Page 1387 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

2SK3707-1E
ON Semiconductor

MOSFET N-CH 100V 20A

Package: TO-220-3 Full Pack

Stock7,872
FQPF12P20YDTU
Fairchild/ON Semiconductor

MOSFET P-CH 200V 7.3A TO-220F

Package: TO-220-3 Full Pack

Stock6,512
FQD1N60CTF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,448
IRF644NPBF
Vishay Siliconix

MOSFET N-CH 250V 14A TO-220AB

Package: TO-220-3

Stock7,776
NTD60N03-001
ON Semiconductor

MOSFET N-CH 28V 60A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,864
NTGS3455T1
ON Semiconductor

MOSFET P-CH 30V 2.5A 6-TSOP

Package: SOT-23-6

Stock100,800
RDN100N20FU6
Rohm Semiconductor

MOSFET N-CH 200V 10A TO-220FN

Package: TO-220-3 Full Pack

Stock12,924
TK7A60W,S4VX
Toshiba Semiconductor and Storage

MOSFET N CH 600V 7A TO-220SIS

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,200
PSMN3R5-80ES,127
Nexperia USA Inc.

MOSFET N-CH 80V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,440
IRLZ34SPBF
Vishay Siliconix

MOSFET N-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,384
STD5NK60ZT4
STMicroelectronics

MOSFET N-CH 600V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock914,652
TPH3205WSBQA
Transphorm

GAN FET 650V 35A TO247

Package: TO-247-3

Stock22,224
IXTN200N10L2
IXYS

MOSFET N-CH 100V 178A SOT-227

Package: SOT-227-4, miniBLOC

Stock7,752
STW9N150
STMicroelectronics

MOSFET N-CH 1500V 8A TO-247

Package: TO-247-3

Stock93,696
TSM650P03CX
Taiwan Semiconductor Corporation

-30V, -4.1A, SINGLE P-CHANNEL PO

Package: -

Request a Quote
IXFX130N65X3
IXYS

DISCRETE MOSFET 130A 650V X3 PLU

Package: -

Request a Quote
CSD18511KCS
Texas Instruments

MOSFET N-CH 40V 194A TO220-3

Package: -

Stock2,661
NTMFS6H858NLT1G
onsemi

T8 80V LL SO8FL

Package: -

Stock4,215
SQ4840EY-T1_BE3
Vishay Siliconix

MOSFET N-CH 40V 20.7A 8SOIC

Package: -

Stock7,494
DMN2991UFZQ-7B
Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN0606-

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2SK3707-1E	ON Semiconductor	MOSFET N-CH 100V 20A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3SG Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,872	MOSFET (Metal Oxide)	100V	20A (Ta)	4V, 10V	-	44nC @ 10V	2150pF @ 20V	±20V	-	2W (Ta), 25W (Tc)	60 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220F-3SG	TO-220-3 Full Pack
FQPF12P20YDTU	Fairchild/ON Semiconductor	MOSFET P-CH 200V 7.3A TO-220F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 470 mOhm @ 3.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,512	MOSFET (Metal Oxide)	200V	7.3A (Tc)	10V	5V @ 250µA	40nC @ 10V	1200pF @ 25V	±30V	-	50W (Tc)	470 mOhm @ 3.65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQD1N60CTF	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,448	MOSFET (Metal Oxide)	600V	1A (Tc)	10V	4V @ 250µA	6.2nC @ 10V	170pF @ 25V	±30V	-	2.5W (Ta), 28W (Tc)	11.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF644NPBF	Vishay Siliconix	MOSFET N-CH 250V 14A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,776	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	54nC @ 10V	1060pF @ 25V	±20V	-	150W (Tc)	240 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTD60N03-001	ON Semiconductor	MOSFET N-CH 28V 60A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,864	MOSFET (Metal Oxide)	28V	60A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 4.5V	2150pF @ 24V	±20V	-	75W (Tc)	7.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTGS3455T1	ON Semiconductor	MOSFET P-CH 30V 2.5A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock100,800	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	480pF @ 5V	±20V	-	500mW (Ta)	100 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
RDN100N20FU6	Rohm Semiconductor	MOSFET N-CH 200V 10A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,924	MOSFET (Metal Oxide)	200V	10A (Ta)	10V	4V @ 1mA	30nC @ 10V	543pF @ 10V	±30V	-	35W (Tc)	360 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
TK7A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 7A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,200	MOSFET (Metal Oxide)	600V	7A (Ta)	10V	3.7V @ 350µA	15nC @ 10V	490pF @ 300V	±30V	Super Junction	30W (Tc)	600 mOhm @ 3.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
PSMN3R5-80ES,127	Nexperia USA Inc.	MOSFET N-CH 80V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 338W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,440	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4V @ 1mA	139nC @ 10V	9800pF @ 30V	±20V	-	338W (Tc)	3.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRLZ34SPBF	Vishay Siliconix	MOSFET N-CH 60V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,384	MOSFET (Metal Oxide)	60V	30A (Tc)	4V, 5V	2V @ 250µA	35nC @ 5V	1600pF @ 25V	±10V	-	3.7W (Ta), 88W (Tc)	50 mOhm @ 18A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD5NK60ZT4	STMicroelectronics	MOSFET N-CH 600V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock914,652	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	4.5V @ 50µA	34nC @ 10V	690pF @ 25V	±30V	-	90W (Tc)	1.6 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
TPH3205WSBQA	Transphorm	GAN FET 650V 35A TO247 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.6V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 400V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 22A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock22,224	GaNFET (Gallium Nitride)	650V	35A (Tc)	-	2.6V @ 700µA	42nC @ 8V	2200pF @ 400V	±18V	-	125W (Tc)	62 mOhm @ 22A, 8V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXTN200N10L2	IXYS	MOSFET N-CH 100V 178A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 178A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,752	MOSFET (Metal Oxide)	100V	178A	10V	4.5V @ 3mA	540nC @ 10V	23000pF @ 25V	±20V	-	830W (Tc)	11 mOhm @ 100A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
STW9N150	STMicroelectronics	MOSFET N-CH 1500V 8A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3255pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock93,696	MOSFET (Metal Oxide)	1500V	8A (Tc)	10V	5V @ 250µA	89.3nC @ 10V	3255pF @ 25V	±30V	-	320W (Tc)	2.5 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
TSM650P03CX	Taiwan Semiconductor Corporation	-30V, -4.1A, SINGLE P-CHANNEL PO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	4.1A (Tc)	2.5V, 10V	900mV @ 250µA	8 nC @ 4.5 V	810 pF @ 15 V	±12V	-	1.56W (Tc)	65mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IXFX130N65X3	IXYS	DISCRETE MOSFET 130A 650V X3 PLU FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CSD18511KCS	Texas Instruments	MOSFET N-CH 40V 194A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 194A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock2,661	MOSFET (Metal Oxide)	40 V	194A (Ta)	4.5V, 10V	2.4V @ 250µA	64 nC @ 10 V	5940 pF @ 20 V	±20V	-	188W (Ta)	2.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
NTMFS6H858NLT1G	onsemi	T8 80V LL SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,215	MOSFET (Metal Oxide)	80 V	8.7A (Ta), 30A (Tc)	4.5V, 10V	2V @ 30µA	6 nC @ 4.5 V	623 pF @ 40 V	±20V	-	3.5W (Ta), 42W (Tc)	19.5mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SQ4840EY-T1_BE3	Vishay Siliconix	MOSFET N-CH 40V 20.7A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.1W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock7,494	MOSFET (Metal Oxide)	40 V	20.7A (Tc)	4.5V, 10V	2.5V @ 250µA	62 nC @ 10 V	2440 pF @ 20 V	±20V	-	7.1W (Tc)	9mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
DMN2991UFZQ-7B	Diodes Incorporated	MOSFET BVDSS: 8V~24V X2-DFN0606- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 450mW (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0606-3 Package / Case: 3-XFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	550mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.28 nC @ 4.5 V	14.6 pF @ 16 V	±8V	-	450mW (Ta)	990mOhm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN0606-3	3-XFDFN
2N7002-HAMR	Nexperia USA Inc.	MOSFET N-CH 60V 300MA TO236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock158,157	MOSFET (Metal Oxide)	60 V	300mA (Tc)	4.5V, 10V	2.5V @ 250µA	-	50 pF @ 10 V	±30V	-	830mW (Tc)	5Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
PSMB032N08NS1_R2_00601	Panjit International Inc.	80V/ 3.4MOHM / MV MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 161A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,310	MOSFET (Metal Oxide)	80 V	161A (Tc)	7V, 10V	3.75V @ 250µA	76 nC @ 7 V	7430 pF @ 40 V	±20V	-	156W (Tc)	3.4mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMTH47M2LFVWQ-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V PowerDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 881 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 37.5W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	13.6A (Ta), 49A (Tc)	4.5V, 10V	2.3V @ 250µA	12.3 nC @ 10 V	881 pF @ 20 V	±20V	-	2.9W (Ta), 37.5W (Tc)	8.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
SQJ886EP-T1_BE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	65 nC @ 10 V	2922 pF @ 20 V	±20V	-	55W (Tc)	4.5mOhm @ 15.3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
RJK1525DPS-00-T2	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI7792DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 40.6A/60A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 15 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	40.6A (Ta), 60A (Tc)	4.5V, 10V	2.5V @ 250µA	135 nC @ 10 V	4735 pF @ 15 V	±20V	Schottky Diode (Body)	6.25W (Ta), 104W (Tc)	2.1mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPB65R095C7ATMA2	Infineon Technologies	MOSFET N-CH 650V 24A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock10,197	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4V @ 590µA	45 nC @ 10 V	2140 pF @ 400 V	±20V	-	128W (Tc)	95mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP048N12N3GXKSA1	Infineon Technologies	MOSFET N-CH 120V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Stock4,095	MOSFET (Metal Oxide)	120 V	100A (Tc)	10V	4V @ 230µA	182 nC @ 10 V	12000 pF @ 60 V	±20V	-	300W (Tc)	4.8mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3