Page 11 - Microchip Technology Products - Transistors - FETs, MOSFETs - Single

DN2535N3-G
Microchip Technology

MOSFET N-CH 350V 0.12A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock13,284
MIC94030YM4-TR
Microchip Technology

MOSFET P-CH 16V 1A SOT-143

Package: TO-253-4, TO-253AA

Stock22,032
DN3135N8-G
Microchip Technology

MOSFET N-CH 350V 0.135A SOT89-3

Package: TO-243AA

Stock47,454
VP2206N2
Microchip Technology

MOSFET P-CH 60V 750MA 3TO-39

Package: TO-205AD, TO-39-3 Metal Can

Stock8,136
VP2206N3-G
Microchip Technology

MOSFET P-CH 60V 640MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock15,036
DN3765K4-G
Microchip Technology

MOSFET N-CH 650V 300MA 3DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock16,170
VP2450N3-G
Microchip Technology

MOSFET P-CH 500V 0.1A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,296
VP0808L-G
Microchip Technology

MOSFET P-CH 80V 0.28A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock15,396
VN2406L-G
Microchip Technology

MOSFET N-CH 240V 0.19A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock15,012
DN2540N5-G
Microchip Technology

MOSFET N-CH 400V 500MA 3TO-220

Package: TO-220-3

Stock13,284
TN0620N3-G
Microchip Technology

MOSFET N-CH 200V 0.25A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock18,360
VN0300L-G
Microchip Technology

MOSFET N-CH 30V 640MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock10,128
TN0702N3-G
Microchip Technology

MOSFET N-CH 20V 530MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock15,666
TN0604N3-G
Microchip Technology

MOSFET N-CH 40V 700MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock20,574
TN0610N3-G
Microchip Technology

MOSFET N-CH 100V 500MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock42,360
TN0104N3-G
Microchip Technology

MOSFET N-CH 40V 0.45A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock5,840
VN2410L-G
Microchip Technology

MOSFET N-CH 240V 0.19A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,000
TN0606N3-G
Microchip Technology

MOSFET N-CH 60V 500MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock13,488
VP0104N3-G
Microchip Technology

MOSFET P-CH 40V 0.25A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,536
DN2540N3-G
Microchip Technology

MOSFET N-CH 400V 0.12A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,888

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
DN2535N3-G	Microchip Technology	MOSFET N-CH 350V 0.12A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 (TO-226) Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock13,284	MOSFET (Metal Oxide)	350V	120mA (Tj)	0V	-	-	300pF @ 25V	±20V	Depletion Mode	1W (Tc)	25 Ohm @ 120mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-92 (TO-226)	TO-226-3, TO-92-3 (TO-226AA)
MIC94030YM4-TR	Microchip Technology	MOSFET P-CH 16V 1A SOT-143 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V Vgs (Max): 16V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock22,032	MOSFET (Metal Oxide)	16V	1A (Ta)	2.7V, 10V	1.4V @ 250µA	-	100pF @ 12V	16V	-	568mW (Ta)	450 mOhm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
DN3135N8-G	Microchip Technology	MOSFET N-CH 350V 0.135A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 135mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 35 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock47,454	MOSFET (Metal Oxide)	350V	135mA (Tj)	0V	-	-	120pF @ 25V	±20V	Depletion Mode	1.3W (Ta)	35 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
VP2206N2	Microchip Technology	MOSFET P-CH 60V 750MA 3TO-39 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 750mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock8,136	MOSFET (Metal Oxide)	60V	750mA (Tj)	5V, 10V	3.5V @ 10mA	-	450pF @ 25V	±20V	-	360mW (Tc)	900 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
VP2206N3-G	Microchip Technology	MOSFET P-CH 60V 640MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,036	MOSFET (Metal Oxide)	60V	640mA (Tj)	5V, 10V	3.5V @ 10mA	-	450pF @ 25V	±20V	-	740mW (Tc)	900 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN3765K4-G	Microchip Technology	MOSFET N-CH 650V 300MA 3DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock16,170	MOSFET (Metal Oxide)	650V	300mA (Tj)	0V	-	-	825pF @ 25V	±20V	Depletion Mode	2.5W (Ta)	8 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
VP2450N3-G	Microchip Technology	MOSFET P-CH 500V 0.1A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 100mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,296	MOSFET (Metal Oxide)	500V	100mA (Tj)	4.5V, 10V	3.5V @ 1mA	-	190pF @ 25V	±20V	-	740mW (Ta)	30 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP0808L-G	Microchip Technology	MOSFET P-CH 80V 0.28A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 280mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,396	MOSFET (Metal Oxide)	80V	280mA (Tj)	10V	4.5V @ 1mA	-	150pF @ 25V	±30V	-	1W (Tc)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2406L-G	Microchip Technology	MOSFET N-CH 240V 0.19A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 190mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,012	MOSFET (Metal Oxide)	240V	190mA (Tj)	2.5V, 10V	2V @ 1mA	-	125pF @ 25V	±20V	-	1W (Tc)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN2540N5-G	Microchip Technology	MOSFET N-CH 400V 500MA 3TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock13,284	MOSFET (Metal Oxide)	400V	500mA (Tj)	0V	-	-	300pF @ 25V	±20V	Depletion Mode	15W (Tc)	25 Ohm @ 120mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
TN0620N3-G	Microchip Technology	MOSFET N-CH 200V 0.25A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock18,360	MOSFET (Metal Oxide)	200V	250mA (Tj)	5V, 10V	1.6V @ 1mA	-	150pF @ 25V	±20V	-	1W (Tc)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN0300L-G	Microchip Technology	MOSFET N-CH 30V 640MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock10,128	MOSFET (Metal Oxide)	30V	640mA (Tj)	5V, 10V	2.5V @ 1mA	-	190pF @ 20V	±30V	-	1W (Tc)	1.2 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0702N3-G	Microchip Technology	MOSFET N-CH 20V 530MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 530mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 500mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,666	MOSFET (Metal Oxide)	20V	530mA (Tj)	2V, 5V	1V @ 1mA	-	200pF @ 20V	±20V	-	1W (Tc)	1.3 Ohm @ 500mA, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0604N3-G	Microchip Technology	MOSFET N-CH 40V 700MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock20,574	MOSFET (Metal Oxide)	40V	700mA (Tj)	5V, 10V	1.6V @ 1mA	-	190pF @ 20V	±20V	-	740mW (Ta)	750 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0610N3-G	Microchip Technology	MOSFET N-CH 100V 500MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock42,360	MOSFET (Metal Oxide)	100V	500mA (Tj)	3V, 10V	2V @ 1mA	-	150pF @ 25V	±20V	-	1W (Tc)	1.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0104N3-G	Microchip Technology	MOSFET N-CH 40V 0.45A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 1.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock5,840	MOSFET (Metal Oxide)	40V	450mA (Ta)	3V, 10V	1.6V @ 500µA	-	70pF @ 20V	±20V	-	1W (Tc)	1.8 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2410L-G	Microchip Technology	MOSFET N-CH 240V 0.19A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 190mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,000	MOSFET (Metal Oxide)	240V	190mA (Tj)	2.5V, 10V	2V @ 1mA	-	125pF @ 25V	±20V	-	1W (Tc)	10 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0606N3-G	Microchip Technology	MOSFET N-CH 60V 500MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock13,488	MOSFET (Metal Oxide)	60V	500mA (Tj)	3V, 10V	2V @ 1mA	-	150pF @ 25V	±20V	-	1W (Tc)	1.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP0104N3-G	Microchip Technology	MOSFET P-CH 40V 0.25A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,536	MOSFET (Metal Oxide)	40V	250mA (Tj)	5V, 10V	3.5V @ 1mA	-	60pF @ 25V	±20V	-	1W (Tc)	8 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN2540N3-G	Microchip Technology	MOSFET N-CH 400V 0.12A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 (TO-226) Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,888	MOSFET (Metal Oxide)	400V	120mA (Tj)	0V	-	-	300pF @ 25V	±20V	Depletion Mode	1W (Tc)	25 Ohm @ 120mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-92 (TO-226)	TO-226-3, TO-92-3 (TO-226AA)
DN3545N3-G	Microchip Technology	MOSFET N-CH 450V 0.136A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 (TO-226) Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock12,624	MOSFET (Metal Oxide)	450V	200mA (Ta)	0V	-	-	360pF @ 25V	±20V	Depletion Mode	740mW (Ta)	20 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-92 (TO-226)	TO-226-3, TO-92-3 (TO-226AA)
VN0106N3-G	Microchip Technology	MOSFET N-CH 60V 350MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock19,632	MOSFET (Metal Oxide)	60V	350mA (Tj)	5V, 10V	2.4V @ 1mA	-	65pF @ 25V	±20V	-	1W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN2530N3-G	Microchip Technology	MOSFET N-CH 300V 0.175A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 (TO-226) Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock10,524	MOSFET (Metal Oxide)	300V	175mA (Tj)	0V	-	-	300pF @ 25V	±20V	Depletion Mode	740mW (Ta)	12 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-92 (TO-226)	TO-226-3, TO-92-3 (TO-226AA)
TP2104N3-G	Microchip Technology	MOSFET P-CH 40V 0.175A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,216	MOSFET (Metal Oxide)	40V	175mA (Tj)	4.5V, 10V	2V @ 1mA	-	60pF @ 25V	±20V	-	740mW (Ta)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN0104N3-G	Microchip Technology	MOSFET N-CH 40V 350MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock21,048	MOSFET (Metal Oxide)	40V	350mA (Tj)	5V, 10V	2.4V @ 1mA	-	65pF @ 25V	±20V	-	1W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN5325N3-G	Microchip Technology	MOSFET N-CH 250V 0.215A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 215mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,980	MOSFET (Metal Oxide)	250V	215mA (Ta)	4.5V, 10V	2V @ 1mA	-	110pF @ 25V	±20V	-	740mW (Ta)	7 Ohm @ 1A, 10V	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN3535N8-G	Microchip Technology	MOSFET N-CH 350V 0.23A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock11,892	MOSFET (Metal Oxide)	350V	230mA (Tj)	0V	-	-	360pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	10 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN3145N8-G	Microchip Technology	MOSFET N-CH 450V 0.1A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 100mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 60 Ohm @ 100mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock33,348	MOSFET (Metal Oxide)	450V	100mA (Tj)	0V	-	-	120pF @ 25V	±20V	Depletion Mode	1.3W (Ta)	60 Ohm @ 100mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA