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Microchip Technology |
SIC 6N-CH 1200V 150A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 560W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 150A | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 560W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 700V 58A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 99nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 700V
- Power - Max: 176W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Request a Quote |
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- | 700V | 58A (Tc) | 44mOhm @ 30A, 20V | 2.7V @ 2mA | 99nC @ 20V | 2010pF @ 700V | 176W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 4N-CH 700V 124A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
- Power - Max: 365W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Request a Quote |
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- | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 2N-CH 1200V 79A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 1700V 238A SP6C
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
- Power - Max: 1114W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C
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Package: - |
Stock15 |
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- | 1700V (1.7kV) | 238A (Tc) | 11.3mOhm @ 120A, 20V | 3.2V @ 10mA | 712nC @ 20V | 13200pF @ 1000V | 1114W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C |
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Microchip Technology |
SIC 2N-CH 700V 124A SP1F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
- Power - Max: 365W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP1F
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Package: - |
Request a Quote |
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- | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP1F |
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Microchip Technology |
SIC 2N-CH 700V 585A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 585A (Tc)
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 200A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 1075nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 700V
- Power - Max: 1.625kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 585A (Tc) | 3.8mOhm @ 200A, 20V | 2.4V @ 20mA | 1075nC @ 20V | 22500pF @ 700V | 1.625kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 79A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
MOSFET 2N-CH 200V 280A LP8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: LP8
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Package: - |
Stock9 |
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- | 200V | 280A (Tc) | - | - | - | - | - | - | Chassis Mount | Module | LP8 |
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Microchip Technology |
SIC 2N-CH 1700V 523A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
- Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
- Power - Max: 2.4kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock3 |
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- | 1700V (1.7kV) | 523A (Tc) | 5mOhm @ 270A, 20V | 3.3V @ 22.5mA | 1602nC @ 20V | 29700pF @ 1000V | 2.4kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 805A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
- Power - Max: 3.215kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 805A (Tc) | 3.1mOhm @ 400A, 20V | 2.8V @ 30mA | 2320nC @ 20V | 30200pF @ 1000V | 3.215kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 1700V 238A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
- Power - Max: 1.114kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock27 |
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- | 1700V (1.7kV) | 238A (Tc) | 11.3mOhm @ 120A, 20V | 3.2V @ 10mA | 712nC @ 20V | 13200pF @ 1000V | 1.114kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 337A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
- Power - Max: 1409W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 80A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12100pF @ 1000V | 1409W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 4N-CH 1200V 79A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 6N-CH 1700V 179A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
- Power - Max: 843W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock30 |
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- | 1700V (1.7kV) | 179A (Tc) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V | 843W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 6N-CH 1200V 89A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Stock9 |
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- | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 6N-CH 700V 124A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
- Power - Max: 365W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock3 |
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- | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
MOSFET 2N-CH 600V 81A SP4
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP4
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Package: - |
Request a Quote |
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- | 600V | 81A (Tc) | - | - | - | - | - | - | Chassis Mount | Module | SP4 |
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Microchip Technology |
SIC 4N-CH 1700V 179A SP6C
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
- Power - Max: 843W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C
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Package: - |
Stock15 |
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- | 1700V (1.7kV) | 179A (Tc) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V | 843W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C |
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Microchip Technology |
SIC 2N-CH 700V 353A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
- Power - Max: 988W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Request a Quote |
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- | 700V | 353A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 988W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 4N-CH 1200V 79A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 6N-CH 1200V 251A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
- Power - Max: 1.042kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 9mA | 696nC @ 20V | 9060pF @ 1000V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1700V 240A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
- Power - Max: 1.14kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock12 |
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- | 1700V (1.7kV) | 240A (Tc) | 11.3mOhm @ 120A, 20V | 3.2V @ 10mA | 712nC @ 20V | 13200pF @ 1000V | 1.14kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 4N-CH 1700V/1200V 64A/89A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc), 89A (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, 3020pF @ 1000V
- Power - Max: 319W (Tc), 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1700V (1.7kV), 1200V (1.2kV) | 64A (Tc), 89A (Tc) | 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V | 3.2V @ 2.5mA, 2.8V @ 3mA | 178nC @ 20V, 232nC @ 20V | 3300pF @ 1000V, 3020pF @ 1000V | 319W (Tc), 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1700V 181A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
- Power - Max: 862W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Stock15 |
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- | 1700V (1.7kV) | 181A (Tc) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V | 862W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Microchip Technology |
SIC 4N-CH 1200V/700V 89A/124A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc), 124A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA, 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, 4500pF @ 700V
- Power - Max: 395W (Tc), 365W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV), 700V | 89A (Tc), 124A (Tc) | 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V | 2.8V @ 3mA, 2.4V @ 4mA | 232nC @ 20V, 215nC @ 20V | 3020pF @ 1000V, 4500pF @ 700V | 395W (Tc), 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 2N-CH 1200V 495A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 18mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
- Power - Max: 2.031kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 18mA | 1392nC @ 20V | 18100pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 6N-CH 700V 238A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
- Power - Max: 674W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 238A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 674W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |