Page 54 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI034NE7N3 G
Infineon Technologies

MOSFET N-CH 75V 100A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,584
BSS315PL6327HTSA1
Infineon Technologies

MOSFET P-CH 30V 1.5A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,064
BSS87E6327T
Infineon Technologies

MOSFET N-CH 240V 260MA SOT-89

Package: TO-243AA

Stock3,536
IRFU3303
Infineon Technologies

MOSFET N-CH 30V 33A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock12,300
SI4493DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,240
NTD40N03R-1G
ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock72,960
BUK714R1-40BT,118
Nexperia USA Inc.

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Stock2,100
STP200N4F3
STMicroelectronics

MOSFET N-CH 40V 120A TO-220

Package: TO-220-3

Stock7,392
AUIRFR2905ZTRL
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,600
SUD50N04-09H-E3
Vishay Siliconix

MOSFET N-CH 40V 50A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,424
CPH3356-TL-H
ON Semiconductor

MOSFET P-CH 20V 2.5A CPH3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,632
MMBF0201NLT1G
ON Semiconductor

MOSFET N-CH 20V 300MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock769,848
PSMN1R5-30YLC,115
Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

Package: SC-100, SOT-669

Stock3,344
STFW1N105K3
STMicroelectronics

MOSFET N-CH 1050V 1.4A TO3PF

Package: TO-3P-3 Full Pack

Stock19,368
CSD17507Q5A
Texas Instruments

MOSFET N-CH 30V 65A 8SON

Package: 8-PowerTDFN

Stock944,592
STP28N65M2
STMicroelectronics

MOSFET N-CH 650V 20A TO220

Package: TO-220-3

Stock23,514
P3203CMG-ML
MOSLEADER

Single N 30V 6A SOT-23

Package: -

Request a Quote
2SJ210-0-T1B-A
Renesas Electronics Corporation

P-CHANNEL SMALL SIGNAL MOSFET

Package: -

Request a Quote
R6507END3TL1
Rohm Semiconductor

650V 7A TO-252, LOW-NOISE POWER

Package: -

Stock7,431
NC1M120C12HTNG
NextGen Components

SiC MOSFET N 1200V 12mohm 214A

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI034NE7N3 G	Infineon Technologies	MOSFET N-CH 75V 100A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.8V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 37.5V Vgs (Max): - FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,584	MOSFET (Metal Oxide)	75V	100A (Tc)	-	3.8V @ 155µA	117nC @ 10V	8130pF @ 37.5V	-	-	214W (Tc)	3.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
BSS315PL6327HTSA1	Infineon Technologies	MOSFET P-CH 30V 1.5A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,064	MOSFET (Metal Oxide)	30V	1.5A (Ta)	4.5V, 10V	2V @ 11µA	2.3nC @ 5V	282pF @ 15V	±20V	-	500mW (Ta)	150 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
BSS87E6327T	Infineon Technologies	MOSFET N-CH 240V 260MA SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89-4-2 Package / Case: TO-243AA	Package: TO-243AA	Stock3,536	MOSFET (Metal Oxide)	240V	260mA (Ta)	4.5V, 10V	1.8V @ 108µA	5.5nC @ 10V	97pF @ 25V	±20V	-	1W (Ta)	6 Ohm @ 260mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89-4-2	TO-243AA
IRFU3303	Infineon Technologies	MOSFET N-CH 30V 33A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock12,300	MOSFET (Metal Oxide)	30V	33A (Tc)	10V	4V @ 250µA	29nC @ 10V	750pF @ 25V	±20V	-	57W (Tc)	31 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
SI4493DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,240	MOSFET (Metal Oxide)	20V	10A (Ta)	2.5V, 4.5V	1.4V @ 250µA	110nC @ 4.5V	-	±12V	-	1.5W (Ta)	7.75 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTD40N03R-1G	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock72,960	MOSFET (Metal Oxide)	25V	7.8A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	5.78nC @ 4.5V	584pF @ 20V	±20V	-	1.5W (Ta), 50W (Tc)	16.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
BUK714R1-40BT,118	Nexperia USA Inc.	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6808pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-426 Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Stock2,100	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	83nC @ 10V	6808pF @ 25V	±20V	Temperature Sensing Diode	272W (Tc)	4.1 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-426	TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
STP200N4F3	STMicroelectronics	MOSFET N-CH 40V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,392	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	75nC @ 10V	5100pF @ 25V	±20V	-	300W (Tc)	4.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
AUIRFR2905ZTRL	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,600	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 250µA	44nC @ 10V	1380pF @ 25V	±20V	-	110W (Tc)	14.5 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N04-09H-E3	Vishay Siliconix	MOSFET N-CH 40V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,424	MOSFET (Metal Oxide)	40V	50A (Tc)	10V	5V @ 250µA	85nC @ 10V	3700pF @ 25V	±20V	-	83.3W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
CPH3356-TL-H	ON Semiconductor	MOSFET P-CH 20V 2.5A CPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 137 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,632	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.8V, 4.5V	-	3.3nC @ 4.5V	250pF @ 10V	±10V	-	1W (Ta)	137 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
MMBF0201NLT1G	ON Semiconductor	MOSFET N-CH 20V 300MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock769,848	MOSFET (Metal Oxide)	20V	300mA (Ta)	4.5V, 10V	2.4V @ 250µA	-	45pF @ 5V	±20V	-	225mW (Ta)	1 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
PSMN1R5-30YLC,115	Nexperia USA Inc.	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4044pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,344	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	1.95V @ 1mA	65nC @ 10V	4044pF @ 15V	±20V	-	179W (Tc)	1.55 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
STFW1N105K3	STMicroelectronics	MOSFET N-CH 1050V 1.4A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock19,368	MOSFET (Metal Oxide)	1050V	1.4A (Tc)	10V	4.5V @ 50µA	13nC @ 10V	180pF @ 100V	±30V	-	20W (Tc)	11 Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
CSD17507Q5A	Texas Instruments	MOSFET N-CH 30V 65A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock944,592	MOSFET (Metal Oxide)	30V	13A (Ta), 65A (Tc)	4.5V, 10V	2.1V @ 250µA	3.6nC @ 4.5V	530pF @ 15V	±20V	-	3W (Ta)	10.8 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
STP28N65M2	STMicroelectronics	MOSFET N-CH 650V 20A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock23,514	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	4V @ 250µA	35nC @ 10V	1440pF @ 100V	±25V	-	170W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
P3203CMG-ML	MOSLEADER	Single N 30V 6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ210-0-T1B-A	Renesas Electronics Corporation	P-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6507END3TL1	Rohm Semiconductor	650V 7A TO-252, LOW-NOISE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,431	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	4V @ 200µA	20 nC @ 10 V	390 pF @ 25 V	±20V	-	78W (Tc)	665mOhm @ 2.4A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
NC1M120C12HTNG	NextGen Components	SiC MOSFET N 1200V 12mohm 214A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 214A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.5V @ 40mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8330 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 938W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	214A (Tc)	20V	3.5V @ 40mA	-	8330 pF @ 1000 V	+20V, -5V	-	938W (Ta)	20mOhm @ 100A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
NTNS5K0P021ZTCG	onsemi	MOSFET P-CH 20V 127MA 3XDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 127mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.8 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 125mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-XDFN (0.42x0.62) Package / Case: 3-XFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	127mA (Ta)	1.5V, 4.5V	1V @ 250µA	-	12.8 pF @ 15 V	±8V	-	125mW (Ta)	5Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-XDFN (0.42x0.62)	3-XFDFN
PJP60R290E_T0_00001	Panjit International Inc.	600V N-CHANNEL SUPER JUNCTION MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	1.7A (Ta), 15A (Tc)	10V	4V @ 250µA	40 nC @ 10 V	1013 pF @ 25 V	±20V	-	184W (Tc)	290mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
ISL9N327AD3ST	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Tc)	4.5V, 10V	3V @ 250µA	26 nC @ 10 V	910 pF @ 15 V	±20V	-	50W (Ta)	27mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFH90N65X3	IXYS	MOSFET 90A 650V X3 TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.2V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	90A (Tc)	10V	5.2V @ 4mA	95 nC @ 10 V	6080 pF @ 25 V	±20V	-	960W (Tc)	33mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
NVMFS5C460NWFT1G	onsemi	MOSFET N-CH 40V 19A/71A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	19A (Ta), 71A (Tc)	10V	3.5V @ 250µA	16 nC @ 10 V	1000 pF @ 25 V	±20V	-	3.6W (Ta), 50W (Tc)	5.3mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTD78N03R-35G	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN14M8UFDF-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V U-DFN2020-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1246 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	14.7A (Ta)	2.5V, 4.5V	1.2V @ 250µA	29.5 nC @ 10 V	1246 pF @ 6 V	±8V	-	1.1W (Ta)	6mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
DMTH10H010LPS-13	Diodes Incorporated	MOSFET N-CH 100V PWRDI5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 98.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W, 125W (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	10.8A (Ta), 98.4A (Tc)	4.5V, 10V	3V @ 250µA	53.7 nC @ 10 V	2592 pF @ 50 V	±20V	-	1.5W, 125W (Tc)	8.6mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN