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Microchip Technology |
SIC MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
SIC 2N-CH 700V 238A SP4
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
- Power - Max: 674W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP4
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Package: - |
Stock3 |
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- | 700V | 238A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 674W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP4 |
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Microchip Technology |
SIC 4N-CH 1200V 251A SP6C
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
- Power - Max: 1042W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9000pF @ 1000V | 1042W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C |
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Microchip Technology |
SIC 2N-CH 700V 353A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
- Power - Max: 988W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Stock9 |
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- | 700V | 353A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 988W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 2N-CH 1700V 353A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
- Power - Max: 1.642kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock18 |
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- | 1700V (1.7kV) | 353A (Tc) | 7.5mOhm @ 180A, 20V | 3.3V @ 15mA | 1068nC @ 20V | 19800pF @ 1000V | 1.642kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 733A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 27mA
- Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
- Power - Max: 2.97kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 27mA | 2088nC @ 20V | 27000pF @ 1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 733A D3
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
- Power - Max: 2.97kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
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Package: - |
Stock3 |
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- | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | D3 |
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Microchip Technology |
SIC 4N-CH 1700V 124A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
- Power - Max: 602W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1700V (1.7kV) | 124A (Tc) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | 6600pF @ 1000V | 602W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 89A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 251A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
- Power - Max: 1.042kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 9mA | 696nC @ 20V | 9000pF @ 1000V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 700V 538A D3
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
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Package: - |
Stock12 |
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- | 700V | 538A (Tc) | - | - | - | - | - | - | Chassis Mount | Module | D3 |
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Microchip Technology |
SIC 4N-CH 1200V 89A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 2N-CH 1700V 124A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
- Power - Max: 602W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1700V (1.7kV) | 124A (Tc) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | 6600pF @ 1000V | 602W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 254A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
- Power - Max: 1067W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 254A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V | 1067W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 4N-CH 1200V 173A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 745W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
SIC 2N-CH 700V 349A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
- Power - Max: 966W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 349A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 966W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 700V 464A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
- Power - Max: 1.277kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 464A (Tc) | 4.8mOhm @ 160A, 20V | 2.4V @ 16mA | 860nC @ 20V | 18000pF @ 700V | 1.277kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 1200V/700V 317A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
- Current - Continuous Drain (Id) @ 25°C: 317A (Tc), 227A (Tc)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 12mA, 2.4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V, 430nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V, 9000pF @ 700V
- Power - Max: 1.253kW (Tc), 613W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV), 700V | 317A (Tc), 227A (Tc) | 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V | 2.8V @ 12mA, 2.4V @ 8mA | 928nC @ 20V, 430nC @ 20V | 12100pF @ 1000V, 9000pF @ 700V | 1.253kW (Tc), 613W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 264A SP6C LI
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 264A (Tc)
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 4V @ 60mA
- Gate Charge (Qg) (Max) @ Vgs: 690nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 1000V
- Power - Max: 1350W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C LI
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 264A (Tc) | 8.7mOhm @ 240A, 20V | 4V @ 60mA | 690nC @ 20V | 11400pF @ 1000V | 1350W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C LI |
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Microchip Technology |
SIC 2N-CH 1200V 173A SP1F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 745W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP1F
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP1F |
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Microchip Technology |
SIC 2N-CH 700V 241A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
- Power - Max: 690W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Stock30 |
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- | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 6N-CH 1700V 64A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
- Power - Max: 319W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1700V (1.7kV) | 64A (Tc) | 45mOhm @ 30A, 20V | 3.2V @ 2.5mA | 178nC @ 20V | 3300pF @ 1000V | 319W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 495A D3
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
- Power - Max: 2.031kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18.1pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | D3 |
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Microchip Technology |
SIC 4N-CH 1200V 150A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 560W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
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- | 1200V (1.2kV) | 150A | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 560W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
SIC MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
SIC 2N-CH 1200V 495A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 18mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
- Power - Max: 2.031kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 18mA | 1392nC @ 20V | 18100pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |