Page 1388 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI126N10N3 G
Infineon Technologies

MOSFET N-CH 100V 58A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,096
IRFR3504ZTRL
Infineon Technologies

MOSFET N-CH 40V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,120
GP1M005A050FSH
Global Power Technologies Group

MOSFET N-CH 500V 4A TO220F

Package: TO-220-3 Full Pack

Stock6,528
NTD3055-150-1G
ON Semiconductor

MOSFET N-CH 60V 9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,584
HUFA75332S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,972
FQPF19N20T
Fairchild/ON Semiconductor

MOSFET N-CH 100V 11.8A TO-220F

Package: TO-220-3 Full Pack

Stock3,552
ZVN4306ASTZ
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

Package: E-Line-3

Stock5,648
IXFK26N100P
IXYS

MOSFET N-CH 1000V 26A TO-264

Package: TO-264-3, TO-264AA

Stock3,600
IXFH40N50Q
IXYS

MOSFET N-CH 500V 40A TO-247AD

Package: TO-247-3

Stock390,000
RCD050N20TL
Rohm Semiconductor

MOSFET N-CH 200V 5A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock360,000
6HP04MH-TL-W
ON Semiconductor

MOSFET P-CH 60V .37A

Package: 3-SMD, Flat Leads

Stock4,976
IXTH60N20L2
IXYS

MOSFET N-CH 200V 60A TO-247

Package: TO-247-3

Stock390,000
IRFB3207ZGPBF
Infineon Technologies

MOSFET N-CH 75V 120A TO-220AB

Package: TO-220-3

Stock6,168
IRF6811STRPBF
Infineon Technologies

MOSFET N CH 25V 19A DIRECTFET

Package: DirectFET? Isometric SQ

Stock69,144
TPCA8051-H(T2L1,VM
Toshiba Semiconductor and Storage

MOSFET N-CH 80V 28A 8-SOP ADV

Package: 8-PowerVDFN

Stock43,386
IPW65R095C7XKSA1
Infineon Technologies

MOSFET N-CH 650V 24A TO247

Package: TO-247-3

Stock6,084
SPA03N60C3
Infineon Technologies

MOSFET N-CH 650V 3.2A TO-220

Package: TO-220-3 Full Pack

Stock102,156
DMN53D0L-7
Diodes Incorporated

MOSFET N-CH 50V 0.5A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock72,000
IXFH44N50P
IXYS

MOSFET N-CH 500V 44A TO-247

Package: TO-247-3

Stock103,596
IRLB3813PBF
Infineon Technologies

MOSFET N-CH 30V 260A TO-220AB

Package: TO-220-3

Stock4,656

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI126N10N3 G	Infineon Technologies	MOSFET N-CH 100V 58A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,096	MOSFET (Metal Oxide)	100V	58A (Tc)	6V, 10V	3.5V @ 46µA	35nC @ 10V	2500pF @ 50V	±20V	-	94W (Tc)	12.6 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR3504ZTRL	Infineon Technologies	MOSFET N-CH 40V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,120	MOSFET (Metal Oxide)	40V	42A (Tc)	10V	4V @ 50µA	45nC @ 10V	1510pF @ 25V	±20V	-	90W (Tc)	9 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
GP1M005A050FSH	Global Power Technologies Group	MOSFET N-CH 500V 4A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 602pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 1.85 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,528	MOSFET (Metal Oxide)	500V	4A (Tc)	10V	3.5V @ 250µA	11nC @ 10V	602pF @ 25V	±30V	-	32W (Tc)	1.85 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NTD3055-150-1G	ON Semiconductor	MOSFET N-CH 60V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,584	MOSFET (Metal Oxide)	60V	9A (Ta)	10V	4V @ 250µA	15nC @ 10V	280pF @ 25V	±20V	-	1.5W (Ta), 28.8W (Tj)	150 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
HUFA75332S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,972	MOSFET (Metal Oxide)	55V	60A (Tc)	10V	4V @ 250µA	85nC @ 20V	1300pF @ 25V	±20V	-	145W (Tc)	19 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF19N20T	Fairchild/ON Semiconductor	MOSFET N-CH 100V 11.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,552	MOSFET (Metal Oxide)	100V	11.8A (Tc)	10V	5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	50W (Tc)	150 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
ZVN4306ASTZ	Diodes Incorporated	MOSFET N-CH 60V 1.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock5,648	MOSFET (Metal Oxide)	60V	1.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
IXFK26N100P	IXYS	MOSFET N-CH 1000V 26A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,600	MOSFET (Metal Oxide)	1000V	26A (Tc)	10V	6.5V @ 1mA	197nC @ 10V	11900pF @ 25V	±30V	-	780W (Tc)	390 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFH40N50Q	IXYS	MOSFET N-CH 500V 40A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	500V	40A (Tc)	10V	4.5V @ 4mA	130nC @ 10V	3800pF @ 25V	±30V	-	500W (Tc)	140 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
RCD050N20TL	Rohm Semiconductor	MOSFET N-CH 200V 5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 618 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock360,000	MOSFET (Metal Oxide)	200V	5A (Ta)	10V	5.25V @ 1mA	9nC @ 10V	380pF @ 25V	±30V	-	20W (Tc)	618 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
6HP04MH-TL-W	ON Semiconductor	MOSFET P-CH 60V .37A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24.1pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 190mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock4,976	MOSFET (Metal Oxide)	60V	370mA (Ta)	4V, 10V	-	0.84nC @ 10V	24.1pF @ 20V	±20V	-	600mW (Ta)	4.2 Ohm @ 190mA, 10V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
IXTH60N20L2	IXYS	MOSFET N-CH 200V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	200V	60A (Tc)	10V	4.5V @ 250µA	255nC @ 10V	10500pF @ 25V	±20V	-	540W (Tc)	45 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IRFB3207ZGPBF	Infineon Technologies	MOSFET N-CH 75V 120A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6920pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,168	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6920pF @ 50V	±20V	-	300W (Tc)	4.1 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF6811STRPBF	Infineon Technologies	MOSFET N CH 25V 19A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 13V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 19A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock69,144	MOSFET (Metal Oxide)	25V	19A (Ta), 74A (Tc)	4.5V, 10V	2.1V @ 35µA	17nC @ 4.5V	1590pF @ 13V	±16V	-	2.1W (Ta), 32W (Tc)	3.7 mOhm @ 19A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
TPCA8051-H(T2L1,VM	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 28A 8-SOP ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock43,386	MOSFET (Metal Oxide)	80V	28A (Ta)	4.5V, 10V	2.3V @ 1mA	91nC @ 10V	7540pF @ 10V	±20V	-	1.6W (Ta), 45W (Tc)	9.4 mOhm @ 14A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
IPW65R095C7XKSA1	Infineon Technologies	MOSFET N-CH 650V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,084	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 590µA	45nC @ 10V	2140pF @ 400V	±20V	-	128W (Tc)	95 mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247	TO-247-3
SPA03N60C3	Infineon Technologies	MOSFET N-CH 650V 3.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29.7W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock102,156	MOSFET (Metal Oxide)	650V	3.2A (Tc)	10V	3.9V @ 135µA	17nC @ 10V	400pF @ 25V	±20V	-	29.7W (Tc)	1.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
DMN53D0L-7	Diodes Incorporated	MOSFET N-CH 50V 0.5A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock72,000	MOSFET (Metal Oxide)	50V	500mA (Ta)	2.5V, 10V	1.5V @ 250µA	0.6nC @ 4.5V	46pF @ 25V	±20V	-	370mW (Ta)	1.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IXFH44N50P	IXYS	MOSFET N-CH 500V 44A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 658W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock103,596	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	5V @ 4mA	98nC @ 10V	5440pF @ 25V	±30V	-	658W (Tc)	140 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IRLB3813PBF	Infineon Technologies	MOSFET N-CH 30V 260A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8420pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,656	MOSFET (Metal Oxide)	30V	260A (Tc)	4.5V, 10V	2.35V @ 150µA	86nC @ 4.5V	8420pF @ 15V	±20V	-	230W (Tc)	1.95 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
TK8R2E06PL-S1X	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock132	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	2.5V @ 300µA	28 nC @ 10 V	1990 pF @ 30 V	±20V	-	81W (Tc)	8.2mOhm @ 25A, 10V	175°C	Through Hole	TO-220	TO-220-3
NTR1P02LT1G-ML	MOSLEADER	P-Channel -20V -1.3A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMPB14R8XNX	Nexperia USA Inc.	SMALL SIGNAL MOSFETS FOR PORTABL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 18.4mOhm @ 7.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020M-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock8,394	MOSFET (Metal Oxide)	30 V	7.3A (Ta)	1.8V, 4.5V	900mV @ 250µA	6.5 nC @ 4.5 V	500 pF @ 15 V	±12V	-	1.5W (Ta), 18W (Tc)	18.4mOhm @ 7.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020M-6	6-UDFN Exposed Pad
IXTA340N04T4-TRL	IXYS	MOSFET N-CH TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN4030LK3Q-13	Diodes Incorporated	MOSFET N-CH 40V 9.4A TO252 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.14W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	9.4A (Ta)	4.5V, 10V	3V @ 250µA	12.9 nC @ 10 V	604 pF @ 20 V	±20V	-	2.14W (Ta)	30mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
PXP9R1-30QLJ	Nexperia USA Inc.	PXP9R1-30QL/SOT8002/MLPAK33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 57.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock8,850	MOSFET (Metal Oxide)	30 V	10.9A (Ta), 57.2A (Tc)	4.5V, 10V	2.5V @ 250µA	86 nC @ 10 V	2860 pF @ 15 V	±20V	-	1.8W (Ta), 50W (Tc)	9.1mOhm @ 10.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN
2SK2378	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP1010UCA4-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V X2-DSN1212- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 699 pF @ 4 V Vgs (Max): -6V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DSN1212-4 Package / Case: 4-SMD, No Lead	Package: -	Request a Quote	MOSFET (Metal Oxide)	8 V	6A (Ta)	1.5V, 4.5V	1.05V @ 250µA	7 nC @ 4.5 V	699 pF @ 4 V	-6V	-	630mW (Ta)	9.9mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DSN1212-4	4-SMD, No Lead