Page 1339 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SUD50P04-23-E3
Vishay Siliconix

MOSFET P-CH 40V 8.2A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock86,124
SI7491DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 11A PPAK SO-8

Package: PowerPAK? SO-8

Stock5,120
IXFN52N90P
IXYS

MOSFET N-CH 900V 43A SOT227

Package: SOT-227-4, miniBLOC

Stock7,376
FDB42AN15A0
Fairchild/ON Semiconductor

MOSFET N-CH 150V 35A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock49,848
IRFP354
Vishay Siliconix

MOSFET N-CH 450V 14A TO-247AC

Package: TO-247-3

Stock2,016
IPL60R2K1C6SATMA1
Infineon Technologies

MOSFET N-CH 8TSON

Package: 8-PowerTDFN

Stock2,960
IXFH14N80P
IXYS

MOSFET N-CH 800V 14A TO-247

Package: TO-247-3

Stock6,224
IRFBC20STRLPBF
Vishay Siliconix

MOSFET N-CH 600V 2.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,440
TSM70N380CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,112
PMZB370UNE,315
Nexperia USA Inc.

MOSFET N-CH 30V 0.9A DFN1006B-3

Package: 3-XFDFN

Stock5,824
NTMFS4934NT1G
ON Semiconductor

MOSFET N-CH 30V 147A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock15,204
RS1E130GNTB
Rohm Semiconductor

MOSFET N-CH 30V 13A 8-HSOP

Package: 8-PowerTDFN

Stock3,616
FDB2710
Fairchild/ON Semiconductor

MOSFET N-CH 250V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,132
FDPF39N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 39A TO-220F

Package: TO-220-3 Full Pack

Stock29,388
IXFN360N10T
IXYS

MOSFET N-CH 100V 360A SOT-227B

Package: SOT-227-4, miniBLOC

Stock15,120
RQ6E035SPTR
Rohm Semiconductor

MOSFET P-CH 30V 3.5A TSMT6

Package: -

Stock8,118
V30408-T1-GE3
Vishay Siliconix

MOSFET N-CH SMD

Package: -

Request a Quote
2N7002K-AU_R1_000A2
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Package: -

Stock37,182
AOSX21319C
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 2.6A SC70-6

Package: -

Request a Quote
BSZ035N03MSGATMA1
Infineon Technologies

MOSFET N-CH 30V 18A/40A 8TSDSON

Package: -

Stock35,175

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SUD50P04-23-E3	Vishay Siliconix	MOSFET P-CH 40V 8.2A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 20V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 45.4W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock86,124	MOSFET (Metal Oxide)	40V	8.2A (Ta), 20A (Tc)	4.5V, 10V	2V @ 250µA	65nC @ 10V	1880pF @ 20V	±16V	-	3.1W (Ta), 45.4W (Tc)	23 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7491DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 11A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock5,120	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	85nC @ 5V	-	±20V	-	1.8W (Ta)	8.5 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IXFN52N90P	IXYS	MOSFET N-CH 900V 43A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 43A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,376	MOSFET (Metal Oxide)	900V	43A	10V	6.5V @ 1mA	308nC @ 10V	19000pF @ 25V	±30V	-	890W (Tc)	160 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
FDB42AN15A0	Fairchild/ON Semiconductor	MOSFET N-CH 150V 35A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock49,848	MOSFET (Metal Oxide)	150V	5A (Ta), 35A (Tc)	6V, 10V	4V @ 250µA	39nC @ 10V	2150pF @ 25V	±20V	-	150W (Tc)	42 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFP354	Vishay Siliconix	MOSFET N-CH 450V 14A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,016	MOSFET (Metal Oxide)	450V	14A (Tc)	10V	4V @ 250µA	160nC @ 10V	2700pF @ 25V	±20V	-	190W (Tc)	350 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPL60R2K1C6SATMA1	Infineon Technologies	MOSFET N-CH 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 21.6W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 760mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-PAK (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,960	MOSFET (Metal Oxide)	600V	2.3A (Tc)	10V	3.5V @ 60µA	6.7nC @ 10V	140pF @ 100V	±20V	-	21.6W (Tc)	2.1 Ohm @ 760mA, 10V	-40°C ~ 150°C (TJ)	Surface Mount	Thin-PAK (5x6)	8-PowerTDFN
IXFH14N80P	IXYS	MOSFET N-CH 800V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,224	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5.5V @ 4mA	61nC @ 10V	3900pF @ 25V	±30V	-	400W (Tc)	720 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IRFBC20STRLPBF	Vishay Siliconix	MOSFET N-CH 600V 2.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,440	MOSFET (Metal Oxide)	600V	2.2A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	4.4 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TSM70N380CP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 981pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,112	MOSFET (Metal Oxide)	700V	11A (Tc)	10V	4V @ 250µA	18.8nC @ 10V	981pF @ 100V	±30V	-	125W (Tc)	380 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
PMZB370UNE,315	Nexperia USA Inc.	MOSFET N-CH 30V 0.9A DFN1006B-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.16nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 490 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006B (0.6x1) Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock5,824	MOSFET (Metal Oxide)	30V	900mA (Ta)	1.8V, 4.5V	1.05V @ 250µA	1.16nC @ 15V	78pF @ 25V	±8V	-	360mW (Ta), 2.7W (Tc)	490 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN1006B (0.6x1)	3-XFDFN
NTMFS4934NT1G	ON Semiconductor	MOSFET N-CH 30V 147A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5505pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 930mW (Ta), 69.44W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock15,204	MOSFET (Metal Oxide)	30V	17.1A (Ta), 147A (Tc)	4.5V, 10V	2.2V @ 250µA	34nC @ 4.5V	5505pF @ 15V	±20V	-	930mW (Ta), 69.44W (Tc)	2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
RS1E130GNTB	Rohm Semiconductor	MOSFET N-CH 30V 13A 8-HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 22.2W (Tc) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,616	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.5V @ 1mA	7.9nC @ 10V	420pF @ 15V	±20V	-	3W (Ta), 22.2W (Tc)	11.7 mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
FDB2710	Fairchild/ON Semiconductor	MOSFET N-CH 250V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,132	MOSFET (Metal Oxide)	250V	50A (Tc)	10V	5V @ 250µA	101nC @ 10V	7280pF @ 25V	±30V	-	260W (Tc)	42.5 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDPF39N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 39A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock29,388	MOSFET (Metal Oxide)	200V	39A (Tc)	10V	5V @ 250µA	49nC @ 10V	2130pF @ 25V	±30V	-	37W (Tc)	66 mOhm @ 19.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IXFN360N10T	IXYS	MOSFET N-CH 100V 360A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 360A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 505nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 36000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 180A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock15,120	MOSFET (Metal Oxide)	100V	360A	10V	4.5V @ 250µA	505nC @ 10V	36000pF @ 25V	±20V	-	830W (Tc)	2.6 mOhm @ 180A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
RQ6E035SPTR	Rohm Semiconductor	MOSFET P-CH 30V 3.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock8,118	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	4V, 10V	2.5V @ 1mA	9.2 nC @ 5 V	780 pF @ 10 V	±20V	-	950mW (Ta)	65mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
V30408-T1-GE3	Vishay Siliconix	MOSFET N-CH SMD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7002K-AU_R1_000A2	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock37,182	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.8 nC @ 5 V	35 pF @ 25 V	±20V	-	500mW (Ta)	3Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
AOSX21319C	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 2.6A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.6A (Ta)	4.5V, 10V	2.2V @ 250µA	12 nC @ 10 V	320 pF @ 15 V	±20V	-	1.1W (Ta)	100mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
BSZ035N03MSGATMA1	Infineon Technologies	MOSFET N-CH 30V 18A/40A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: -	Stock35,175	MOSFET (Metal Oxide)	30 V	18A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	74 nC @ 10 V	5700 pF @ 15 V	±20V	-	2.1W (Ta), 69W (Tc)	3.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
UPA2718AGR-E2-AT	Renesas Electronics Corporation	MOSFET P-CH 30V 13A 8PSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9mOhm @ 6.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	13A (Ta)	-	2.5V @ 1mA	67 nC @ 10 V	2810 pF @ 10 V	-	-	-	9mOhm @ 6.5A, 10V	-	Surface Mount	8-PSOP	8-SOIC (0.173", 4.40mm Width)
IPB600N25N3GATMA1	Infineon Technologies	MOSFET N-CH 250V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock14,874	MOSFET (Metal Oxide)	250 V	25A (Tc)	10V	4V @ 90µA	29 nC @ 10 V	2350 pF @ 100 V	±20V	-	136W (Tc)	60mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI1416EDH-T1-BE3	Vishay Siliconix	MOSFET N-CH 30V 3.9A/3.9A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.9A (Ta), 3.9A (Tc)	-	1.4V @ 250µA	12 nC @ 10 V	-	±12V	-	1.56W (Ta), 2.8W (Tc)	58mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
CPH3350-TL-H	onsemi	SMALL SIGNAL FIELD-EFFECT TRANSI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3A (Ta)	-	-	4.6 nC @ 4.5 V	375 pF @ 10 V	-	-	-	83mOhm @ 1.5A, 4.5V	-	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
R6055VNZ4C13	Rohm Semiconductor	600V 55A TO-247, PRESTOMOS WITH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock2,031	MOSFET (Metal Oxide)	600 V	55A (Tc)	10V, 15V	6.5V @ 1.5mA	80 nC @ 10 V	3700 pF @ 100 V	±30V	-	543W (Tc)	71mOhm @ 16A, 15V	150°C (TJ)	Through Hole	TO-247	TO-247-3
IGT60R190D1SATMA1	Infineon Technologies	GANFET N-CH 600V 12.5A 8HSOF FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 960µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 55.5W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	Package: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	12.5A (Tc)	-	1.6V @ 960µA	-	157 pF @ 400 V	-10V	-	55.5W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-3	8-PowerSFN
RJK0364DPA-WS-J0	Renesas Electronics Corporation	POWER TRANSISTOR, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FSS234-TL-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-