|
|
|
Microchip Technology |
MOSFET P-CH 220V 0.26A SOT89-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 220V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock4,912 |
|
MOSFET (Metal Oxide) | 220V | 260mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 125pF @ 25V | ±20V | - | 1.6W (Ta) | 12 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
|
|
Microchip Technology |
MOSFET N-CH 200V 0.25A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,944 |
|
MOSFET (Metal Oxide) | 200V | 250mA (Tj) | 5V, 10V | 1.6V @ 1mA | - | 150pF @ 25V | ±20V | - | 1W (Tc) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 200V 0.25A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,240 |
|
MOSFET (Metal Oxide) | 200V | 250mA (Tj) | 5V, 10V | 1.6V @ 1mA | - | 150pF @ 25V | ±20V | - | 1W (Tc) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET P-CH 200V 0.26A SOT89-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock73,944 |
|
MOSFET (Metal Oxide) | 200V | 260mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 125pF @ 25V | ±20V | - | 1.6W (Ta) | 12 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
|
|
Microchip Technology |
MOSFET N-CH 400V 0.175A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,152 |
|
MOSFET (Metal Oxide) | 400V | 175mA (Tj) | 4.5V, 10V | 2V @ 1mA | - | 125pF @ 25V | ±20V | - | 1W (Ta) | 12 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 350V 365MA SOT89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 365mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 750mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock7,568 |
|
MOSFET (Metal Oxide) | 350V | 365mA (Tj) | 3V, 10V | 2.5V @ 1mA | - | 200pF @ 25V | ±20V | - | 1.6W (Ta) | 6 Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
|
|
Microchip Technology |
MOSFET N-CH 600V 0.16A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,928 |
|
MOSFET (Metal Oxide) | 600V | 160mA (Tj) | 4.5V, 10V | 4V @ 2mA | - | 150pF @ 25V | ±20V | - | 1W (Ta) | 20 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Microchip Technology |
MOSFET N-CH 600V 0.16A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,608 |
|
MOSFET (Metal Oxide) | 600V | 160mA (Tj) | 4.5V, 10V | 4V @ 2mA | - | 150pF @ 25V | ±20V | - | 1W (Ta) | 20 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,208 |
|
MOSFET (Metal Oxide) | 60V | 330mA (Tj) | 10V | 2V @ 1mA | - | 50pF @ 25V | ±30V | - | 1W (Tc) | 3 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Microchip Technology |
MOSFET P-CH 20V 0.63A SOT89-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 630mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock285,996 |
|
MOSFET (Metal Oxide) | 20V | 630mA (Tj) | 5V, 10V | 2.4V @ 1mA | - | 125pF @ 20V | ±20V | - | 1.6W (Ta) | 2 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
|
|
Microchip Technology |
MOSFET N-CH 25V 480MA SOT89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock5,088 |
|
MOSFET (Metal Oxide) | 25V | 480mA (Tj) | 3V, 10V | 2.5V @ 1mA | - | 200pF @ 25V | ±20V | - | 1.6W (Tc) | 3.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
|
|
|
Microchip Technology |
MOSFET N-CH 30V 640MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,808 |
|
MOSFET (Metal Oxide) | 30V | 640mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 190pF @ 20V | ±30V | - | 1W (Tc) | 1.2 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Microchip Technology |
MOSFET N-CH 18V 400MA SOT89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 18V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 3V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 200mA, 3V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock30,000 |
|
MOSFET (Metal Oxide) | 18V | 400mA (Tj) | 1.2V, 3V | 1V @ 1mA | - | 110pF @ 15V | ±20V | - | 1.6W (Tc) | 2.5 Ohm @ 200mA, 3V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
|
|
Microchip Technology |
MOSFET N-CH 500V 0.25A SOT89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 13 Ohm @ 400mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock20,940 |
|
MOSFET (Metal Oxide) | 500V | 250mA (Tj) | 4.5V, 10V | 4V @ 1mA | - | 150pF @ 25V | ±20V | - | 1.6W (Ta) | 13 Ohm @ 400mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
|
|
Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,904 |
|
MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 1.6V @ 1mA | - | 190pF @ 20V | ±20V | - | 740mW (Ta) | 750 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,912 |
|
MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 1.6V @ 1mA | - | 190pF @ 20V | ±20V | - | 740mW (Ta) | 750 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 40V 0.89A SOT89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 890mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock134,412 |
|
MOSFET (Metal Oxide) | 40V | 890mA (Tj) | 5V, 10V | 1.6V @ 1mA | - | 125pF @ 20V | ±20V | - | 1.6W (Tc) | 1 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
|
|
Microchip Technology |
MOSFET N-CH 100V 500MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,344 |
|
MOSFET (Metal Oxide) | 100V | 500mA (Tj) | 3V, 10V | 2V @ 1mA | - | 150pF @ 25V | ±20V | - | 1W (Tc) | 1.5 Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 100V 500MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,624 |
|
MOSFET (Metal Oxide) | 100V | 500mA (Tj) | 3V, 10V | 2V @ 1mA | - | 150pF @ 25V | ±20V | - | 1W (Tc) | 1.5 Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,040 |
|
MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 2V @ 1mA | - | 125pF @ 25V | ±20V | - | 1W (Tc) | 10 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,672 |
|
MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 2V @ 1mA | - | 125pF @ 25V | ±20V | - | 1W (Tc) | 10 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Microchip Technology |
MOSFET N-CH 100V 350MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,128 |
|
MOSFET (Metal Oxide) | 100V | 350mA (Tj) | 4.5V, 10V | 2V @ 500µA | - | 60pF @ 25V | ±20V | - | 1W (Tc) | 3 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,800 |
|
MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.6V @ 500µA | - | 70pF @ 20V | ±20V | - | 1W (Tc) | 1.8 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,592 |
|
MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.6V @ 500µA | - | 70pF @ 20V | ±20V | - | 1W (Tc) | 1.8 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,736 |
|
MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 2.4V @ 1mA | - | 150pF @ 25V | ±20V | - | 1W (Tc) | 3.5 Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,696 |
|
MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 2.4V @ 1mA | - | 150pF @ 25V | ±20V | - | 1W (Tc) | 3.5 Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 25V 100A 8PDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 12.5V
- Vgs (Max): +10V, -8V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock4,784 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.6V @ 250µA | 22nC @ 4.5V | 1635pF @ 12.5V | +10V, -8V | - | 2.2W (Ta) | 3.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
|
|
|
Microchip Technology |
MOSFET N-CH 350V 0.23A SOT89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 15 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock6,784 |
|
MOSFET (Metal Oxide) | 350V | 230mA (Tj) | 3V, 10V | 2V @ 1mA | - | 110pF @ 25V | ±20V | - | 1.6W (Ta) | 15 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
0
Login/Register
BOM
Cart
