Page 1393 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB260N06N3GATMA1
Infineon Technologies

MOSFET N-CH 60V 27A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,248
IRLR3715ZTRR
Infineon Technologies

MOSFET N-CH 20V 49A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,920
IRFR1205TRL
Infineon Technologies

MOSFET N-CH 55V 44A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,504
IRF7607
Infineon Technologies

MOSFET N-CH 20V 6.5A MICRO-8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock30,576
AOD4185L_003
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 40A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,704
BUK9506-55A,127
NXP

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock6,224
IRF730
Vishay Siliconix

MOSFET N-CH 400V 5.5A TO-220AB

Package: TO-220-3

Stock18,048
BUK9512-55B,127
Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock7,392
APT43M60B2
Microsemi Corporation

MOSFET N-CH 600V 45A T-MAX

Package: TO-247-3 Variant

Stock5,760
IPI040N06N3GXKSA1
Infineon Technologies

MOSFET N-CH 60V 90A

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock12,018
FDY101PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 0.15A SC-89

Package: SC-89, SOT-490

Stock29,460
IRFBC40ASPBF
Vishay Siliconix

MOSFET N-CH 600V 6.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock71,964
IRFP23N50LPBF
Vishay Siliconix

MOSFET N-CH 500V 23A TO-247AC

Package: TO-247-3

Stock5,696
FDD8880
Fairchild/ON Semiconductor

MOSFET N-CH 30V 58A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock605,928
STN2NF10
STMicroelectronics

MOSFET N-CH 100V 2.4A SOT-223

Package: TO-261-4, TO-261AA

Stock1,763,556
APT5010B2VRG
Microchip Technology

MOSFET N-CH 500V 47A T-MAX

Package: -

Request a Quote
RJK0366DPA-02-J0B
Renesas Electronics Corporation

MOSFET N-CH 30V 25A 8WPAK

Package: -

Request a Quote
NVMJS0D9N04CTWG
onsemi

MOSFET N-CH 40V 52A/342A 8LFPAK

Package: -

Request a Quote
BUK9Y19-55B-C2-115
Nexperia USA Inc.

MOSFET N-CH 55V 46A LFPAK56

Package: -

Request a Quote
IPL60R385CPAUMA1
Infineon Technologies

MOSFET N-CH 600V 9A 4VSON

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB260N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 27A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 25.7 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,248	MOSFET (Metal Oxide)	60V	27A (Tc)	10V	4V @ 11µA	15nC @ 10V	1200pF @ 30V	±20V	-	36W (Tc)	25.7 mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR3715ZTRR	Infineon Technologies	MOSFET N-CH 20V 49A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,920	MOSFET (Metal Oxide)	20V	49A (Tc)	4.5V, 10V	2.55V @ 250µA	11nC @ 4.5V	810pF @ 10V	±20V	-	40W (Tc)	11 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR1205TRL	Infineon Technologies	MOSFET N-CH 55V 44A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,504	MOSFET (Metal Oxide)	55V	44A (Tc)	10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	±20V	-	107W (Tc)	27 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7607	Infineon Technologies	MOSFET N-CH 20V 6.5A MICRO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock30,576	MOSFET (Metal Oxide)	20V	6.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	22nC @ 5V	1310pF @ 15V	±12V	-	1.8W (Ta)	30 mOhm @ 6.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
AOD4185L_003	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 40A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,704	MOSFET (Metal Oxide)	40V	40A (Tc)	4.5V, 10V	3V @ 250µA	18.6nC @ 4.5V	2550pF @ 20V	±20V	-	62.5W (Tc)	15 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9506-55A,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,224	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	-	8600pF @ 25V	±15V	-	300W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF730	Vishay Siliconix	MOSFET N-CH 400V 5.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock18,048	MOSFET (Metal Oxide)	400V	5.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	700pF @ 25V	±20V	-	74W (Tc)	1 Ohm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9512-55B,127	Nexperia USA Inc.	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3693pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,392	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	31nC @ 5V	3693pF @ 25V	±15V	-	157W (Tc)	10 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
APT43M60B2	Microsemi Corporation	MOSFET N-CH 600V 45A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock5,760	MOSFET (Metal Oxide)	600V	45A (Tc)	10V	5V @ 2.5mA	215nC @ 10V	8590pF @ 25V	±30V	-	780W (Tc)	150 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
IPI040N06N3GXKSA1	Infineon Technologies	MOSFET N-CH 60V 90A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock12,018	MOSFET (Metal Oxide)	60V	90A (Tc)	10V	4V @ 90µA	98nC @ 10V	11000pF @ 30V	±20V	-	188W (Tc)	4 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
FDY101PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 0.15A SC-89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock29,460	MOSFET (Metal Oxide)	20V	150mA (Ta)	1.5V, 4.5V	1.5V @ 250µA	1.4nC @ 4.5V	100pF @ 10V	±8V	-	625mW (Ta)	8 Ohm @ 150mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
IRFBC40ASPBF	Vishay Siliconix	MOSFET N-CH 600V 6.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1036pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock71,964	MOSFET (Metal Oxide)	600V	6.2A (Tc)	10V	4V @ 250µA	42nC @ 10V	1036pF @ 25V	±30V	-	125W (Tc)	1.2 Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFP23N50LPBF	Vishay Siliconix	MOSFET N-CH 500V 23A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,696	MOSFET (Metal Oxide)	500V	23A (Tc)	10V	5V @ 250µA	150nC @ 10V	3600pF @ 25V	±30V	-	370W (Tc)	235 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
FDD8880	Fairchild/ON Semiconductor	MOSFET N-CH 30V 58A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock605,928	MOSFET (Metal Oxide)	30V	13A (Ta), 58A (Tc)	4.5V, 10V	2.5V @ 250µA	31nC @ 10V	1260pF @ 15V	±20V	-	55W (Tc)	9 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
STN2NF10	STMicroelectronics	MOSFET N-CH 100V 2.4A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,763,556	MOSFET (Metal Oxide)	100V	2.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	280pF @ 25V	±20V	-	3.3W (Tc)	260 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
APT5010B2VRG	Microchip Technology	MOSFET N-CH 500V 47A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	47A (Tc)	-	4V @ 2.5mA	470 nC @ 10 V	8900 pF @ 25 V	-	-	-	100mOhm @ 500mA, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
RJK0366DPA-02-J0B	Renesas Electronics Corporation	MOSFET N-CH 30V 25A 8WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-WFDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	25A (Ta)	-	-	6.8 nC @ 4.5 V	1010 pF @ 10 V	-	-	30W (Tc)	10mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-WFDFN Exposed Pad
NVMJS0D9N04CTWG	onsemi	MOSFET N-CH 40V 52A/342A 8LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 342A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	52A (Ta), 342A (Tc)	10V	4V @ 250µA	117 nC @ 10 V	7400 pF @ 20 V	20V	-	4.2W (Ta), 180W (Tc)	0.81mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-LFPAK	SOT-1205, 8-LFPAK56
BUK9Y19-55B-C2-115	Nexperia USA Inc.	MOSFET N-CH 55V 46A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 46A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1992 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 17.3mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	46A	-	2V @ 1mA	18 nC @ 5 V	1992 pF @ 25 V	-	-	-	17.3mOhm @ 20A, 10V	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IPL60R385CPAUMA1	Infineon Technologies	MOSFET N-CH 600V 9A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	3.5V @ 340µA	17 nC @ 10 V	790 pF @ 100 V	±20V	-	83W (Tc)	385mOhm @ 5.2A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
NP60N06PDK-E1-AY	Renesas Electronics Corporation	MOSFET TRANSISTOR MORE 1 W FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 105W Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	60A	4.5V, 10V	2.5V @ 250µA	56 nC @ 10 V	3600 pF @ 25 V	±20V	-	105W	12mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	TO-263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVTFS5C471NLTAG	onsemi	MOSFET N-CHANNEL 40V 41A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock3,270	MOSFET (Metal Oxide)	40 V	41A (Tc)	4.5V, 10V	2.2V @ 20µA	12 nC @ 10 V	660 pF @ 25 V	±20V	-	30W (Tc)	9mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IRFH7110TR2PBF	Infineon Technologies	MOSFET N CH 100V 11A PQFN5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-TQFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	11A (Ta), 58A (Tc)	-	4V @ 100µA	87 nC @ 10 V	3240 pF @ 25 V	-	-	-	13.5mOhm @ 35A, 10V	-	Surface Mount	8-PQFN (5x6)	8-TQFN Exposed Pad
SI4459BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 20.5A/27.8A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock42,897	MOSFET (Metal Oxide)	30 V	20.5A (Ta), 27.8A (Tc)	4.5V, 10V	2.2V @ 250µA	84 nC @ 10 V	3490 pF @ 15 V	+20V, -16V	-	3.1W (Ta), 5.6W (Tc)	4.9mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AONS66917	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 215W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock6,687	MOSFET (Metal Oxide)	100 V	100A (Tc)	4.5V, 10V	2.8V @ 250µA	115 nC @ 10 V	5940 pF @ 50 V	±20V	-	6.2W (Ta), 215W (Tc)	3.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
BSS123Q-13	Diodes Incorporated	BSS FAMILY SOT23 T&R 10K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock90,921	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	2V @ 1mA	-	60 pF @ 25 V	±20V	-	300mW (Ta)	6Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
APT6017B2LLG	Microsemi Corporation	MOSFET N-CH 600V 35A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	35A (Tc)	10V	5V @ 2.5mA	100 nC @ 10 V	4500 pF @ 25 V	±30V	-	500W (Tc)	170mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
STS2300S-ML	MOSLEADER	Single-N 20V 6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-