Semiconductor	MOSFET N-CH 16V 9.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock3,712	MOSFET (Metal Oxide)	16V	9.6A (Ta), 51A (Tc)	4.5V, 10V	2.5V @ 250µA	12.8nC @ 4.5V	963pF @ 12V	±16V	-	1.2W (Ta), 34.9W (Tc)	8.75 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTB65N02RG	ON Semiconductor	MOSFET N-CH 25V 7.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,496	MOSFET (Metal Oxide)	25V	65A (Tc)	4.5V, 10V	2V @ 250µA	9.5nC @ 4.5V	1330pF @ 20V	±20V	-	1.04W (Ta), 62.5W (Tc)	8.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFC16N50P	IXYS	MOSFET N-CH 500V 10A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock7,312	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	5.5V @ 2.5mA	43nC @ 10V	2250pF @ 25V	±30V	-	125W (Tc)	450 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
FQPF6N60C	Fairchild/ON Semiconductor	MOSFET N-CH 600V 5.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,724	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	4V @ 250µA	20nC @ 10V	810pF @ 25V	±30V	-	40W (Tc)	2 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IXTU02N50D	IXYS	MOSFET N-CH 500V 0.2A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 30 Ohm @ 50mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,576	MOSFET (Metal Oxide)	500V	200mA (Tc)	10V	5V @ 25µA	-	120pF @ 25V	±20V	Depletion Mode	1.1W (Ta), 25W (Tc)	30 Ohm @ 50mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
AON2420	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 8A 6LDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 552pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN-EP (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock42,840	MOSFET (Metal Oxide)	30V	8A (Ta)	4.5V, 10V	2.2V @ 250µA	12nC @ 10V	552pF @ 15V	±20V	-	2.8W (Ta)	11.7 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN-EP (2x2)	6-UDFN Exposed Pad
STD5N65M6	STMicroelectronics	MOSFET N-CH 650V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,536	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6035KNZ1C9	Rohm Semiconductor	NCH 600V 35A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 379W (Tc) Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock10,716	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 1mA	72nC @ 10V	3000pF @ 25V	±20V	-	379W (Tc)	102 mOhm @ 18.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXTP8N70X2M	IXYS	MOSFET N-CHANNEL 700V 4A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,792	MOSFET (Metal Oxide)	700V	4A (Tc)	10V	5V @ 250µA	12nC @ 10V	800pF @ 10V	±30V	-	32W (Tc)	550 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FDS8882	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock367,668	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	3V @ 250µA	20nC @ 10V	940pF @ 15V	±20V	-	2.5W (Ta)	20 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQP34N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 31A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 15.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock50,436	MOSFET (Metal Oxide)	200V	31A (Tc)	10V	5V @ 250µA	78nC @ 10V	3100pF @ 25V	±30V	-	180W (Tc)	75 mOhm @ 15.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF740ASPBF	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock8,244	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	36nC @ 10V	1030pF @ 25V	±30V	-	3.1W (Ta), 125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7456TRPBF	Infineon Technologies	MOSFET N-CH 20V 16A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock65,580	MOSFET (Metal Oxide)	20V	16A (Ta)	2.8V, 10V	2V @ 250µA	62nC @ 5V	3640pF @ 15V	±12V	-	2.5W (Ta)	6.5 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSS138W	Fairchild/ON Semiconductor	MOSFET N-CH 50V 0.21A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 340mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock72,000	MOSFET (Metal Oxide)	50V	210mA (Ta)	4.5V, 10V	1.5V @ 1mA	1.1nC @ 10V	38pF @ 25V	±20V	-	340mW (Ta)	3.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
HUF76639S3ST-F085	onsemi	MOSFET N CH 100V 51A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	51A (Tc)	10V	3V @ 250µA	86 nC @ 10 V	2400 pF @ 25 V	±16V	-	180W (Tc)	26mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPI65R190CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 17.5A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	17.5A (Tc)	10V	4.5V @ 700µA	68 nC @ 10 V	1850 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2PAK, TO-262AA
PJA3414_R1_00001-ML	MOSLEADER	N 20V 5.2A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCB110N10Y-TP	Micro Commercial Co	N-CHANNEL MOSFET,D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 260W Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock4,635	MOSFET (Metal Oxide)	100 V	110A (Tc)	10V	4V @ 250µA	66 nC @ 10 V	4600 pF @ 50 V	±20V	-	260W	5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHF065N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 40A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock3,021	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	5V @ 250µA	74 nC @ 10 V	2700 pF @ 100 V	±30V	-	39W (Tc)	65mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
CPH3413-TL-E	onsemi	N-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFI624BTUFP001	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.05A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 (I2PAK) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	4.1A (Tc)	10V	4V @ 250µA	18 nC @ 10 V	450 pF @ 25 V	±30V	-	3.13W (Ta), 49W (Tc)	1.1Ohm @ 2.05A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
DMN2053U-13	Diodes Incorporated	MOSFET N-CH 20V 6.5A SOT23 T&R 1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock29,934	MOSFET (Metal Oxide)	20 V	6.5A (Ta)	1.8V, 10V	1.2V @ 250µA	4.6 nC @ 4.5 V	414 pF @ 10 V	±12V	-	800mW (Ta)	29mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3