Page 52 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS123L6433HTMA1
Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,616
IRLR3714TRRPBF
Infineon Technologies

MOSFET N-CH 20V 36A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,280
MIC94031CYW
Microchip Technology

MOSFET P-CH 16V 1A

Package: -

Stock2,080
SIE854DF-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 60A POLARPAK

Package: 10-PolarPAK? (L)

Stock7,488
IXTA200N075T7
IXYS

MOSFET N-CH 75V 200A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock3,088
BSN254,126
NXP

MOSFET N-CH 250V 310MA SOT54

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock5,856
ZXMN10B08E6TC
Diodes Incorporated

MOSFET N-CH 100V 1.6A SOT23-6

Package: SOT-23-6

Stock5,920
STP80NF03L
STMicroelectronics

MOSFET N-CH 30V 80A TO-220

Package: TO-220-3

Stock119,988
IXTQ74N20P
IXYS

MOSFET N-CH 200V 74A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,360
PMPB43XPE,115
Nexperia USA Inc.

MOSFET P-CH 20V 5A 6DFN

Package: 6-UDFN Exposed Pad

Stock5,584
TSM3446CX6 RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: SOT-23-6

Stock3,536
TK290A60Y,S4X
Toshiba Semiconductor and Storage

MOSFET TRANSISTOR TO-220SIS PD

Package: TO-220-3 Full Pack

Stock6,656
IRFR6215TRLPBF
Infineon Technologies

MOSFET P-CH 150V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,328
SIS468DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 30A 1212-8

Package: PowerPAK? 1212-8

Stock3,584
STW18N60M2
STMicroelectronics

MOSFET N-CH 600V 13A TO-247

Package: TO-247-3

Stock16,800
RSJ800N06TL
Rohm Semiconductor

MOSFET N-CH 60V 80A LPTS

Package: SC-83

Stock16,290
SI7463DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 40V 11A PPAK SO-8

Package: PowerPAK? SO-8

Stock231,228
PJC7407_R1_00001
Panjit International Inc.

SOT-323, MOSFET

Package: -

Stock111,798
SISHA10DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 25A/30A PPAK

Package: -

Request a Quote
SI2310A-TP
Micro Commercial Co

N-CHANNEL MOSFET,SOT-23

Package: -

Stock10,869

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS123L6433HTMA1	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 69pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,616	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	1.8V @ 50µA	2.67nC @ 10V	69pF @ 25V	±20V	-	360mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRLR3714TRRPBF	Infineon Technologies	MOSFET N-CH 20V 36A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,280	MOSFET (Metal Oxide)	20V	36A (Tc)	4.5V, 10V	3V @ 250µA	9.7nC @ 4.5V	670pF @ 10V	±20V	-	47W (Tc)	20 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
MIC94031CYW	Microchip Technology	MOSFET P-CH 16V 1A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,080	MOSFET (Metal Oxide)	16V	1A (Ta)	-	1.4V @ 250µA	-	-	-	-	568mW (Ta)	450 mOhm @ 100mA, 10V	-55°C ~ 150°C (TJ)	-	-	-
SIE854DF-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 14.2 mOhm @ 13.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock7,488	MOSFET (Metal Oxide)	100V	60A (Tc)	10V	4.4V @ 250µA	75nC @ 10V	3100pF @ 50V	±20V	-	5.2W (Ta), 125W (Tc)	14.2 mOhm @ 13.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
IXTA200N075T7	IXYS	MOSFET N-CH 75V 200A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,088	MOSFET (Metal Oxide)	75V	200A (Tc)	10V	4V @ 250µA	160nC @ 10V	6800pF @ 25V	±20V	-	430W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BSN254,126	NXP	MOSFET N-CH 250V 310MA SOT54 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5,856	MOSFET (Metal Oxide)	250V	310mA (Ta)	2.4V, 10V	2V @ 1mA	-	120pF @ 25V	±20V	-	1W (Ta)	5 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
ZXMN10B08E6TC	Diodes Incorporated	MOSFET N-CH 100V 1.6A SOT23-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock5,920	MOSFET (Metal Oxide)	100V	1.6A (Ta)	4.3V, 10V	3V @ 250µA	9.2nC @ 10V	497pF @ 50V	±20V	-	1.1W (Ta)	230 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
STP80NF03L	STMicroelectronics	MOSFET N-CH 30V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock119,988	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	110nC @ 4.5V	5500pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTQ74N20P	IXYS	MOSFET N-CH 200V 74A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,360	MOSFET (Metal Oxide)	200V	74A (Tc)	10V	5V @ 250µA	107nC @ 10V	3300pF @ 25V	±20V	-	480W (Tc)	34 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
PMPB43XPE,115	Nexperia USA Inc.	MOSFET P-CH 20V 5A 6DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock5,584	MOSFET (Metal Oxide)	20V	5A (Ta)	1.8V, 4.5V	900mV @ 250µA	23.4nC @ 4.5V	1550pF @ 10V	±12V	-	1.7W (Ta), 12.5W (Tc)	48 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
TSM3446CX6 RFG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock3,536	MOSFET (Metal Oxide)	20V	5.3A (Tc)	2.5V, 4.5V	1V @ 250µA	8.8nC @ 4.5V	700pF @ 10V	±12V	-	2W (Ta)	33 mOhm @ 5.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
TK290A60Y,S4X	Toshiba Semiconductor and Storage	MOSFET TRANSISTOR TO-220SIS PD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 5.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,656	MOSFET (Metal Oxide)	600V	11.5A (Tc)	10V	4V @ 450µA	25nC @ 10V	730pF @ 300V	±30V	-	35W (Tc)	290 mOhm @ 5.8A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
IRFR6215TRLPBF	Infineon Technologies	MOSFET P-CH 150V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,328	MOSFET (Metal Oxide)	150V	13A (Tc)	10V	4V @ 250µA	66nC @ 10V	860pF @ 25V	±20V	-	110W (Tc)	295 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SIS468DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 30A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock3,584	MOSFET (Metal Oxide)	80V	30A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 10V	780pF @ 40V	±20V	-	3.7W (Ta), 52W (Tc)	19.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
STW18N60M2	STMicroelectronics	MOSFET N-CH 600V 13A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock16,800	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	21.5nC @ 10V	791pF @ 100V	±25V	-	110W (Tc)	280 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
RSJ800N06TL	Rohm Semiconductor	MOSFET N-CH 60V 80A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock16,290	MOSFET (Metal Oxide)	60V	80A (Ta)	-	-	-	-	-	-	-	-	-	Surface Mount	LPTS	SC-83
SI7463DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 40V 11A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock231,228	MOSFET (Metal Oxide)	40V	11A (Ta)	4.5V, 10V	3V @ 250µA	140nC @ 10V	-	±20V	-	1.9W (Ta)	9.2 mOhm @ 18.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
PJC7407_R1_00001	Panjit International Inc.	SOT-323, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock111,798	MOSFET (Metal Oxide)	20 V	1.3A (Ta)	1.8V, 4.5V	1.2V @ 250µA	5.4 nC @ 4.5 V	416 pF @ 10 V	±12V	-	350mW (Ta)	125mOhm @ 1.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SISHA10DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 25A/30A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	25A (Ta), 30A (Tc)	4.5V, 10V	2.2V @ 250µA	51 nC @ 10 V	2425 pF @ 15 V	+20V, -16V	-	3.6W (Ta), 39W (Tc)	3.7mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
SI2310A-TP	Micro Commercial Co	N-CHANNEL MOSFET,SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock10,869	MOSFET (Metal Oxide)	60 V	3A	4.5V, 10V	1.5V @ 250µA	6 nC @ 4.5 V	247 pF @ 30 V	±20V	-	1.2W	105mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IXTP86N20X4	IXYS	MOSFET 200V 86A N-CH ULTRA TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock1,614	MOSFET (Metal Oxide)	200 V	86A (Tc)	10V	4.5V @ 250µA	70 nC @ 10 V	2250 pF @ 25 V	±20V	-	300W (Tc)	13mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
UPA2520T1H-T1-AT	Renesas Electronics Corporation	MOSFET N-CH 30V 10A 8VSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13.2mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSOF Package / Case: 8-SMD, Flat Lead	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	-	2.5V @ 1mA	10.8 nC @ 5 V	1100 pF @ 15 V	-	-	1W (Ta)	13.2mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-VSOF	8-SMD, Flat Lead
SQ3426AEEV-T1_BE3	Vishay Siliconix	MOSFET N-CH 60V 7A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock8,949	MOSFET (Metal Oxide)	60 V	7A (Tc)	4.5V, 10V	2.5V @ 250µA	14 nC @ 10 V	1100 pF @ 30 V	±20V	-	5W (Tc)	42mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
IPB65R420CFDATMA1	Infineon Technologies	MOSFET N-CH 650V 8.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	8.7A (Tc)	10V	4.5V @ 340µA	32 nC @ 10 V	870 pF @ 100 V	±20V	-	83.3W (Tc)	420mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQJ401EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 12V 32A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 10015 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock1,092	MOSFET (Metal Oxide)	12 V	32A (Tc)	2.5V, 4.5V	1.5V @ 250µA	164 nC @ 4.5 V	10015 pF @ 6 V	±8V	-	83W (Tc)	6mOhm @ 15A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQ4182EY-T1_GE3	Vishay Siliconix	MOSFET N-CHANNEL 30V 32A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.1W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock24,411	MOSFET (Metal Oxide)	30 V	32A (Tc)	4.5V, 10V	2.5V @ 250µA	110 nC @ 10 V	5400 pF @ 15 V	±20V	-	7.1W (Tc)	3.8mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SQD100N02-3M5L_GE3	Vishay Siliconix	MOSFET N-CH 20V 100A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock4,362	MOSFET (Metal Oxide)	20 V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	110 nC @ 10 V	5500 pF @ 10 V	±20V	-	83W (Tc)	3.5mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQ2348CES-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 30 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock7,110	MOSFET (Metal Oxide)	30 V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	14.5 nC @ 10 V	540 pF @ 15 V	±20V	-	3W (Tc)	24mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3