Page 72 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STW38NB20
STMicroelectronics

MOSFET N-CH 200V 38A TO-247

Package: TO-247-3

Stock5,680
STP19NB20
STMicroelectronics

MOSFET N-CH 200V 19A TO-220

Package: TO-220-3

Stock33,000
STP4NB100
STMicroelectronics

MOSFET N-CH 1KV 3.8A TO-220

Package: TO-220-3

Stock6,160
STW8NB100
STMicroelectronics

MOSFET N-CH 1KV 7.3A TO-247

Package: TO-247-3

Stock94,644
STP50NE10
STMicroelectronics

MOSFET N-CH 100V 50A TO-220

Package: TO-220-3

Stock6,880
STW60NE10
STMicroelectronics

MOSFET N-CH 100V 60A TO-247

Package: TO-247-3

Stock28,848
STP3NB100
STMicroelectronics

MOSFET N-CH 1KV 3A TO-220

Package: TO-220-3

Stock74,712
IRFP250
STMicroelectronics

MOSFET N-CH 200V 33A TO-247

Package: TO-247-3

Stock137,112
STB21NM50N
STMicroelectronics

MOSFET N-CH 500V 18A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,600
STB45NF06
STMicroelectronics

MOSFET N-CH 60V 38A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock816,372
STB70NFS03LT4
STMicroelectronics

MOSFET N-CH 30V 70A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock129,600
STD3NM60T4
STMicroelectronics

MOSFET N-CH 600V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock180,036
STF7NM50N
STMicroelectronics

MOSFET N-CH 500V 5A TO-220FP

Package: TO-220-3 Full Pack

Stock298,860
STL100NH3LL
STMicroelectronics

MOSFET N-CH 30V 100A PWRFLAT6X5

Package: 8-PowerVDFN

Stock113,796
STN5PF02V
STMicroelectronics

MOSFET P-CH 20V 4.2A SOT223

Package: TO-261-4, TO-261AA

Stock31,200
STP19NM65N
STMicroelectronics

MOSFET N-CH 650V 15.5A TO-220

Package: TO-220-3

Stock4,080
STP20NF06
STMicroelectronics

MOSFET N-CH 60V 20A TO-220

Package: TO-220-3

Stock216,132
STP23NM60N
STMicroelectronics

MOSFET N-CH 600V 19A TO-220

Package: TO-220-3

Stock6,752
STP24NM65N
STMicroelectronics

MOSFET N-CH 650V 19A TO-220

Package: TO-220-3

Stock15,348
STP6NM60N
STMicroelectronics

MOSFET N-CH 600V 4.6A TO-220

Package: TO-220-3

Stock6,396

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STW38NB20	STMicroelectronics	MOSFET N-CH 200V 38A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 19A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,680	MOSFET (Metal Oxide)	200V	38A (Tc)	10V	5V @ 250µA	95nC @ 10V	3800pF @ 25V	±30V	-	180W (Tc)	65 mOhm @ 19A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP19NB20	STMicroelectronics	MOSFET N-CH 200V 19A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock33,000	MOSFET (Metal Oxide)	200V	19A (Tc)	10V	5V @ 250µA	40nC @ 10V	1000pF @ 25V	±30V	-	125W (Tc)	180 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP4NB100	STMicroelectronics	MOSFET N-CH 1KV 3.8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,160	MOSFET (Metal Oxide)	1000V	3.8A (Tc)	10V	5V @ 250µA	45nC @ 10V	1400pF @ 25V	±30V	-	125W (Tc)	4.4 Ohm @ 2A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW8NB100	STMicroelectronics	MOSFET N-CH 1KV 7.3A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 1.45 Ohm @ 3.6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock94,644	MOSFET (Metal Oxide)	1000V	7.3A (Tc)	10V	5V @ 250µA	95nC @ 10V	2900pF @ 25V	±30V	-	190W (Tc)	1.45 Ohm @ 3.6A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP50NE10	STMicroelectronics	MOSFET N-CH 100V 50A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,880	MOSFET (Metal Oxide)	100V	50A (Tc)	10V	4V @ 250µA	166nC @ 10V	6000pF @ 25V	±20V	-	180W (Tc)	27 mOhm @ 25A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW60NE10	STMicroelectronics	MOSFET N-CH 100V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock28,848	MOSFET (Metal Oxide)	100V	60A (Tc)	10V	4V @ 250µA	185nC @ 10V	5300pF @ 25V	±20V	-	180W (Tc)	22 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP3NB100	STMicroelectronics	MOSFET N-CH 1KV 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock74,712	MOSFET (Metal Oxide)	1000V	3A (Tc)	10V	4V @ 250µA	30nC @ 10V	700pF @ 25V	±30V	-	100W (Tc)	6 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP250	STMicroelectronics	MOSFET N-CH 200V 33A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock137,112	MOSFET (Metal Oxide)	200V	33A (Tc)	10V	4V @ 250µA	158nC @ 10V	2850pF @ 25V	±20V	-	180W (Tc)	85 mOhm @ 16A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STB21NM50N	STMicroelectronics	MOSFET N-CH 500V 18A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,600	MOSFET (Metal Oxide)	500V	18A (Tc)	10V	4V @ 250µA	65nC @ 10V	1950pF @ 25V	±25V	-	140W (Tc)	190 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB45NF06	STMicroelectronics	MOSFET N-CH 60V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock816,372	MOSFET (Metal Oxide)	60V	38A (Tc)	10V	4V @ 250µA	58nC @ 10V	980pF @ 25V	±20V	-	80W (Tc)	28 mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB70NFS03LT4	STMicroelectronics	MOSFET N-CH 30V 70A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock129,600	MOSFET (Metal Oxide)	30V	70A (Tc)	5V, 10V	1V @ 250µA	30nC @ 5V	1440pF @ 25V	±18V	-	100W (Tc)	9.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD3NM60T4	STMicroelectronics	MOSFET N-CH 600V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock180,036	MOSFET (Metal Oxide)	600V	3A (Tc)	10V	5V @ 250µA	14nC @ 10V	324pF @ 25V	±30V	-	42W (Tc)	1.5 Ohm @ 1.5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STF7NM50N	STMicroelectronics	MOSFET N-CH 500V 5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock298,860	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	12nC @ 10V	400pF @ 50V	±25V	-	20W (Tc)	780 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STL100NH3LL	STMicroelectronics	MOSFET N-CH 30V 100A PWRFLAT6X5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock113,796	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	40nC @ 4.5V	4450pF @ 25V	±16V	-	80W (Tc)	3.5 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STN5PF02V	STMicroelectronics	MOSFET P-CH 20V 4.2A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock31,200	MOSFET (Metal Oxide)	20V	4.2A (Tc)	2.5V, 4.5V	450mV @ 250µA	6nC @ 2.5V	412pF @ 15V	±8V	-	2.5W (Tc)	80 mOhm @ 2.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STP19NM65N	STMicroelectronics	MOSFET N-CH 650V 15.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,080	MOSFET (Metal Oxide)	650V	15.5A (Tc)	10V	4V @ 250µA	55nC @ 10V	1900pF @ 50V	±25V	-	150W (Tc)	270 mOhm @ 7.75A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP20NF06	STMicroelectronics	MOSFET N-CH 60V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock216,132	MOSFET (Metal Oxide)	60V	20A (Tc)	10V	4V @ 250µA	18nC @ 10V	400pF @ 25V	±20V	-	60W (Tc)	70 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP23NM60N	STMicroelectronics	MOSFET N-CH 600V 19A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,752	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	4V @ 250µA	60nC @ 10V	2050pF @ 50V	±25V	-	150W (Tc)	180 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP24NM65N	STMicroelectronics	MOSFET N-CH 650V 19A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock15,348	MOSFET (Metal Oxide)	650V	19A (Tc)	10V	4V @ 250µA	70nC @ 10V	2500pF @ 50V	±25V	-	160W (Tc)	190 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP6NM60N	STMicroelectronics	MOSFET N-CH 600V 4.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,396	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	4V @ 250µA	13nC @ 10V	420pF @ 50V	±25V	-	45W (Tc)	920 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP7NM50N	STMicroelectronics	MOSFET N-CH 500V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock120,468	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	12nC @ 10V	400pF @ 50V	±25V	-	45W (Tc)	780 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP8NM60	STMicroelectronics	MOSFET N-CH 650V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock10,896	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	5V @ 250µA	18nC @ 10V	400pF @ 25V	±30V	-	100W (Tc)	1 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STQ3NK50ZR-AP	STMicroelectronics	MOSFET N-CH 500V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,136	MOSFET (Metal Oxide)	500V	500mA (Tc)	10V	4.5V @ 50µA	15nC @ 10V	280pF @ 25V	±30V	-	3W (Tc)	3.3 Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
STS15N4LLF3	STMicroelectronics	MOSFET N-CH 40V 15A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock496,836	MOSFET (Metal Oxide)	40V	15A (Tc)	4.5V, 10V	1V @ 250µA	28nC @ 4.5V	2530pF @ 25V	±16V	-	2.7W (Tc)	5 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STW25NM60N	STMicroelectronics	MOSFET N-CH 600V 21A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock65,940	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	84nC @ 10V	2400pF @ 50V	±25V	-	160W (Tc)	160 mOhm @ 10.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STE70NM60	STMicroelectronics	MOSFET N-CH 600V 70A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	Package: ISOTOP	Stock5,376	MOSFET (Metal Oxide)	600V	70A	10V	5V @ 250µA	266nC @ 10V	7300pF @ 25V	±30V	-	600W (Tc)	55 mOhm @ 30A, 10V	150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP
SCTWA50N120	STMicroelectronics	MOSFET N-CH SICFET 1.2KV HIP247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 318W (Tc) Rds On (Max) @ Id, Vgs: 69 mOhm @ 40A, 20V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247? Package / Case: TO-247-3	Package: TO-247-3	Stock4,480	SiCFET (Silicon Carbide)	1200V	65A (Tc)	20V	3V @ 1mA	122nC @ 20V	1900pF @ 400V	+25V, -10V	-	318W (Tc)	69 mOhm @ 40A, 20V	-55°C ~ 200°C (TJ)	Through Hole	HiP247?	TO-247-3
STE48NM50	STMicroelectronics	MOSFET N-CH 550V 48A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 48A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 24A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	Package: ISOTOP	Stock5,216	MOSFET (Metal Oxide)	550V	48A	10V	5V @ 250µA	117nC @ 10V	3700pF @ 25V	±30V	-	450W (Tc)	100 mOhm @ 24A, 10V	150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP