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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,216 |
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MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 2V @ 500µA | - | 60pF @ 25V | ±20V | - | 1W (Tc) | 3 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,544 |
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MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 2V @ 500µA | - | 60pF @ 25V | ±20V | - | 1W (Tc) | 3 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 400V 0.12A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92 (TO-226)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,808 |
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MOSFET (Metal Oxide) | 400V | 120mA (Tj) | 0V | - | - | 300pF @ 25V | ±20V | Depletion Mode | 1W (Tc) | 25 Ohm @ 120mA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 16V 1A SOT-143
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
- Vgs (Max): 16V
- FET Feature: -
- Power Dissipation (Max): 568mW (Ta)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-143
- Package / Case: TO-253-4, TO-253AA
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Package: TO-253-4, TO-253AA |
Stock80,100 |
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MOSFET (Metal Oxide) | 16V | 1A (Ta) | 2.7V, 10V | 1.4V @ 250µA | - | 100pF @ 12V | 16V | - | 568mW (Ta) | 450 mOhm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET N-CH 350V 0.11A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 110mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 15 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock14,496 |
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MOSFET (Metal Oxide) | 350V | 110mA (Tj) | 3V, 10V | 2V @ 1mA | - | 110pF @ 25V | ±20V | - | 360mW (Ta) | 15 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92 (TO-226)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,752 |
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MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | - | - | 300pF @ 25V | ±20V | Depletion Mode | 1W (Tc) | 25 Ohm @ 120mA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92 (TO-226)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,664 |
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MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | - | - | 300pF @ 25V | ±20V | Depletion Mode | 1W (Tc) | 25 Ohm @ 120mA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,568 |
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MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 5V, 10V | 2.4V @ 1mA | - | 65pF @ 25V | ±20V | - | 1W (Tc) | 3 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 40V 350MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,792 |
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MOSFET (Metal Oxide) | 40V | 350mA (Tj) | 5V, 10V | 2.4V @ 1mA | - | 65pF @ 25V | ±20V | - | 1W (Tc) | 3 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET P-CH 40V 0.175A TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,280 |
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MOSFET (Metal Oxide) | 40V | 175mA (Tj) | 4.5V, 10V | 2V @ 1mA | - | 60pF @ 25V | ±20V | - | 740mW (Ta) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 220V 0.26A SOT89-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 220V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock131,784 |
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MOSFET (Metal Oxide) | 220V | 260mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 110pF @ 25V | ±20V | - | 1.6W (Ta) | 12 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 250V 0.215A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,440 |
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MOSFET (Metal Oxide) | 250V | 215mA (Ta) | 4.5V, 10V | 2V @ 1mA | - | 110pF @ 25V | ±20V | - | 740mW (Ta) | 7 Ohm @ 1A, 10V | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 300V 0.085A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Tc)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock20,160 |
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MOSFET (Metal Oxide) | 300V | 85mA (Tj) | 4.5V | 2.4V @ 1mA | - | 50pF @ 25V | ±20V | - | 360mW (Tc) | 25 Ohm @ 120mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 250V 0.316A SOT89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 316mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock72,360 |
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MOSFET (Metal Oxide) | 250V | 316mA (Tj) | 4.5V, 10V | 2V @ 1mA | - | 110pF @ 25V | ±20V | - | 1.6W (Ta) | 7 Ohm @ 1A, 10V | - | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 220V 0.12A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 220V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,400 |
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MOSFET (Metal Oxide) | 220V | 120mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 110pF @ 25V | ±20V | - | 360mW (Ta) | 12 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,096 |
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MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 1W (Tc) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,384 |
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MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 1W (Tc) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,392 |
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MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 1W (Tc) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,816 |
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MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 1W (Tc) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 250V SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock77,280 |
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MOSFET (Metal Oxide) | 250V | 150mA (Ta) | 4.5V, 10V | 2V @ 1mA | - | 110pF @ 25V | ±20V | - | 360mW (Ta) | 7 Ohm @ 1A, 10V | - | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,048 |
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MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | - | - | 10pF @ 25V | ±20V | Depletion Mode | 740mW (Ta) | 1000 Ohm @ 500µA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,448 |
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MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | - | - | 10pF @ 25V | ±20V | Depletion Mode | 740mW (Ta) | 1000 Ohm @ 500µA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,792 |
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MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | - | - | 10pF @ 25V | ±20V | Depletion Mode | 740mW (Ta) | 1000 Ohm @ 500µA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock5,216 |
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MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | - | - | 10pF @ 25V | ±20V | Depletion Mode | 740mW (Ta) | 1000 Ohm @ 500µA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 6V 1.8A 8MSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 6V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
- Vgs (Max): 6V
- FET Feature: -
- Power Dissipation (Max): 568mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-143
- Package / Case: TO-253-4, TO-253AA
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Package: TO-253-4, TO-253AA |
Stock3,904 |
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MOSFET (Metal Oxide) | 6V | 1.8A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | - | 600pF @ 5.5V | 6V | - | 568mW (Ta) | 160 mOhm @ 100mA, 4.5V | -40°C ~ 150°C (TJ) | Surface Mount | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 1W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,952 |
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MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 400mW (Ta), 1W (Tc) | 7.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 1W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,880 |
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MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 400mW (Ta), 1W (Tc) | 7.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 500V 0.013A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock11,376 |
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MOSFET (Metal Oxide) | 500V | 13mA (Tj) | 0V | - | - | 10pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 1000 Ohm @ 500µA, 0V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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