Page 10 - Microchip Technology Products - Transistors - FETs, MOSFETs - Single

DN2530N8-G
Microchip Technology

MOSFET N-CH 300V 0.2A SOT89-3

Package: TO-243AA

Stock5,808
VP2106N3-G
Microchip Technology

MOSFET P-CH 60V 0.25A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock52,380
LND150N3-G
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock23,220
VN10KN3-G
Microchip Technology

MOSFET N-CH 60V 310MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock19,068
MIC94053YC6-TR
Microchip Technology

MOSFET P-CH 6V 2A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock44,592
VN2222LL-G
Microchip Technology

MOSFET N-CH 60V 0.23A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,684
DN3135K1-G
Microchip Technology

MOSFET N-CH 350V 72MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock98,196
VN2106N3-G
Microchip Technology

MOSFET N-CH 60V 300MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,096
VN2110K1-G
Microchip Technology

MOSFET N-CH 100V 0.2A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock104,400
TN2106K1-G
Microchip Technology

MOSFET N-CH 60V 280MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock764,892
LND01K1-G
Microchip Technology

MOSFET N-CH 9V 330MA SOT23-5

Package: SC-74A, SOT-753

Stock72,000
VN2210N2
Microchip Technology

MOSFET N-CH 100V 1.7A TO39-3

Package: TO-205AD, TO-39-3 Metal Can

Stock5,456
2N6660
Microchip Technology

MOSFET N-CH 60V 0.41A TO39-3

Package: TO-205AD, TO-39-3 Metal Can

Stock9,852
2N6661
Microchip Technology

MOSFET N-CH 90V 350MA 3TO-39

Package: TO-205AD, TO-39-3 Metal Can

Stock16,020
TP2540N8-G
Microchip Technology

MOSFET P-CH 400V 0.125A SOT89-3

Package: TO-243AA

Stock45,636
TN2540N8-G
Microchip Technology

MOSFET N-CH 400V 260MA SOT89-3

Package: TO-243AA

Stock403,272
DN2625K4-G
Microchip Technology

MOSFET N-CH 250V 1.1A 3DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock45,660
TN2524N8-G
Microchip Technology

MOSFET N-CH 240V 360MA SOT89-3

Package: TO-243AA

Stock450,204
DN2540N8-G
Microchip Technology

MOSFET N-CH 400V 0.17A SOT89-3

Package: TO-243AA

Stock46,128
DN3545N8-G
Microchip Technology

MOSFET N-CH 450V 0.2A SOT89-3

Package: TO-243AA

Stock14,700

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
DN2530N8-G	Microchip Technology	MOSFET N-CH 300V 0.2A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock5,808	MOSFET (Metal Oxide)	300V	200mA (Tj)	0V	-	-	300pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	12 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
VP2106N3-G	Microchip Technology	MOSFET P-CH 60V 0.25A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock52,380	MOSFET (Metal Oxide)	60V	250mA (Tj)	5V, 10V	3.5V @ 1mA	-	60pF @ 25V	±20V	-	1W (Tc)	12 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G	Microchip Technology	MOSFET N-CH 500V 30MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock23,220	MOSFET (Metal Oxide)	500V	30mA (Tj)	0V	-	-	10pF @ 25V	±20V	Depletion Mode	740mW (Ta)	1000 Ohm @ 500µA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN10KN3-G	Microchip Technology	MOSFET N-CH 60V 310MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock19,068	MOSFET (Metal Oxide)	60V	310mA (Tj)	5V, 10V	2.5V @ 1mA	-	60pF @ 25V	±30V	-	1W (Tc)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
MIC94053YC6-TR	Microchip Technology	MOSFET P-CH 6V 2A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock44,592	MOSFET (Metal Oxide)	6V	2A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	-	6V	-	270mW (Ta)	84 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
VN2222LL-G	Microchip Technology	MOSFET N-CH 60V 0.23A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400mW (Ta), 1W (Tc) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,684	MOSFET (Metal Oxide)	60V	230mA (Tj)	5V, 10V	2.5V @ 1mA	-	60pF @ 25V	±30V	-	400mW (Ta), 1W (Tc)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN3135K1-G	Microchip Technology	MOSFET N-CH 350V 72MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 72mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 35 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock98,196	MOSFET (Metal Oxide)	350V	72mA (Tj)	0V	-	-	120pF @ 25V	±20V	Depletion Mode	360mW (Ta)	35 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
VN2106N3-G	Microchip Technology	MOSFET N-CH 60V 300MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,096	MOSFET (Metal Oxide)	60V	300mA (Tj)	5V, 10V	2.4V @ 1mA	-	50pF @ 25V	±20V	-	1W (Tc)	4 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2110K1-G	Microchip Technology	MOSFET N-CH 100V 0.2A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock104,400	MOSFET (Metal Oxide)	100V	200mA (Tj)	5V, 10V	2.4V @ 1mA	-	50pF @ 25V	±20V	-	360mW (Tc)	4 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
TN2106K1-G	Microchip Technology	MOSFET N-CH 60V 280MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock764,892	MOSFET (Metal Oxide)	60V	280mA (Tj)	4.5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	360mW (Tc)	2.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
LND01K1-G	Microchip Technology	MOSFET N-CH 9V 330MA SOT23-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 9V Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 5V Vgs (Max): +0.6V, -12V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 0V Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-5 Package / Case: SC-74A, SOT-753	Package: SC-74A, SOT-753	Stock72,000	MOSFET (Metal Oxide)	9V	330mA (Tj)	0V	-	-	46pF @ 5V	+0.6V, -12V	Depletion Mode	360mW (Ta)	1.4 Ohm @ 100mA, 0V	-25°C ~ 125°C (TJ)	Surface Mount	SOT-23-5	SC-74A, SOT-753
VN2210N2	Microchip Technology	MOSFET N-CH 100V 1.7A TO39-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock5,456	MOSFET (Metal Oxide)	100V	1.7A (Tj)	5V, 10V	2.4V @ 10mA	-	500pF @ 25V	±20V	-	360mW (Tc)	350 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6660	Microchip Technology	MOSFET N-CH 60V 0.41A TO39-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock9,852	MOSFET (Metal Oxide)	60V	410mA (Ta)	5V, 10V	2V @ 1mA	-	50pF @ 24V	±20V	-	6.25W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661	Microchip Technology	MOSFET N-CH 90V 350MA 3TO-39 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock16,020	MOSFET (Metal Oxide)	90V	350mA (Tj)	5V, 10V	2V @ 1mA	-	50pF @ 24V	±20V	-	6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
TP2540N8-G	Microchip Technology	MOSFET P-CH 400V 0.125A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 125mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock45,636	MOSFET (Metal Oxide)	400V	125mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	125pF @ 25V	±20V	-	1.6W (Ta)	25 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
TN2540N8-G	Microchip Technology	MOSFET N-CH 400V 260MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock403,272	MOSFET (Metal Oxide)	400V	260mA (Tj)	4.5V, 10V	2V @ 1mA	-	125pF @ 25V	±20V	-	1.6W (Ta)	12 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN2625K4-G	Microchip Technology	MOSFET N-CH 250V 1.1A 3DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock45,660	MOSFET (Metal Oxide)	250V	1.1A (Tj)	0V	-	7.04nC @ 1.5V	1000pF @ 25V	±20V	Depletion Mode	-	3.5 Ohm @ 1A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TN2524N8-G	Microchip Technology	MOSFET N-CH 240V 360MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 360mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock450,204	MOSFET (Metal Oxide)	240V	360mA (Tj)	4.5V, 10V	2V @ 1mA	-	125pF @ 25V	±20V	-	1.6W (Tc)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN2540N8-G	Microchip Technology	MOSFET N-CH 400V 0.17A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock46,128	MOSFET (Metal Oxide)	400V	170mA (Tj)	0V	-	-	300pF @ 25V	±20V	Depletion Mode	1.6W (Tc)	25 Ohm @ 120mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN3545N8-G	Microchip Technology	MOSFET N-CH 450V 0.2A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock14,700	MOSFET (Metal Oxide)	450V	200mA (Tj)	0V	-	-	360pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	20 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN3525N8-G	Microchip Technology	MOSFET N-CH 250V 360MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 360mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock15,240	MOSFET (Metal Oxide)	250V	360mA (Tj)	0V	-	-	350pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	6 Ohm @ 200mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
LND150N8-G	Microchip Technology	MOSFET N-CH 500V 30MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	Package: TO-243AA	Stock81,594	MOSFET (Metal Oxide)	500V	30mA (Tj)	0V	-	-	10pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	1000 Ohm @ 500µA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89-3	TO-243AA
MIC94052YC6-TR	Microchip Technology	MOSFET P-CH 6V 2A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock134,706	MOSFET (Metal Oxide)	6V	2A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	-	6V	-	270mW (Ta)	84 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
LND150K1-G	Microchip Technology	MOSFET N-CH 500V 0.013A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock44,910	MOSFET (Metal Oxide)	500V	13mA (Tj)	0V	-	-	10pF @ 25V	±20V	Depletion Mode	360mW (Ta)	1000 Ohm @ 500µA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
APT1201R5BVRG	Microchip Technology	MOSFET N-CH 1200V 10A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	10A (Tc)	10V	4V @ 1mA	28 nC @ 10 V	4440 pF @ 25 V	-	-	-	1.5Ohm @ 5A, 10V	-	Through Hole	TO-247-3	TO-247-3
APT10050JVFR	Microchip Technology	MOSFET N-CH 1000V 19A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	19A (Tc)	-	4V @ 2.5mA	500 nC @ 10 V	7900 pF @ 25 V	-	-	-	500mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT5010LVFRG	Microchip Technology	MOSFET N-CH 500V 47A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	47A (Tc)	-	4V @ 2.5mA	470 nC @ 10 V	8900 pF @ 25 V	-	-	-	100mOhm @ 500mA, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT8020LLLG	Microchip Technology	MOSFET N-CH 800V 38A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	38A (Tc)	-	5V @ 2.5mA	195 nC @ 10 V	5200 pF @ 25 V	-	-	-	200mOhm @ 19A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA