Page 92 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRLR024N
Infineon Technologies

MOSFET N-CH 55V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,856
IPP10N03LB G
Infineon Technologies

MOSFET N-CH 30V 50A TO-220

Package: TO-220-3

Stock4,944
SPD07N60C3BTMA1
Infineon Technologies

MOSFET N-CH 650V 7.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,464
AON6450L_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 8DFN

Package: 8-VDFN Exposed Pad

Stock3,200
GP2M010A060H
Global Power Technologies Group

MOSFET N-CH 600V 10A TO220

Package: TO-220-3

Stock2,832
AO5401E
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 0.5A SC89-3L

Package: SC-89, SOT-490

Stock36,780
2SK3823
ON Semiconductor

MOSFET N-CH 60V 40A TO220-3

Package: TO-220-3

Stock32,400
FQI9N15TU
Fairchild/ON Semiconductor

MOSFET N-CH 150V 9A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,208
IRFD420
Vishay Siliconix

MOSFET N-CH 500V 370MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock3,488
IRLS3036-7PPBF
Infineon Technologies

MOSFET N-CH 60V 240A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock112,776
NVMFS5C612NLAFT1G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,272
PHK18NQ03LT,518
Nexperia USA Inc.

MOSFET N-CH 30V 20.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,624
SI4196DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock210,000
MCH6448-TL-W
ON Semiconductor

MOSFET N-CH 20V 8A MCPH6

Package: 6-SMD, Flat Leads

Stock6,768
IXTT40N50L2
IXYS

MOSFET N-CH 500V 40A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,552
FDB8860_F085
Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,944
SIA4371EDJ-T1-GE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET POWE

Package: -

Stock16,530
AOSN32128
Alpha & Omega Semiconductor Inc.

SINGLE

Package: -

Request a Quote
SFS9634
Fairchild Semiconductor

P-CHANNEL POWER MOSFET

Package: -

Request a Quote
NVMFS6H858NLT1G
onsemi

MOSFET N-CH 80V 8.7A/30A 5DFN

Package: -

Stock4,305

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRLR024N	Infineon Technologies	MOSFET N-CH 55V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,856	MOSFET (Metal Oxide)	55V	17A (Tc)	4V, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	±16V	-	45W (Tc)	65 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP10N03LB G	Infineon Technologies	MOSFET N-CH 30V 50A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1639pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock4,944	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2V @ 20µA	13nC @ 5V	1639pF @ 15V	±20V	-	58W (Tc)	9.9 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SPD07N60C3BTMA1	Infineon Technologies	MOSFET N-CH 650V 7.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,464	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.9V @ 350µA	27nC @ 10V	790pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
AON6450L_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 8DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock3,200	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-DFN (5x6)	8-VDFN Exposed Pad
GP2M010A060H	Global Power Technologies Group	MOSFET N-CH 600V 10A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock2,832	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	35nC @ 10V	1660pF @ 25V	±30V	-	198W (Tc)	700 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
AO5401E	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 0.5A SC89-3L FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 280mW (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock36,780	MOSFET (Metal Oxide)	20V	500mA (Ta)	1.8V, 4.5V	900mV @ 250µA	-	100pF @ 10V	±8V	-	280mW (Ta)	800 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
2SK3823	ON Semiconductor	MOSFET N-CH 60V 40A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock32,400	MOSFET (Metal Oxide)	60V	40A (Ta)	4V, 10V	2.6V @ 1mA	40nC @ 10V	1780pF @ 20V	±20V	-	1.75W (Ta), 45W (Tc)	27.5 mOhm @ 20A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
FQI9N15TU	Fairchild/ON Semiconductor	MOSFET N-CH 150V 9A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,208	MOSFET (Metal Oxide)	150V	9A (Tc)	10V	4V @ 250µA	13nC @ 10V	410pF @ 25V	±25V	-	3.75W (Ta), 75W (Tc)	400 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFD420	Vishay Siliconix	MOSFET N-CH 500V 370MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock3,488	MOSFET (Metal Oxide)	500V	370mA (Ta)	10V	4V @ 250µA	24nC @ 10V	360pF @ 25V	±20V	-	1W (Ta)	3 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRLS3036-7PPBF	Infineon Technologies	MOSFET N-CH 60V 240A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock112,776	MOSFET (Metal Oxide)	60V	240A (Tc)	4.5V, 10V	2.5V @ 250µA	160nC @ 4.5V	11270pF @ 50V	±16V	-	380W (Tc)	1.9 mOhm @ 180A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
NVMFS5C612NLAFT1G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.36 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,272	MOSFET (Metal Oxide)	60V	38A (Ta), 250A (Tc)	4.5V, 10V	2V @ 250µA	91nC @ 10V	6660pF @ 25V	±20V	-	3.8W (Ta), 167W (Tc)	1.36 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
PHK18NQ03LT,518	Nexperia USA Inc.	MOSFET N-CH 30V 20.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,624	MOSFET (Metal Oxide)	30V	20.3A (Tc)	4.5V, 10V	2.15V @ 1mA	10.6nC @ 4.5V	1380pF @ 12V	±20V	-	6.25W (Tc)	8.9 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4196DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 8A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta), 4.6W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock210,000	MOSFET (Metal Oxide)	20V	8A (Tc)	1.8V, 4.5V	1V @ 250µA	22nC @ 8V	830pF @ 10V	±8V	-	2W (Ta), 4.6W (Tc)	27 mOhm @ 8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
MCH6448-TL-W	ON Semiconductor	MOSFET N-CH 20V 8A MCPH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 10V Vgs (Max): ±9V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88FL/ MCPH6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock6,768	MOSFET (Metal Oxide)	20V	8A (Ta)	1.2V, 4.5V	1V @ 1mA	11.2nC @ 4.5V	705pF @ 10V	±9V	-	1.5W (Ta)	22 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	SC-88FL/ MCPH6	6-SMD, Flat Leads
IXTT40N50L2	IXYS	MOSFET N-CH 500V 40A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,552	MOSFET (Metal Oxide)	500V	40A (Tc)	10V	4.5V @ 250µA	320nC @ 10V	10400pF @ 25V	±20V	-	540W (Tc)	170 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
FDB8860_F085	Fairchild/ON Semiconductor	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12585pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,944	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	3V @ 250µA	214nC @ 10V	12585pF @ 15V	±20V	-	254W (Tc)	2.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIA4371EDJ-T1-GE3	Vishay Siliconix	P-CHANNEL 30-V (D-S) MOSFET POWE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	Package: -	Stock16,530	MOSFET (Metal Oxide)	30 V	6.4A (Ta), 9A (Tc)	2.5V, 10V	1.5V @ 250µA	35 nC @ 10 V	-	±12V	-	2.9W (Ta), 15.6W (Tc)	45mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
AOSN32128	Alpha & Omega Semiconductor Inc.	SINGLE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.2A (Ta)	1.8V, 4.5V	1.3V @ 250µA	6 nC @ 4.5 V	190 pF @ 10 V	±8V	-	1.1W (Ta)	75mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
SFS9634	Fairchild Semiconductor	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 1.30Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	3.4A (Tc)	10V	4V @ 250µA	37 nC @ 10 V	975 pF @ 25 V	±30V	-	33W (Tc)	1.30Ohm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NVMFS6H858NLT1G	onsemi	MOSFET N-CH 80V 8.7A/30A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,305	MOSFET (Metal Oxide)	80 V	8.7A (Ta), 30A (Tc)	4.5V, 10V	2V @ 30µA	12 nC @ 10 V	623 pF @ 40 V	±20V	-	3.5W (Ta), 42W (Tc)	19.5mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
MCAC130N04-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 130A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock51,531	MOSFET (Metal Oxide)	40 V	130A	-	2.5V @ 250µA	135 nC @ 10 V	7140 pF @ 25 V	±20V	-	115W	1.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
C3M0120065J	Wolfspeed, Inc.	650V 120M SIC MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock4,485	SiCFET (Silicon Carbide)	650 V	21A (Tc)	15V	3.6V @ 1.86mA	26 nC @ 15 V	640 pF @ 400 V	+19V, -8V	-	86W (Tc)	157mOhm @ 6.76A, 15V	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
R8009KNXC7G	Rohm Semiconductor	HIGH-SPEED SWITCHING NCH 800V 9A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 59W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock5,613	MOSFET (Metal Oxide)	800 V	9A (Ta)	10V	4.5V @ 5mA	27 nC @ 10 V	900 pF @ 100 V	±20V	-	59W (Tc)	600mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
TSM22P10CZ-C0G	Taiwan Semiconductor Corporation	MOSFET P-CH 100V 22A TO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	22A (Tc)	4.5V, 10V	3V @ 250µA	42 nC @ 10 V	2250 pF @ 30 V	±25V	-	125W (Tc)	140mOhm @ 20A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
NVMJST3D3N04CTXG	onsemi	TRENCH 6 40V LFPAK 5X7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 157A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-TCPAK Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	157A (Tc)	10V	3.5V @ 60µA	23 nC @ 10 V	1600 pF @ 25 V	±20V	-	150W (Tc)	3.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	10-TCPAK	10-PowerLSOP (0.209", 5.30mm Width)
PJE138K_R1_00001	Panjit International Inc.	SOT-523, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 223mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Flat Leads Package / Case: SC-89, SOT-490	Package: -	Stock107,286	MOSFET (Metal Oxide)	50 V	350mA (Ta)	2.5V, 10V	1.5V @ 250µA	1 nC @ 4.5 V	50 pF @ 25 V	±20V	-	223mW (Ta)	1.6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523 Flat Leads	SC-89, SOT-490
IRFS254BFP001	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	16A (Tc)	10V	4V @ 250µA	123 nC @ 10 V	3400 pF @ 25 V	±30V	-	90W (Tc)	140mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
DMTH4004LPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.83W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	3V @ 250µA	69.6 nC @ 10 V	5220 pF @ 20 V	±20V	-	2.83W (Ta), 125W (Tc)	2.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN