Page 13 - Microchip Technology Products - Transistors - FETs, MOSFETs - Single

VN2460N8-G
Microchip Technology

MOSFET N-CH 600V 0.2A SOT89-3

Package: TO-243AA

Stock49,536
TN0104N8-G
Microchip Technology

MOSFET N-CH 40V 0.63A TO243AA

Package: TO-243AA

Stock42,840
2N7008-G
Microchip Technology

MOSFET N-CH 60V 0.23A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,792
DN2470K4-G
Microchip Technology

MOSFET N-CH 700V 0.17A 3DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,808
TP2510N8-G
Microchip Technology

MOSFET P-CH 100V 0.48A SOT89-3

Package: TO-243AA

Stock82,056
DN1509N8-G
Microchip Technology

MOSFET N-CH 90V 360MA SOT89-3

Package: TO-243AA

Stock6,512
MCP87050T-U/MF
Microchip Technology

MOSFET N-CH 25V 8PDFN

Package: 8-PowerTDFN

Stock6,960
VP2110K1-G
Microchip Technology

MOSFET P-CH 100V 0.12A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock36,840
TP2540N3-G
Microchip Technology

MOSFET P-CH 400V 0.086A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock15,528
VN2210N3-G
Microchip Technology

MOSFET N-CH 100V 1.2A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,984
VP0550N3-G
Microchip Technology

MOSFET P-CH 500V 0.054A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock13,164
TP2635N3-G
Microchip Technology

MOSFET P-CH 350V 0.18A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock22,704
TP0620N3-G
Microchip Technology

MOSFET P-CH 200V 0.175A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock21,732
DN2535N5-G
Microchip Technology

MOSFET N-CH 350V 500MA TO220-3

Package: TO-220-3

Stock6,420
TN2540N3-G
Microchip Technology

MOSFET N-CH 400V 0.175A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock18,228
VN2450N3-G
Microchip Technology

MOSFET N-CH 500V 0.2A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,984
TN2640N3-G
Microchip Technology

MOSFET N-CH 400V 0.22A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock20,292
VP3203N3-G
Microchip Technology

MOSFET P-CH 30V 650MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock10,560
LP0701N3-G
Microchip Technology

MOSFET P-CH 16.5V 0.5A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock5,888
VN3205N3-G
Microchip Technology

MOSFET N-CH 50V 1.2A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock8,436

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
VN2460N8-G	Microchip Technology	MOSFET N-CH 600V 0.2A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock49,536	MOSFET (Metal Oxide)	600V	200mA (Tj)	4.5V, 10V	4V @ 2mA	-	150pF @ 25V	±20V	-	1.6W (Ta)	20 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
TN0104N8-G	Microchip Technology	MOSFET N-CH 40V 0.63A TO243AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 630mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 1.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock42,840	MOSFET (Metal Oxide)	40V	630mA (Tj)	3V, 10V	1.6V @ 500µA	-	70pF @ 20V	±20V	-	1.6W (Tc)	2 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
2N7008-G	Microchip Technology	MOSFET N-CH 60V 0.23A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,792	MOSFET (Metal Oxide)	60V	230mA (Tj)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±30V	-	1W (Tc)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN2470K4-G	Microchip Technology	MOSFET N-CH 700V 0.17A 3DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 42 Ohm @ 100mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,808	MOSFET (Metal Oxide)	700V	170mA (Tj)	0V	-	-	540pF @ 25V	±20V	Depletion Mode	2.5W (Ta)	42 Ohm @ 100mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TP2510N8-G	Microchip Technology	MOSFET P-CH 100V 0.48A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 480mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock82,056	MOSFET (Metal Oxide)	100V	480mA (Tj)	10V	2.4V @ 1mA	-	125pF @ 25V	±20V	-	1.6W (Ta)	3.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN1509N8-G	Microchip Technology	MOSFET N-CH 90V 360MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 360mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock6,512	MOSFET (Metal Oxide)	90V	360mA (Tj)	0V	-	-	150pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	6 Ohm @ 200mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
MCP87050T-U/MF	Microchip Technology	MOSFET N-CH 25V 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,960	MOSFET (Metal Oxide)	25V	100A (Tc)	4.5V, 10V	1.6V @ 250µA	15nC @ 4.5V	1040pF @ 12.5V	+10V, -8V	-	2.2W (Ta)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
VP2110K1-G	Microchip Technology	MOSFET P-CH 100V 0.12A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock36,840	MOSFET (Metal Oxide)	100V	120mA (Tj)	5V, 10V	3.5V @ 1mA	-	60pF @ 25V	±20V	-	360mW (Ta)	12 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
TP2540N3-G	Microchip Technology	MOSFET P-CH 400V 0.086A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,528	MOSFET (Metal Oxide)	400V	86mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	125pF @ 25V	±20V	-	740mW (Ta)	25 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2210N3-G	Microchip Technology	MOSFET N-CH 100V 1.2A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,984	MOSFET (Metal Oxide)	100V	1.2A (Tj)	5V, 10V	2.4V @ 10mA	-	500pF @ 25V	±20V	-	740mW (Tc)	350 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP0550N3-G	Microchip Technology	MOSFET P-CH 500V 0.054A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 54mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 125 Ohm @ 10mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock13,164	MOSFET (Metal Oxide)	500V	54mA (Tj)	5V, 10V	4.5V @ 1mA	-	70pF @ 25V	±20V	-	1W (Tc)	125 Ohm @ 10mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TP2635N3-G	Microchip Technology	MOSFET P-CH 350V 0.18A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 180mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock22,704	MOSFET (Metal Oxide)	350V	180mA (Tj)	2.5V, 10V	2V @ 1mA	-	300pF @ 25V	±20V	-	1W (Ta)	15 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TP0620N3-G	Microchip Technology	MOSFET P-CH 200V 0.175A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock21,732	MOSFET (Metal Oxide)	200V	175mA (Tj)	5V, 10V	2.4V @ 1mA	-	150pF @ 25V	±20V	-	1W (Ta)	12 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN2535N5-G	Microchip Technology	MOSFET N-CH 350V 500MA TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,420	MOSFET (Metal Oxide)	350V	500mA (Tj)	0V	-	-	300pF @ 25V	±20V	Depletion Mode	15W (Tc)	25 Ohm @ 120mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
TN2540N3-G	Microchip Technology	MOSFET N-CH 400V 0.175A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock18,228	MOSFET (Metal Oxide)	400V	175mA (Tj)	4.5V, 10V	2V @ 1mA	-	125pF @ 25V	±20V	-	1W (Ta)	12 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2450N3-G	Microchip Technology	MOSFET N-CH 500V 0.2A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13 Ohm @ 400mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,984	MOSFET (Metal Oxide)	500V	200mA (Tj)	4.5V, 10V	4V @ 1mA	-	150pF @ 25V	±20V	-	1W (Ta)	13 Ohm @ 400mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN2640N3-G	Microchip Technology	MOSFET N-CH 400V 0.22A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 220mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock20,292	MOSFET (Metal Oxide)	400V	220mA (Tj)	4.5V, 10V	2V @ 2mA	-	225pF @ 25V	±20V	-	740mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP3203N3-G	Microchip Technology	MOSFET P-CH 30V 650MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock10,560	MOSFET (Metal Oxide)	30V	650mA (Tj)	4.5V, 10V	3.5V @ 10mA	-	300pF @ 25V	±20V	-	740mW (Ta)	600 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
LP0701N3-G	Microchip Technology	MOSFET P-CH 16.5V 0.5A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 300mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock5,888	MOSFET (Metal Oxide)	16.5V	500mA (Tj)	2V, 5V	1V @ 1mA	-	250pF @ 15V	±10V	-	1W (Tc)	1.5 Ohm @ 300mA, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
VN3205N3-G	Microchip Technology	MOSFET N-CH 50V 1.2A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock8,436	MOSFET (Metal Oxide)	50V	1.2A (Tj)	4.5V, 10V	2.4V @ 10mA	-	300pF @ 25V	±20V	-	1W (Tc)	300 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TP0604N3-G	Microchip Technology	MOSFET P-CH 40V 430MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 430mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,336	MOSFET (Metal Oxide)	40V	430mA (Tj)	5V, 10V	2.4V @ 1mA	-	150pF @ 20V	±20V	-	740mW (Ta)	2 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN0808L-G	Microchip Technology	MOSFET N-CH 80V 300MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,660	MOSFET (Metal Oxide)	80V	300mA (Tj)	10V	2V @ 1mA	-	50pF @ 25V	±30V	-	1W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TP0606N3-G	Microchip Technology	MOSFET P-CH 60V 320MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock24,360	MOSFET (Metal Oxide)	60V	320mA (Tj)	5V, 10V	2.4V @ 1mA	-	150pF @ 25V	±20V	-	1W (Tc)	3.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0106N3-G	Microchip Technology	MOSFET N-CH 60V 350MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock9,108	MOSFET (Metal Oxide)	60V	350mA (Tj)	4.5V, 10V	2V @ 500µA	-	60pF @ 25V	±20V	-	1W (Tc)	3 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP0106N3-G	Microchip Technology	MOSFET P-CH 60V 0.25A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock20,628	MOSFET (Metal Oxide)	60V	250mA (Tj)	5V, 10V	3.5V @ 1mA	-	60pF @ 25V	±20V	-	1W (Tc)	8 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN2106N3-G	Microchip Technology	MOSFET N-CH 60V 300MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock18,828	MOSFET (Metal Oxide)	60V	300mA (Tj)	4.5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	740mW (Tc)	2.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
2N7000-G	Microchip Technology	MOSFET N-CH 60V 0.2A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock16,404	MOSFET (Metal Oxide)	60V	200mA (Tj)	4.5V, 10V	3V @ 1mA	-	60pF @ 25V	±30V	-	1W (Tc)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
MCP87018T-U/MF	Microchip Technology	MOSFET N-CH 25V 100A 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2925pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,992	MOSFET (Metal Oxide)	25V	100A (Tc)	3.3V, 10V	1.6V @ 250µA	37nC @ 4.5V	2925pF @ 12.5V	+10V, -8V	-	2.2W (Ta)	1.9 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN