Page 1396 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF5305STRR
Infineon Technologies

MOSFET P-CH 55V 31A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,168
SI7860ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8

Package: PowerPAK? SO-8

Stock7,456
PH6030AL,115
Nexperia USA Inc.

MOSFET N-CH 30V 79A LFPAK

Package: SC-100, SOT-669

Stock5,296
APTM100SK40T1G
Microsemi Corporation

MOSFET N-CH 1000V 20A SP1

Package: SP1

Stock6,592
SI4825DY-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 8.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock638,820
IXFT40N30Q
IXYS

MOSFET N-CH 300V 40A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock6,240
NTMFS4H01NT3G
ON Semiconductor

MOSFET N-CH 25V 54A SO8FL

Package: 8-PowerTDFN

Stock6,608
IRF820STRLPBF
Vishay Siliconix

MOSFET N-CH 500V 2.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,952
AOW10N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,040
FQA13N50CF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 15A TO-3P

Package: TO-3P-3, SC-65-3

Stock104,100
APT66F60B2
Microsemi Corporation

MOSFET N-CH 600V 70A TO-247

Package: TO-247-3 Variant

Stock6,108
IXTR48P20P
IXYS

MOSFET P-CH 200V 30A ISOPLUS247

Package: ISOPLUS247?

Stock4,624
FCB20N60F_F085
Fairchild/ON Semiconductor

MOSFET N CH 600V 20A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,128
BBS3002-TL-1E
ON Semiconductor

MOSFET P-CH 60V 100A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,352
IPA80R280P7XKSA1
Infineon Technologies

MOSFET N-CH 800V 17A TO220

Package: TO-220-3 Full Pack

Stock8,640
FCH040N65S3_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 65A TO247-3

Package: TO-247-3

Stock9,324
STP15NM65N
STMicroelectronics

MOSFET N-CH 650V 12A TO-220

Package: TO-220-3

Stock72,720
IRFU9120PBF
Vishay Siliconix

MOSFET P-CH 100V 5.6A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock203,856
STP80NF03L-04
STMicroelectronics

MOSFET N-CH 30V 80A TO-220

Package: TO-220-3

Stock818,580
FDS5351
Fairchild/ON Semiconductor

MOSFET N-CH 60V 6.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock243,648

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF5305STRR	Infineon Technologies	MOSFET P-CH 55V 31A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,168	MOSFET (Metal Oxide)	55V	31A (Tc)	10V	4V @ 250µA	63nC @ 10V	1200pF @ 25V	±20V	-	3.8W (Ta), 110W (Tc)	60 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7860ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,456	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	18nC @ 4.5V	-	±20V	-	1.8W (Ta)	9.5 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
PH6030AL,115	Nexperia USA Inc.	MOSFET N-CH 30V 79A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock5,296	MOSFET (Metal Oxide)	30V	79A (Tc)	-	2.15V @ 1mA	24nC @ 10V	1425pF @ 12V	-	-	-	6 mOhm @ 15A, 10V	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
APTM100SK40T1G	Microsemi Corporation	MOSFET N-CH 1000V 20A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 16A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock6,592	MOSFET (Metal Oxide)	1000V	20A	10V	5V @ 2.5mA	260nC @ 10V	6800pF @ 25V	±30V	-	357W (Tc)	480 mOhm @ 16A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SI4825DY-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 8.1A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock638,820	MOSFET (Metal Oxide)	30V	8.1A (Ta)	4.5V, 10V	3V @ 250µA	71nC @ 10V	-	±25V	-	1.5W (Ta)	14 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXFT40N30Q	IXYS	MOSFET N-CH 300V 40A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,240	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 4mA	140nC @ 10V	3100pF @ 25V	±20V	-	300W (Tc)	80 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
NTMFS4H01NT3G	ON Semiconductor	MOSFET N-CH 25V 54A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5693pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,608	MOSFET (Metal Oxide)	25V	54A (Ta), 334A (Tc)	4.5V, 10V	2.1V @ 250µA	85nC @ 10V	5693pF @ 12V	±20V	-	3.2W (Ta), 125W (Tc)	0.7 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
IRF820STRLPBF	Vishay Siliconix	MOSFET N-CH 500V 2.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,952	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	24nC @ 10V	360pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOW10N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,040	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	250W (Tc)	750 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
FQA13N50CF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 15A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 218W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock104,100	MOSFET (Metal Oxide)	500V	15A (Tc)	10V	4V @ 250µA	56nC @ 10V	2055pF @ 25V	±30V	-	218W (Tc)	480 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
APT66F60B2	Microsemi Corporation	MOSFET N-CH 600V 70A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13190pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,108	MOSFET (Metal Oxide)	600V	70A (Tc)	10V	5V @ 2.5mA	330nC @ 10V	13190pF @ 25V	±30V	-	1135W (Tc)	90 mOhm @ 33A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
IXTR48P20P	IXYS	MOSFET P-CH 200V 30A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 93 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock4,624	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4.5V @ 250µA	103nC @ 10V	5400pF @ 25V	±20V	-	190W (Tc)	93 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
FCB20N60F_F085	Fairchild/ON Semiconductor	MOSFET N CH 600V 20A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2035pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 405W (Tc) Rds On (Max) @ Id, Vgs: 195 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,128	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	102nC @ 10V	2035pF @ 25V	±30V	-	405W (Tc)	195 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BBS3002-TL-1E	ON Semiconductor	MOSFET P-CH 60V 100A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,352	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	-	280nC @ 10V	13200pF @ 20V	±20V	-	90W (Tc)	5.8 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA80R280P7XKSA1	Infineon Technologies	MOSFET N-CH 800V 17A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,640	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	3.5V @ 360µA	36nC @ 10V	1200pF @ 500V	±20V	Super Junction	30W (Tc)	280 mOhm @ 7.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
FCH040N65S3_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 65A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 6.5mA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4740pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 32.5A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,324	MOSFET (Metal Oxide)	650V	65A (Tc)	10V	4.5V @ 6.5mA	136nC @ 10V	4740pF @ 400V	±30V	-	417W (Tc)	40 mOhm @ 32.5A, 10V	-55°C ~ 150°C	Through Hole	TO-247-3	TO-247-3
STP15NM65N	STMicroelectronics	MOSFET N-CH 650V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 983pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock72,720	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	33.3nC @ 10V	983pF @ 50V	±25V	-	125W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFU9120PBF	Vishay Siliconix	MOSFET P-CH 100V 5.6A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock203,856	MOSFET (Metal Oxide)	100V	5.6A (Tc)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	600 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
STP80NF03L-04	STMicroelectronics	MOSFET N-CH 30V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock818,580	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	110nC @ 4.5V	5500pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDS5351	Fairchild/ON Semiconductor	MOSFET N-CH 60V 6.1A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock243,648	MOSFET (Metal Oxide)	60V	6.1A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 10V	1310pF @ 30V	±20V	-	5W (Ta)	35 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RUM003N02T2L	Rohm Semiconductor	MOSFET N-CH 20V 300MA VMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock4,967,664	MOSFET (Metal Oxide)	20V	300mA (Ta)	1.8V, 4V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	1 Ohm @ 300mA, 4V	150°C (TJ)	Surface Mount	VMT3	SOT-723
UJ4C075060L8SSB	Qorvo	750V/60MO,SICFET,G4,TOLL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
XP231P02013R-G	Torex Semiconductor Ltd	MOSFET P-CH 30V 200MA SOT323-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3A Package / Case: SC-70, SOT-323	Package: -	Stock210	MOSFET (Metal Oxide)	30 V	200mA (Tc)	2.5V, 4.5V	1.2V @ 250µA	-	34 pF @ 10 V	±8V	-	350mW (Ta)	5Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	SOT-323-3A	SC-70, SOT-323
XPN9R614MC-L1XHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 40A 8TSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 840mW (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Package / Case: 8-PowerVDFN	Package: -	Stock39,813	MOSFET (Metal Oxide)	40 V	40A (Ta)	4.5V, 10V	2.1V @ 500µA	64 nC @ 10 V	3000 pF @ 10 V	+10V, -20V	-	840mW (Ta), 100W (Tc)	9.6mOhm @ 20A, 10V	175°C	Surface Mount	8-TSON Advance-WF (3.1x3.1)	8-PowerVDFN
DMP22D5UFA-7B	Diodes Incorporated	MOSFET BVDSS: 8V~24V X2-DFN0806- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0806-3 Package / Case: 3-XFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	360mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.3 nC @ 4.5 V	17 pF @ 16 V	±8V	-	370mW (Ta)	1.9Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN0806-3	3-XFDFN
FDMA905P_F130	onsemi	MOSFET P-CH 12V 10A 6MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-WDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	10A (Ta)	1.8V, 4.5V	1V @ 250µA	29 nC @ 6 V	3405 pF @ 6 V	±8V	-	2.4W (Ta)	16mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-WDFN Exposed Pad
PJE8400_R1_00001	Panjit International Inc.	20V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 88mOhm @ 1.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1.1A (Ta)	1.8V, 4.5V	1.2V @ 250µA	4.6 nC @ 4.5 V	350 pF @ 10 V	±12V	-	300mW (Ta)	88mOhm @ 1.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
MCM3006-TP	Micro Commercial Co	MOSFET N-CH DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.4A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W Rds On (Max) @ Id, Vgs: 35.4mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020-6LE Package / Case: 6-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5.4A	4.5V, 10V	3V @ 250µA	16.2 nC @ 10 V	915 pF @ 15 V	±20V	-	1.56W	35.4mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020-6LE	6-VDFN Exposed Pad