Page 12 - Microchip Technology Products - Transistors - FETs, MOSFETs - Single

MCP87022T-U/MF
Microchip Technology

MOSFET N-CH 25V 8PDFN

Package: 8-PowerTDFN

Stock7,808
TN2510N8-G
Microchip Technology

MOSFET N-CH 100V 730MA SOT89-3

Package: TO-243AA

Stock168,492
TP5335K1-G
Microchip Technology

MOSFET P-CH 350V 0.085A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,400
TP0610T-G
Microchip Technology

MOSFET P-CH 60V 0.12A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock48,384
DN2450N8-G
Microchip Technology

MOSFET N-CH 500V 0.23A SOT89-3

Package: TO-243AA

Stock4,848
TN2124K1-G
Microchip Technology

MOSFET N-CH 240V 0.134A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock137,976
VN0109N3-G
Microchip Technology

MOSFET N-CH 90V 0.35A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock23,220
DN2450K4-G
Microchip Technology

MOSFET N-CH 500V 350MA 3DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,296
TP2104K1-G
Microchip Technology

MOSFET P-CH 40V 0.16A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock196,800
DN1509K1-G
Microchip Technology

MOSFET N-CH 90V 0.2A SOT23-5

Package: SC-74A, SOT-753

Stock7,152
MCP87055T-U/LC
Microchip Technology

MOSFET N-CH 25V 8PDFN

Package: 8-PowerTDFN

Stock5,840
MCP87090T-U/MF
Microchip Technology

MOSFET N-CH 25V 8PDFN

Package: 8-PowerTDFN

Stock144,060
MCP87090T-U/LC
Microchip Technology

MOSFET N-CH 25V 8PDFN

Package: 8-PowerTDFN

Stock6,640
MIC94050YM4-TR
Microchip Technology

MOSFET P-CH 6V 1.8A SOT-143

Package: TO-253-4, TO-253AA

Stock7,008
MCP87130T-U/MF
Microchip Technology

MOSFET N-CH 25V 8PDFN

Package: 8-PowerTDFN

Stock2,064
MCP87130T-U/LC
Microchip Technology

MOSFET N-CH 25V 8PDFN

Package: 8-PowerTDFN

Stock76,800
VP2450N8-G
Microchip Technology

MOSFET P-CH 500V 0.16A SOT89-3

Package: TO-243AA

Stock49,416
2N7002-G
Microchip Technology

MOSFET N-CH 60V 0.115A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock360,000
TP2535N3-G
Microchip Technology

MOSFET P-CH 350V 0.086A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock13,374
VN2224N3-G
Microchip Technology

MOSFET N-CH 240V 540MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,132

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
MCP87022T-U/MF	Microchip Technology	MOSFET N-CH 25V 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,808	MOSFET (Metal Oxide)	25V	100A (Tc)	4.5V, 10V	1.6V @ 250µA	29nC @ 4.5V	2310pF @ 12.5V	+10V, -8V	-	2.2W (Ta)	2.3 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
TN2510N8-G	Microchip Technology	MOSFET N-CH 100V 730MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 730mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock168,492	MOSFET (Metal Oxide)	100V	730mA (Tj)	3V, 10V	2V @ 1mA	-	125pF @ 25V	±20V	-	1.6W (Ta)	1.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
TP5335K1-G	Microchip Technology	MOSFET P-CH 350V 0.085A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 85mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 30 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,400	MOSFET (Metal Oxide)	350V	85mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	110pF @ 25V	±20V	-	360mW (Ta)	30 Ohm @ 200mA, 10V	-55°C ~ 150°C	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
TP0610T-G	Microchip Technology	MOSFET P-CH 60V 0.12A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock48,384	MOSFET (Metal Oxide)	60V	120mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	60pF @ 25V	±20V	-	360mW (Ta)	10 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
DN2450N8-G	Microchip Technology	MOSFET N-CH 500V 0.23A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 300mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock4,848	MOSFET (Metal Oxide)	500V	230mA (Tj)	0V	-	-	200pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	10 Ohm @ 300mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
TN2124K1-G	Microchip Technology	MOSFET N-CH 240V 0.134A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 134mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Tc) Rds On (Max) @ Id, Vgs: 15 Ohm @ 120mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock137,976	MOSFET (Metal Oxide)	240V	134mA (Tj)	3V, 4.5V	2V @ 1mA	-	50pF @ 25V	±20V	-	360mW (Tc)	15 Ohm @ 120mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
VN0109N3-G	Microchip Technology	MOSFET N-CH 90V 0.35A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock23,220	MOSFET (Metal Oxide)	90V	350mA (Tj)	5V, 10V	2.4V @ 1mA	-	65pF @ 25V	±20V	-	1W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN2450K4-G	Microchip Technology	MOSFET N-CH 500V 350MA 3DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 300mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,296	MOSFET (Metal Oxide)	500V	350mA (Tj)	0V	-	-	200pF @ 25V	±20V	Depletion Mode	2.5W (Ta)	10 Ohm @ 300mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TP2104K1-G	Microchip Technology	MOSFET P-CH 40V 0.16A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock196,800	MOSFET (Metal Oxide)	40V	160mA (Tj)	4.5V, 10V	2V @ 1mA	-	60pF @ 25V	±20V	-	360mW (Ta)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
DN1509K1-G	Microchip Technology	MOSFET N-CH 90V 0.2A SOT23-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-5 Package / Case: SC-74A, SOT-753	Package: SC-74A, SOT-753	Stock7,152	MOSFET (Metal Oxide)	90V	200mA (Tj)	0V	-	-	150pF @ 25V	±20V	Depletion Mode	490mW (Ta)	6 Ohm @ 200mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-5	SC-74A, SOT-753
MCP87055T-U/LC	Microchip Technology	MOSFET N-CH 25V 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,840	MOSFET (Metal Oxide)	25V	60A (Tc)	4.5V, 10V	1.7V @ 250µA	14nC @ 4.5V	890pF @ 12.5V	+10V, -8V	-	1.8W (Ta)	6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3x3)	8-PowerTDFN
MCP87090T-U/MF	Microchip Technology	MOSFET N-CH 25V 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock144,060	MOSFET (Metal Oxide)	25V	64A (Tc)	4.5V, 10V	1.7V @ 250µA	10nC @ 4.5V	580pF @ 12.5V	+10V, -8V	-	2.2W (Ta)	10.5 mOhm @ 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
MCP87090T-U/LC	Microchip Technology	MOSFET N-CH 25V 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,640	MOSFET (Metal Oxide)	25V	48A (Tc)	4.5V, 10V	1.7V @ 250µA	10nC @ 4.5V	580pF @ 12.5V	+10V, -8V	-	1.8W (Ta)	10.5 mOhm @ 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3x3)	8-PowerTDFN
MIC94050YM4-TR	Microchip Technology	MOSFET P-CH 6V 1.8A SOT-143 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock7,008	MOSFET (Metal Oxide)	6V	1.8A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	600pF @ 5.5V	6V	-	568mW (Ta)	160 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
MCP87130T-U/MF	Microchip Technology	MOSFET N-CH 25V 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,064	MOSFET (Metal Oxide)	25V	43A (Tc)	3.3V, 10V	1.7V @ 250µA	8nC @ 4.5V	400pF @ 12.5V	+10V, -8V	-	2.1W (Ta)	13.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
MCP87130T-U/LC	Microchip Technology	MOSFET N-CH 25V 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock76,800	MOSFET (Metal Oxide)	25V	43A (Tc)	3.3V, 10V	1.7V @ 250µA	8nC @ 4.5V	400pF @ 12.5V	+10V, -8V	-	1.7W (Ta)	13.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3x3)	8-PowerTDFN
VP2450N8-G	Microchip Technology	MOSFET P-CH 500V 0.16A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock49,416	MOSFET (Metal Oxide)	500V	160mA (Tj)	4.5V, 10V	3.5V @ 1mA	-	190pF @ 25V	±20V	-	1.6W (Ta)	30 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
2N7002-G	Microchip Technology	MOSFET N-CH 60V 0.115A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock360,000	MOSFET (Metal Oxide)	60V	115mA (Tj)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±30V	-	360mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23 (TO-236AB)	TO-236-3, SC-59, SOT-23-3
TP2535N3-G	Microchip Technology	MOSFET P-CH 350V 0.086A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock13,374	MOSFET (Metal Oxide)	350V	86mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	125pF @ 25V	±20V	-	740mW (Ta)	25 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2224N3-G	Microchip Technology	MOSFET N-CH 240V 540MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 540mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,132	MOSFET (Metal Oxide)	240V	540mA (Tj)	5V, 10V	3V @ 5mA	-	350pF @ 25V	±20V	-	1W (Tc)	1.25 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TP2640N3-G	Microchip Technology	MOSFET P-CH 400V 0.18A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 180mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock20,316	MOSFET (Metal Oxide)	400V	180mA (Tj)	2.5V, 10V	2V @ 1mA	-	300pF @ 25V	±20V	-	1W (Ta)	15 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN1206L-G	Microchip Technology	MOSFET N-CH 120V 0.23A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,168	MOSFET (Metal Oxide)	120V	230mA (Tj)	2.5V, 10V	2V @ 1mA	-	125pF @ 25V	±30V	-	1W (Tc)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN4012L-G	Microchip Technology	MOSFET N-CH 400V 0.16A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 12 Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,776	MOSFET (Metal Oxide)	400V	160mA (Tj)	4.5V	1.8V @ 1mA	-	110pF @ 25V	±20V	-	1W (Tc)	12 Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN0550N3-G	Microchip Technology	MOSFET N-CH 500V 50MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 50mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock8,916	MOSFET (Metal Oxide)	500V	50mA (Tj)	5V, 10V	4V @ 1mA	-	55pF @ 25V	±20V	-	1W (Tc)	60 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN0606L-G	Microchip Technology	MOSFET N-CH 60V 330MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock23,256	MOSFET (Metal Oxide)	60V	330mA (Tj)	10V	2V @ 1mA	-	50pF @ 25V	±30V	-	1W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2460N3-G	Microchip Technology	MOSFET N-CH 600V 0.16A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock17,640	MOSFET (Metal Oxide)	600V	160mA (Tj)	4.5V, 10V	4V @ 2mA	-	150pF @ 25V	±20V	-	1W (Ta)	20 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0110N3-G	Microchip Technology	MOSFET N-CH 100V 350MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock19,506	MOSFET (Metal Oxide)	100V	350mA (Tj)	4.5V, 10V	2V @ 500µA	-	60pF @ 25V	±20V	-	1W (Tc)	3 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP0109N3-G	Microchip Technology	MOSFET P-CH 90V 0.25A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock14,628	MOSFET (Metal Oxide)	90V	250mA (Tj)	5V, 10V	3.5V @ 1mA	-	60pF @ 25V	±20V	-	1W (Tc)	8 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)