Cree/Wolfspeed Products

MOSFET N-CH SICFET 1200V 28A DIE

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V
• Vgs (Max): +25V, -5V
• FET Feature: -
• Power Dissipation (Max): 202W (Tj)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

MOSFET N-CH SIC 1KV 35A D2PAK-7

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Vgs (Max): +15V, -4V
• FET Feature: -
• Power Dissipation (Max): 113.5W (Tc)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

MOSFET N-CH 1200V 90A TO-247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.4V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 161nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 463W (Tc)
• Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

FET RF 84V 5.8GHZ 440166

• Transistor Type: HEMT
• Frequency: 5.5GHz ~ 5.8GHz
• Gain: 11dB
• Voltage - Test: 28V
• Current Rating: 1.5A
• Noise Figure: -
• Current - Test: 115mA
• Power - Output: 15W
• Voltage - Rated: 84V
• Package / Case: 440196
• Supplier Device Package: 440196

RF MOSFET HEMT 50V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 17dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 125mA
• Power - Output: 75W
• Voltage - Rated: 150V
• Package / Case: Die
• Supplier Device Package: Die

FET RF 125V 3.5GHZ 440193

• Transistor Type: HEMT
• Frequency: 2.9GHz ~ 3.5GHz
• Gain: 13.3dB
• Voltage - Test: 50V
• Current Rating: 12A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 170W
• Voltage - Rated: 125V
• Package / Case: 440193
• Supplier Device Package: 440193

FET RF 84V 5.65GHZ 440166

• Transistor Type: HEMT
• Frequency: 5.65GHz
• Gain: 12dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 200mA
• Power - Output: 12.5W
• Voltage - Rated: 84V
• Package / Case: 440166
• Supplier Device Package: 440166

FET RF 125V 4GHZ 440206

• Transistor Type: HEMT
• Frequency: 0 ~ 4GHz
• Gain: 11dB
• Voltage - Test: 50V
• Current Rating: 8.7A
• Noise Figure: -
• Current - Test: 600mA
• Power - Output: 116W
• Voltage - Rated: 125V
• Package / Case: 440206
• Supplier Device Package: 440206

FET RF 125V 6GHZ 440166

• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 16dB
• Voltage - Test: 50V
• Current Rating: 4.2A
• Noise Figure: -
• Current - Test: 150mA
• Power - Output: 30W
• Voltage - Rated: 125V
• Package / Case: 440166
• Supplier Device Package: 440166

RF MOSFET HEMT 28V DIE

• Transistor Type: HEMT
• Frequency: 8GHz
• Gain: 16.5dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 200mA
• Power - Output: 30W
• Voltage - Rated: 84V
• Package / Case: Die
• Supplier Device Package: Die

MOSFET 2N-CH 1200V 193A MODULE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 193A
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V
• Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V
• Power - Max: 925W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

DIODE SCHOTTKY 600V 3.5A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 120pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 4A TO252

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 251pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 3A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 650V
• Capacitance @ Vr, F: 155pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.2KV 10A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Capacitance @ Vr, F: 754pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.2KV 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 13A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 13A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 650V
• Capacitance @ Vr, F: 295pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Isolated Tab
• Supplier Device Package: TO-220-2 Isolated Tab
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE ARRAY SCHOTTKY 600V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 16.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

DEV KIT

• Type: -
• Frequency: -
• For Use With/Related Products: -
• Supplied Contents: -

EVAL BOARD FOR CRF24060

• Type: MESFET
• Frequency: 0Hz ~ 2.4GHz
• For Use With/Related Products: CRF24060
• Supplied Contents: Partially Populated Board - Main IC Not Included

EVAL BOARD FOR CRF24010

• Type: MESFET
• Frequency: 0Hz ~ 2.7GHz
• For Use With/Related Products: CRF24010
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD TEST FIXTURE FOR CGHV96050

• Type: Transistor
• Frequency: 7.9GHz ~ 9.6GHz
• For Use With/Related Products: CGHV96050F1
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CIRCUIT CGH55015F

• Type: Amplifier
• Frequency: 5.5GHz ~ 5.8GHz
• For Use With/Related Products: CGH55015F
• Supplied Contents: Partially Populated Board - Main IC Not Included

EVAL BOARD FOR CGHV22100

• Type: HEMT
• Frequency: 1.8GHz ~ 2.2GHz
• For Use With/Related Products: CGHV22100
• Supplied Contents: Partially Populated Board - Main IC Not Included

FET RF HEMT 28V 100MA 440203

• Type: Amplifier
• Frequency: 0Hz ~ 6GHz
• For Use With/Related Products: CGH40006S
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST FIXTURE FOR CGHV14500

• Type: FET
• Frequency: 1.2GHz ~ 1.4GHz
• For Use With/Related Products: CGHV14500
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CKT CMPA0060025F

• Type: Amplifier
• Frequency: 20MHz ~ 6GHz
• For Use With/Related Products: CMPA0060025F
• Supplied Contents: Partially Populated Board - Main IC Not Included

IC AMP GAN HEMT MMIC 780019

• Frequency: 20MHz ~ 6GHz
• P1dB: -
• Gain: 17dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: 10 V ~ 50 V
• Current - Supply: 20mA ~ 12A
• Test Frequency: 20MHz ~ 6GHz
• Package / Case: 780019
• Supplier Device Package: 780019