Page 4 - Microchip Technology Products - Transistors - FETs, MOSFETs - Arrays

MSCMC170AM08CT6LIAG
Microchip Technology

SIC 2N-CH 1700V 280A SP6C LI

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MSCSM70AM025T6AG
Microchip Technology

SIC 2N-CH 700V 689A

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MSCSM120DDUM16CTBL3NG
Microchip Technology

SIC 4N-CH 1200V 150A

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MSCSM70HM19T3AG
Microchip Technology

SIC 4N-CH 700V 124A

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Stock24
MSCSM120VR1M31C1AG
Microchip Technology

SIC 2N-CH 1200V 89A

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MSCSM170HRM233AG
Microchip Technology

SIC 4N-CH 1700V/1200V 124A

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MSCSM120TLM08CAG
Microchip Technology

SIC 4N-CH 1200V 333A SP6C

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Stock15
APTMC120HR11CT3AG
Microchip Technology

SIC 2N-CH 1200V 26A SP3

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MSCSM70AM10CT3AG
Microchip Technology

SIC 2N-CH 700V 241A SP3F

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Stock9
MSCSM70TAM19CT3AG
Microchip Technology

SIC 6N-CH 700V 124A SP3F

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Stock9
MSCSM70TLM19C3AG
Microchip Technology

SIC 4N-CH 700V 124A SP3F

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Stock15
MSCSM120AM042CT6LIAG
Microchip Technology

SIC 2N-CH 1200V 495A SP6C LI

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MSCSM170AM058CT6LIAG
Microchip Technology

SIC 2N-CH 1700V 353A

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Stock6
MSCSM70VR1M10CT3AG
Microchip Technology

SIC 2N-CH 700V 241A

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Stock12
MSCSM120DUM027AG
Microchip Technology

SIC 2N-CH 1200V 733A

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MSCSM170HM45CT3AG
Microchip Technology

SIC 4N-CH 1700V 64A

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Stock12
MSCSM70TLM05CAG
Microchip Technology

SIC 4N-CH 700V 464A SP6C

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Stock15
MSCSM120DUM042AG
Microchip Technology

SIC 2N-CH 1200V 495A

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MSCSM120AM11T3AG
Microchip Technology

SIC 2N-CH 1200V 254A

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MSCSM70TLM10C3AG
Microchip Technology

SIC 4N-CH 700V 241A MODULE

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Stock45

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MSCMC170AM08CT6LIAG	Microchip Technology	SIC 2N-CH 1700V 280A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 300A, 20V Vgs(th) (Max) @ Id: 4V @ 108mA Gate Charge (Qg) (Max) @ Vgs: 1128nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 1000V Power - Max: 1780W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	Package: -	Request a Quote	-	1700V (1.7kV)	280A (Tc)	11.7mOhm @ 300A, 20V	4V @ 108mA	1128nC @ 20V	22000pF @ 1000V	1780W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP6C LI
MSCSM70AM025T6AG	Microchip Technology	SIC 2N-CH 700V 689A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Power - Max: 1.882kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA	1290nC @ 20V	27000pF @ 700V	1.882kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120DDUM16CTBL3NG	Microchip Technology	SIC 4N-CH 1200V 150A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 560W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	150A	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	560W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70HM19T3AG	Microchip Technology	SIC 4N-CH 700V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock24	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120VR1M31C1AG	Microchip Technology	SIC 2N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170HRM233AG	Microchip Technology	SIC 4N-CH 1700V/1200V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc), 89A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA, 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, 3020pF @ 1000V Power - Max: 602W (Tc), 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	124A (Tc), 89A (Tc)	22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V	3.2V @ 5mA, 2.8V @ 3mA	356nC @ 20V, 232nC @ 20V	6600pF @ 1000V, 3020pF @ 1000V	602W (Tc), 395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120TLM08CAG	Microchip Technology	SIC 4N-CH 1200V 333A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V Power - Max: 1378W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	Package: -	Stock15	-	1200V (1.2kV)	333A (Tc)	7.8mOhm @ 80A, 20V	2.8V @ 4mA	928nC @ 20V	12000pF @ 1000V	1378W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
APTMC120HR11CT3AG	Microchip Technology	SIC 2N-CH 1200V 26A SP3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Power - Max: 125W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	Package: -	Request a Quote	-	1200V (1.2kV)	26A (Tc)	98mOhm @ 20A, 20V	3V @ 5mA	62nC @ 20V	950pF @ 1000V	125W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP3
MSCSM70AM10CT3AG	Microchip Technology	SIC 2N-CH 700V 241A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	Package: -	Stock9	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70TAM19CT3AG	Microchip Technology	SIC 6N-CH 700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	Package: -	Stock9	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70TLM19C3AG	Microchip Technology	SIC 4N-CH 700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	Package: -	Stock15	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM120AM042CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 495A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	Package: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18100pF @ 1kV	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
MSCSM170AM058CT6LIAG	Microchip Technology	SIC 2N-CH 1700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Power - Max: 1.642kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock6	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1.642kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70VR1M10CT3AG	Microchip Technology	SIC 2N-CH 700V 241A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock12	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120DUM027AG	Microchip Technology	SIC 2N-CH 1200V 733A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Power - Max: 2968W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 9mA	2088nC @ 20V	27000pF @ 1000V	2968W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170HM45CT3AG	Microchip Technology	SIC 4N-CH 1700V 64A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock12	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70TLM05CAG	Microchip Technology	SIC 4N-CH 700V 464A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 464A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 2.4V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V Power - Max: 1277W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	Package: -	Stock15	-	700V	464A (Tc)	4.8mOhm @ 160A, 20V	2.4V @ 16mA	860nC @ 20V	18000pF @ 700V	1277W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
MSCSM120DUM042AG	Microchip Technology	SIC 2N-CH 1200V 495A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Power - Max: 2031W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18100pF @ 1000V	2031W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM11T3AG	Microchip Technology	SIC 2N-CH 1200V 254A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Power - Max: 1.067kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	254A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 9mA	696nC @ 20V	9060pF @ 1000V	1.067kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70TLM10C3AG	Microchip Technology	SIC 4N-CH 700V 241A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: Module Supplier Device Package: Module	Package: -	Stock45	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA (Typ)	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	Module	Module
MSCSM120DDUM31CTBL2NG	Microchip Technology	SIC 4N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70VR1M10CTPAG	Microchip Technology	SIC 6N-CH 700V 238A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 674W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock6	-	700V	238A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	674W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170AM45CT1AG	Microchip Technology	SIC 2N-CH 1700V 64A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM027D3AG	Microchip Technology	SIC 2N-CH 1200V 733A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.8V @ 27mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Power - Max: 2.97kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 27mA	2088nC @ 20V	27000pF @ 1000V	2.97kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120TAM16TPAG	Microchip Technology	SIC 6N-CH 1200V 171A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 728W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	171A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	728W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70TLM07CAG	Microchip Technology	SIC 4N-CH 700V 349A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 349A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Power - Max: 966W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	Package: -	Stock12	-	700V	349A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	966W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
MSCSM120HRM163AG	Microchip Technology	SIC 4N-CH 1200V/700V 173A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V Power - Max: 745W (Tc), 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV), 700V	173A (Tc), 124A (Tc)	16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V	2.8V @ 6mA, 2.4V @ 4mA	464nC, 215nC @ 20V	6040pF @ 1000V, 4500pF @ 700V	745W (Tc), 365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170HRM11NG	Microchip Technology	SIC 4N-CH 1700V/1200V 226A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 226A (Tc), 163A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA, 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, 6040pF @ 1000V Power - Max: 1.012kW (Tc), 662W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	226A (Tc), 163A (Tc)	11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V	3.2V @ 10mA, 2.8V @ 6mA	712nC @ 20V, 464nC @ 20V	13200pF @ 1000V, 6040pF @ 1000V	1.012kW (Tc), 662W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-