Microchip Technology Products - Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 1200V

• FET Type: 2 N-Channel (Cascoded)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 3000 Ohm @ 2mA, 2.8V
• Vgs(th) (Max) @ Id: 1.6V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Power - Max: 350mW
• Operating Temperature: -25°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VFLGA
• Supplier Device Package: 6-LFGA (3x3)

MOSFET 2P-CH 300V SOT23-5

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 180 Ohm @ 20mA, 7V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 10.8pF @ 25V
• Power - Max: -
• Operating Temperature: -25°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

MOSFET 6N/6P-CH 200V 56VQFN

• FET Type: 6 N and 6 P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 56-VFQFN Exposed Pad
• Supplier Device Package: 56-QFN (8x8)

MOSFET N/P-CH 500V 8SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

MOSFET 2N/2P-CH 200V 12VDFN

• FET Type: 2 N and 2 P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (4x4)

MOSFET 2N/2P-CH 200V 12VDFN

• FET Type: 2 N and 2 P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 10 Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (4x4)

MOSFET N/P-CH 200V 8SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

MOSFET 2N-CH 240V 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC