Page 1392 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRLZ44ZSTRL
Infineon Technologies

MOSFET N-CH 55V 51A D2PAK

Package: -

Stock7,712
IPI60R299CPXKSA1
Infineon Technologies

MOSFET N-CH 600V 11A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,824
IRLR3103TRLPBF
Infineon Technologies

MOSFET N-CH 30V 55A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock55,884
BSS192PE6327
Infineon Technologies

MOSFET P-CH 250V 0.19A SOT-89

Package: TO-243AA

Stock2,128
GP1M008A025CG
Global Power Technologies Group

MOSFET N-CH 250V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,712
APT5518BFLLG
Microsemi Corporation

MOSFET N-CH 550V 31A TO-247

Package: TO-247-3

Stock6,352
PSMN005-55P,127
NXP

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock5,856
NTLUS3C18PZTBG
ON Semiconductor

MOSFET P-CH 12V 4.4A 6UDFN

Package: 6-PowerUFDFN

Stock6,592
SIHD3N50D-GE3
Vishay Siliconix

MOSFET N-CH 500V 3A TO252 DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,712
AO4403
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock11,130,936
TSM9435CS RLG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -30V,

Package: 8-SOIC (0.154", 3.90mm Width)

Stock8,736
FDMC3612
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8-MLP

Package: 8-PowerWDFN

Stock86,400
EKI04036
Sanken

MOSFET N-CH 40V 80A TO-220

Package: TO-220-3

Stock7,068
STI6N90K5
STMicroelectronics

N-CHANNEL 900 V, 2.1 OHM TYP., 3

Package: TO-262-3 Full Pack, I2Pak

Stock6,552
IPB80N04S303ATMA1
Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,208
2SK2034TE85LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 100MA USM

Package: SC-70, SOT-323

Stock5,904
C3M0280090J
Cree/Wolfspeed

MOSFET N-CH 900V 11A

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock18,312
STN6N60M2
STMicroelectronics

MOSFET N-CH 600V 5.5A SOT223-2

Package: -

Stock8,301
IXTH240N15X4
IXYS

MOSFET N-CH 150V 240A TO247

Package: -

Stock5,286
APT8043BLLG
Microchip Technology

MOSFET N-CH 800V 20A TO247

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRLZ44ZSTRL	Infineon Technologies	MOSFET N-CH 55V 51A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	Package: -	Stock7,712	-	-	-	4.5V, 10V	-	-	-	±16V	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	-	-
IPI60R299CPXKSA1	Infineon Technologies	MOSFET N-CH 600V 11A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,824	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	3.5V @ 440µA	29nC @ 10V	1100pF @ 100V	±20V	-	96W (Tc)	299 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRLR3103TRLPBF	Infineon Technologies	MOSFET N-CH 30V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock55,884	MOSFET (Metal Oxide)	30V	55A (Tc)	4.5V, 10V	1V @ 250µA	50nC @ 4.5V	1600pF @ 25V	±16V	-	107W (Tc)	19 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSS192PE6327	Infineon Technologies	MOSFET P-CH 250V 0.19A SOT-89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	Package: TO-243AA	Stock2,128	MOSFET (Metal Oxide)	250V	190mA (Ta)	2.8V, 10V	2V @ 130µA	6.1nC @ 10V	104pF @ 25V	±20V	-	1W (Ta)	12 Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89	TO-243AA
GP1M008A025CG	Global Power Technologies Group	MOSFET N-CH 250V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 423pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,712	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	5V @ 250µA	8.4nC @ 10V	423pF @ 25V	±30V	-	52W (Tc)	600 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
APT5518BFLLG	Microsemi Corporation	MOSFET N-CH 550V 31A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3286pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 403W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 15.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,352	MOSFET (Metal Oxide)	550V	31A (Tc)	10V	5V @ 1mA	67nC @ 10V	3286pF @ 25V	±30V	-	403W (Tc)	180 mOhm @ 15.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
PSMN005-55P,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,856	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	103nC @ 5V	6500pF @ 25V	±15V	-	230W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTLUS3C18PZTBG	ON Semiconductor	MOSFET P-CH 12V 4.4A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock6,592	MOSFET (Metal Oxide)	12V	4.4A (Ta)	1.8V, 4.5V	1V @ 250µA	15.8nC @ 4.5V	1570pF @ 6V	±8V	-	660mW (Ta)	24 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
SIHD3N50D-GE3	Vishay Siliconix	MOSFET N-CH 500V 3A TO252 DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,712	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	5V @ 250µA	12nC @ 10V	175pF @ 100V	±30V	-	69W (Tc)	3.2 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
AO4403	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 6A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1128pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 46 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock11,130,936	MOSFET (Metal Oxide)	30V	6A (Ta)	2.5V, 10V	1.3V @ 250µA	11.3nC @ 4.5V	1128pF @ 15V	±12V	-	3.1W (Ta)	46 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TSM9435CS RLG	TSC America Inc.	MOSFET, SINGLE, P-CHANNEL, -30V, FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 551.57pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.3W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock8,736	MOSFET (Metal Oxide)	30V	5.3A (Tc)	4.5V, 10V	3V @ 250µA	27nC @ 10V	551.57pF @ 15V	±20V	-	5.3W (Tc)	60 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
FDMC3612	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock86,400	MOSFET (Metal Oxide)	100V	3.3A (Ta), 16A (Tc)	6V, 10V	4V @ 250µA	21nC @ 10V	880pF @ 50V	±20V	-	2.3W (Ta), 35W (Tc)	110 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
EKI04036	Sanken	MOSFET N-CH 40V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 63.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3910pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 116W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 58.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,068	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2.5V @ 1mA	63.2nC @ 10V	3910pF @ 25V	±20V	-	116W (Tc)	3.8 mOhm @ 58.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STI6N90K5	STMicroelectronics	N-CHANNEL 900 V, 2.1 OHM TYP., 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock6,552	MOSFET (Metal Oxide)	900V	6A	10V	5V @ 100µA	-	-	±30V	Current Sensing	-	-	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Full Pack, I2Pak
IPB80N04S303ATMA1	Infineon Technologies	MOSFET N-CH 40V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,208	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 120µA	110nC @ 10V	7300pF @ 25V	±20V	-	188W (Tc)	3.2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK2034TE85LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 100MA USM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock5,904	MOSFET (Metal Oxide)	20V	100mA (Ta)	2.5V	-	-	8.5pF @ 3V	10V	-	100mW (Ta)	12 Ohm @ 10mA, 2.5V	150°C (TJ)	Surface Mount	SC-70	SC-70, SOT-323
C3M0280090J	Cree/Wolfspeed	MOSFET N-CH 900V 11A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock18,312	SiCFET (Silicon Carbide)	900V	11A (Tc)	15V	3.5V @ 1.2mA	9.5nC @ 15V	150pF @ 600V	+18V, -8V	-	50W (Tc)	360 mOhm @ 7.5A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
STN6N60M2	STMicroelectronics	MOSFET N-CH 600V 5.5A SOT223-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-2 Package / Case: TO-261-3	Package: -	Stock8,301	MOSFET (Metal Oxide)	600 V	5.5A (Tc)	10V	4V @ 250µA	6.2 nC @ 10 V	220 pF @ 100 V	±25V	-	6W (Tc)	1.25Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-2	TO-261-3
IXTH240N15X4	IXYS	MOSFET N-CH 150V 240A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 940W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock5,286	MOSFET (Metal Oxide)	150 V	240A (Tc)	10V	4.5V @ 250µA	195 nC @ 10 V	8900 pF @ 25 V	±20V	-	940W (Tc)	4.4mOhm @ 120A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
APT8043BLLG	Microchip Technology	MOSFET N-CH 800V 20A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	20A (Tc)	-	5V @ 1mA	85 nC @ 10 V	2500 pF @ 25 V	-	-	-	430mOhm @ 5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
DMTH43M8LFVWQ-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2737 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	23A (Ta), 96A (Tc)	4.5V, 10V	2.5V @ 250µA	36.9 nC @ 10 V	2737 pF @ 20 V	±20V	-	3.6W (Ta), 65W (Tc)	4.3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
SISH536DN-T1-GE3	Vishay Siliconix	N-CHANNEL 30 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 67.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	Package: -	Stock31,416	MOSFET (Metal Oxide)	30 V	24.7A (Ta), 67.4A (Tc)	4.5V, 10V	2.2V @ 250µA	25 nC @ 10 V	1150 pF @ 15 V	+16V, -12V	-	3.57W (Ta), 26.5W (Tc)	3.25mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
DMP3027LFDE-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-PowerUDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8.5A (Ta)	4.5V, 10V	2.4V @ 250µA	21.8 nC @ 10 V	1142 pF @ 15 V	±20V	-	1W (Ta)	25mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-PowerUDFN
BSO613SPVGHUMA1	Infineon Technologies	MOSFET P-CH 60V 3.44A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	3.44A (Ta)	10V	4V @ 1mA	30 nC @ 10 V	875 pF @ 25 V	±20V	-	2.5W (Ta)	130mOhm @ 3.44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
NVTFS6H850NTAG	onsemi	MOSFET N-CH 80V 11A/68A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock2,190	MOSFET (Metal Oxide)	80 V	11A (Ta), 68A (Tc)	10V	4V @ 70µA	19 nC @ 10 V	1140 pF @ 40 V	±20V	-	3.2W (Ta), 107W (Tc)	9.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IXFN32N120	IXYS	MOSFET N-CH 1200V 32A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 32A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	32A	-	5V @ 8mA	400 nC @ 10 V	15900 pF @ 25 V	-	-	-	350mOhm @ 500mA, 10V	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
PMN27XPEA-115	Nexperia USA Inc.	MOSFET P-CH 4.4A 20V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 530mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4.4A (Ta)	2.5V, 4.5V	1.25V @ 250µA	22.5 nC @ 4.5 V	1770 pF @ 10 V	±12V	-	530mW (Ta), 8.33W (Tc)	30mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
IRL620PBF-BE3	Vishay Siliconix	MOSFET N-CH 200V 5.2A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock240	MOSFET (Metal Oxide)	200 V	5.2A (Tc)	-	2V @ 250µA	16 nC @ 5 V	360 pF @ 25 V	±10V	-	50W (Tc)	800mOhm @ 3.1A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3