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Infineon Technologies |
MOSFET N-CH 100V 10.5A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 21µA
- Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: P-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock36,000 |
|
MOSFET (Metal Oxide) | 100V | 10.5A (Tc) | 10V | 4V @ 21µA | 18.3nC @ 10V | 400pF @ 25V | ±20V | - | 50W (Tc) | 170 mOhm @ 7.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | P-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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|
Infineon Technologies |
MOSFET N-CH 30V 50A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
|
Package: TO-251-3 Stub Leads, IPak |
Stock3,488 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 20µA | 13nC @ 5V | 1600pF @ 15V | ±20V | - | 58W (Tc) | 9.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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|
Renesas Electronics America |
MOSFET N-CH 40V 89A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Full Pack, I2Pak
|
Package: TO-262-3 Full Pack, I2Pak |
Stock3,504 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 102nC @ 10V | 5850pF @ 25V | ±20V | - | 1.8W (Ta), 147W (Tc) | 3.3 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Full Pack, I2Pak |
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|
IXYS |
MOSFET N-CH 100V 60A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 55A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
|
Package: ISOPLUS220? |
Stock2,288 |
|
MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 5V @ 4mA | 110nC @ 10V | 3550pF @ 25V | ±20V | - | 120W (Tc) | 17 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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ON Semiconductor |
MOSFET N-CH 60V 15A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock17,712 |
|
MOSFET (Metal Oxide) | 60V | 15A (Ta) | 5V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±15V | - | 1.5W (Ta), 48W (Tj) | 100 mOhm @ 7.5A, 5V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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|
Infineon Technologies |
MOSFET N CH 75V 56A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3107pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,064 |
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MOSFET (Metal Oxide) | 75V | 56A (Tc) | 6V, 10V | 3.7V @ 100µA | 89nC @ 10V | 3107pF @ 25V | ±20V | - | 99W (Tc) | 11.2 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 60A DPAK-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7760pF @ 10V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 30A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,560 |
|
MOSFET (Metal Oxide) | 60V | 60A (Ta) | 6V, 10V | 3V @ 1mA | 156nC @ 10V | 7760pF @ 10V | +10V, -20V | - | 100W (Tc) | 11.2 mOhm @ 30A, 10V | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock40,800 |
|
MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 4.5V @ 250µA | 23nC @ 10V | 510pF @ 25V | ±30V | - | 74W (Tc) | 2.2 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Diodes Incorporated |
MOSFET P-CH 250V 0.26A DFN2020-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 25V
- Vgs (Max): ±40V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-UDFN Exposed Pad
|
Package: 6-UDFN Exposed Pad |
Stock4,224 |
|
MOSFET (Metal Oxide) | 250V | 260mA (Ta) | 3.5V, 10V | 2.5V @ 1mA | 2.8nC @ 10V | 81pF @ 25V | ±40V | - | 600mW (Ta) | 14 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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|
Infineon Technologies |
MOSFET N-CH 600V TO-252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.8A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,296 |
|
MOSFET (Metal Oxide) | 600V | 10.3A (Tc) | 10V | 3.5V @ 300µA | 32nC @ 10V | 700pF @ 100V | ±20V | - | 83W (Tc) | 400 mOhm @ 3.8A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 30V 14A 8DSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock144,060 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 2V @ 250µA | 55nC @ 10V | 4300pF @ 15V | ±20V | - | 1.56W (Ta) | 5.1 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 25V 0.95A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock1,449,624 |
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MOSFET (Metal Oxide) | 25V | 950mA (Ta) | 2.7V, 4.5V | 1.5V @ 250µA | 2.3nC @ 4.5V | 50pF @ 10V | ±8V | - | 750mW (Ta) | 450 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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STMicroelectronics |
MOSFET N-CH 650V 10A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock25,698 |
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MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 590pF @ 100V | ±25V | - | 110W (Tc) | 430 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Microsemi Corporation |
MOSFET N-CH 100V 860A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 860A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 2100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 60000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2500W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 275A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
|
Package: SP6 |
Stock5,824 |
|
MOSFET (Metal Oxide) | 100V | 860A | 10V | 4V @ 12mA | 2100nC @ 10V | 60000pF @ 25V | ±30V | - | 2500W (Tc) | 1.6 mOhm @ 275A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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ON Semiconductor |
MOSFET P-CH 30V 6.6A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,076,964 |
|
MOSFET (Metal Oxide) | 30V | 6.6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 55nC @ 10V | 3100pF @ 24V | ±20V | - | 840mW (Ta) | 12 mOhm @ 11.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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|
Nexperia USA Inc. |
MOSFET N-CH 60V 44A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock5,232 |
|
MOSFET (Metal Oxide) | 60V | 44A (Tc) | 10V | 4V @ 1mA | 20nC @ 10V | 1172pF @ 30V | ±20V | - | 74W (Tc) | 15.7 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 50A, 66V,T
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock12,618 |
|
MOSFET (Metal Oxide) | 65 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 10 V | 1210 pF @ 30 V | ±20V | - | 53W (Tc) | 8.8mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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|
Goford Semiconductor |
MOSFET N-CH 100V 362A TOLL-8
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 362A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: -
|
Package: - |
Stock6,000 |
|
MOSFET (Metal Oxide) | - | 362A (Tc) | 10V | 4.5V @ 250µA | 165 nC @ 10 V | 10037 pF @ 50 V | ±20V | - | - | 1.6mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL | - |
|
|
Harris Corporation |
P-CHANNEL POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 10A (Tc) | 10V | 4V @ 250µA | 45 nC @ 10 V | 500 pF @ 25 V | ±20V | - | 75W (Tc) | 400mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
650V, 70A, 4-PIN THD, TRENCH-STR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 262W
- Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,344 |
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MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | 1526 pF @ 500 V | +22V, -4V | - | 262W | 39mOhm @ 27A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Harris Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip
- Package / Case: 4-DIP (0.300", 7.62mm)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 1.3A (Tc) | 10V | 4V @ 250µA | 15 nC @ 10 V | 450 pF @ 25 V | ±20V | - | 1W (Tc) | 300mOhm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip | 4-DIP (0.300", 7.62mm) |
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Nexperia USA Inc. |
PSMP033-60YE/SOT669/LFPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Ta)
- Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: - |
Stock2,424 |
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MOSFET (Metal Oxide) | 60 V | 30A (Ta) | 4.5V, 10V | 3V @ 250µA | 69 nC @ 10 V | 2590 pF @ 30 V | ±20V | - | 110W (Ta) | 33mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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IXYS |
MOSFET N-CH 300V 56A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: - |
Stock4,026 |
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MOSFET (Metal Oxide) | 300 V | 56A (Tc) | 10V | 4.5V @ 1.5mA | 56 nC @ 10 V | 3750 pF @ 25 V | ±20V | - | 320W (Tc) | 27mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Infineon Technologies |
MOSFET 100V 170A DIE
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 9mOhm @ 170A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 170A | 10V | - | - | - | - | - | - | 9mOhm @ 170A, 10V | - | Surface Mount | Die | Die |
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Micro Commercial Co |
MOSFET N-CH DFN3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Tj)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock23,460 |
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MOSFET (Metal Oxide) | 100 V | 15A (Ta) | 4.5V, 10V | 3V @ 250µA | 32 nC @ 10 V | 2270 pF @ 50 V | ±20V | - | 3.8W (Tj) | 9.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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onsemi |
MOSFET P-CH 40V 11.3A/49A 8WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 420µA
- Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
- Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: - |
Stock4,461 |
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MOSFET (Metal Oxide) | 40 V | 11.3A (Ta), 49A (Tc) | 4.5V, 10V | 2.4V @ 420µA | 26.5 nC @ 10 V | 1734 pF @ 20 V | ±20V | - | 3.2W (Ta), 61W (Tc) | 13.8mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 139mOhm @ 9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock99 |
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MOSFET (Metal Oxide) | 300 V | 18A (Ta) | 10V | 3.5V @ 1mA | 60 nC @ 10 V | 2600 pF @ 100 V | ±20V | - | 45W (Tc) | 139mOhm @ 9A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 80 V (D-S)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8W
- Package / Case: PowerPAK® 1212-8W
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Package: - |
Stock44,121 |
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MOSFET (Metal Oxide) | 80 V | 12A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.6 nC @ 10 V | 580 pF @ 25 V | ±20V | - | 27W (Tc) | 46mOhm @ 3.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8W | PowerPAK® 1212-8W |