Page 1395 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPP80N06S2L-09
Infineon Technologies

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock3,456
IPF10N03LA
Infineon Technologies

MOSFET N-CH 25V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012
APT1002RBNG
Microsemi Corporation

MOSFET N-CH 1KV 8A TO247AD

Package: TO-247-3

Stock2,464
PHL5830AL,115
NXP

MOSFET N-CH 30V 8HVSON

Package: -

Stock4,192
IXKC13N80C
IXYS

MOSFET N-CH 800V 13A ISOPLUS220

Package: ISOPLUS220?

Stock5,008
IRL3102L
Vishay Siliconix

MOSFET N-CH 20V 61A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,880
IXFA18N60X
IXYS

MOSFET N-CH 600V 18A TO-263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,912
TP2104N3-G-P003
Microchip Technology

MOSFET P-CH 40V 0.175A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,280
R6030KNZC8
Rohm Semiconductor

NCH 600V 30A POWER MOSFET

Package: TO-3P-3 Full Pack

Stock9,660
STF16NF25
STMicroelectronics

MOSFET N-CH 250V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock176,808
STI18N65M2
STMicroelectronics

MOSFET N-CH 650V 12A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock16,584
IRFR3411TRPBF
Infineon Technologies

MOSFET N-CH 100V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock137,880
FCP104N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 37A TO-220

Package: TO-220-3

Stock14,304
DMP3008SFGQ-13
Diodes Incorporated

MOSFET P-CH 30V 8.6A PWRDI3333-8

Package: 8-PowerWDFN

Stock2,176
IRLR2905ZPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,492
DMP21D0UFD-7
Diodes Incorporated

MOSFET P-CH 20V 820MA 3DFN

Package: 3-UDFN

Stock25,572
FQA70N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 70A TO-3P

Package: TO-3P-3, SC-65-3

Stock6,288
RQ3E120ATTB
Rohm Semiconductor

MOSFET P-CH 30V 12A HSMT8

Package: 8-PowerVDFN

Stock28,284
IXTP96P085T
IXYS

MOSFET P-CH 85V 96A TO-220

Package: TO-220-3

Stock20,544
AIMZA75R040M1HXKSA1
Infineon Technologies

IGBT

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP80N06S2L-09	Infineon Technologies	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,456	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 125µA	105nC @ 10V	3480pF @ 25V	±20V	-	190W (Tc)	8.5 mOhm @ 52A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPF10N03LA	Infineon Technologies	MOSFET N-CH 25V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	25V	30A (Tc)	4.5V, 10V	2V @ 20µA	11nC @ 5V	1358pF @ 15V	±20V	-	52W (Tc)	10.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
APT1002RBNG	Microsemi Corporation	MOSFET N-CH 1KV 8A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock2,464	MOSFET (Metal Oxide)	1000V	8A (Tc)	10V	4V @ 1mA	105nC @ 10V	1800pF @ 25V	±30V	-	240W (Tc)	1.6 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
PHL5830AL,115	NXP	MOSFET N-CH 30V 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,192	MOSFET (Metal Oxide)	30V	-	-	-	-	-	-	-	-	-	-	-	-	-
IXKC13N80C	IXYS	MOSFET N-CH 800V 13A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 290 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,008	MOSFET (Metal Oxide)	800V	13A (Tc)	10V	4V @ 1mA	90nC @ 10V	2300pF @ 25V	±20V	Super Junction	-	290 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IRL3102L	Vishay Siliconix	MOSFET N-CH 20V 61A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,880	MOSFET (Metal Oxide)	20V	61A (Tc)	4.5V, 7V	700mV @ 250µA	58nC @ 4.5V	2500pF @ 15V	±10V	-	89W (Tc)	13 mOhm @ 37A, 7V	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFA18N60X	IXYS	MOSFET N-CH 600V 18A TO-263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,912	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4.5V @ 1.5mA	35nC @ 10V	1440pF @ 25V	±30V	-	320W (Tc)	230 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TP2104N3-G-P003	Microchip Technology	MOSFET P-CH 40V 0.175A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,280	MOSFET (Metal Oxide)	40V	175mA (Tj)	4.5V, 10V	2V @ 1mA	-	60pF @ 25V	±20V	-	740mW (Ta)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
R6030KNZC8	Rohm Semiconductor	NCH 600V 30A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock9,660	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 1mA	56nC @ 10V	2350pF @ 25V	±20V	-	86W (Tc)	130 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
STF16NF25	STMicroelectronics	MOSFET N-CH 250V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock176,808	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	18nC @ 10V	680pF @ 25V	±20V	-	25W (Tc)	235 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STI18N65M2	STMicroelectronics	MOSFET N-CH 650V 12A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock16,584	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	20nC @ 10V	770pF @ 100V	±25V	-	110W (Tc)	330 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR3411TRPBF	Infineon Technologies	MOSFET N-CH 100V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock137,880	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4V @ 250µA	71nC @ 10V	1960pF @ 25V	±20V	-	130W (Tc)	44 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FCP104N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 37A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4165pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock14,304	MOSFET (Metal Oxide)	600V	37A (Tc)	10V	3.5V @ 250µA	82nC @ 10V	4165pF @ 380V	±20V	-	357W (Tc)	104 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
DMP3008SFGQ-13	Diodes Incorporated	MOSFET P-CH 30V 8.6A PWRDI3333-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,176	MOSFET (Metal Oxide)	30V	8.6A (Ta)	4.5V, 10V	2.1V @ 250µA	47nC @ 10V	2230pF @ 15V	±20V	-	900mW (Ta)	17 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
IRLR2905ZPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,492	MOSFET (Metal Oxide)	55V	42A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 5V	1570pF @ 25V	±16V	-	110W (Tc)	13.5 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMP21D0UFD-7	Diodes Incorporated	MOSFET P-CH 20V 820MA 3DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 495 mOhm @ 800mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1212-3 Package / Case: 3-UDFN	Package: 3-UDFN	Stock25,572	MOSFET (Metal Oxide)	20V	820mA (Ta)	1.5V, 4.5V	1.2V @ 250µA	3nC @ 4.5V	80pF @ 10V	±8V	-	490mW (Ta)	495 mOhm @ 800mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1212-3	3-UDFN
FQA70N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 70A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,288	MOSFET (Metal Oxide)	100V	70A (Tc)	10V	4V @ 250µA	110nC @ 10V	3300pF @ 25V	±25V	-	214W (Tc)	23 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
RQ3E120ATTB	Rohm Semiconductor	MOSFET P-CH 30V 12A HSMT8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock28,284	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	2.5V @ 1mA	62nC @ 10V	3200pF @ 15V	±20V	-	2W (Ta)	8 mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
IXTP96P085T	IXYS	MOSFET P-CH 85V 96A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 48A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock20,544	MOSFET (Metal Oxide)	85V	96A (Tc)	10V	4V @ 250µA	180nC @ 10V	13100pF @ 25V	±15V	-	298W (Tc)	13 mOhm @ 48A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AIMZA75R040M1HXKSA1	Infineon Technologies	IGBT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS65R045Q4A	Goford Semiconductor	SiC MOSFET N-CH 650V 51A TO-247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP80N04MHE-S18-AY	Renesas Electronics Corporation	MOSFET N-CH 40V 80A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	80A (Tc)	-	4V @ 250µA	60 nC @ 10 V	3300 pF @ 25 V	-	-	1.8W (Ta), 120W (Tc)	8mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3
PJL9433A_R2_00001	Panjit International Inc.	60V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock22,275	MOSFET (Metal Oxide)	60 V	3.2A (Ta)	4.5V, 10V	2.5V @ 250µA	10 nC @ 10 V	785 pF @ 30 V	±20V	-	2.5W (Ta)	110mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IRFH7923TRPBF	Infineon Technologies	MOSFET N-CH 30V 15A PQFN56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1095 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8.7mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15A (Ta), 33A (Tc)	-	2.35V @ 25µA	13 nC @ 4.5 V	1095 pF @ 15 V	-	-	-	8.7mOhm @ 15A, 10V	-	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
PJP7NA65_T0_00001	Panjit International Inc.	650V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7A (Ta)	10V	4V @ 250µA	16.8 nC @ 10 V	754 pF @ 25 V	±30V	-	145W (Tc)	1.5Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTT6N120-TRL	IXYS	MOSFET N-CH 1200V 6A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	6A (Tc)	10V	5V @ 250µA	56 nC @ 10 V	1950 pF @ 25 V	±20V	-	300W (Tc)	2.6Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
R6007JNXC7G	Rohm Semiconductor	MOSFET N-CH 600V 7A TO220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock6,057	MOSFET (Metal Oxide)	600 V	7A (Tc)	15V	7V @ 1mA	17.5 nC @ 15 V	475 pF @ 100 V	±30V	-	46W (Tc)	780mOhm @ 3.5A, 15V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
MCU50N06AHE3-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2515 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 59.5W (Tj) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	46 nC @ 10 V	2515 pF @ 25 V	±20V	-	59.5W (Tj)	15mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63