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ON Semiconductor |
MOSFET P-CH 12V 10A ECH8
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-ECH
- Package / Case: 8-SMD, Flat Lead
|
Package: 8-SMD, Flat Lead |
Stock536,880 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-ECH | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET N-CH 35V 6A CPH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CPH
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock2,288 |
|
- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 30V 6A CPH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock3,888 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH 30V 5A CPH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CPH
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,584 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 500V 11A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 48.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3FS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock3,936 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | - | 48.6nC @ 10V | 1200pF @ 30V | ±30V | - | 2W (Ta), 40W (Tc) | 430 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
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|
ON Semiconductor |
MOSFET N-CH 500V 9.6A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3FS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock2,752 |
|
MOSFET (Metal Oxide) | 500V | 9.6A (Tc) | 10V | - | 38.4nC @ 10V | 1000pF @ 30V | ±30V | - | 2W (Ta), 37W (Tc) | 520 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
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|
ON Semiconductor |
MOSFET N-CH 600V 8.7A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 680 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3FS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock5,136 |
|
MOSFET (Metal Oxide) | 600V | 8.7A (Tc) | 10V | - | 46nC @ 10V | 1200pF @ 30V | ±30V | - | 2W (Ta), 40W (Tc) | 680 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
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|
ON Semiconductor |
MOSFET N-CH 60V 35A ATPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: ATPAK (2 leads+tab)
|
Package: ATPAK (2 leads+tab) |
Stock15,840 |
|
- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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|
ON Semiconductor |
MOSFET N-CH 40V 65A ATPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: ATPAK (2 leads+tab)
|
Package: ATPAK (2 leads+tab) |
Stock7,024 |
|
- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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|
ON Semiconductor |
MOSFET N-CH 30V 35A ATPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: ATPAK (2 leads+tab)
|
Package: ATPAK (2 leads+tab) |
Stock253,416 |
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- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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|
ON Semiconductor |
MOSFET P-CH 50V .07A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 3-SPA
- Package / Case: SC-72
|
Package: SC-72 |
Stock2,560 |
|
MOSFET (Metal Oxide) | 50V | 70mA (Ta) | 1.5V, 4V | - | 1.4nC @ 10V | 7.4pF @ 10V | ±10V | - | 250mW (Ta) | 23 Ohm @ 40mA, 4V | 150°C (TJ) | Through Hole | 3-SPA | SC-72 |
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|
ON Semiconductor |
MOSFET P-CH 50V .07A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 3-SPA
- Package / Case: SC-72
|
Package: SC-72 |
Stock3,488 |
|
MOSFET (Metal Oxide) | 50V | 70mA (Ta) | 1.5V, 4V | - | 1.4nC @ 10V | 7.4pF @ 10V | ±10V | - | 250mW (Ta) | 23 Ohm @ 40mA, 4V | 150°C (TJ) | Through Hole | 3-SPA | SC-72 |
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|
ON Semiconductor |
MOSFET P-CH 50V 0.07A
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-MCP
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock2,432 |
|
- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
|
|
ON Semiconductor |
MOSFET P-CH 50V .07A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-MCP
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock2,336 |
|
MOSFET (Metal Oxide) | 50V | 70mA (Ta) | 1.5V, 4V | - | 1.4nC @ 10V | 7.4pF @ 10V | ±10V | - | 150mW (Ta) | 23 Ohm @ 40mA, 4V | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
|
|
ON Semiconductor |
MOSFET N-CH 50V 0.1A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: 1.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 3-SPA
- Package / Case: SC-72
|
Package: SC-72 |
Stock3,408 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | 1.3V @ 100µA | 1.57nC @ 10V | 6.6pF @ 10V | ±10V | - | 250mW (Ta) | 7.8 Ohm @ 50mA, 4V | 150°C (TJ) | Through Hole | 3-SPA | SC-72 |
|
|
ON Semiconductor |
MOSFET N-CH 50V 0.1A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-MCP
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock642,900 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | - | 1.57nC @ 10V | 6.6pF @ 10V | ±10V | - | 150mW (Ta) | 7.8 Ohm @ 50mA, 4V | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
|
|
ON Semiconductor |
MOSFET P-CH 30V 0.1A
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMCP
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock247,680 |
|
- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | SMCP | SC-75, SOT-416 |
|
|
ON Semiconductor |
MOSFET N-CH 30V 0.15A
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMCP
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock48,000 |
|
- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | SMCP | SC-75, SOT-416 |
|
|
ON Semiconductor |
MOSFET N-CH 600V 17A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P-3L
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock3,328 |
|
MOSFET (Metal Oxide) | 600V | 17A (Ta) | 10V | - | 46nC @ 10V | 1200pF @ 30V | ±30V | - | 2.5W (Ta), 170W (Tc) | 610 mOhm @ 7A, 10V | 150°C (TJ) | Through Hole | TO-3P-3L | TO-3P-3, SC-65-3 |
|
|
ON Semiconductor |
MOSFET N-CH 500V 20A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P-3L
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock3,840 |
|
MOSFET (Metal Oxide) | 500V | 20A (Ta) | 10V | - | 46.6nC @ 10V | 1200pF @ 30V | ±30V | - | 2.5W (Ta), 170W (Tc) | 430 mOhm @ 8A, 10V | 150°C (TJ) | Through Hole | TO-3P-3L | TO-3P-3, SC-65-3 |
|
|
ON Semiconductor |
MOSFET N-CH 600V 8.5A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 940 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3FS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock7,536 |
|
MOSFET (Metal Oxide) | 600V | 6.9A (Tc) | 10V | - | 29nC @ 10V | 750pF @ 30V | ±30V | - | 2W (Ta), 35W (Tc) | 940 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
|
|
ON Semiconductor |
MOSFET N-CH 650V 11A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3FS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock5,136 |
|
MOSFET (Metal Oxide) | 650V | 7.5A (Tc) | 10V | - | 37.6nC @ 10V | 1000pF @ 30V | ±30V | - | 2W (Ta), 37W (Tc) | 850 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
|
|
ON Semiconductor |
MOSFET N-CH 600V 14A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3FS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,384 |
|
MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | - | 46nC @ 10V | 1200pF @ 30V | ±30V | - | 2W (Ta), 40W (Tc) | 610 mOhm @ 7A, 10V | 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
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|
ON Semiconductor |
MOSFET N-CH 500V 16A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3FS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock6,352 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | - | 46.6nC @ 10V | 1200pF @ 30V | ±30V | - | 2W (Ta), 40W (Tc) | 430 mOhm @ 8A, 10V | 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
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|
ON Semiconductor |
MOSFET N-CH 100V 26A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 13A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,864 |
|
MOSFET (Metal Oxide) | 100V | 26A (Ta) | 4V, 10V | - | 44nC @ 10V | 2150pF @ 20V | ±20V | - | 1.65W (Ta), 50W (Tc) | 60 mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | TO-263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
ON Semiconductor |
MOSFET N-CH 100V 20A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3SG
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock7,872 |
|
MOSFET (Metal Oxide) | 100V | 20A (Ta) | 4V, 10V | - | 44nC @ 10V | 2150pF @ 20V | ±20V | - | 2W (Ta), 25W (Tc) | 60 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220F-3SG | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 0.115A SC70
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3 (SOT323)
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock4,208 |
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- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET N-CH 600V 4A TO-220F-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2.34 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,200 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | - | 14.3nC @ 10V | 360pF @ 30V | ±30V | - | 2W (Ta), 30W (Tc) | 2.34 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |