Page 53 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFH5106TRPBF
Infineon Technologies

MOSFET N-CH 60V 21A 8-PQFN

Package: 8-PowerVDFN

Stock61,512
5LP01SP
ON Semiconductor

MOSFET P-CH 50V .07A

Package: SC-72

Stock3,488
FQD19N10TM_F080
Fairchild/ON Semiconductor

MOSFET N-CH 100V 15.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,440
IRFS750A
Fairchild/ON Semiconductor

MOSFET N-CH 400V 8.4A TO-220F

Package: TO-220-3 Full Pack

Stock6,752
FQB6N25TM
Fairchild/ON Semiconductor

MOSFET N-CH 250V 5.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,704
IRF710L
Vishay Siliconix

MOSFET N-CH 400V 2A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,040
AUIRFS8405TRL
Infineon Technologies

MOSFET N-CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,040
IRFI830G
Vishay Siliconix

MOSFET N-CH 500V 3.1A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock220,440
NDT03N40ZT1G
ON Semiconductor

MOSFET N-CH 400V 0.5A SOT223-4

Package: TO-261-4, TO-261AA

Stock4,352
MCH3376-TL-W
ON Semiconductor

MOSFET P-CH 20V 1.5A MCPH3

Package: 3-SMD, Flat Leads

Stock7,536
RE1J002YNTCL
Rohm Semiconductor

MOSFET N-CH 1.2V DRIVE EMT3FM

Package: SC-89, SOT-490

Stock5,952
AUIRF4905STRL
Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,608
IRFS7734TRL7PP
Infineon Technologies

MOSFET N-CH 75V 183A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock5,184
IRFRC20TRLPBF
Vishay Siliconix

MOSFET N-CH 600V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,744
TK28A65W,S5X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO-220SIS

Package: TO-220-3 Full Pack, Isolated Tab

Stock7,260
SIHH14N65E-T1-GE3
Vishay Siliconix

MOSFET N-CH 650V 15A PWRPAK 8X8

Package: 8-PowerTDFN

Stock28,260
RCD080N25TL
Rohm Semiconductor

MOSFET N-CH 250V 8A SOT-428

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock46,104
AOM060V75X2Q
Alpha & Omega Semiconductor Inc.

750V SILICON CARBIDE MOSFET

Package: -

Request a Quote
GPI65010DF56
GaNPower

GANFET N-CH 650V 10A DFN 5X6

Package: -

Request a Quote
NP82N055KHE-E1-AZ
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFH5106TRPBF	Infineon Technologies	MOSFET N-CH 60V 21A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 114W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock61,512	MOSFET (Metal Oxide)	60V	21A (Ta), 100A (Tc)	10V	4V @ 250µA	75nC @ 10V	3090pF @ 25V	±20V	-	3.6W (Ta), 114W (Tc)	5.6 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
5LP01SP	ON Semiconductor	MOSFET P-CH 50V .07A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 3-SPA Package / Case: SC-72	Package: SC-72	Stock3,488	MOSFET (Metal Oxide)	50V	70mA (Ta)	1.5V, 4V	-	1.4nC @ 10V	7.4pF @ 10V	±10V	-	250mW (Ta)	23 Ohm @ 40mA, 4V	150°C (TJ)	Through Hole	3-SPA	SC-72
FQD19N10TM_F080	Fairchild/ON Semiconductor	MOSFET N-CH 100V 15.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,440	MOSFET (Metal Oxide)	100V	15.6A (Tc)	10V	4V @ 250µA	25nC @ 10V	780pF @ 25V	±25V	-	2.5W (Ta), 50W (Tc)	100 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS750A	Fairchild/ON Semiconductor	MOSFET N-CH 400V 8.4A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,752	MOSFET (Metal Oxide)	400V	8.4A (Tc)	10V	4V @ 250µA	131nC @ 10V	2780pF @ 25V	±30V	-	49W (Tc)	300 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQB6N25TM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 5.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,704	MOSFET (Metal Oxide)	250V	5.5A (Tc)	10V	5V @ 250µA	8.5nC @ 10V	300pF @ 25V	±30V	-	3.13W (Ta), 63W (Tc)	1 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF710L	Vishay Siliconix	MOSFET N-CH 400V 2A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,040	MOSFET (Metal Oxide)	400V	2A (Tc)	10V	4V @ 250µA	17nC @ 10V	170pF @ 25V	±20V	-	-	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
AUIRFS8405TRL	Infineon Technologies	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,040	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	3.9V @ 100µA	161nC @ 10V	5193pF @ 25V	±20V	-	163W (Tc)	2.3 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFI830G	Vishay Siliconix	MOSFET N-CH 500V 3.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock220,440	MOSFET (Metal Oxide)	500V	3.1A (Tc)	10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	±20V	-	35W (Tc)	1.5 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
NDT03N40ZT1G	ON Semiconductor	MOSFET N-CH 400V 0.5A SOT223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,352	MOSFET (Metal Oxide)	400V	500mA (Tc)	10V	4.5V @ 50µA	6.6nC @ 10V	140pF @ 50V	±30V	-	2W (Tc)	3.4 Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
MCH3376-TL-W	ON Semiconductor	MOSFET P-CH 20V 1.5A MCPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 241 mOhm @ 750mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCPH Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock7,536	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.8V, 4.5V	1.4V @ 1mA	1.7nC @ 4.5V	120pF @ 10V	±10V	-	800mW (Ta)	241 mOhm @ 750mA, 4.5V	150°C (TJ)	Surface Mount	3-MCPH	3-SMD, Flat Leads
RE1J002YNTCL	Rohm Semiconductor	MOSFET N-CH 1.2V DRIVE EMT3FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock5,952	MOSFET (Metal Oxide)	50V	200mA (Ta)	0.9V, 4.5V	800mV @ 1mA	-	26pF @ 10V	±8V	-	150mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
AUIRF4905STRL	Infineon Technologies	MOSFET P-CH 55V 42A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,608	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 250µA	180nC @ 10V	3500pF @ 25V	±20V	-	200W (Tc)	20 mOhm @ 42A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7734TRL7PP	Infineon Technologies	MOSFET N-CH 75V 183A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 197A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock5,184	MOSFET (Metal Oxide)	75V	197A (Tc)	6V, 10V	3.7V @ 150µA	270nC @ 10V	10130pF @ 25V	±20V	-	294W (Tc)	3.05 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
IRFRC20TRLPBF	Vishay Siliconix	MOSFET N-CH 600V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,744	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	4.4 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
TK28A65W,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 27.6A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock7,260	MOSFET (Metal Oxide)	650V	27.6A (Ta)	10V	3.5V @ 1.6mA	75nC @ 10V	3000pF @ 300V	±30V	-	45W (Tc)	110 mOhm @ 13.8A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
SIHH14N65E-T1-GE3	Vishay Siliconix	MOSFET N-CH 650V 15A PWRPAK 8X8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 8 x 8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock28,260	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	4V @ 250µA	96nC @ 10V	1712pF @ 100V	±30V	-	156W (Tc)	260 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 8 x 8	8-PowerTDFN
RCD080N25TL	Rohm Semiconductor	MOSFET N-CH 250V 8A SOT-428 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock46,104	MOSFET (Metal Oxide)	250V	8A (Ta)	10V	5V @ 1mA	25nC @ 10V	1440pF @ 25V	±30V	-	850mW (Ta), 20W (Tc)	300 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
AOM060V75X2Q	Alpha & Omega Semiconductor Inc.	750V SILICON CARBIDE MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V Vgs (Max): +15V, -5V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	SiCFET (Silicon Carbide)	750 V	29A (Tc)	15V	3.5V @ 6mA	39.4 nC @ 15 V	1165 pF @ 400 V	+15V, -5V	-	103W (Tc)	80mOhm @ 6A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
GPI65010DF56	GaNPower	GANFET N-CH 650V 10A DFN 5X6 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 10A Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 1.4V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 400 V Vgs (Max): +7.5V, -12V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	GaNFET (Gallium Nitride)	650 V	10A	6V	1.4V @ 3.5mA	2.6 nC @ 6 V	90 pF @ 400 V	+7.5V, -12V	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
NP82N055KHE-E1-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTQ50N28T	IXYS	MOSFET N-CH TO3P FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDB8860-F085	onsemi	MOSFET N-CH 30V 80A TO263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12585 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	3V @ 250µA	214 nC @ 10 V	12585 pF @ 15 V	±20V	-	254W (Tc)	2.3mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFP245	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	14A (Tc)	10V	4V @ 250µA	59 nC @ 10 V	1300 pF @ 25 V	±20V	-	150W (Tc)	340mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
SPW17N80C3FKSA1	Infineon Technologies	MOSFET N-CH 800V 17A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Stock1,356	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	3.9V @ 1mA	177 nC @ 10 V	2320 pF @ 25 V	±20V	-	227W (Tc)	290mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IXFP28N60X3	IXYS	DISCRETE MOSFET 28A 600V X3 TO22 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK0701DPP-E0-T2	Renesas Electronics Corporation	MOSFET N-CH 75V 100A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	75 V	100A (Ta)	-	-	140 nC @ 10 V	10000 pF @ 10 V	-	-	30W (Tc)	3.8mOhm @ 50A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SIL3415CHE3-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5A (Ta)	4.5V	1.25V @ 250µA	13 nC @ 10 V	540 pF @ 10 V	±10V	-	1W (Tj)	45mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
IPB80N07S405ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	80A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-