Page 51 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFS4010-7P
Infineon Technologies

MOSFET N-CH 100V 190A D2PAK-7P

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock214,200
BSL207SPL6327HTSA1
Infineon Technologies

MOSFET P-CH 20V 6A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock5,696
PSMN009-100W,127
NXP

MOSFET N-CH 100V 100A SOT429

Package: TO-247-3

Stock4,384
FQAF12P20
Fairchild/ON Semiconductor

MOSFET P-CH 200V 8.6A TO-3PF

Package: SC-94

Stock5,712
IRLL110
Vishay Siliconix

MOSFET N-CH 100V 1.5A SOT223

Package: TO-261-4, TO-261AA

Stock217,716
IRFI634G
Vishay Siliconix

MOSFET N-CH 250V 5.6A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock85,476
IXFT28N50Q
IXYS

MOSFET N-CH 500V 28A TO-268(D3)

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,232
IXT-1-1N100S1-TR
IXYS

MOSFET N-CH 1000V 1.5A 8-SOIC

Package: 8-SOIC

Stock4,400
DMTH10H015LK3-13
Diodes Incorporated

MOSFET NCH 100V 52.5A TO252

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock3,792
PHD101NQ03LT,118
Nexperia USA Inc.

MOSFET N-CH 30V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,168
CSD25480F3
Texas Instruments

MOSFET P-CH 20V 1.7A PICOSTAR

Package: 3-XFDFN

Stock2,624
IXFK170N25X3
IXYS

MOSFET N-CH 250V 170A TO264

Package: TO-264-3, TO-264AA

Stock6,300
IRFIZ34GPBF
Vishay Siliconix

MOSFET N-CH 60V 20A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock16,380
STL22N65M5
STMicroelectronics

MOSFET N CH 650V 15A PWRFLT8X8HV

Package: 4-PowerFlat? HV

Stock5,584
CSD19502Q5B
Texas Instruments

MOSFET N-CH 80V 100A 8SON

Package: 8-PowerTDFN

Stock2,624
C3M0065100J
Cree/Wolfspeed

MOSFET N-CH SIC 1KV 35A D2PAK-7

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock6,096
BSS670S2LH6327XTSA1
Infineon Technologies

MOSFET N-CH 55V 540MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock42,654
DMP4015SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V PowerDI506

Package: -

Request a Quote
G900P15M
Goford Semiconductor

MOSFET P-CH 150V 35A TO263

Package: -

Stock327
G900P15T
Goford Semiconductor

P-150V,-60A,RD(MAX)<80M@-10V,VTH

Package: -

Stock201

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFS4010-7P	Infineon Technologies	MOSFET N-CH 100V 190A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9830pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock214,200	MOSFET (Metal Oxide)	100V	190A (Tc)	10V	4V @ 250µA	230nC @ 10V	9830pF @ 50V	±20V	-	380W (Tc)	4 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
BSL207SPL6327HTSA1	Infineon Technologies	MOSFET P-CH 20V 6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,696	MOSFET (Metal Oxide)	20V	6A (Ta)	2.5V, 4.5V	1.2V @ 40µA	20nC @ 4.5V	1007pF @ 15V	±12V	-	2W (Ta)	41 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
PSMN009-100W,127	NXP	MOSFET N-CH 100V 100A SOT429 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,384	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	4V @ 1mA	214nC @ 10V	9000pF @ 25V	±20V	-	300W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
FQAF12P20	Fairchild/ON Semiconductor	MOSFET P-CH 200V 8.6A TO-3PF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 470 mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock5,712	MOSFET (Metal Oxide)	200V	8.6A (Tc)	10V	5V @ 250µA	40nC @ 10V	1200pF @ 25V	±30V	-	70W (Tc)	470 mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
IRLL110	Vishay Siliconix	MOSFET N-CH 100V 1.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock217,716	MOSFET (Metal Oxide)	100V	1.5A (Tc)	4V, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	±10V	-	2W (Ta), 3.1W (Tc)	540 mOhm @ 900mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFI634G	Vishay Siliconix	MOSFET N-CH 250V 5.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock85,476	MOSFET (Metal Oxide)	250V	5.6A (Tc)	10V	4V @ 250µA	41nC @ 10V	770pF @ 25V	±20V	-	35W (Tc)	450 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IXFT28N50Q	IXYS	MOSFET N-CH 500V 28A TO-268(D3) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,232	MOSFET (Metal Oxide)	500V	28A (Tc)	10V	4.5V @ 4mA	94nC @ 10V	3000pF @ 25V	±30V	-	375W (Tc)	200 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXT-1-1N100S1-TR	IXYS	MOSFET N-CH 1000V 1.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC	Package: 8-SOIC	Stock4,400	MOSFET (Metal Oxide)	1000V	1.5A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	8-SOIC	8-SOIC
DMTH10H015LK3-13	Diodes Incorporated	MOSFET NCH 100V 52.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 52.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock3,792	MOSFET (Metal Oxide)	100V	52.5A (Ta)	6V, 10V	3.5V @ 250µA	33.3nC @ 10V	1871pF @ 50V	±20V	-	2.1W (Ta)	15 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-4L	TO-252-5, DPak (4 Leads + Tab), TO-252AD
PHD101NQ03LT,118	Nexperia USA Inc.	MOSFET N-CH 30V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,168	MOSFET (Metal Oxide)	30V	75A (Tc)	5V, 10V	2.5V @ 1mA	23nC @ 5V	2180pF @ 25V	±20V	-	166W (Tc)	5.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD25480F3	Texas Instruments	MOSFET P-CH 20V 1.7A PICOSTAR FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V Vgs (Max): -12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 132 mOhm @ 400mA, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock2,624	MOSFET (Metal Oxide)	20V	1.7A (Ta)	1.8V, 8V	1.2V @ 250µA	0.91nC @ 4.5V	155pF @ 10V	-12V	-	500mW (Ta)	132 mOhm @ 400mA, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
IXFK170N25X3	IXYS	MOSFET N-CH 250V 170A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,300	MOSFET (Metal Oxide)	250V	170A (Tc)	10V	4.5V @ 4mA	190nC @ 10V	13500pF @ 25V	±20V	-	960W (Tc)	7.4 mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA
IRFIZ34GPBF	Vishay Siliconix	MOSFET N-CH 60V 20A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock16,380	MOSFET (Metal Oxide)	60V	20A (Tc)	10V	4V @ 250µA	46nC @ 10V	1200pF @ 25V	±20V	-	42W (Tc)	50 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
STL22N65M5	STMicroelectronics	MOSFET N CH 650V 15A PWRFLT8X8HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock5,584	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	5V @ 250µA	36nC @ 10V	1345pF @ 100V	±25V	-	2.8W (Ta), 110W (Tc)	210 mOhm @ 8.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
CSD19502Q5B	Texas Instruments	MOSFET N-CH 80V 100A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,624	MOSFET (Metal Oxide)	80V	100A (Ta)	6V, 10V	3.3V @ 250µA	62nC @ 10V	4870pF @ 40V	±20V	-	3.1W (Ta), 195W (Tc)	4.1 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
C3M0065100J	Cree/Wolfspeed	MOSFET N-CH SIC 1KV 35A D2PAK-7 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 113.5W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock6,096	SiC (Silicon Carbide Junction Transistor)	1000V	35A (Tc)	15V	3.5V @ 5mA	35nC @ 15V	660pF @ 600V	+15V, -4V	-	113.5W (Tc)	78 mOhm @ 20A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
BSS670S2LH6327XTSA1	Infineon Technologies	MOSFET N-CH 55V 540MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2.7µA Gate Charge (Qg) (Max) @ Vgs: 2.26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 650 mOhm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock42,654	MOSFET (Metal Oxide)	55V	540mA (Ta)	4.5V, 10V	2V @ 2.7µA	2.26nC @ 10V	75pF @ 25V	±20V	-	360mW (Ta)	650 mOhm @ 270mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
DMP4015SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V PowerDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	8.5A (Ta)	4.5V, 10V	2.5V @ 250µA	47.5 nC @ 5 V	4234 pF @ 20 V	±25V	-	1.3W (Ta)	11mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
G900P15M	Goford Semiconductor	MOSFET P-CH 150V 35A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock327	MOSFET (Metal Oxide)	150 V	35A (Tc)	10V	4V @ 250µA	27 nC @ 10 V	4056 pF @ 75 V	±20V	-	198W (Tc)	80mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G900P15T	Goford Semiconductor	P-150V,-60A,RD(MAX)<80M@-10V,VTH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock201	MOSFET (Metal Oxide)	150 V	60A (Tc)	10V	4V @ 250µA	27 nC @ 10 V	3932 pF @ 75 V	±20V	-	100W (Tc)	80mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFR130N65X3	IXYS	DISCRETE MOSFET 130A 650V X3 ISO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF76143S3ST	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	75A (Tc)	4.5V, 10V	3V @ 250µA	114 nC @ 10 V	3900 pF @ 25 V	±20V	-	225W (Tc)	5.5mOhm @ 75A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2SK4120LS	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI100N04S303MATMA1	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT220N20X3HV	IXYS	MOSFET N-CH 200V 220A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Stock5,640	MOSFET (Metal Oxide)	200 V	220A (Tc)	10V	4.5V @ 4mA	204 nC @ 10 V	13600 pF @ 25 V	±20V	-	960W (Tc)	6.2mOhm @ 110A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MCA03N10-TP	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 3A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	3A	10V	2V @ 250µA	15.5 nC @ 10 V	690 pF @ 25 V	±20V	-	500mW	140mOhm @ 5A, 10V	-55°C ~ 150°C	Surface Mount	SOT-89	TO-243AA
PXN012-100QSJ	Nexperia USA Inc.	N-CHANNEL 100 V, 12 MOHM, STANDA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 58W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock17,370	MOSFET (Metal Oxide)	100 V	50A	10V	-	22 nC @ 10 V	-	-	-	58W	-	-	Surface Mount	MLPAK33	8-PowerVDFN
AIMZHN120R160M1TXKSA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 109W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-14 Package / Case: TO-247-4	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	17A (Tc)	18V, 20V	5.1V @ 1.5mA	14 nC @ 20 V	350 pF @ 800 V	+23V, -5V	-	109W (Tc)	200mOhm @ 5A, 20V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-14	TO-247-4