Page 1394 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7705TR
Infineon Technologies

MOSFET P-CH 30V 8A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock240,000
IXFT26N50Q TR
IXYS

MOSFET N-CH TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,840
AO4714
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,149,336
NTD4855N-1G
ON Semiconductor

MOSFET N-CH 25V 14A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,312
SI4336DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock961,560
IXTQ160N075T
IXYS

MOSFET N-CH 75V 160A TO-3P

Package: TO-3P-3, SC-65-3

Stock103,464
BUK7514-55A,127
NXP

MOSFET N-CH 55V 73A TO220AB

Package: TO-220-3

Stock3,760
IPA60R450E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 9.2A TO220

Package: TO-220-3 Full Pack

Stock3,024
APT23F60B
Microsemi Corporation

MOSFET N-CH 600V 23A TO-247

Package: TO-247-3

Stock2,368
NTTFS5116PLTWG
ON Semiconductor

MOSFET P-CH 60V 5.7A 8-WDFN

Package: 8-PowerWDFN

Stock6,192
AON6594
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: 8-PowerSMD, Flat Leads

Stock6,400
SIR616DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 20.2A SO8

Package: PowerPAK? SO-8

Stock4,496
SI1424EDH-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 4A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock74,400
STW8N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.60 OHM TYP.,

Package: TO-247-3

Stock6,900
TP0620N3-G
Microchip Technology

MOSFET P-CH 200V 0.175A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock21,732
IRFI9530GPBF
Vishay Siliconix

MOSFET P-CH 100V 7.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock24,000
FCB070N65S3
Fairchild/ON Semiconductor

MOSFET N-CH 650V 44A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,704
FDPF8N60ZUT
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220F-3

Package: TO-220-3 Full Pack

Stock7,296
SI4447DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 40V 3.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock61,284
RUQ050N02HZGTR
Rohm Semiconductor

MOSFET N-CH 20V 5A TSMT6

Package: -

Stock11,907

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7705TR	Infineon Technologies	MOSFET P-CH 30V 8A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock240,000	MOSFET (Metal Oxide)	30V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	88nC @ 10V	2774pF @ 25V	±20V	-	1.5W (Tc)	18 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IXFT26N50Q TR	IXYS	MOSFET N-CH TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 (IXFT) Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,840	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	4.5V @ 4mA	95nC @ 10V	3900pF @ 25V	±20V	-	300W (Tc)	200 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268 (IXFT)	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
AO4714	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 20A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4512pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,149,336	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	2.2V @ 250µA	74nC @ 10V	4512pF @ 15V	±20V	Schottky Diode (Body)	3W (Ta)	4.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTD4855N-1G	ON Semiconductor	MOSFET N-CH 25V 14A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,312	MOSFET (Metal Oxide)	25V	14A (Ta), 98A (Tc)	4.5V, 10V	2.5V @ 250µA	32.7nC @ 4.5V	2950pF @ 12V	±20V	-	1.35W (Ta), 66.7W (Tc)	4.3 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
SI4336DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock961,560	MOSFET (Metal Oxide)	30V	17A (Ta)	4.5V, 10V	3V @ 250µA	50nC @ 4.5V	5600pF @ 15V	±20V	-	1.6W (Ta)	3.25 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXTQ160N075T	IXYS	MOSFET N-CH 75V 160A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,464	MOSFET (Metal Oxide)	75V	160A (Tc)	10V	4V @ 250µA	112nC @ 10V	4950pF @ 25V	±20V	-	360W (Tc)	6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
BUK7514-55A,127	NXP	MOSFET N-CH 55V 73A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2464pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,760	MOSFET (Metal Oxide)	55V	73A (Tc)	10V	4V @ 1mA	-	2464pF @ 25V	±20V	-	166W (Tc)	14 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPA60R450E6XKSA1	Infineon Technologies	MOSFET N-CH 600V 9.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,024	MOSFET (Metal Oxide)	600V	9.2A (Tc)	10V	3.5V @ 280µA	28nC @ 10V	620pF @ 100V	±20V	-	30W (Tc)	450 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
APT23F60B	Microsemi Corporation	MOSFET N-CH 600V 23A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 415W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock2,368	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 1mA	110nC @ 10V	4415pF @ 25V	±30V	-	415W (Tc)	290 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
NTTFS5116PLTWG	ON Semiconductor	MOSFET P-CH 60V 5.7A 8-WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,192	MOSFET (Metal Oxide)	60V	5.7A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1258pF @ 30V	±20V	-	3.2W (Ta), 40W (Tc)	52 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
AON6594	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock6,400	MOSFET (Metal Oxide)	30V	22A (Ta), 35A (Tc)	4.5V, 10V	2.2V @ 250µA	22nC @ 10V	1037pF @ 15V	±20V	-	5W (Ta), 39W (Tc)	7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
SIR616DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 20.2A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 7.5V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 50.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock4,496	MOSFET (Metal Oxide)	200V	20.2A (Tc)	7.5V, 10V	4V @ 250µA	28nC @ 7.5V	1450pF @ 100V	±20V	-	52W (Tc)	50.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI1424EDH-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 4A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock74,400	MOSFET (Metal Oxide)	20V	4A (Tc)	4.5V	1V @ 250µA	18nC @ 8V	-	±8V	-	1.56W (Ta), 2.8W (Tc)	33 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-363	6-TSSOP, SC-88, SOT-363
STW8N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.60 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,900	MOSFET (Metal Oxide)	900V	-	10V	5V @ 100µA	-	-	±30V	Current Sensing	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
TP0620N3-G	Microchip Technology	MOSFET P-CH 200V 0.175A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock21,732	MOSFET (Metal Oxide)	200V	175mA (Tj)	5V, 10V	2.4V @ 1mA	-	150pF @ 25V	±20V	-	1W (Ta)	12 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRFI9530GPBF	Vishay Siliconix	MOSFET P-CH 100V 7.7A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock24,000	MOSFET (Metal Oxide)	100V	7.7A (Tc)	10V	4V @ 250µA	38nC @ 10V	860pF @ 25V	±20V	-	42W (Tc)	300 mOhm @ 4.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
FCB070N65S3	Fairchild/ON Semiconductor	MOSFET N-CH 650V 44A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,704	MOSFET (Metal Oxide)	650V	44A (Tc)	10V	4.5V @ 4.4mA	78nC @ 10V	3090pF @ 400V	±30V	-	312W (Tc)	70 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDPF8N60ZUT	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO-220F-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34.5W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,296	MOSFET (Metal Oxide)	600V	6.5A (Tc)	10V	5V @ 250µA	26nC @ 10V	1265pF @ 25V	±30V	-	34.5W (Tc)	1.35 Ohm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SI4447DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 40V 3.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 15V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock61,284	MOSFET (Metal Oxide)	40V	3.3A (Ta)	15V, 10V	2.2V @ 250µA	14nC @ 4.5V	805pF @ 20V	±16V	-	1.1W (Ta)	72 mOhm @ 4.5A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RUQ050N02HZGTR	Rohm Semiconductor	MOSFET N-CH 20V 5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock11,907	MOSFET (Metal Oxide)	20 V	5A (Ta)	1.5V, 4.5V	1V @ 1mA	12 nC @ 4.5 V	900 pF @ 10 V	±10V	-	950mW (Ta)	30mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
SISHA12ADN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 22A/25A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	Package: -	Stock8,994	MOSFET (Metal Oxide)	30 V	22A (Ta), 25A (Tc)	4.5V, 10V	2.2V @ 250µA	45 nC @ 10 V	2070 pF @ 15 V	+20V, -16V	-	3.5W (Ta), 28W (Tc)	4.3mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
G100N03D5	Goford Semiconductor	N-CH, 30V, 100A, RD(MAX)<3.5M@10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5595 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (4.9x5.75) Package / Case: 8-PowerTDFN	Package: -	Stock14,685	MOSFET (Metal Oxide)	30 V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	38 nC @ 10 V	5595 pF @ 50 V	±20V	-	50W (Tc)	3.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
SCT3105KRHRC15	Rohm Semiconductor	1200V, 24A, 4-PIN THD, TRENCH-ST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 134W Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	24A (Tc)	18V	5.6V @ 3.81mA	51 nC @ 18 V	574 pF @ 800 V	+22V, -4V	-	134W	137mOhm @ 7.6A, 18V	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
2SK1580-0-T1-AT	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA60R600P6XKSA1	Infineon Technologies	MOSFET N-CH 600V 4.9A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4.9A (Tc)	10V	4.5V @ 200µA	12 nC @ 10 V	557 pF @ 100 V	±20V	-	28W (Tc)	600mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
DMN3009LFVW-7	Diodes Incorporated	MOSFET N-CH 30V 60A POWERDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Stock26,295	MOSFET (Metal Oxide)	30 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	42 nC @ 10 V	2000 pF @ 15 V	±20V	-	1W (Ta)	5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
UF3C065040K4S	Qorvo	MOSFET N-CH 650V 54A TO247-4 FET Type: N-Channel Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 326W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock1,800	-	650 V	54A (Tc)	12V	6V @ 10mA	43 nC @ 12 V	1500 pF @ 100 V	±25V	-	326W (Tc)	52mOhm @ 40A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
NVB082N65S3F	onsemi	MOSFET N-CH 650V 40A D2PAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	5V @ 4mA	81 nC @ 10 V	3410 pF @ 400 V	±30V	-	313W (Tc)	82mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB