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Infineon Technologies |
MOSFET N-CH 30V 54A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,520 |
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MOSFET (Metal Oxide) | 30V | 54A (Tc) | 4.5V, 10V | - | 44nC @ 4.5V | 2300pF @ 25V | ±16V | - | - | 14 mOhm @ 32A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 15A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 15V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock679,704 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 32nC @ 10V | 1950pF @ 15V | ±20V | Schottky Diode (Body) | 3.1W (Ta) | 9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock3,952 |
|
MOSFET (Metal Oxide) | 100V | 40A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 48nC @ 10V | 1640pF @ 50V | ±20V | - | 5W (Ta), 62.5W (Tc) | 10.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 20V 1.3A 3SSOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 162pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,776 |
|
MOSFET (Metal Oxide) | 20V | 1.3A (Ta) | 2.7V, 4.5V | 1V @ 250µA | 5nC @ 4.5V | 162pF @ 10V | ±8V | - | 500mW (Ta) | 160 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 450V 500MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Vgs (Max): ±50V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock7,456 |
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MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 3.7V @ 250µA | 8.5nC @ 10V | 240pF @ 25V | ±50V | - | 900mW (Ta) | 4.25 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 60V 0.28A TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,320 |
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MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 18V | ±20V | - | 700mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock14,988 |
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MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 2600pF @ 25V | ±20V | - | 190W (Tc) | 400 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 150A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,920 |
|
MOSFET (Metal Oxide) | 150V | 150A (Tc) | 10V | 4V @ 8mA | 360nC @ 10V | 9100pF @ 25V | ±20V | - | 560W (Tc) | 12.5 mOhm @ 75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1200V 9A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 1.04 Ohm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
|
Package: ISOPLUS247? |
Stock3,408 |
|
MOSFET (Metal Oxide) | 1200V | 9A (Tc) | 10V | 6.5V @ 1mA | 120nC @ 10V | 6900pF @ 25V | ±30V | - | 230W (Tc) | 1.04 Ohm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
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STMicroelectronics |
MOSFET N-CH 600V 60A MAX247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: MAX247?
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock17,868 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 5V @ 250µA | 266nC @ 10V | 7300pF @ 25V | ±30V | - | 560W (Tc) | 55 mOhm @ 30A, 10V | 150°C (TJ) | Through Hole | MAX247? | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 35V 2.5A MCPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 35V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88FL/ MCPH6
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock6,192 |
|
MOSFET (Metal Oxide) | 35V | 2.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 4nC @ 10V | 186pF @ 20V | ±20V | - | 800mW (Ta) | 98 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
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STMicroelectronics |
MOSFET N CH 650V 9A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock162,180 |
|
MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 620pF @ 100V | ±25V | - | 85W (Tc) | 480 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 100V 80A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock13,908 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 15 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 4.5A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock10,080 |
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MOSFET (Metal Oxide) | 150V | 4.5A (Ta) | 6V, 10V | 4V @ 250µA | 15nC @ 10V | 955pF @ 75V | ±20V | - | 2.5W (Ta), 5W (Tc) | 55 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 20A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock241,956 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 59.5nC @ 10V | 3120pF @ 25V | ±30V | - | 250W (Tc) | 230 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 60V 7A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 410 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock215,856 |
|
MOSFET (Metal Oxide) | 60V | 7A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 295pF @ 25V | ±25V | - | 45W (Tc) | 410 mOhm @ 3.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
Texas Instruments |
MOSFET N-CH 25V 100A 8-SON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 12.5V
- Vgs (Max): +16V, -12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock602,604 |
|
MOSFET (Metal Oxide) | 25V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 1.9V @ 250µA | 11.7nC @ 4.5V | 1780pF @ 12.5V | +16V, -12V | - | 3.1W (Ta) | 3.9 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET P-CH 30V 760MA SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock10,369,716 |
|
MOSFET (Metal Oxide) | 30V | 760mA (Ta) | 4.5V, 10V | 1V @ 250µA | 5.1nC @ 10V | 75pF @ 25V | ±20V | - | 540mW (Ta) | 600 mOhm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
Diodes Incorporated |
MOSFET P-CH 70V 5.7A D PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 70V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.11W (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock240,660 |
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MOSFET (Metal Oxide) | 70V | 3.8A (Ta) | 4.5V, 10V | 1V @ 250µA | 18nC @ 10V | 635pF @ 40V | ±20V | - | 2.11W (Ta) | 160 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Panjit International Inc. |
600V/ 74MOHM / 53A/ FAST RECOVER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3871 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Rds On (Max) @ Id, Vgs: 74mOhm @ 26.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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Package: - |
Stock8,952 |
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MOSFET (Metal Oxide) | 600 V | 53A (Tc) | 10V | 4.5V @ 250µA | 84 nC @ 10 V | 3871 pF @ 400 V | ±30V | - | 446W (Tc) | 74mOhm @ 26.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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IXYS |
IXTA30N65X2
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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MOSLEADER |
N 30V 3.8A SOT23-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 60 V (D-S)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock7,185 |
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MOSFET (Metal Oxide) | 60 V | 7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12 nC @ 4.5 V | 1300 pF @ 30 V | ±20V | - | 5W (Tc) | 42mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 600V 37.9A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: - |
Stock2,694 |
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MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 3.5V @ 1.21mA | 119 nC @ 10 V | 2660 pF @ 100 V | ±20V | - | 278W (Tc) | 99mOhm @ 18.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Harris Corporation |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 750mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 350 V | 7A (Tc) | 10V | 4V @ 1mA | - | 1600 pF @ 25 V | ±20V | - | 75W (Tc) | 750mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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NXP |
MOSFET N-CH 30V TRENCH LFPACK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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MOSLEADER |
Single N 30V 4.8A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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