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Microchip Technology |
SIC 4N-CH 1700V 64A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
- Power - Max: 319W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
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- | 1700V (1.7kV) | 64A (Tc) | 45mOhm @ 30A, 20V | 3.2V @ 2.5mA | 178nC @ 20V | 3300pF @ 1000V | 319W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 4N-CH 1200V 333A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
- Power - Max: 873W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 333A (Tc) | 7.8mOhm @ 80A, 20V | 2.8V @ 12mA | 928nC @ 20V | 12000pF @ 1000V | 873W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 337A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
- Power - Max: 1.409kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 160A, 20V | 2.8V @ 12mA | 928nC @ 20V | 12100pF @ 1000V | 1.409kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 6N-CH 1200V 251A SP6-P
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
- Power - Max: 1.042kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6-P
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6-P |
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Microchip Technology |
SIC 4N-CH 1200V 55A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
- Power - Max: 245W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 2mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
PM-MOSFET-SIC-SBD-6HPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc), 52A (Tc)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA, 2.7V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V, 99nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 700V, 2010pF @ 700V
- Power - Max: 90W (Tc), 141W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 31A (Tc), 52A (Tc) | 75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V | 2.4V @ 1mA, 2.7V @ 2mA | 56nC @ 20V, 99nC @ 20V | 1175pF @ 700V, 2010pF @ 700V | 90W (Tc), 141W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 1200V 251A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
- Power - Max: 1.042kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 9mA | 696nC @ 20V | 9000pF @ 1000V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 79A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 700V 349A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
- Power - Max: 966W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 349A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 966W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1700V 181A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
- Power - Max: 862W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1700V (1.7kV) | 181A (Tc) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V | 862W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 337A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
- Power - Max: 1.409kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 160A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12.08pF @ 1000V | 1.409kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 4N-CH 1200V 89A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 2N-CH 700V 124A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
- Power - Max: 365W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 700V 689A SP6C LI
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 24mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
- Power - Max: 1882W (Tc)
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C LI
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Package: - |
Request a Quote |
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- | 700V | 689A (Tc) | 3.2mOhm @ 240A, 20V | 2.4V @ 24mA (Typ) | 1290nC @ 20V | 27000pF @ 700V | 1882W (Tc) | - | Chassis Mount | Module | SP6C LI |
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Microchip Technology |
SIC 4N-CH 1200V 173A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 745W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
PM-MOSFET-SIC-SBD-6HPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V
- Power - Max: 196W (Tc), 315W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 49A (Tc), 80A (Tc) | 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V | 2.7V @ 2mA, 2.8V @ 3mA | 137nC @ 20V, 232nC @ 20V | 1990pF @ 1000V, 3020pF @ 1000V | 196W (Tc), 315W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1700V 523A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
- Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
- Power - Max: 2400W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock9 |
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- | 1700V (1.7kV) | 523A (Tc) | 5mOhm @ 270A, 20V | 3.3V @ 22.5mA | 1602nC @ 20V | 29700pF @ 1000V | 2400W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
MOSFET 600V 40A SP6-P
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6-P
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Package: - |
Request a Quote |
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- | 600V | 40A (Tc) | - | - | - | - | - | - | Chassis Mount | Module | SP6-P |
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Microchip Technology |
SIC 2N-CH 1200V 89A SP1F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP1F
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Package: - |
Stock21 |
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- | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP1F |
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Microchip Technology |
SIC 2N-CH 1700V 353A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
- Power - Max: 1.642kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock3 |
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- | 1700V (1.7kV) | 353A (Tc) | 7.5mOhm @ 180A, 20V | 3.3V @ 15mA | 1068nC @ 20V | 19800pF @ 1000V | 1.642kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1700V 353A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
- Power - Max: 1642W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock6 |
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- | 1700V (1.7kV) | 353A (Tc) | 7.5mOhm @ 180A, 20V | 3.3V @ 15mA | 1068nC @ 20V | 19800pF @ 1000V | 1642W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 1700V 179A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
- Power - Max: 843W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock39 |
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- | 1700V (1.7kV) | 179A (Tc) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V | 843W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 733A SP6C
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
- Power - Max: 2.97kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C |
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Microchip Technology |
SIC 2N-CH 1700V 523A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
- Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
- Power - Max: 2.4kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1700V (1.7kV) | 523A (Tc) | 5mOhm @ 270A, 20V | 3.3V @ 22.5mA | 1602nC @ 20V | 29700pF @ 1000V | 2.4kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 1200V 79A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 700V 538A SP6C
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C
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Package: - |
Request a Quote |
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- | 700V | 538A (Tc) | - | - | - | - | - | - | Chassis Mount | Module | SP6C |
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Microchip Technology |
PM-MOSFET-SIC-SBD-6HPD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc), 110A (Tc)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 99nC @ 20V, 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 700V, 4500pF @ 700V
- Power - Max: 141W (Tc), 292W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 52A (Tc), 110A (Tc) | 44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V | 2.7V @ 2mA, 2.4V @ 4mA | 99nC @ 20V, 215nC @ 20V | 2010pF @ 700V, 4500pF @ 700V | 141W (Tc), 292W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
MOSFET 200V 77A SP4
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP4
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Package: - |
Stock18 |
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- | 200V | 77A (Tc) | - | - | - | - | - | - | Chassis Mount | Module | SP4 |