Microchip Technology Products - Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 150V 8SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

MOSFET N/P-CH 200V 8SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

MOSFET N/P-CH 200V 8VDFN

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-DFN (4x4)

MOSFET ARRAY N/P-CH 200V 8VDFN

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-VDFN (6x5)

MOSFET 2N-CH 250V 1.1A 8VDFN

• FET Type: 2 N-Channel (Dual)
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 1.1A
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-DFN (5x5)

MOSFET 6N/6P-CH 200V 56VQFN

• FET Type: 6 N and 6 P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 56-VFQFN Exposed Pad
• Supplier Device Package: 56-QFN (8x8)

SIC 2N-CH 1200V 173A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
• Power - Max: 745W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 2N-CH 1200V 173A SP3F

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
• Power - Max: 745W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: SP3F

SIC 2N-CH 1200V 947A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
• Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 36mA
• Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
• Power - Max: 3.75kW (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 4N-CH 1200V 89A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
• Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
• Power - Max: 395W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 2N-CH 1200V 79A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 79A
• Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
• Power - Max: 310W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 4N-CH 1200V/700V 472A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
• Current - Continuous Drain (Id) @ 25°C: 472A (Tc), 442A (Tc)
• Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 18mA, 2.4V @ 16mA
• Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, 860nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, 18000pF @ 700V
• Power - Max: 1.846kW (Tc), 1.161kW (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 6N-CH 1200V 171A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
• Power - Max: 728W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 2N-CH 1200V 73A SP3

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
• Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
• Vgs(th) (Max) @ Id: 3V @ 12.5mA
• Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
• Power - Max: 375W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: SP3

SIC 2N-CH 1700V 124A SP3F

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
• Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
• Vgs(th) (Max) @ Id: 3.2V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
• Power - Max: 602W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: SP3F

SIC MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

SIC 2N-CH 1700V 676A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 676A (Tc)
• Rds On (Max) @ Id, Vgs: 3.75mOhm @ 360A, 20V
• Vgs(th) (Max) @ Id: 3.3V @ 30mA
• Gate Charge (Qg) (Max) @ Vgs: 2136nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 1000V
• Power - Max: 3kW (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 2N-CH 1200V 495A SP6C

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
• Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
• Power - Max: 2.031kW (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: SP6C

SIC 2N-CH 700V 689A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
• Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 24mA
• Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
• Power - Max: 1.882kW (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 4N-CH 1200V 147A SP3

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
• Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V
• Vgs(th) (Max) @ Id: 4V @ 30mA
• Gate Charge (Qg) (Max) @ Vgs: 332nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5576pF @ 1000V
• Power - Max: 750W
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: SP3

SIC 6N-CH 1200V 171A SP6-P

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
• Power - Max: 728W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: SP6-P

SIC 4N-CH 1200V 150A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 150A
• Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
• Power - Max: 560W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

MOSFET 600V 19A SP3F

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: SP3F

SIC 2N-CH 700V 124A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
• Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
• Power - Max: 365W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 6N-CH 1700V 122A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
• Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
• Vgs(th) (Max) @ Id: 3.2V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
• Power - Max: 588W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 2N-CH 700V 241A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
• Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
• Power - Max: 690W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 2N-CH 1200V 79A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 79A
• Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
• Power - Max: 310W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

SIC 2N-CH 700V 689A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
• Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 24mA
• Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
• Power - Max: 1.882kW (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -