Page 1386 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR3303TRLPBF
Infineon Technologies

MOSFET N-CH 30V 35A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,696
IRL5602L
Infineon Technologies

MOSFET P-CH 20V 24A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,352
RJK0854DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V LFPAK

Package: SC-100, SOT-669

Stock2,832
SFT1423-TL-E
ON Semiconductor

MOSFET N-CH 500V 2A TP-FA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,072
SI7445DP-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 12A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock3,776
IPD65R1K5CEAUMA1
Infineon Technologies

MOSFET N-CH TO-252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,712
APT43F60L
Microsemi Corporation

MOSFET N-CH 600V 45A TO-264

Package: TO-264-3, TO-264AA

Stock2,384
SIHG32N50D-E3
Vishay Siliconix

MOSFET N-CH 500V 30A TO-247AC

Package: TO-247-3

Stock5,104
AOT418L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 9.5A TO220

Package: TO-220-3

Stock22,800
ZVN4206ASTZ
Diodes Incorporated

MOSFET N-CH 60V 0.6A TO92-3

Package: E-Line-3

Stock6,944
PMT200EPEAX
Nexperia USA Inc.

PMT200EPEA/SOT223/SC-73

Package: -

Stock4,784
FDB8444_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 70A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,952
DMN1019UFDE-7
Diodes Incorporated

MOSFET N CH 12V 11A U-DFN2020-6E

Package: 6-UDFN Exposed Pad

Stock5,600
IXFH400N075T2
IXYS

MOSFET N-CH 75V 400A TO-247

Package: TO-247-3

Stock4,672
IRF1405ZLPBF
Infineon Technologies

MOSFET N-CH 55V 75A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock10,284
STB40NF10T4
STMicroelectronics

MOSFET N-CH 100V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock22,140
FDMS7672
Fairchild/ON Semiconductor

MOSFET N-CH 30V 19A POWER56

Package: 8-PowerTDFN

Stock342,960
STH245N75F3-6
STMicroelectronics

MOSFET N-CH 75V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock19,188
RJK0702DPP-E0-T2
Renesas Electronics Corporation

MOSFET N-CH 75V 90A TO220FP

Package: -

Request a Quote
PJA138K_R1_00001
Panjit International Inc.

SOT-23, MOSFET

Package: -

Stock892,089

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR3303TRLPBF	Infineon Technologies	MOSFET N-CH 30V 35A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,696	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	1V @ 250µA	26nC @ 4.5V	870pF @ 25V	±16V	-	68W (Tc)	31 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL5602L	Infineon Technologies	MOSFET P-CH 20V 24A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,352	MOSFET (Metal Oxide)	20V	24A (Tc)	2.5V, 4.5V	1V @ 250µA	44nC @ 4.5V	1460pF @ 15V	±8V	-	-	42 mOhm @ 12A, 4.5V	-	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
RJK0854DPB-00#J5	Renesas Electronics America	MOSFET N-CH 80V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,832	MOSFET (Metal Oxide)	80V	25A (Ta)	10V	-	27nC @ 10V	2000pF @ 10V	±20V	-	55W (Tc)	13 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
SFT1423-TL-E	ON Semiconductor	MOSFET N-CH 500V 2A TP-FA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,072	MOSFET (Metal Oxide)	500V	2A (Ta)	4V, 10V	-	8.7nC @ 10V	175pF @ 30V	±20V	-	1W (Ta), 20W (Tc)	4.9 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7445DP-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 12A PPAK 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock3,776	MOSFET (Metal Oxide)	20V	12A (Ta)	1.8V, 4.5V	1V @ 250µA	140nC @ 5V	-	±8V	-	1.9W (Ta)	7.7 mOhm @ 19A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IPD65R1K5CEAUMA1	Infineon Technologies	MOSFET N-CH TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,712	MOSFET (Metal Oxide)	700V	5.2A (Tc)	10V	3.5V @ 100µA	10.5nC @ 10V	225pF @ 100V	±20V	-	53W (Tc)	1.5 Ohm @ 1A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
APT43F60L	Microsemi Corporation	MOSFET N-CH 600V 45A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,384	MOSFET (Metal Oxide)	600V	45A (Tc)	10V	5V @ 2.5mA	215nC @ 10V	8590pF @ 25V	±30V	-	780W (Tc)	150 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
SIHG32N50D-E3	Vishay Siliconix	MOSFET N-CH 500V 30A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock5,104	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	5V @ 250µA	96nC @ 10V	2550pF @ 100V	±30V	-	390W (Tc)	150 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
AOT418L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 9.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock22,800	MOSFET (Metal Oxide)	100V	9.5A (Ta), 105A (Tc)	7V, 10V	3.9V @ 250µA	83nC @ 10V	5200pF @ 50V	±25V	-	2.1W (Ta), 333W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
ZVN4206ASTZ	Diodes Incorporated	MOSFET N-CH 60V 0.6A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock6,944	MOSFET (Metal Oxide)	60V	600mA (Ta)	5V, 10V	3V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
PMT200EPEAX	Nexperia USA Inc.	PMT200EPEA/SOT223/SC-73 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,784	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDB8444_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 70A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8035pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,952	MOSFET (Metal Oxide)	40V	70A (Tc)	10V	4V @ 250µA	128nC @ 10V	8035pF @ 25V	±20V	-	167W (Tc)	5.5 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN1019UFDE-7	Diodes Incorporated	MOSFET N CH 12V 11A U-DFN2020-6E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 690mW (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock5,600	MOSFET (Metal Oxide)	12V	11A (Ta)	1.2V, 4.5V	800mV @ 250µA	50.6nC @ 8V	2425pF @ 10V	±8V	-	690mW (Ta)	10 mOhm @ 9.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-UDFN Exposed Pad
IXFH400N075T2	IXYS	MOSFET N-CH 75V 400A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,672	MOSFET (Metal Oxide)	75V	400A (Tc)	10V	4V @ 250µA	420nC @ 10V	24000pF @ 25V	±20V	-	1000W (Tc)	2.3 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IRF1405ZLPBF	Infineon Technologies	MOSFET N-CH 55V 75A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock10,284	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	180nC @ 10V	4780pF @ 25V	±20V	-	230W (Tc)	4.9 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
STB40NF10T4	STMicroelectronics	MOSFET N-CH 100V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 25A, 10V Operating Temperature: -50°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock22,140	MOSFET (Metal Oxide)	100V	50A (Tc)	10V	4V @ 250µA	80nC @ 10V	1780pF @ 25V	±20V	-	150W (Tc)	28 mOhm @ 25A, 10V	-50°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS7672	Fairchild/ON Semiconductor	MOSFET N-CH 30V 19A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2960pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock342,960	MOSFET (Metal Oxide)	30V	19A (Ta), 28A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 10V	2960pF @ 15V	±20V	-	2.5W (Ta), 48W (Tc)	5 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
STH245N75F3-6	STMicroelectronics	MOSFET N-CH 75V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock19,188	MOSFET (Metal Oxide)	75V	180A (Tc)	10V	4V @ 250µA	87nC @ 10V	6800pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-6	TO-263-7, D2Pak (6 Leads + Tab)
RJK0702DPP-E0-T2	Renesas Electronics Corporation	MOSFET N-CH 75V 90A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 45A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	75 V	90A (Ta)	-	-	89 nC @ 10 V	6450 pF @ 10 V	-	-	30W (Tc)	4.8mOhm @ 45A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
PJA138K_R1_00001	Panjit International Inc.	SOT-23, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock892,089	MOSFET (Metal Oxide)	50 V	500mA (Ta)	2.5V, 10V	1.5V @ 250µA	1 nC @ 4.5 V	50 pF @ 25 V	±20V	-	500mW (Ta)	1.6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
MCAC50N10Y-TP	Micro Commercial Co	MOSFET N-CH 100V 50A DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock80,835	MOSFET (Metal Oxide)	100 V	50A (Tj)	4.5V, 10V	3V @ 250µA	50 nC @ 10 V	2808 pF @ 15 V	±20V	-	75W	7mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
APT6013B2LLG	Microchip Technology	MOSFET N-CH 600V 43A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	43A (Tc)	-	5V @ 2.5mA	130 nC @ 10 V	5630 pF @ 25 V	-	-	-	130mOhm @ 21.5A, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
AOT2140L	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 272W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	57A (Ta), 195A (Tc)	4.5V, 10V	2.3V @ 250µA	180 nC @ 10 V	9985 pF @ 20 V	±20V	-	8.3W (Ta), 272W (Tc)	1.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
SSM3J15FS-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 100MA SSM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	Package: -	Stock9,285	MOSFET (Metal Oxide)	30 V	100mA (Ta)	2.5V, 4V	1.7V @ 100µA	-	9.1 pF @ 3 V	±20V	-	100mW (Ta)	12Ohm @ 10mA, 4V	150°C	Surface Mount	SSM	SC-75, SOT-416
SI3469DV-T1-BE3	Vishay Siliconix	P-CHANNEL 20-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock15,360	MOSFET (Metal Oxide)	20 V	5A (Ta)	4.5V, 10V	3V @ 250µA	30 nC @ 10 V	-	±20V	-	1.14W (Ta)	30mOhm @ 6.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
TP65H070LSG	Transphorm	GANFET N-CH 650V 25A 3PQFN FET Type: N-Channel Technology: GaNFET (Cascode Gallium Nitride FET) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	Package: -	Request a Quote	GaNFET (Cascode Gallium Nitride FET)	650 V	25A (Tc)	10V	4.8V @ 700µA	9.3 nC @ 10 V	600 pF @ 400 V	±20V	-	96W (Tc)	85mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerDFN
NTD5C684NL	onsemi	MOSFET N-CH 60V 46A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	10A (Ta), 27A (Tc)	4.5V, 10V	2.1V @ 20µA	9.6 nC @ 10 V	700 pF @ 25 V	±20V	-	3.6W (Ta), 25W (Tc)	16.5mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB013N06NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 246µA Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock465	MOSFET (Metal Oxide)	60 V	40A (Ta), 198A (Tc)	6V, 10V	3.3V @ 246µA	305 nC @ 10 V	13800 pF @ 30 V	±20V	-	3.8W (Ta), 300W (Tc)	1.3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB