Page 55 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS670S2LL6327HTSA1
Infineon Technologies

MOSFET N-CH 55V 540MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,264
IRF7240TR
Infineon Technologies

MOSFET P-CH 40V 10.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,168
PH1225AL,115
Nexperia USA Inc.

MOSFET N-CH 25V 100A LFPAK

Package: SOT-1023, 4-LFPAK

Stock3,328
FQD5N50TF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock40,128
NDS9430A
Fairchild/ON Semiconductor

MOSFET P-CH 20V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock190,764
SPA06N60C3
Infineon Technologies

MOSFET N-CH 650V 6.2A TO-220

Package: TO-220-3 Full Pack

Stock507,492
IPC90N04S5L3R3ATMA1
Infineon Technologies

MOSFET N-CH 20V 40V 8TDSON

Package: 8-PowerTDFN

Stock3,408
IPU60R1K5CEAKMA1
Infineon Technologies

MOSFET N-CH 600V TO-251-3

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,536
NVMFS5C604NLAFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,752
AOB282L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 18.5A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,608
SI7104DN-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock4,480
TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 40A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,152
SIHP065N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 40A TO220AB

Package: TO-220-3

Stock6,224
FCA16N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-3PN

Package: TO-3P-3, SC-65-3

Stock3,920
2N7002BKW,115
Nexperia USA Inc.

MOSFET N-CH 60V 310MA SOT323

Package: SC-70, SOT-323

Stock4,112
SI4850EY-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock14,820
CSD18534Q5A
Texas Instruments

MOSFET N-CH 60V 8SON

Package: 8-PowerTDFN

Stock64,728
STF42N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 34A EP TO220FP

Package: TO-220-3 Full Pack

Stock18,570
NVMFS5C612NWFT1G
onsemi

MOSFET N-CH 60V 34A/225A 5DFN

Package: -

Request a Quote
FDP047N08-F10
Fairchild Semiconductor

164A, 75V, N-CHANNEL, MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS670S2LL6327HTSA1	Infineon Technologies	MOSFET N-CH 55V 540MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2.7µA Gate Charge (Qg) (Max) @ Vgs: 2.26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 650 mOhm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,264	MOSFET (Metal Oxide)	55V	540mA (Ta)	4.5V, 10V	2V @ 2.7µA	2.26nC @ 10V	75pF @ 25V	±20V	-	360mW (Ta)	650 mOhm @ 270mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRF7240TR	Infineon Technologies	MOSFET P-CH 40V 10.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,168	MOSFET (Metal Oxide)	40V	10.5A (Ta)	4.5V, 10V	3V @ 250µA	110nC @ 10V	9250pF @ 25V	±20V	-	2.5W (Ta)	15 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PH1225AL,115	Nexperia USA Inc.	MOSFET N-CH 25V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6380pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	Package: SOT-1023, 4-LFPAK	Stock3,328	MOSFET (Metal Oxide)	25V	100A (Tc)	-	2.15V @ 1mA	105nC @ 10V	6380pF @ 12V	-	-	-	1.2 mOhm @ 15A, 10V	-	Surface Mount	LFPAK56, Power-SO8	SOT-1023, 4-LFPAK
FQD5N50TF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 3.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock40,128	MOSFET (Metal Oxide)	500V	3.5A (Tc)	10V	5V @ 250µA	17nC @ 10V	610pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	1.8 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NDS9430A	Fairchild/ON Semiconductor	MOSFET P-CH 20V 5.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock190,764	MOSFET (Metal Oxide)	20V	5.3A (Ta)	4.5V, 10V	3V @ 250µA	50nC @ 10V	950pF @ 15V	±20V	-	2.5W (Ta)	50 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SPA06N60C3	Infineon Technologies	MOSFET N-CH 650V 6.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock507,492	MOSFET (Metal Oxide)	650V	6.2A (Tc)	10V	3.9V @ 260µA	31nC @ 10V	620pF @ 25V	±20V	-	32W (Tc)	750 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPC90N04S5L3R3ATMA1	Infineon Technologies	MOSFET N-CH 20V 40V 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 23µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,408	MOSFET (Metal Oxide)	40V	90A (Tc)	4.5V, 10V	2V @ 23µA	40nC @ 10V	2145pF @ 25V	±16V	-	62W (Tc)	3.3 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
IPU60R1K5CEAKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,536	MOSFET (Metal Oxide)	600V	3.1A (Tc)	-	3.5V @ 90µA	9.4nC @ 10V	200pF @ 100V	-	-	-	1.5 Ohm @ 1.1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
NVMFS5C604NLAFT3G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 287A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,752	MOSFET (Metal Oxide)	60V	287A (Tc)	4.5V, 10V	2V @ 250µA	52nC @ 4.5V	8900pF @ 25V	±20V	-	200W (Tc)	1.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AOB282L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 80V 18.5A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7765pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,608	MOSFET (Metal Oxide)	80V	18.5A (Ta), 105A (Tc)	6V, 10V	3.5V @ 250µA	178nC @ 10V	7765pF @ 40V	±20V	-	2.1W (Ta), 272.5W (Tc)	3.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7104DN-T1-E3	Vishay Siliconix	MOSFET N-CH 12V 35A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock4,480	MOSFET (Metal Oxide)	12V	35A (Tc)	2.5V, 4.5V	1.8V @ 250µA	70nC @ 10V	2800pF @ 6V	±12V	-	3.8W (Ta), 52W (Tc)	3.7 mOhm @ 26.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
TJ40S04M3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 40A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4140pF @ 10V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,152	MOSFET (Metal Oxide)	40V	40A (Ta)	6V, 10V	3V @ 1mA	83nC @ 10V	4140pF @ 10V	+10V, -20V	-	68W (Tc)	9.1 mOhm @ 20A, 10V	175°C (TJ)	Surface Mount	DPAK+	TO-252-3, DPak (2 Leads + Tab), SC-63
SIHP065N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 40A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,224	MOSFET (Metal Oxide)	600V	40A (Tc)	10V	5V @ 250µA	98nC @ 10V	2700pF @ 100V	±30V	-	250W (Tc)	65 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FCA16N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 134.4W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,920	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 250µA	52.3nC @ 10V	2170pF @ 100V	±30V	-	134.4W (Tc)	199 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2N7002BKW,115	Nexperia USA Inc.	MOSFET N-CH 60V 310MA SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 275mW (Ta) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock4,112	MOSFET (Metal Oxide)	60V	310mA (Ta)	10V	2.1V @ 250µA	0.6nC @ 4.5V	50pF @ 10V	±20V	-	275mW (Ta)	1.6 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
SI4850EY-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock14,820	MOSFET (Metal Oxide)	60V	6A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 10V	-	±20V	-	1.7W (Ta)	22 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
CSD18534Q5A	Texas Instruments	MOSFET N-CH 60V 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock64,728	MOSFET (Metal Oxide)	60V	13A (Ta), 50A (Tc)	4.5V, 10V	2.3V @ 250µA	22nC @ 10V	1770pF @ 30V	±20V	-	3.1W (Ta), 77W (Tc)	9.8 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (5x6)	8-PowerTDFN
STF42N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 34A EP TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 87 mOhm @ 17A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,570	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	4V @ 250µA	55nC @ 10V	2370pF @ 100V	±25V	-	40W (Tc)	87 mOhm @ 17A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
NVMFS5C612NWFT1G	onsemi	MOSFET N-CH 60V 34A/225A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	34A (Ta), 225A (Tc)	10V	4V @ 250µA	62 nC @ 10 V	4900 pF @ 25 V	±20V	-	3.8W (Ta), 167W (Tc)	1.65mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
FDP047N08-F10	Fairchild Semiconductor	164A, 75V, N-CHANNEL, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOTF292L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 70A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	70A (Tc)	6V, 10V	3.4V @ 250µA	126 nC @ 10 V	6775 pF @ 50 V	±20V	-	47W (Tc)	4.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
MCH3409-TL-E	onsemi	NCH 2.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB0401NM5SATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,970	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDD4141-F085P	onsemi	MOSFET P-CH 40V 10.8A/50A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	10.8A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	50 nC @ 10 V	2775 pF @ 20 V	±20V	-	2.4W (Ta), 69W (Tc)	12.3mOhm @ 12.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
HUF76129D3ST	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Tc)	4.5V, 10V	3V @ 250µA	46 nC @ 10 V	1425 pF @ 25 V	±20V	-	105W (Tc)	16mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
STD15N60DM6	STMicroelectronics	MOSFET N-CH 600V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 338mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,500	MOSFET (Metal Oxide)	600 V	12A (Tc)	-	4.75V @ 250µA	15.3 nC @ 10 V	607 pF @ 100 V	±25V	-	110W (Tc)	338mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
ISZ022N06LM6ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AO3493	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 3A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: 3-SMD, SOT-23-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3A (Ta)	1.8V, 4.5V	1V @ 250µA	20 nC @ 4.5 V	500 pF @ 10 V	±8V	-	1.4W (Ta)	80mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant