Page 1087 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFH4213DTRPBF
Infineon Technologies

MOSFET N-CH 25V 40A 8PQFN

Package: 8-PowerTDFN

Stock7,344
IXFH35N30Q
IXYS

MOSFET N-CH TO-247AD

Package: TO-247-3

Stock2,496
SI4493DY-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock558,024
2SK2507(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 50V 25A TO220NIS

Package: TO-220-3 Full Pack

Stock6,464
NTD25P03LRLG
ON Semiconductor

MOSFET P-CH 30V 25A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,880
FDC699P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 7A SSOT-6

Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

Stock4,240
STD65NF06
STMicroelectronics

MOSFET N-CH 60V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,000
IXFN25N90
IXYS

MOSFET N-CH 900V 25A SOT-227B

Package: SOT-227-4, miniBLOC

Stock2,304
FDMS9409L_F085
Fairchild/ON Semiconductor

N-CHANNEL POWER TRENCH MOSFET

Package: -

Stock2,320
DMP6110SSDQ-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,768
STP23NM50N
STMicroelectronics

MOSFET N-CH 500V 17A TO-220

Package: TO-220-3 Formed Leads

Stock6,224
STP12NK30Z
STMicroelectronics

MOSFET N-CH 300V 9A TO-220

Package: TO-220-3

Stock499,404
SI8489EDB-T2-E1
Vishay Siliconix

MOSFET P-CH 20V MICROFOOT

Package: 4-UFBGA

Stock6,744
FDP090N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A TO-220

Package: TO-220-3

Stock140,520
FCMT299N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 12A POWER88

Package: 4-PowerTSFN

Stock2,784
PMV100XPEAR
Nexperia USA Inc.

PMV100XPEA/TO-236AB/REEL 7" Q3

Package: TO-236-3, SC-59, SOT-23-3

Stock25,764
IXFT44N50P
IXYS

MOSFET N-CH 500V 44A TO-268 D3

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock6,320
RJK0348DSP-00-J0
Renesas Electronics Corporation

MOSFET N-CH 30V 22A 8SOP

Package: -

Request a Quote
BSS138-13P
Micro Commercial Co

Interface

Package: -

Request a Quote
RSR020N06HZGTL
Rohm Semiconductor

MOSFET N-CH 60V 2A TSMT3

Package: -

Stock23,979

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFH4213DTRPBF	Infineon Technologies	MOSFET N-CH 25V 40A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.35 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,344	MOSFET (Metal Oxide)	25V	40A (Ta)	4.5V, 10V	2.1V @ 100µA	55nC @ 10V	3520pF @ 13V	±20V	-	3.6W (Ta), 96W (Tc)	1.35 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerTDFN
IXFH35N30Q	IXYS	MOSFET N-CH TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,496	MOSFET (Metal Oxide)	300V	35A (Tc)	10V	4V @ 4mA	200nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	100 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
SI4493DY-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock558,024	MOSFET (Metal Oxide)	20V	10A (Ta)	2.5V, 4.5V	1.4V @ 250µA	110nC @ 4.5V	-	±12V	-	1.5W (Ta)	7.75 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
2SK2507(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 50V 25A TO220NIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,464	MOSFET (Metal Oxide)	50V	25A (Ta)	4V, 10V	2V @ 1mA	25nC @ 10V	900pF @ 10V	±20V	-	30W (Tc)	46 mOhm @ 12A, 10V	150°C (TJ)	Through Hole	TO-220NIS	TO-220-3 Full Pack
NTD25P03LRLG	ON Semiconductor	MOSFET P-CH 30V 25A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,880	MOSFET (Metal Oxide)	30V	25A (Ta)	4V, 5V	2V @ 250µA	20nC @ 5V	1260pF @ 25V	±15V	-	75W (Tj)	80 mOhm @ 25A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FDC699P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 7A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 FLMP Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	Stock4,240	MOSFET (Metal Oxide)	20V	7A (Ta)	2.5V, 4.5V	1.5V @ 250µA	38nC @ 5V	2640pF @ 10V	±12V	-	2W (Ta)	22 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6 FLMP	6-SSOT Flat-lead, SuperSOT?-6 FLMP
STD65NF06	STMicroelectronics	MOSFET N-CH 60V 60A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	60V	60A (Tc)	10V	4V @ 250µA	75nC @ 10V	1700pF @ 25V	±20V	-	110W (Tc)	14 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFN25N90	IXYS	MOSFET N-CH 900V 25A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 25A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,304	MOSFET (Metal Oxide)	900V	25A	10V	5V @ 8mA	240nC @ 10V	10800pF @ 25V	±20V	-	600W (Tc)	330 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
FDMS9409L_F085	Fairchild/ON Semiconductor	N-CHANNEL POWER TRENCH MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,320	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP6110SSDQ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,768	MOSFET (Metal Oxide)	60V	7.8A (Tc)	4.5V, 10V	3V @ 250µA	17.2nC @ 10V	969pF @ 30V	±20V	-	1.2W (Ta)	105 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STP23NM50N	STMicroelectronics	MOSFET N-CH 500V 17A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Formed Leads	Package: TO-220-3 Formed Leads	Stock6,224	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	4V @ 250µA	45nC @ 10V	1330pF @ 50V	±25V	-	125W (Tc)	190 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Formed Leads
STP12NK30Z	STMicroelectronics	MOSFET N-CH 300V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock499,404	MOSFET (Metal Oxide)	300V	9A (Tc)	10V	4.5V @ 50µA	35nC @ 10V	670pF @ 25V	±30V	-	90W (Tc)	400 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI8489EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA	Package: 4-UFBGA	Stock6,744	MOSFET (Metal Oxide)	20V	-	2.5V, 10V	1.2V @ 250µA	27nC @ 10V	765pF @ 10V	±12V	-	780mW (Ta), 1.8W (Tc)	44 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-UFBGA
FDP090N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 75A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8225pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock140,520	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	4.5V @ 250µA	116nC @ 10V	8225pF @ 25V	±20V	-	208W (Tc)	9 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCMT299N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 12A POWER88 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1948pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power88 Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock2,784	MOSFET (Metal Oxide)	600V	12A (Ta)	10V	3.5V @ 250µA	51nC @ 10V	1948pF @ 380V	±20V	-	125W (Tc)	299 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power88	4-PowerTSFN
PMV100XPEAR	Nexperia USA Inc.	PMV100XPEA/TO-236AB/REEL 7" Q3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 463mW (Ta), 1.9W (Tc) Rds On (Max) @ Id, Vgs: 128 mOhm @ 2.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock25,764	MOSFET (Metal Oxide)	20V	2.4A (Ta)	2.5V, 4.5V	1.25V @ 250µA	6nC @ 4.5V	386pF @ 10V	±12V	-	463mW (Ta), 1.9W (Tc)	128 mOhm @ 2.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
IXFT44N50P	IXYS	MOSFET N-CH 500V 44A TO-268 D3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 658W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,320	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	5V @ 4mA	98nC @ 10V	5440pF @ 25V	±30V	-	658W (Tc)	140 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
RJK0348DSP-00-J0	Renesas Electronics Corporation	MOSFET N-CH 30V 22A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	22A (Ta)	-	-	34 nC @ 4.5 V	5100 pF @ 10 V	-	-	2.5W (Ta)	3.4mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
BSS138-13P	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	1.5V @ 1mA	1.65 nC @ 10 V	60 pF @ 25 V	±20V	-	350mW	2.5Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
RSR020N06HZGTL	Rohm Semiconductor	MOSFET N-CH 60V 2A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock23,979	MOSFET (Metal Oxide)	60 V	2A (Ta)	4V, 10V	2.5V @ 1mA	2.7 nC @ 5 V	180 pF @ 10 V	±20V	-	700mW (Ta)	170mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
IPT65R099CFD7XTMA1	Infineon Technologies	MOSFET N-CH 650V 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	TOLL	8-PowerSFN
MSC090SMA120B	Microsemi Corporation	MOSFET N-CH 1200V TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	TO-247-3
BUK4D122-20PX	Nexperia USA Inc.	BUK4D122-20PX FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJC7428_R1_00001	Panjit International Inc.	SOT-323, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock57,297	MOSFET (Metal Oxide)	30 V	300mA (Ta)	1.2V, 4.5V	1V @ 250µA	0.9 nC @ 4.5 V	45 pF @ 10 V	±10V	-	350mW (Ta)	1.2Ohm @ 300mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
PMPB12UNEAX	Nexperia USA Inc.	MOSFET N-CH 20V 7.9A DFN2020MD-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock3,075	MOSFET (Metal Oxide)	20 V	7.9A (Ta)	1.8V, 4.5V	900mV @ 250µA	17 nC @ 10 V	1220 pF @ 10 V	±12V	-	1.6W (Ta), 12.5W (Tc)	18mOhm @ 7.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
R8007AND3FRATL	Rohm Semiconductor	MOSFET N-CH 800V 7A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,802	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	5V @ 1mA	28 nC @ 10 V	850 pF @ 25 V	±30V	-	140W (Tc)	1.6Ohm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJC7403_R1_00001	Panjit International Inc.	20V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock4,455	MOSFET (Metal Oxide)	20 V	700mA (Ta)	1.8V, 4.5V	1V @ 250µA	2.2 nC @ 4.5 V	165 pF @ 10 V	±8V	-	350mW (Ta)	325mOhm @ 700mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
R6524ENZC17	Rohm Semiconductor	MOSFET N-CH 650V 24A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4V @ 750µA	70 nC @ 10 V	1650 pF @ 25 V	±20V	-	74W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack